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    ST 8550

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    ly7123
    This document provides specifications for the ST 8550 PNP silicon epitaxial planar transistor. It is intended for switching and amplifier applications, especially suitable for audio driver stages and low power output stages. The document lists maximum ratings and characteristics such as DC current gain, breakdown voltages, and capacitance.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    ST 8550

    Uploaded by

    ly7123
    5 views1 page
    This document provides specifications for the ST 8550 PNP silicon epitaxial planar transistor. It is intended for switching and amplifier applications, especially suitable for audio driver stages and low power output stages. The document lists maximum ratings and characteristics such as DC current gain, breakdown voltages, and capacitance.

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    This document provides specifications for the ST 8550 PNP silicon epitaxial planar transistor. It is intended for switching and amplifier applications, especially suitable for audio driver stages and low power output stages. The document lists maximum ratings and characteristics such as DC current gain, breakdown voltages, and capacitance.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    5 views1 page

    ST 8550

    Uploaded by

    ly7123
    This document provides specifications for the ST 8550 PNP silicon epitaxial planar transistor. It is intended for switching and amplifier applications, especially suitable for audio driver stages and low power output stages. The document lists maximum ratings and characteristics such as DC current gain, breakdown voltages, and capacitance.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    ST 8550 (2A)

    PNP Silicon Epitaxial Planar Transistor

    for switching and amplifier applications. Especially


    suitable for AF-driver stages and low power output
    stages.

    The transistor is subdivided into two groups C and


    D according to its DC current gain. 1. Emitter 2. Base 3. Collector
    TO-92 Plastic Package
    Weight approx. 0.19g

    Absolute Maximum Ratings (Ta = 25 OC)


    Parameter Symbol Value Unit
    Collector Base Voltage -VCBO 40 V
    Collector Emitter Voltage -VCEO 25 V
    Emitter Base Voltage -VEBO 6 V
    Collector Current -IC 2 A
    Base Current -IB 100 mA
    Power Dissipation Ptot 1 W
    Junction Temperature Tj 150 O
    C
    Storage Temperature Range TS - 55 to + 150 O
    C
    Characteristics at Ta = 25 C O

    Parameter Symbol Min. Typ. Max. Unit


    DC Current Gain
    at -VCE = 1 V, -IC = 5 mA hFE 45 - - -
    at -VCE = 1 V, -IC = 100 mA 8550C hFE 120 - 200 -
    8550D hFE 160 - 300 -
    at -VCE = 1 V, -IC = 1.5 A hFE 40 - - -
    Collector Base Cutoff Current
    -ICBO - - 100 nA
    at -VCB = 35 V
    Emitter Base Cutoff Current
    -IEBO - - 100 nA
    at -VEB = 6 V
    Collector Base Breakdown Voltage
    -V(BR)CBO 40 - - V
    at -IC = 100 µA
    Collector Emitter Breakdown Voltage
    -V(BR)CEO 25 - - V
    at -IC = 2 mA
    Emitter Base Breakdown Voltage
    -V(BR)EBO 6 - - V
    at -IE = 100 µA
    Collector Emitter Saturation Voltage
    -VCE(sat) - - 0.5 V
    at -IC = 1.5 A, -IB = 100 mA
    Base Emitter Saturation Voltage
    -VBE(sat) - - 1.2 V
    at -IC = 1.5 A, -IB = 100 mA
    Base Emitter On Voltage
    -VBE(on) - - 1 V
    at -IC = 10 mA, -VCE = 1 V
    Gain Bandwidth Product
    fT 120 - - MHz
    at -VCE = 10 V, -IC = 50 mA
    Collector Base Capacitance
    COB - 15 - pF
    at -VCB = 10 V, f = 1 MHz

    SEMTECH ELECTRONICS LTD.


    (Subsidiary of Sino-Tech International Holdings Limited, a company
    listed on the Hong Kong Stock Exchange, Stock Code: 724)
    ®
    Dated : 14/08/2008

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