2SC5447

Silicon NPN Triple Diffused

Character Display Horizntal Deflection Output

ADE-208-576 B (Z)
3rd. Edition
September 1997

Features
• High breakdown voltage
VCES = 1500 V
• High speed switching
tf = 0.15 µsec (typ.) at fH = 64 kHz
• Isolated package
TO–3PFM

Outline

TO–3PFM

C
2

1
B

3
1. Base
E 1 2. Collector
2 3. Emitter
3

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2SC5447

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Collector to emitter voltage VCES 1500 V
Emitter to base voltage VEBO 6 V
Collector current IC 8 A
Collector peak current ic(peak) 16 A
Note1
Collector power dissipation PC 50 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Collector to emitter diode forward current ID 8 A
Note: 1. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions
Emitter to base breakdown V(BR)EBO 6 — — V IE = 400mA, IC = 0
voltage
Collector cutoff current ICES — — 500 µA VCE = 1500V, RBE = 0
DC current transfer ratio hFE1 5 — 25 VCE = 5 V, IC = 1A
DC current transfer ratio hFE2 4 — 6 VCE = 5 V, IC = 5A
Collector to emitter saturation VCE(sat) — — 5 V IC = 5A, IB = 1.25A
voltage
Base to emitter saturation VBE(sat) — — 1.5 V IC = 5A, IB = 1.25A
voltage
Collector to emitter diode VECF — — 2 V IF = 8A
forward voltage
Fall time tf — 0.2 0.4 µs ICP = 4A, IB1 = 1.2A
fH = 31.5kHz
Fall time tf — 0.15 — µs ICP = 4A, IB1 = 1A
fH = 64kHz

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 2SC5447

Main Characteristics

Collector Power Dissipation

vs. Temperature Area of Safe Operaion
80 50
Collector Power Dissipation Pc (W)

20

Collector Current I C(A)

60 10
5

40 2
1

20 0.5 L = 180 µH
I B2 = –1 A
0.2 duty < 1 %
Tc = 25°C
0.1
0 50 100 150 200 10 100 1000 5000
Case Temperature Tc (°C) Collector to Emitter Voltage V CE(V)

DC Current Transfer Ratio vs.

Typical Output Characteristics Collector Current
5 100
A 0.9 A
1.0 VCE = 5 V
0.8 A
FE

0.7 A 50
4 0.6 A 75 °C
I C(A)

0.5 A
DC Current Transfer Ratio

0.4 A 20
3
0.3 A
Collector Current

10
0.2 A 25 °C
2
5
0.1 A Tc = –25 °C
1
2
Tc = 25 °C IB= 0
1
0 5 10 0.1 0.2 0.5 1 2 5 10
Collector to Emitter Voltage V CE(V) Collector Current I C(A)

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2SC5447

Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage

vs. Collector Current vs. Collector Current
10 10
Collector to Emitter Saturation Voltage
V CE(sat) (V)

Base to Emitter Saturation Voltage

V BE(sat) (V)
IC / I B= 4
5 I C/ I B= 4
5
75 °C
2
25 °C 2
1 Tc = –25°C
Tc = –25 °C 1
0.5
0.5 75 °C
25 °C
0.2

0.1 0.2

0.05
0.1 0.2 0.5 1 2 5 10 0.1 0.2 0.5 1 2 5 10
Collector Current I C (A) Collector Current I C (A)

Collector to Emitter Saturation Voltage

vs. Base Current Fall Time vs. Base Current
10 0.8
Collector to Emitter Saturation Voltage
V CE(sat) (V)

I CP = 4 A
f H = 64 kHz
I C= 3 A 0.6 Tc = 25°C
Fall Time t f (µs)

4A
5A
5 0.4

0.2

Tc = 25°C
0
0 0.4 0.8 1.2 1.6 2.0
0.1 0.2 0.5 1 2 5 10
Base Current I B (A) Base Current I B1 (A)

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 2SC5447

Storage Time vs. Base Current

8
I CP = 4 A
f H = 64 kHz

Storage Time tstg (µs)

6 Tc = 25°C

0
0.4 0.8 1.2 1.6 2.0
Base Current I B1 (A)

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2SC5447

Package Dimensions
Unit: mm

5.0 ± 0.3
16.0 Max f 3.2
5.8 Max

19.9 ± 0.3
2.7

5.0

4.0
3.2
21.0 ± 0.5

1.6
2.6
1.4 Max
1.4 Max

+0.2
0.9 –0.1
+0.2
0.66 –0.1

5.45 ± 0.5 5.45 ± 0.5

Hitachi Code TO–3PFM
EIAJ —
JEDEC —

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 2SC5447

When using this document, keep the following in mind:

1. This document may, wholly or partially, be subject to change without notice.

2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.

Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109

For further information write to:

Hitachi America, Ltd. Hitachi Europe GmbH Hitachi Europe Ltd. Hitachi Asia Pte. Ltd.
Semiconductor & IC Div. Electronic Components Group Electronic Components Div. 16 Collyer Quay #20-00
2000 Sierra Point Parkway Continental Europe Northern Europe Headquarters Hitachi Tower
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Copyright © Hitachi, Ltd., 1997. All rights reserved. Printed in Japan.

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