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    PJ2N9013 NPN Epitaxial Silicon Transistor: 1W Output Amplifier of Potable Radios in Class B Push-Pull Operation

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    serrano.flia.co
    This document provides specifications for the PJ2N9013 NPN epitaxial silicon transistor. It is suitable for use in 1W output amplifiers of portable radios in Class B push-pull operation. Key specifications include a high total power dissipation of 625mW and high collector current of 500mA. Absolute maximum ratings and typical electrical characteristics are provided. Static characteristic curves show DC current gain, base-emitter saturation voltage, and collector-emitter saturation voltage.

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    PJ2N9013 NPN Epitaxial Silicon Transistor: 1W Output Amplifier of Potable Radios in Class B Push-Pull Operation

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    serrano.flia.co
    45 views3 pages
    This document provides specifications for the PJ2N9013 NPN epitaxial silicon transistor. It is suitable for use in 1W output amplifiers of portable radios in Class B push-pull operation. Key specifications include a high total power dissipation of 625mW and high collector current of 500mA. Absolute maximum ratings and typical electrical characteristics are provided. Static characteristic curves show DC current gain, base-emitter saturation voltage, and collector-emitter saturation voltage.

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    2N9013

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    This document provides specifications for the PJ2N9013 NPN epitaxial silicon transistor. It is suitable for use in 1W output amplifiers of portable radios in Class B push-pull operation. Key specifications include a high total power dissipation of 625mW and high collector current of 500mA. Absolute maximum ratings and typical electrical characteristics are provided. Static characteristic curves show DC current gain, base-emitter saturation voltage, and collector-emitter saturation voltage.

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    © All Rights Reserved
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    45 views3 pages

    PJ2N9013 NPN Epitaxial Silicon Transistor: 1W Output Amplifier of Potable Radios in Class B Push-Pull Operation

    Uploaded by

    serrano.flia.co
    This document provides specifications for the PJ2N9013 NPN epitaxial silicon transistor. It is suitable for use in 1W output amplifiers of portable radios in Class B push-pull operation. Key specifications include a high total power dissipation of 625mW and high collector current of 500mA. Absolute maximum ratings and typical electrical characteristics are provided. Static characteristic curves show DC current gain, base-emitter saturation voltage, and collector-emitter saturation voltage.

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    © All Rights Reserved
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    of 3

    PJ2N9013

    NPN Epitaxial Silicon Transistor

    1W OUTPUT AMPLIFIER OF POTABLE


    RADIOS IN CLAS S B PUS H-PULL OPERATION TO-92 SOT-23
    • High total power dissipation(PT=625mW)
    • High collector Current (Ic=500mA)
    • Complementary to PJ2N9012
    • Excellent hEF Linearity

    ABSOLUTE MAXIMUM RATINGS (Ta= 25 °C)


    P in : 1. Emitter P in : 1. Base
    2. Base 2. Emitter
    Rating Symbol Value Uint
    3. Collector 3. Collector
    Collector Base Voltage VCBO 40 V
    Collector Emitter Voltage VCEO 20 V
    Emitter Base Voltage VEBO 5 V
    ORDERING INFORMATION
    Collector Current Ic 500 A
    Collector Dissipation Pc 625 W
    Device Operating Temperature Package
    Junction Temperature Tj 150 °C
    PJ2N9013CT -20℃～+85℃ TO-92
    Storage Temperature Tstg -55 ~150 °C PJ2N9013CX SOT-23

    ELECTRICAL CHARACTERISTICS (Ta= 25 °C)

    Characte ristic Symbol Te st Conditions Min Typ Max Unit


    Collector-Base Breakdown Voltage BVCBO IC= 100µA , IE =0 40 V
    Collector-Emitter Breakdown Voltage BVCEO IC= 1mA , IB=0 20 V
    Emitter-Base Breakdown Voltage BVEBO IE =100µA , IC=0 5 V
    Collector Cut-off Current ICBO VCB= 25V , IE = 0 100 nA
    Emitter Cut-off Current IEBO VEB= 3V , IC=0 100 nA
    DC Current Gain hFE1 VEB= 1V, IC =50mA 64 120 202
    hFE2 VEB= 1V, IC =500mA 40 90
    Collector- Base Saturation Voltage VCE(sat) IC= 500 mA , IB=50mA 0.16 0.6 V
    Base-Emitter Saturation Voltage VBE(sat) IC= 500mA , IB=50mA 0.91 1.2 V
    Base-Emitter On Voltage VBE(ON) VCE =1V, Ic =10mA 0.6 0.67 0.7 V

    hEF CLASSIFICATION

    Classification D E F G H
    hEF 64-91 78-112 96-135 112-166 144-202

    1-3 2002/01.rev.A
    PJ2N9013
    NPN Epitaxial Silicon Transistor

    STATIC CHARACTERISTIC DC CURRENT GAIN

    BASE-EMITTER SATURATION VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT


    COLLECTOR-EMITTER SATURATION VOLTAGE

    2-3 2002/01.rev.A
    PJ2N9013
    NPN Epitaxial Silicon Transistor

    3-3 2002/01.rev.A

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