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    ST 2SC1740: G S P Form A Is Available

    Uploaded by

    andirahmantanjung
    Transistor

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    ST 2SC1740: G S P Form A Is Available

    Uploaded by

    andirahmantanjung
    54 views2 pages
    Transistor

    Original Title

    C1740_ETC

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

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    Transistor

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    54 views2 pages

    ST 2SC1740: G S P Form A Is Available

    Uploaded by

    andirahmantanjung
    Transistor

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    ST 2SC1740

    NPN Silicon Epitaxial Planar Transistor


    for switching and AF amplifier applications.

    The transistor is subdivided into four groups Q, R, S


    and E. according to its DC current gain.

    On special request, these transistors can be


    manufactured in different pin configurations.

    TO-92 Plastic Package


    Weight approx. 0.19g

    Absolute Maximum Ratings (Ta = 25? )

    Symbol Value Unit


    Collector Base Voltage VCBO 60 V

    Collector Emitter Voltage VCEO 50 V


    Emitter Base Voltage VEBO 5 V
    Collector Current IC 150 mA

    Power Dissipation Ptot 300 mW


    O
    Junction Temperature Tj 150 C
    O
    Storage Temperature Range TS -55 to +150 C

    G S P FORM A IS AVAILABLE

    Тел.: (495) 795-0805


    Факс: (495) 234-1603
    РАДИОТЕХ-ТРЕЙД Эл. почта: [email protected]
    Веб: www.rct.ru

    www.DataSheet.in
    ST 2SC1740

    Characteristics at Tamb=25 OC

    Symbol Min. Typ. Max. Unit


    DC Current Gain
    at VCE=6V, IC=1mA Q hFE 120 - 270 -
    R hFE 180 - 390 -
    S hFE 270 - 560 -
    E hFE 390 - 820 -
    Collector Base Breakdown Voltage
    at IC=50µA V(BR)CBO 60 - - V
    Collector Emitter Breakdown Voltage
    at IC=1mA V(BR)CEO 50 - - V
    Emitter Base Breakdown Voltage
    at IE=50µA V(BR)EBO 5 - - V
    Collector Cutoff Current
    at VCB=60V ICBO - - 0.1 µA
    Emitter Cutoff Current
    at VEB=5V IEBO - - 0.1 µA
    Collector Saturation Voltage
    at IC=50mA, IB=5mA VCE(sat) - - 0.4 V
    Gain Bandwidth Product
    at VCE=12V, IC=2mA fT - 180 - MHz
    Output Capacitance
    at VCB=12V, f=1MHz COB - 2 3.5 pF

    G S P FORM A IS AVAILABLE

    SEMTECH ELECTRONICS LTD.


    (Subsidiary of Semtech International Holdings Limited, acompany
    listed on the Hong Kong Stock Exchange, Stock Code: 724)
    ®
    Dated : 07/12/2002

    www.DataSheet.in

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