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    NPN Silicon Epitaxial Planar Transistor: Semtech Electronics LTD

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    alexjcc10
    This document provides specifications for an NPN silicon epitaxial planar transistor intended for high voltage and high speed switching applications. It lists maximum ratings, characteristics at room temperature, and electrical parameters.

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    NPN Silicon Epitaxial Planar Transistor: Semtech Electronics LTD

    Uploaded by

    alexjcc10
    102 views2 pages
    This document provides specifications for an NPN silicon epitaxial planar transistor intended for high voltage and high speed switching applications. It lists maximum ratings, characteristics at room temperature, and electrical parameters.

    Original Title

    13001 Transistor

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    This document provides specifications for an NPN silicon epitaxial planar transistor intended for high voltage and high speed switching applications. It lists maximum ratings, characteristics at room temperature, and electrical parameters.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    102 views2 pages

    NPN Silicon Epitaxial Planar Transistor: Semtech Electronics LTD

    Uploaded by

    alexjcc10
    This document provides specifications for an NPN silicon epitaxial planar transistor intended for high voltage and high speed switching applications. It lists maximum ratings, characteristics at room temperature, and electrical parameters.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    13001

    NPN Silicon Epitaxial Planar Transistor

    for high voltage and high speed switching applications

    1. Emitter 2. Collector 3. Base


    TO-92 Plastic Package
    Absolute Maximum Ratings (Ta = 25 C) O

    Parameter Symbol Value Unit

    Collector Base Voltage VCBO 500 V


    Collector Emitter Voltage VCEO 400 V
    Emitter Base Voltage VEBO 9 V
    Collector Current (DC) IC 0.3 A
    Total Power Dissipation Ptot 0.75 W

    Junction Temperature Tj 150 O


    C
    Storage Temperature Range Tstg - 55 to + 150 O
    C
    Characteristics at Ta = 25 C O

    Parameter Symbol Min. Max. Unit


    DC Current Gain
    at VCE = 10 V, IC = 0.25 mA hFE 5 - -
    at VCE = 20 V, IC = 20 mA hFE 10 40 -
    Collector Base Cutoff Current
    ICBO - 100 µA
    at VCB = 500 V
    Collector Emitter Cutoff Current
    ICEO - 200 µA
    at VCE = 400 V
    Emitter Base Cutoff Current
    IEBO - 100 µA
    at VEB = 9 V
    Collector Base Breakdown Voltage
    V(BR)CBO 500 - V
    at IC = 100 µA
    Collector Emitter Breakdown Voltage
    V(BR)CEO 400 - V
    at IC = 1 mA
    Emitter Base Breakdown Voltage
    V(BR)EBO 9 - V
    at IE = 100 µA
    Collector Emitter Saturation Voltage
    VCE(sat) - 0.5 V
    at IC = 50 mA, IB = 10 mA
    Base Emitter Saturation Voltage
    VBE(sat) - 1.2 V
    at IC = 50 mA, IB = 10 mA
    Transition Frequency
    fT 8 - MHz
    at VCE = 20 V, IC = 20 mA, f = 1 MHz
    Storage Time
    ts - 3 μs
    at UI9600, IC = 100 mA
    Fall Time
    tf - 1 μs
    at UI9600, IC = 100 mA

    SEMTECH ELECTRONICS LTD.


    ®
    Dated : 13/04/2016 CL Rev: 02
    13001

    SEMTECH ELECTRONICS LTD.


    ®
    Dated : 13/04/2016 CL Rev: 02

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