NPN Switching Transistor

Features:

• High current (Maximum 600 mA)

Applications:

Designed for high speed switching application at collector current up to 0.5 A and feature useful
current gain over a wide range of collector current, low leakage current and low saturation
voltage

TO-18

Absolute Maximum Ratings (Ta = 25°C)

Symbol Parameter Value Unit

VCBO Collector - base voltage 75 V

VCEO Collector - emitter voltage 40 V

VEBO Emitter - base voltage 6 V

IC Collector current 0.8 A

Total dissipation at TA = 25°C 0.5 W

Ptot
Total dissipation at TC = 25°C 1.8 W

TJ Junction temperature 175 °C

Tstg Storage temperature -65 to 200 °C

Thermal Characteristics
Symbol Parameter Maximum Unit

Rth j-a Thermal resistance, junction to ambient 300 °C/W

Rth j-c Thermal resistance, junction to case 83.3 °C/W

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 NPN Switching Transistor

Electrical Characteristics (TC = 25°C Unless Otherwise Specified)

Symbol Parameter Conditions Minimum Maximum Unit

V (BR) CBO Collector - base breakdown voltage IC = 10 µA; IE = 0 75 - V

V (BR) CEO Collector - emitter Breakdown Voltage IC = 10 mA; IE = 0 40 - V

V (BR) EBO Emitter - base breakdown voltage IC = 10 µA; IE = 0 6 - V

ICBO Collector cut off current VCE = 60 V; IB = 0 - 10 nA

IEBO Emitter cut off current VEB = 3 V; IC = 0 - 10 nA

VCE (sat) 1 Collector - emitter saturation voltage IC = 150 mA; IB = 15 mA - 0.4 V

VCE (sat) 2 Collector - emitter saturation voltage IC = 500 mA; IB = 50 mA - 1 V

VBE (sat) 1 Base - emitter saturation voltage IC = 150 mA; IB = 15 mA 0.6 1.2 V

VBE (sat) 2 Base - emitter saturation voltage IC = 500 mA; IB = 50 mA - 2 V

HFE1 DC current gain IC = 0.5 A; VCE = 10 V 40 - -

HFE2 DC current gain IC = 0.15 A; VCE = 10 V 100 300 -

fT Transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 300 - MHz

CEBO Emitter base capacitance IC = 0; VEB = 0.5 V; f = 100 MHz - 25 pF

CCBO Collector base capacitance IC = 0; VEB = 10 V; f = 100 MHz - 8 pF

Part Number Table

Description Part Number

NPN Switching Transistor 2N2222A

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