2SC535

Silicon NPN Epitaxial Planar

REJ03G0683-0200
(Previous ADE-208-1047)
Rev.2.00
Aug.10.2005

Application
VHF amplifier, mixer, local oscillator

Outline

RENESAS Package code: PRSS0003DA-C

(Package name: TO-92 (2))

1. Emitter
2. Collector
3. Base

3
2
1

Absolute Maximum Ratings

(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 4 V
Collector current IC 20 mA
Collector power dissipation PC 100 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

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2SC535

Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown voltage V(BR)CBO 30 — — V IC = 10 µA, IE = 0
Collector to emitter breakdown voltage V(BR)CEO 20 — — V IC = 1 mA, RBE = ∞
Emitter to base breakdown voltage V(BR)EBO 4 — — V IE = 10 µA, IC = 0
Collector cutoff current ICBO — — 0.5 µA VCB = 10 V, IE = 0
DC current transfer ratio hFE*1 60 — 200 VCE = 6 V, IC = 1 mA
Base to emitter voltage VBE — 0.72 — V VCE = 6 V, IC = 1 mA
Collector to emitter saturation voltage VCE(sat) — 0.17 — V IC = 20 mA, IB =4 mA
Gain bandwidth product fT 450 940 — MHz VCE = 6 V, IC = 5 mA
Collector output capacitance Cob — 0.9 1.2 pF VCB = 10 V, IE = 0, f = 1 MHz
Power gain PG 17 20 — dB VCE = 6 V, IC = 1 mA,
f = 100 MHz
Noise figure NF — 3.5 5.5 dB VCE = 6 V, IC = 1 mA,
f = 100 MHz, Rg = 50 Ω
Input admittance (typ) yie 1.3 + j5.3 mS VCE = 6 V, IC = 1 mA,
f = 100 MHz
Reverse transfer admittance (typ) yre –0.078 – j0.41 mS
Forward transfer admittance (typ) yfe 32 – j10 mS
Output admittance (typ) yoe 0.08 + j0.82 mS
Note: 1. The 2SC535 is grouped by hFE as follows.
B C
60 to 120 100 to 200

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2SC535

Main Characteristics

Maximum Collector Dissipation Curve Typical Output Characteristics

Collector power dissipation PC (mW)

150 20
300
275

Collector Current IC (mA)

250
16 225
200
175
100 150
12 125
100
P
75 C =1
8 00
mW
50
50
4
25 µA
IB = 0
0 50 100 150 0 4 8 12 16 20

Ambient Tmperature Ta (°C) Collector to Emitter Voltage VCE (V)

DC Current Transfer Ratio vs.

Typical Output Characteristics Collector Current

5 120
50 VCE = 6 V
DC Current Transfer ratio hFE
Collector Current IC (mA)

100
4 40

80
3 30
60
2 20
40

1 10µA
20

IB = 0
0
0 4 8 12 16 20 0.1 0.2 0.5 1.0 2 5 10 20

Collector to Emitter Voltage VCE (V) Collector Current IC (mA)

Typical Transfer Cahracteristics (1) Typical Transfer Cahracteristics (2)

20 5

VCE = 6 V VCE = 6 V
Collector Current IC (mA)

Collector Current IC (mA)

16 4

12 3

8 2

4 1

0 0
0.6 0.7 0.8 0.6 0.7 0.8

Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V)

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2SC535

Collector Output Capacitance vs. Gain Bandwidth Product vs.

Collector to Base Voltage Collector Current
Collector Output Capacitance Cob (pF)

1.5
f = 1 MHz

Gain Bandwidth Product fT (MHz)

1,000
IE = 0
1.3 VCE = 6 V
800

1.1
600

0.9
400

0.7 200

0.5 0
0.3 1.0 3 10 30 0.1 0.2 0.5 1.0 2 5 10 20

Collector to Base Voltage VCB (V) Collector Current IC (mA)

Noise Figure vs. Collector Current Noise Figure vs. Signal Source Resistance

8 8
IC = 1 mA VCE = 6 V
f = 100 MHz IC = 1 mA
Rg = 50 Ω f = 100 MHz
Noise figure NF (dB)

Noise figure NF (dB)

6 6

4 4

2 2

0 0
0.2 0.5 1.0 2 5 10 20 50 100 200 500 1,000

Collector Current IC (mA) Signal Source Resistance Rg (Ω)

Noise Figure vs. Collector to

Emitter Voltage 100 MHz Power Gain Test Circuit

8
VCE = 6 V
f = 100 MHz
Rg = 50 Ω IN D.U.T.
Noise figure NF (dB)

f = 100 MHz 300 p 0.1 µ

6 OUT
Rg = 100 Ω 10 p
max Rl = 550 Ω
3k
500
4 0.01 µ

0.01 µ 0.01 µ
Unit R : Ω
2 VEE VCC C:F

0
1 2 5 10 20

Collecter to Emitter Voltage VCE (V)

