2SD1133, 2SD1134

Silicon NPN Triple Diffused

ADE-208-905 (Z)
1st. Edition
September 2000

Application

Low frequency power amplifier complementary pair with 2SB857 and 2SB858

Outline

TO-220AB

1. Base
2. Collector
(Flange)
1
2 3 3. Emitter

Absolute Maximum Ratings (Ta = 25°C)

Ratings
Item Symbol 2SD1133 2SD1134 Unit
Collector to base voltage VCBO 70 70 V
Collector to emitter voltage VCEO 50 60 V
Emitter to base voltage VEBO 5 5 V
Collector current IC 4 4 A
Collector peak current I C(peak) 8 8 A
1
Collector power dissipation PC * 40 40 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –45 to +150 –45 to +150 °C
Note: 1. Value at TC = 25°C.

Free Datasheet http://www.datasheet4u.com/

2SD1133, 2SD1134
Electrical Characteristics (Ta = 25°C)
2SD1133 2SD1134
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO 70 — — 70 — — V I C = 10 µA, IE = 0
breakdown voltage
Collector to emitter V(BR)CEO 50 — — 60 — — V I C = 50 mA, RBE = ∞
breakdown voltage
Emitter to base V(BR)EBO 5 — — 5 — — V I E = 10 µA, IC = 0
breakdown voltage
Collector cutoff current I CBO — — 1 — — 1 µA VCB = 50 V, IE = 0
1
DC current transfer ratio hFE1* 60 — 320 60 — 320 VCE = 4V I C = 1 A*2
hFE2 35 — — 35 — — I C = 0.1 A*2
Collector to emitter VCE(sat) — — 1 — — 1 V I C = 2 A, IB = 0.2 A*2
saturation voltage
Base to emitter voltage VBE — — 1 — — 1 V VCE = 4 V, IC = 1 A*2
Gain bandwidth product fT — 7 — — 7 — MHz VCE = 4 V, IC = 0.5 A*2
Notes: 1. The 2SD1133 and 2SD1134 are grouped by h FE1 as follows.
2. Pulse test.

B C D
60 to 120 100 to 200 160 to 320

Maximum Collector Dissipation

Curve Area of Safe Operation
60 5
(10 V, 4 A)
Collector power dissipation PC (W)

D
ICmax(Continuous) C
O
p
2 (20 V, 2 A) era
Collector current IC (A)

tio
40 n
1.0
(TC = 25°C)
0.5

20 (50 V, 0.24 A)
0.2
(60 V, 0.15 A)
0.1
2SD1134
2SD1133
0.05
0 50 100 150 1 2 5 10 20 50 100
Case temperature TC (°C) Collector to emitter voltage VCE (V)

Free Datasheet http://www.datasheet4u.com/

2
 2SD1133, 2SD1134

Typical Output Characteristics Typical Transfer Characteristics

5 5
TC = 25°C

90 2 VCE = 4 V
4
Collector current IC (A)

Collector current IC (A)

80
70 1.0
60

TC = 75°C
25°C
0.5

–25°C
3 50
40
0.2
30
2
20 0.1

10 mA 0.05
1
0.02
IB = 0
0.01
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

DC Current Transfer Ratio Collector to Emitter Saturation Voltage

vs. Collector Current vs. Collector Current
Collector to emitter saturation voltage VCE(sat) (V)

1,000 1.4
VCE = 4 V
1.2
DC current transfer ratio hFE

500
IC = 10 IB
200 1.0
TC = 75°C
100 25 0.8
–25
50 0.6
TC = 75°C
20 0.4 25
–25
10 0.2

5 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 5 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 5
Collector current IC (A) Collector current IC (A)

Free Datasheet http://www.datasheet4u.com/