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    Datasheet b1340

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    manuel vivas
    The document provides specifications for the isc Silicon PNP Darlington Power Transistor 2SB1340. It has a collector-emitter breakdown voltage of -120V minimum and high DC current gain of 2000 minimum at -3V collector-emitter voltage and -2A collector current. It is designed for power amplifier applications with absolute maximum ratings including -120V collector-emitter voltage, -6A continuous collector current, and 150°C junction temperature. Electrical characteristics include a minimum collector-emitter breakdown voltage of -120V, saturation voltage below -1.5V at -3A collector current, and current gain bandwidth product of 12MHz minimum.

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    Datasheet b1340

    Uploaded by

    manuel vivas
    38 views2 pages
    The document provides specifications for the isc Silicon PNP Darlington Power Transistor 2SB1340. It has a collector-emitter breakdown voltage of -120V minimum and high DC current gain of 2000 minimum at -3V collector-emitter voltage and -2A collector current. It is designed for power amplifier applications with absolute maximum ratings including -120V collector-emitter voltage, -6A continuous collector current, and 150°C junction temperature. Electrical characteristics include a minimum collector-emitter breakdown voltage of -120V, saturation voltage below -1.5V at -3A collector current, and current gain bandwidth product of 12MHz minimum.

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    Electrónica

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    datasheet b1340

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    The document provides specifications for the isc Silicon PNP Darlington Power Transistor 2SB1340. It has a collector-emitter breakdown voltage of -120V minimum and high DC current gain of 2000 minimum at -3V collector-emitter voltage and -2A collector current. It is designed for power amplifier applications with absolute maximum ratings including -120V collector-emitter voltage, -6A continuous collector current, and 150°C junction temperature. Electrical characteristics include a minimum collector-emitter breakdown voltage of -120V, saturation voltage below -1.5V at -3A collector current, and current gain bandwidth product of 12MHz minimum.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    38 views2 pages

    Datasheet b1340

    Uploaded by

    manuel vivas
    The document provides specifications for the isc Silicon PNP Darlington Power Transistor 2SB1340. It has a collector-emitter breakdown voltage of -120V minimum and high DC current gain of 2000 minimum at -3V collector-emitter voltage and -2A collector current. It is designed for power amplifier applications with absolute maximum ratings including -120V collector-emitter voltage, -6A continuous collector current, and 150°C junction temperature. Electrical characteristics include a minimum collector-emitter breakdown voltage of -120V, saturation voltage below -1.5V at -3A collector current, and current gain bandwidth product of 12MHz minimum.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 2

    www.DataSheet4U.

    com
    INCHANGE Semiconductor isc Product Specification

    isc Silicon PNP Darlington Power Transistor 2SB1340

    DESCRIPTION
    ·Collector-Emitter Breakdown Voltage-
    : V(BR)CEO= -120V(Min)
    ·High DC Current Gain-
    : hFE= 2000(Min)@ (VCE= -3V, IC= -2A)
    ·Complement to Type 2SD1889

    APPLICATIONS
    ·Designed for power amplifier applications.

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage -120 V

    VCEO Collector-Emitter Voltage -120 V

    VEBO Emitter-Base Voltage -6 V

    IC Collector Current-Continuous -6 A

    ICM Collector Current-Peak -10 A

    Collector Power Dissipation


    2
    @Ta=25℃
    PC W
    Collector Power Dissipation
    30
    @TC=25℃

    TJ Junction Temperature 150 ℃

    Tstg Storage Temperature -55~150 ℃

    isc Website：www.iscsemi.cn
    www.DataSheet4U.com
    INCHANGE Semiconductor isc Product Specification

    isc Silicon PNP Darlington Power Transistor 2SB1340

    ELECTRICAL CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; IB= 0 -120 V

    V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA ; IE= 0 -120 V

    VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA


    B -1.5 V

    ICBO Collector Cutoff Current VCB= -120V ; IE= 0 -100 μA

    IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA

    hFE DC Current Gain IC= -2A ; VCE= -3V 2000 20000

    COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 70 pF

    fT Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -5V; ftest= 10MHz 12 MHz

    isc Website：www.iscsemi.cn 2

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