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2SC5068A
Silicon NPN Triple Diffused Planar

July 1993
Preliminary

Application
Character display horizontal deflection output

Features
• High breakdown voltage
VCBO = 1500 V, IC = 12 A
• High speed switching
tf = 0.2 µsec(typ)

TO–3PFM (N)

1. Base
2. Collector
1 3. Emitter
2
3
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2SC5068A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 1500 V
Collector to emitter voltage VCEO 800 V
Emitter to base voltage VEBO 6 V
Collector current IC 12 A
Collector surge current ic(surge) 20 A
Collector power dissipation PC*1 50 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to emitter V(BR)CEO 800 — — V IC = 10 mA, RBE = ∞
breakdown voltage
Emitter to base V(BR)EBO 6 — — V IE = 10 mA, IC = 0
breakdown voltage
Collector cutoff current ICES — — 500 µA VCE = 1500 V, RBE = 0
DC current transfer ratio hFE — — 38 VCE = 5 V, IC = 1 A
Collector to emitter VCE(sat) — — 5 V IC = 7 A, IB = 1.7 A
saturation voltage
Base to emitter VBE(sat) — — 1.5 V IC = 7 A, IB = 1.7 A
saturation voltage
Fall time tf — 0.2 0.4 µse ICP = 7 A, IB1 = 1.7 A,
c fH=31.5kHz
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2SC5068A

Maximum Collector Dissipation Curve

80

Pc (W)
60

Collector Power Dissipation

40

20

0 50 100 150 200

Case Temperature Tc (°C)

Area of Safe Operation

20
(100 V, 20 A) f = 15.75 kHz
Ta = 25 °C
I C (A)

16
For picture tube arcing

12
Collector Current

4 (800 V, 4 A)

0.5 mA

0 400 800 1200 1600 2000

Collector to Emitter Voltage V CE (V)
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2SC5068A

Typical Output Charactristics

10
A
2.0 1.8 AA
1.6 A
1.4

I C (A)
1.2 A

Pc
=
1.0 A

50
0.8 A

W
Collector Current
0.6 A
5
0.4 A

0.2 A

IB=0
Tc = 25 °C

0 5 10
Collector to Emitter Voltage V CE (V)

DC Current Transfer Ratio vs.

Collector Current
100
VCE = 5 V
h FE

50
75 °C
DC Current Transfer Ratio

20 25 °C
Tc = –25 °C
10

1
0.1 0.2 0.5 1 2 5 10
Collector Current I C (A)
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2SC5068A

Collector to Emitter Saturation Voltage

vs. Collector Current
10

Collector to Emitter Saturation Voltage

V CE(sat) (V)
IC / I B= 4
5

1
Tc = –25 °C
0.5
25 °C
75 °C
0.2

0.1

0.05
0.1 0.2 0.5 1 2 5 10
Collector Current I C (A)

Base to Emitter Saturation Voltage

vs. Collector Current
10
Base to Emitter Saturetion Voltage
V BE(sat) (V)

I C/ I B= 4
5

2
Tc = –25°C
1

0.5 25 °C
75 °C

0.2

0.1 0.2 0.5 1 2 5 10

Collector Current I C (A)
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2SC5068A

Collector to Base Saturation Voltage

vs. Base Current
10

Collector to Emitter Saturation Voltage

V CE(sat) (V)
Tc = 25 °C

I C= 4 A 6A 8A

0
0.1 0.2 0.5 1 2 5 10
Base Current I B (A)
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2SC5068A
Package Dimensions Unit : mm

• HDPAK

5.0 ± 0.3
16.0 Max φ 3.2
5.8 Max

19.9 ± 0.3
2.7

5.0

4.0
3.2
21.0 ± 0.5

1.6
2.6
1.4 Max
1.4 Max

0.6 ± 0.2
1.0 ± 0.2

5.45 ± 0.5 5.45 ± 0.5

Hitachi Code TO–3PFM
EIAJ —
JEDEC —