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    2sd1000l 2sd1000k

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    Александр VZN
    This document provides specifications for an NPN silicon epitaxial planar transistor suitable for switching and low power amplifier applications, including absolute maximum ratings, electrical characteristics, and package outline dimensions.

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    Download as PDF, TXT or read online from Scribd

    2sd1000l 2sd1000k

    Uploaded by

    Александр VZN
    11 views3 pages
    This document provides specifications for an NPN silicon epitaxial planar transistor suitable for switching and low power amplifier applications, including absolute maximum ratings, electrical characteristics, and package outline dimensions.

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    2sd1000l_2sd1000k

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    This document provides specifications for an NPN silicon epitaxial planar transistor suitable for switching and low power amplifier applications, including absolute maximum ratings, electrical characteristics, and package outline dimensions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    11 views3 pages

    2sd1000l 2sd1000k

    Uploaded by

    Александр VZN
    This document provides specifications for an NPN silicon epitaxial planar transistor suitable for switching and low power amplifier applications, including absolute maximum ratings, electrical characteristics, and package outline dimensions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    2SD1000

    NPN Silicon Epitaxial Planar Transistor

    for switching and amplifier applications.


    Especially suitable for AF-driver stages
    and low power output stages.

    Absolute Maximum Ratings (Ta = 25 OC)


    Parameter Symbol Value Unit

    Collector Base Voltage VCBO 40 V


    Collector Emitter Voltage VCEO 25 V
    Emitter Base Voltage VEBO 6 V
    Collector Current IC 0.8 A
    Power Dissipation Ptot 625 mW
    Junction Temperature Tj 150 O
    C
    Storage Temperature Range TStg - 55 to + 150 O
    C

    Characteristics at Ta = 25 OC
    Parameter Symbol Min. Typ. Max. Unit
    DC Current Gain
    at VCE = 1 V, IC = 5 mA hFE 45 - - -
    at VCE = 1 V, IC = 100 mA Current Gain Group L hFE 120 - 27 0 -
    K hFE 200 - 400 -
    at VCE = 1 V, IC = 800 mA hFE 40 - - -
    Collector Base Cutoff Current
    ICBO - - 100 nA
    at VCB = 35 V
    Emitter Base Cutoff Current
    IEBO - - 100 nA
    at VEB = 6 V
    Collector Base Breakdown Voltage
    V(BR)CBO 40 - - V
    at IC = 100 µA
    Collector Emitter Breakdown Voltage
    V(BR)CEO 25 - - V
    at IC = 2 mA
    Emitter Base Breakdown Voltage
    V(BR)EBO 6 - - V
    at IE = 100 µA
    Collector Emitter Saturation Voltage
    VCE(sat) - - 0.5 V
    at IC = 800 mA, IB = 80 mA
    Base Emitter Saturation Voltage
    VBE(sat) - - 1.2 V
    at IC = 800 mA, IB = 80 mA
    Base Emitter Voltage
    VBE - - 1 V
    at IC = 10 mA, VCE = 1 V
    Gain Bandwidth Product
    fT 100 - - MHz
    at VCE = 10 V, IC = 50 mA
    Collector Base Capacitance
    COB - 9 - pF
    at VCB = 10 V, f = 1 MHz

    REV.08 1 of 3
    2SD1000

    REV.08 2 of 3
    2SD1000
    SOT-89 PACKAGE OUTLINE

    REV.08 3 of 3

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