Acs770lcb 050B PFF T
Acs770lcb 050B PFF T
Acs770lcb 050B PFF T
Typical Application
5V
1
4 VCC
Application 1. The ACS770 outputs an analog signal, IP+ CBYP
VOUT , that varies linearly with the bidirectional AC or DC ACS770 0.1 µF
2
primary sampled current, IP , within the range specified. IP GND
RF and CF are for optimal noise management, with CF
values that depend on the application. 5
IP– 3
VIOUT VOUT
RF
ACS770-DS, Rev. 1
Thermally Enhanced, Fully Integrated, Hall Effect-Based
ACS770xCB High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
Description (continued)
conductive path are electrically isolated from the signal leads (pins
1 through 3). This allows the ACS770 family of sensor ICs to be
used in applications requiring electrical isolation without the use of
opto-isolators or other costly isolation techniques.
The device is fully calibrated prior to shipment from the factory.
The ACS770 family is lead (Pb) free. All leads are plated with 100%
matte tin, and there is no Pb inside the package. The heavy gauge
leadframe is made of oxygen-free copper.
Selection Guide
Package Primary Sampled Sensitivity
Current TOP
Part Number1 Current , IP Sens (Typ.) Packing2
Terminals Signal Pins Directionality (°C)
(A) (mV/A)
ACS770LCB-050B-PFF-T Formed Formed ±50 40. Bidirectional
ACS770LCB-050U-PFF-T Formed Formed 50 80. Unidirectional
ACS770LCB-100B-PFF-T Formed Formed ±100 20. Bidirectional –40 to 150
ACS770LCB-100U-PFF-T Formed Formed 100 40. Unidirectional
ACS770LCB-100U-PSF-T Straight Formed 100 40. Unidirectional
ACS770KCB-150B-PFF-T Formed Formed ±150 13.3 Bidirectional
34 pieces
ACS770KCB-150B-PSF-T Straight Formed ±150 13.3 Bidirectional
–40 to 125 per tube
ACS770KCB-150U-PFF-T Formed Formed 150 26.7 Unidirectional
ACS770KCB-150U-PSF-T Straight Formed 150 26.7 Unidirectional
ACS770ECB-200B-PFF-T Formed Formed ±200 10. Bidirectional
ACS770ECB-200B-PSF-T Straight Formed ±200 10. Bidirectional
–40 to 85
ACS770ECB-200U-PFF-T Formed Formed 200 20. Unidirectional
ACS770ECB-200U-PSF-T Straight Formed 200 20. Unidirectional
1Additional leadform options available for qualified volumes.
2Contact Allegro for additional packing options.
Isolation Characteristics
Characteristic Symbol Notes Rating Unit
Agency type-tested for 60 seconds per
Dielectric Strength Test Voltage* VISO 4800 VAC
UL standard 60950-1, 2nd Edition
V+ IP+
VCC
To all subcircuits
Programming
Control
C BYP
Sensitivity Control Offset Control
Dynamic Offset
Cancellation
VIOUT
Signal Recovery
CL
IP–
GND
Pin-out Diagram
IP+ 4
3 VIOUT
2 GND
1 VCC
IP– 5
COMMON OPERATING CHARACTERISTICS valid at TOP = –40°C to 150°C, CBYP = 0.1 µF, and VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Supply Voltage VCC 4.5 5.0 5.5 V
Supply Current ICC Output open – 10 15 mA
Supply Zener Voltage VZ TA = 25°C, ICC = 30 mA 6.5 7.5 – V
Power-On Delay1,2 tPOD TA = 25°C, CBYP = open – 90 – µs
Temperature Compensation
tTC TA = 25°C, CBYP = open – 90 – µs
Power-On Time1
Undervoltage Lockout (UVLO) VUVLOH TA = 25°C, VCC rising – 3.8 – V
Threshold1 VUVLOL TA = 25°C, VCC falling – 3 – V
