JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

TO-92 Plastic-Encapsulate Transistors

TO – 92
S9018 TRANSISTOR (NPN)
1.EMITTER

FEATURES 2.BASE
z High Current Gain Bandwidth Product
3.COLLECTOR

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit

VCBO Collector-Base Voltage 25 V
VCEO Collector-Emitter Voltage 18 V
VEBO Emitter-Base Voltage 4 V
IC Collector Current -Continuous 50 mA
PC Collector Power Dissipation 0.4 W
RθJA Thermal Resistance From Junction To Ambient 312.5 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 25 V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 18 V
Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 4 V
Collector cut-off current ICBO VCB=20V,IE=0 0.1 nA
Collector cut-off current ICEO VCE=15V,IB=0 0.1 μA
Emitter cut-off current IEBO VEB=3V,IC=0 0.1 μA
DC current gain hFE VCE=5V, IC=1mA 28 270
Collector-emitter saturation voltage VCE(sat) IC=10mA,IB=1mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=10mA,IB=1mA 1.42 V
Transition frequency fT VCE=5V,IC=50mA,f=400MHz 800 MHz

CLASSIFICATION OF hFE
RANK D E F G H I J
RANGE 28-45 39-60 54-80 72-108 97-146 132-198 180-270

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Typical Characteristics

Static Characteristic hFE —— IC

10 160

COMMON COMMON EMITTER

100uA VCE=5V
EMITTER
COLLECTOR CURRENT IC (mA)

90uA Ta=25℃
8
Ta=100℃
80uA 120

DC CURRENT GAIN hFE

70uA
Ta=25℃
6 60uA

50uA 80

4
40uA

30uA
40
2 20uA

IB=10uA

0 0
0 2 4 6 8 10 1 10 50
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VBEsat —— IC VCEsat —— IC
1.0 0.3
β=10 β=10
COLLECTOR-EMITTER SATURATION
BASE-EMITTER SATURATION

Ta=25℃ Ta=100℃
VOLTAGE VBEsat (V)

0.8 0.1
VOLTAGE VCEsat (V)

Ta=25℃

Ta=100℃
0.6

0.4 0.01
0.1 1 10 50 1 10 50

COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

IC —— VBE Cob / Cib —— VCB / VEB

10
COMMON EMITTER f=1MHz
VCE=5V IE=0 / IC=0
IC (mA)

Ta=25℃
Ta=100℃
10 Cib
CAPACITANCE C (pF)
COLLECTOR CURRENT

Cob
1

Ta=25℃
1

0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1 10 20
BASE-EMITTER VOLTAGE VBE(V) REVERSE VOLTAGE V (V)

fT —— IC PC —— Ta
1200 0.5
TRANSITION FREQUENCY fT (MHz)

1000 0.4
COLLECTOR POWER DISSIPATION

800 0.3
PC (W)

600 0.2

400 0.1

VCE=5V
Ta=25℃
200 0.0
1 3 10 20 0 25 50 75 100 125 150
COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta (℃ )

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 TO-92 Package Outline Dimensions

Dimensions In Millimeters Dimensions In Inches

Symbol
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
Φ 1.600 0.063
h 0.000 0.380 0.000 0.015

TO-92 Suggested Pad Layout

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