JC ET: SOT-23 Plastic-Encapsulate Transistors
JC ET: SOT-23 Plastic-Encapsulate Transistors
JC ET: SOT-23 Plastic-Encapsulate Transistors
,LTD
FEATURES
z Complimentary to S8550
1. BASE
z Collector Current: IC=0.5A
2. EMITTER
3. COLLECTOR
MARKING: J3Y
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 500 mA
PC Collector Power Dissipation 300 mW
RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃
CLASSIFICATION OF hFE(1)
Rank L H J
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Typical Characteristics
80 350uA Ta=100℃
hFE
300uA
IC
Ta=25℃
DC CURRENT GAIN
COLLECTOR CURRENT
60
250uA
100
200uA
40
150uA
100uA
20
IB=50uA
0 10
0 4 8 12 16 20 1 3 10 30 100 500
VCEsat —— IC VBEsat —— IC
500 1.2
300
COLLECTOR-EMITTER SATURATION
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
VOLTAGE VCEsat (mV)
0.8 Ta=25℃
100
Ta=100℃
Ta=100℃
0.4
30 Ta=25℃
β=10 β=10
10 0.0
1 3 10 30 100 500 1 3 10 30 100 500
Cib
30
(pF)
IC
30
Ta=25℃
COLLECTOR CURRENT
10
Cob
CAPACITANCE
Ta=100℃ 10
1
3
0.3
0.1 1
0.2 0.4 0.6 0.8 1.0 0.1 0.3 1 3 10 20
fT —— IC PC —— Ta
1000 400
VCE=6V
Ta=25℃
(MHz)
300
fT
TRANSITION FREQUENCY
PC (mW)
100 200
100
10 0
10 30 100 0 25 50 75 100 125 150
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SOT-23 Package Outline Dimensions
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SOT-23 Tape and Reel
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