tUVLOE TA = 25°C, CBYP = open, VCC Fall Time (5 V to 3 V) = 1 μs – 75 – µs
UVLO Enable/Disable Delay
Time1,2 TA = 25°C, CBYP = Open, – –
tUVLOD 14 µs
VCC Recover Time (3 V to 5 V) = 1 μs
VPORH TA = 25°C, VCC rising – 4 – V
Power-On Reset Voltage1
VPORL TA = 25°C, VCC falling – 2.7 – V
IP step = 60% of IP+, 10% to 90% rise time, TA = 25°C,
Rise Time1,2 tr – 4.1 – µs
CL = 0.47 nF
IP step = 60% of IP+, 20% input to 20% output, TA = 25°C,
Propagation Delay Time1,2 tPROP – 2.4 – µs
CL = 0.47 nF
IP step = 60% of IP+, 80% input to 80% output, TA = 25°C,
Response Time1,2 tRESPONSE – 4.6 – µs
COUT = 0.47 nF
Internal Bandwidth BWi –3 dB; TA = 25°C, CL = 0.47 nF – 120 – kHz
Output Load Resistance RL VIOUT to GND 4.7 – – kΩ
Output Load Capacitance CL VIOUT to GND – – 10 nF
Primary Conductor Resistance RPRIMARY TA = 25°C – 100 – µΩ
VIOUT(QBI) Bidirectional variant, IP = 0 A, TA = 25°C – VCC/2 – V
Quiescent Output Voltage1
VIOUT(QUNI) Unidirectional variant, IP = 0 A, TA = 25°C – 0.5 – V
Ratiometry1 VRAT VCC = 4.5 to 5.5 V – 100 – %
1See Characteristic Definitions section of this datasheet.
2See Timing Data Section of this data sheet
X050B PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 150°C, CBYP = 0.1 μF, VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP –50 – 50 A
SensTA Measured using full scale IP , TA = 25°C 39.04 40 40.96 mV/A
Sensitivity2 Sens(TOP)HT Measured using full scale IP , TOP = 25°C to 150°C 39.04 40 40.96 mV/A
Sens(TOP)LT Measured using full scale IP , TOP = –40°C to 25°C 38.6 40 41.4 mV/A
TOP = –40°C to 150°C, shift after AEC Q100 grade 0 qualifica-
Sensitivity Drift Over Lifetime3 ΔSensLIFE –0.72 ±0.24 0.72 mV/A
tion testing
Noise4 VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 10 – mV
Nonlinearity ELIN Measured using full scale and half scale IP, –1 – 1 %
VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV
Electrical Offset Voltage5,6 VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C –10 ±6 10 mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV
Electrical Offset Voltage Drift IP = 0 A, TOP = –40°C to 150°C, shift after AEC Q100 grade 0
∆VOE(LIFE) –5 ±2 5 mV
Over Lifetime3 qualification testing
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 50 A – 120 300 mA
ETOT(TA) Measured using full scale IP , TA = 25°C –2.4 ±0.5 2.4 %
Total Output Error7 ETOT(HT) Measured using full scale IP , TOP = 25°C to 150°C –2.4 ±1.5 2.4 %
ETOT(LT) Measured using full scale IP , TOP = –40°C to 25°C –3.5 ±2 3.5 %
Total Output Error Drift Over TOP = –40°C to 150°C, shift after AEC Q100 grade 0 qualifica-
ΔETOT(LIFE) –1.9 ±0.6 1.9 %
Lifetime3 tion testing
1See Characteristic Performance Data page for parameter distributions over temperature range.
2This parameter may drift a maximum of ΔSensLIFE over lifetime.
3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot
be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
4±3 sigma noise voltage.
5Drift is referred to ideal V
IOUT(QBI) = 2.5 V.
6This parameter may drift a maximum of ΔV
OE(LIFE) over lifetime.
7This parameter may drift a maximum of ΔE
TOT(LIFE) over lifetime.