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2SC535

Reverse Transfer Admittance

Characteristics
Input Admittance Characteristics Reverse Transfer Conductance gre (mS)
–0.20 –0.16 –0.12 –0.08 –0.04 0

Reverse Transfer Suceptance bre (mS)

18
yie = gie + jbie
16 VCE = 6 V yre = gre + jbre
Input Suceptance bie (mS)

VCE = 6 V f = 50 MHz
14 –0.2
70
12
150 200 100 –0.4
10 f = 200 MHz 100
70
8 150 150
50 MHz –0.6
6 100 5 mA 200
70 3 mA
4 –0.8
2 mA IC = 5 mA 3 2 1
2 50
IC = 1 mA
–1.0
0 2 4 6 8 10 12 14 16 18

Input Conductance gie (mS)

Forward Transfer Admittance

Characteristics
Forward Transfer Conductance gfe (mS) Output Admittance Characteristics
0 20 40 60 80 100 120
Forward Transfer Suceptance bfe (mS)

yfe = gfe + jbfe 2.4

yoe = goe + jboe
Output Suceptance boe (mS)

VCE = 6 V
–20 VCE = 6 V
IC = 1 mA 2.0

–40 2 mA IC = 1 mA 2 3 5
f = 50 MHz 1.6
f = 200 MHz
–60 3 mA
1.2
70 150
–80
5 mA 100 0.8 100
200 150
–100 70
0.4
50
–120

0 0.1 0.2 0.3 0.4 0.5 0.6

Output Conductance goe (mS)

Input Admittance vs. Collector

to Emitter Voltage Input Admittance vs. Collector Current

10 20
yie = gie + jbie
Input Admittance yie (mS)

Input Admittance yie (mS)

bie 10 VCE = 6 V
5 f = 100 MHz
5
yie = gie + jbie bie
IC = 1 mA
f = 100 MHz 2
2
gie 1.0

1.0 0.5 gie

0.5 0.2
1 2 5 10 20 0.1 0.2 0.5 1.0 2 5 10

Collector to Emitter Voltage VCE (V) Collector Current IC (mA)

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2SC535

Reverse Transfer Admittance vs. Reverse Transrer Admittance vs.

Collector to Emitter Voltage Collector Current

Reverse Transfer Suceptance bre (mS)

Reverse Transfer Conductance gre (mS)

Reverse Transfer Suceptance bre (mS)

Reverse Transfer Conductance gre (mS)

–1.0 –0.1 –1.0 –0.1

–0.5 bre –0.05

–5 bre –0.05
yre = gre + jbre
–0.2 VCE = 6 V –0.02
yre = gre + jbre f = 100 MHz
IC = 1 mA –0.1 gre –0.01
–0.2 f = 100 MHz –0.02
–0.05 –0.005

–0.1 –0.01
gre
–0.02 –0.002

–0.05 –0.005 –0.01 –0.001

1 2 5 10 20 0.1 0.2 0.5 1.0 2 5 10

Collector to Emitter Voltage VCE (V) Collector Current IC (mA)

Forward Transfer Admittance vs. Forward Transrer Admittance vs.

Collector to Emitter Voltage Collector Current
Forward Transfer Admittance yie (mS)

Forward Transrer Admittance yie (mS)

100 100
yfe = gfe + jbfe yfe = gfe + jbfe
IC = 1 mA VCE = 6 V
f = 100 MHz 50 f = 100 MHz
50
gfe
20
gfe –bfe
10
20

5
–bfe
10
2

5 1
1 2 5 10 20 0.1 0.2 0.5 1.0 2 5 10

Collector to Emitter Voltage VCE (V) Collector Current IC (mA)

Output Admittance vs. Collector

to Emitter Voltage Output Admittance vs. Collector Current

2.0 0.2 2.0

Output Conductance goe (mS)
Output Suceptance boe (mS)

Output Admittance yoe (mS)

1.0 boe
goe
1.0 0.1
boe 0.5

0.5 0.05
0.2
yeo = goe + jboe
IC = 1 mA 0.1
f = 100 MHz goe
0.2 0.02 0.05 yoe = goe + jboe
VCE = 6 V
f = 100 MHz
0.1 0.01 0.02
1 2 5 10 20 0.1 0.2 0.5 1.0 2 5 10

Collector to Emitter Voltage VCE (V) Collector Current IC (mA)

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2SC535

Package Dimensions
JEITA Package Code RENESAS Code Package Name MASS[Typ.]
Unit: mm
SC-43A PRSS0003DA-C TO-92(2) / TO-92(2)V 0.25g

4.8 ± 0.3 3.8 ± 0.3

5.0 ± 0.2
2.3 Max
12.7 Min
0.60 Max

0.7
0.5 Max 0.5 Max

1.27
2.54

Ordering Information
Part Name Quantity Shipping Container
2SC535BTZ 2500 Hold Box, Radial Taping
2SC535CTZ
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.

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