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    BUX81

    Uploaded by

    Roozbeh Bahmanyar

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    BUX81

    Uploaded by

    Roozbeh Bahmanyar
    7 views4 pages

    Copyright

    © © All Rights Reserved

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    PDF, TXT or read online from Scribd

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    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    7 views4 pages

    BUX81

    Uploaded by

    Roozbeh Bahmanyar

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors BUX81

    DESCRIPTION
    ·With TO-3 package
    ·High voltage ;fast switching speed
    ·Low saturation voltage

    APPLICATIONS
    ·Switching-mode power supplies ,CRT
    scanning,inverters,and other industrial
    applications

    PINNING(see fig.2)

    PIN DESCRIPTION

    1 Base

    2 Emitter
    Fig.1 simplified outline (TO-3) and symbol
    3 Collector

    ABSOLUTE MAXIMUM RATINGS(Ta=25 )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 1000 V

    VCEO Collector-emitter voltage Open base 450 V

    VEBO Emitter-base voltage Open collector 10 V

    IC Collector current 10 A

    ICM Collector current-peak 15 A

    IB Base current 4 A

    IBM Base current-peak 6 A

    PT Total power dissipation TC=25 150 W

    Tj Junction temperature 200

    Tstg Storage temperature -65~200

    THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth j-C Thermal resistance junction to case 1.17 /W

    Downloaded from: http://www.datasheetcatalog.com/


    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors BUX81

    CHARACTERISTICS
    Tj=25 unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; L=25mH 450 V

    VCEsat-1 Collector-emitter saturation voltage IC=5 A;IB=1 A 1.5 V

    VCEsat-2 Collector-emitter saturation voltage IC=8 A;IB=2.5 A 3.0 V

    VBEsat-1 Base-emitter saturation voltage IC=5 A;IB=1 A 1.4 V

    VBEsat-2 Base-emitter saturation voltage IC=8 A;IB=2.5 A 1.8 V

    VCE=1000V;VBE=0 1.0
    ICES Collector cut-off current mA
    TC=125 3.0

    IEBO Emitter cut-off current VEB=10V; IC=0 10 mA

    hFE DC current gain IC=1.2A ; VCE=5V 20

    fT Transition frequency IC=0.5A ; VCE=10V 8 MHz

    COB Output capacitance IE=0 ; VCB=20V;f=0.1MHz 105 pF

    Switching times

    ton Turn-on time 0.5 µs

    IC=5A ;IB1=1A; IB2=-2A


    ts Storage time 3.5 µs
    VCC=250V

    tf Fall time 0.8 µs

    Downloaded from: http://www.datasheetcatalog.com/


    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors BUX81

    PACKAGE OUTLINE

    Fig.2 Outline dimensions

    Downloaded from: http://www.datasheetcatalog.com/


    This datasheet has been downloaded from:

    www.DatasheetCatalog.com

    Datasheets for electronic components.

    Downloaded from: http://www.datasheetcatalog.com/

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