X050U PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 150°C, CBYP = 0.1 μF, VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP 0 – 50 A
SensTA Measured using full scale IP , TA = 25°C 78.08 80 81.92 mV/A
Sensitivity2 Sens(TOP)HT Measured using full scale IP , TOP = 25°C to 150°C 78.08 80 81.92 mV/A
Sens(TOP)LT Measured using full scale IP , TOP = –40°C to 25°C 77.2 80 82.8 mV/A
TOP = –40°C to 150°C, shift after AEC Q100 grade 0 qualifica-
Sensitivity Drift Over Lifetime3 ΔSensLIFE –1.44 ±0.48 1.44 mV/A
tion testing
Noise4 VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 20 – mV
Nonlinearity ELIN Measured using full scale and half scale IP –1 – 1 %
VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV
Electrical Offset Voltage5,6 VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C –10 ±6 10 mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV
Electrical Offset Voltage Drift IP = 0 A, TOP = –40°C to 150°C, shift after AEC Q100 grade 0
∆VOE(LIFE) –5 ±2 5 mV
Over Lifetime3 qualification testing
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 50 A – 120 300 mA
ETOT(TA) Measured using full scale IP , TA = 25°C –2.4 ±0.5 2.4 %
Total Output Error7 ETOT(HT) Measured using full scale IP , TOP = 25°C to 150°C –2.4 ±1.5 2.4 %
ETOT(LT) Measured using full scale IP , TOP = –40°C to 25°C –3.5 ±2 3.5 %
Total Output Error Drift Over TOP = –40°C to 150°C, shift after AEC Q100 grade 0 qualifica-
ΔETOT(LIFE) –1.9 ±0.6 1.9 %
Lifetime3 tion testing
1See Characteristic Performance Data page for parameter distributions over temperature range.
2This parameter may drift a maximum of ΔSensLIFE over lifetime.
3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot
be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
4±3 sigma noise voltage.
5Drift is referred to ideal V
IOUT(QBI) = 0.5 V.
6This parameter may drift a maximum of ΔV
OE(LIFE) over lifetime.
7This parameter may drift a maximum of ΔE
TOT(LIFE) over lifetime.
X100B PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 150°C, CBYP = 0.1 μF, VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP –100 – 100 A
SensTA Measured using full scale IP , TA = 25°C 19.52 20 20.48 mV/A
Sensitivity2 Sens(TOP)HT Measured using full scale IP , TOP = 25°C to 150°C 19.52 20 20.48 mV/A
Sens(TOP)LT Measured using full scale IP , TOP = –40°C to 25°C 19.3 20 20.7 mV/A
TOP = –40°C to 150°C, shift after AEC Q100 grade 0 qualifica-
Sensitivity Drift Over Lifetime3 ΔSensLIFE –0.36 ±0.12 0.36 mV/A
tion testing
Noise4 VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 6 – mV
Nonlinearity ELIN Measured using full scale and half scale IP –1 – 1 %
VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV
Electrical Offset Voltage5,6 VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C –10 ±6 10 mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV
Electrical Offset Voltage Drift IP = 0 A, TOP = –40°C to 150°C, shift after AEC Q100 grade 0
∆VOE(LIFE) –5 ±2 5 mV
Over Lifetime3 qualification testing
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 100 A – 170 425 mA
ETOT(TA) Measured using full scale IP , TA = 25°C –2.4 ±0.5 2.4 %
Total Output Error7 ETOT(HT) Measured using full scale IP , TOP = 25°C to 150°C –2.4 ±1.5 2.4 %
ETOT(LT) Measured using full scale IP , TOP = –40°C to 25°C –3.5 ±2 3.5 %
Total Output Error Drift Over TOP = –40°C to 150°C, shift after AEC Q100 grade 0 qualifica-
ΔETOT(LIFE) –1.9 ±0.6 1.9 %
Lifetime3 tion testing
1See Characteristic Performance Data page for parameter distributions over temperature range.
2This parameter may drift a maximum of ΔSensLIFE over lifetime.
3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot
be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
4±3 sigma noise voltage.
5Drift is referred to ideal V
IOUT(QBI) = 2.5 V.
6This parameter may drift a maximum of ΔV
OE(LIFE) over lifetime.
7This parameter may drift a maximum of ΔE
TOT(LIFE) over lifetime.
