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    2SC3597

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    lkershsdf
    This document is a datasheet for the 2SA1403/2SC3597 epitaxial planar silicon transistors. It summarizes that these transistors are intended for use in applications such as ultra-high definition CRT displays and video output. It lists the key features and specifications of the transistors, including their high frequency characteristics, complementary pairing, and maximum ratings.

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    2SC3597

    Uploaded by

    lkershsdf
    78 views5 pages
    This document is a datasheet for the 2SA1403/2SC3597 epitaxial planar silicon transistors. It summarizes that these transistors are intended for use in applications such as ultra-high definition CRT displays and video output. It lists the key features and specifications of the transistors, including their high frequency characteristics, complementary pairing, and maximum ratings.

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    This document is a datasheet for the 2SA1403/2SC3597 epitaxial planar silicon transistors. It summarizes that these transistors are intended for use in applications such as ultra-high definition CRT displays and video output. It lists the key features and specifications of the transistors, including their high frequency characteristics, complementary pairing, and maximum ratings.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    78 views5 pages

    2SC3597

    Uploaded by

    lkershsdf
    This document is a datasheet for the 2SA1403/2SC3597 epitaxial planar silicon transistors. It summarizes that these transistors are intended for use in applications such as ultra-high definition CRT displays and video output. It lists the key features and specifications of the transistors, including their high frequency characteristics, complementary pairing, and maximum ratings.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    of 5

    Ordering number:EN1762B

    PNP/NPN Epitaxial Planar Silicon Transistors

    2SA1403/2SC3597
    Ultrahigh-Difinition CRT Display
    Video Output Applications

    Applications Package Dimensions


    · Ultrahig-definition CRT display. unit:mm
    · Video output. 2009B
    · Color TV chroma output.
    [2SA1403/2SC3597]
    · Wide-band amp.

    Features
    · High fT : fT typ=800MHz.
    · Small reverse transfer capacitance and excellent
    high-frequency characteristic
    : Cre=2.9pF (NPN), 4.6pF (PNP).
    · Complementary pair with the 2SA1403/2SC3597.
    · Adoption of FBET procss. 1 : Emitter
    2 : Collector
    3 : Base
    ( ) : 2SA1403
    Specifications JEDEC : TO-126

    Absolute Maximum Ratings at Ta = 25˚C


    Parameter Symbol Conditions Ratings Unit
    Collector-to-Base Voltage VCBO (–)80 V
    Collector-to-Emitter Voltage VCEO (–)60 V
    Emitter-to-Base Voltage VEBO (–)4 V
    Collector Current IC (–)500 mA
    Collector Current (Pulse) ICP (–)1 A
    Collector Dissipation PC 1.2 W
    Tc=25˚C 10 W
    Junction Temperature Tj 150 ˚C
    Storage Temperature Tstg –55 to +150 ˚C

    Electrical Characteristics at Ta = 25˚C


    Ratings
    Parameter Symbol Conditions Unit
    min typ max
    Collector Cutoff Current ICBO VCB=(–)60V, IE=0 (–)0.1 µA
    Emitter Cutoff Current IEBO VEB=(–)2V, IC=0 (–)0.1 µA
    DC Current Gain hFE1 VCE=(–)10V, IC=(–)50mA 40* 320*
    hFE2 VCE=(–)10V, IC=(–)400mA 20
    Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)100mA 800 MHz
    Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)100mA, IB=(–)10mA 0.6 V
    (–0.8) V
    Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)100mA, IB=(–)10mA (–)1.0 V
    Collector-to-Base Breakdown Voltage V(BR)CBO IC=(–)10µA, IE=0 (–)80 V
    Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(–)1mA, RBE=∞ (–)60 V
    Emitter-to-Base Breakdown Votage V(BR)EBO IE=(–)100µA, IC=0 (–)4 V
    Output Capacitance Cob VCB=(–)30V, f=1MHz 3.4 pF
    (5.2) pF
    Reverse Transfer Capacitance Cre VCB=(–)30V, f=1MHz 2.9 pF
    (4.6) pF
    * : The 2SA1403/2SC3597 are classified by 50mA hFE as follows :
    40 C 80 60 D 120 100 E 200 160 F 320

    SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters


    TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
    71598HA (KT)/12696TS (KOTO) X-7235/3237KI/2225MW, TS No.1762-1/4
    2SA1403/2SC3597

    No.1762-2/4
    2SA1403/2SC3597

    No.1762-3/4
    2SA1403/2SC3597

    No products described or contained herein are intended for use in surgical implants, life-support systems,
    aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
    the like, the failure of which may directly or indirectly cause injury, death or property loss.
    Anyone purchasing any products described or contained herein for an above-mentioned use shall:
    Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
    subsidiaries and distributors and all their officers and employees, jointly and severally, against any
    and all claims and litigation and all damages, cost and expenses associated with such use:
    Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
    litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
    their officers and employees jointly or severally.
    Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
    eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
    are made or implied regarding its use or any infringements of intellectual property rights or other rights of
    third parties.

    This catalog provides information as of July, 1998. Specifications and information herein are subject to
    change without notice.
    PS No.1762-4/4
    This datasheet has been download from:

    www.datasheetcatalog.com

    Datasheets for electronics components.

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