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    FAP-II Series: Features Outline Drawing

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    Jesús Martínez
    This document provides specifications for an 800V, 2.2Ω, 7A, 80W N-channel MOSFET. It includes maximum ratings, electrical characteristics, thermal characteristics and typical performance curves. The MOSFET has features like high speed switching, low on-resistance, no secondary breakdown, and high voltage capability. It is suitable for applications such as switching regulators, UPS systems, DC-DC converters, and power amplifiers.

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    FAP-II Series: Features Outline Drawing

    Uploaded by

    Jesús Martínez
    44 views3 pages
    This document provides specifications for an 800V, 2.2Ω, 7A, 80W N-channel MOSFET. It includes maximum ratings, electrical characteristics, thermal characteristics and typical performance curves. The MOSFET has features like high speed switching, low on-resistance, no secondary breakdown, and high voltage capability. It is suitable for applications such as switching regulators, UPS systems, DC-DC converters, and power amplifiers.

    Original Title

    2SK2561-01R

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    This document provides specifications for an 800V, 2.2Ω, 7A, 80W N-channel MOSFET. It includes maximum ratings, electrical characteristics, thermal characteristics and typical performance curves. The MOSFET has features like high speed switching, low on-resistance, no secondary breakdown, and high voltage capability. It is suitable for applications such as switching regulators, UPS systems, DC-DC converters, and power amplifiers.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    44 views3 pages

    FAP-II Series: Features Outline Drawing

    Uploaded by

    Jesús Martínez
    This document provides specifications for an 800V, 2.2Ω, 7A, 80W N-channel MOSFET. It includes maximum ratings, electrical characteristics, thermal characteristics and typical performance curves. The MOSFET has features like high speed switching, low on-resistance, no secondary breakdown, and high voltage capability. It is suitable for applications such as switching regulators, UPS systems, DC-DC converters, and power amplifiers.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    2SK2562-01R N-channel MOS-FET

    FAP-II Series 800V 2,2Ω 7A 80W

    > Features > Outline Drawing


    - High Speed Switching
    - Low On-Resistance
    - No Secondary Breakdown
    - Low Driving Power
    - High Voltage
    - VGS = ± 30V Guarantee
    - Avalanche Proof

    > Applications
    - Switching Regulators
    - UPS
    - DC-DC converters
    - General Purpose Power Amplifier

    > Maximum Ratings and Characteristics > Equivalent Circuit


    - Absolute Maximum Ratings (TC=25°C), unless otherwise specified
    Item Symbol Rating Unit
    Drain-Source-Voltage V DS 800 V
    Drain-Gate-Voltage (RGS=20KΩ) V DGR 800 V
    Continous Drain Current ID 7 A
    Pulsed Drain Current I D(puls) 21 A
    Gate-Source-Voltage V GS ±30 V
    Max. Power Dissipation PD 80 W
    Operating and Storage Temperature Range T ch 150 °C
    T stg -55 ~ +150 °C

    - Electrical Characteristics (TC=25°C), unless otherwise specified


    Item Symbol Test conditions Min. Typ. Max. Unit
    Drain-Source Breakdown-Voltage V (BR)DSS ID=1mA VGS=0V 800 V
    Gate Threshhold Voltage V GS(th) ID=1mA VDS=VGS 2,5 3,5 5,0 V
    Zero Gate Voltage Drain Current I DSS VDS=800V Tch=25°C 10 500 µA
    VGS=0V Tch=125°C 0,2 1,0 mA
    Gate Source Leakage Current I GSS VGS=±30V VDS=0V 10 100 nA
    Drain Source On-State Resistance R DS(on) ID=3A VGS=10V 1,7 2,2 Ω
    Forward Transconductance g fs ID=3A VDS=25V 2 4,5 S
    Input Capacitance C iss VDS=25V 1200 1800 pF
    Output Capacitance C oss VGS=0V 140 210 pF
    Reverse Transfer Capacitance C rss f=1MHz 50 75 pF
    Turn-On-Time ton (ton=td(on)+tr) t d(on) VCC=600V 35 55 ns
    t r ID=7A 110 170 ns
    Turn-Off-Time toff (ton=td(off)+tf) t d(off) VGS=10V 150 230 ns
    t f RGS=25 Ω 100 150 ns
    Avalanche Capability I AV L = 100µH Tch=25°C 7 A
    Diode Forward On-Voltage V SD IF=2xIDR VGS=0V Tch=25°C 1,0 1,5 V
    Reverse Recovery Time t rr IF=IDR VGS=0V 800 ns
    Reverse Recovery Charge Q rr -dIF/dt=100A/µs Tch=25°C 5,0 µC

    - Thermal Characteristics
    Item Symbol Test conditions Min. Typ. Max. Unit
    Thermal Resistance R th(ch-a) channel to air 30 °C/W
    R th(ch-c) channel to case 1,56 °C/W
    N-channel MOS-FET 2SK2562-01R
    800V 2,2Ω 7A 80W FAP-II Series
    > Characteristics
    Typical Output Characteristics Drain-Source On-State Resistance Typical Transfer Characteristics
    ID=f(VDS); 80µs pulse test; TC=25°C RDS(on) = f(Tch); ID=3A; VGS=10V ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C

    ↑ ↑ ↑
    ID [A]

    ID [A]
    RDS(ON) [Ω]
    1 2 3

    VDS [V] → Tch [°C] → VGS [V] →

    Typical Drain-Source On-State-Resistance Typical Forward Transconductance Gate Threshold Voltage


    RDS(on)=f(ID); 80µs pulse test; TC=25°C gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C VGS(th)=f(Tch); ID=1mA; VDS=VGS

    ↑ ↑ ↑
    gfs [S]

    VGS(th) [V]
    RDS(ON) [Ω]

    4 5 6

    ID [A] → ID [A] → Tch [°C] →

    Typical Capacitances Typical Gate Charge Characteristics Forward Characteristics of Reverse Diode
    C=f(VDS); VGS=0V; f=1MHz VGS=f(Qg); ID=7A, Tc=25°C IF=f(VSD); 80µs pulse test; VGS=0V

    ↑ ↑ ↑ ↑
    VDS [V]

    VGS [V]

    IF [A]
    C [F]

    7 8 9

    VDS [V] → Qg [nC] → VSD [V] →

    Power Dissipation Safe Operation Area


    PD=f(Tc) ID=f(VDS): D=0,01, Tc=25°C
    ↑
    Zth(ch-c) [K/W]

    Transient Thermal impedance


    Zthch-c=f(t) parameter:D=t/T
    ↑ 10 ↑ 12
    ID [A]
    PD[W]

    Tch [°C] → VDS [V] → t [s] →

    Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
    This datasheet has been download from:

    www.datasheetcatalog.com

    Datasheets for electronics components.

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