X100U PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 150°C, CBYP = 0.1 μF, VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP 0 – 100 A
SensTA Measured using full scale IP , TA = 25°C 39.04 40 40.96 mV/A
Sensitivity2 Sens(TOP)HT Measured using full scale IP , TOP = 25°C to 150°C 39.04 40 40.96 mV/A
Sens(TOP)LT Measured using full scale IP , TOP = –40°C to 25°C 38.6 40 41.4 mV/A
TOP = –40°C to 150°C, shift after AEC Q100 grade 0 qualifica-
Sensitivity Drift Over Lifetime3 ΔSensLIFE –0.72 ±0.24 0.72 mV/A
tion testing
Noise4 VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 12 – mV
Nonlinearity ELIN Measured using full scale and half scale IP –1 – 1 %
VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV
Electrical Offset Voltage5,6 VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C –10 ±6 10 mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV
Electrical Offset Voltage Drift IP = 0 A, TOP = –40°C to 150°C, shift after AEC Q100 grade 0
∆VOE(LIFE) –5 ±2 5 mV
Over Lifetime3 qualification testing
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 100 A – 170 425 mA
ETOT(TA) Measured using full scale IP , TA = 25°C –2.4 ±0.5 2.4 %
Total Output Error7 ETOT(HT) Measured using full scale IP , TOP = 25°C to 150°C –2.4 ±1.5 2.4 %
ETOT(LT) Measured using full scale IP , TOP = –40°C to 25°C –3.5 ±2 3.5 %
Total Output Error Drift Over TOP = –40°C to 150°C, shift after AEC Q100 grade 0 qualifica-
ΔETOT(LIFE) –1.9 ±0.6 1.9 %
Lifetime3 tion testing
1See Characteristic Performance Data page for parameter distributions over temperature range.
2This parameter may drift a maximum of ΔSensLIFE over lifetime.
3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot
be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
4±3 sigma noise voltage.
5Drift is referred to ideal V
IOUT(QBI) = 0.5 V.
6This parameter may drift a maximum of ΔV
OE(LIFE) over lifetime.
7This parameter may drift a maximum of ΔE
TOT(LIFE) over lifetime.
X150B PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 125°C, CBYP = 0.1 μF, VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP –150 – 150 A
SensTA Measured using full scale IP , TA = 25°C 13.01 13.33 13.65 mV/A
Sensitivity2 Sens(TOP)HT Measured using full scale IP , TOP = 25°C to 150°C 13.01 13.33 13.65 mV/A
Sens(TOP)LT Measured using full scale IP , TOP = –40°C to 25°C 12.86 13.33 13.8 mV/A
TOP = –40°C to 125°C, shift after AEC Q100 grade 0 qualifica-
Sensitivity Drift Over Lifetime3 ΔSensLIFE –0.24 ±0.08 0.24 mV/A
tion testing
Noise4 VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 4 – mV
Nonlinearity ELIN Measured using full scale and half scale IP –1 – 1 %
VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV
Electrical Offset Voltage5,6 VOE(TOP)HT IP = 0 A, TOP = 25°C to 125°C –10 ±6 10 mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV
Electrical Offset Voltage Drift IP = 0 A, TOP = –40°C to 125°C, shift after AEC Q100 grade 0
∆VOE(LIFE) –5 ±2 5 mV
Over Lifetime3 qualification testing
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 150 A – 225 500 mA
ETOT(TA) Measured using full scale IP , TA = 25°C –2.4 ±0.5 2.4 %
Total Output Error7 ETOT(HT) Measured using full scale IP , TOP = 25°C to 150°C –2.4 ±1.5 2.4 %
ETOT(LT) Measured using full scale IP , TOP = –40°C to 25°C –3.5 ±2 3.5 %
Total Output Error Drift Over TOP = –40°C to 125°C, shift after AEC Q100 grade 0 qualifica-
ΔETOT(LIFE) –1.9 ±0.6 1.9 %
Lifetime3 tion testing
1See Characteristic Performance Data page for parameter distributions over temperature range.
2This parameter may drift a maximum of ΔSensLIFE over lifetime.
3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot
be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
4±3 sigma noise voltage.
5Drift is referred to ideal V
IOUT(QBI) = 2.5 V.
6This parameter may drift a maximum of ΔV
OE(LIFE) over lifetime.
7This parameter may drift a maximum of ΔE
TOT(LIFE) over lifetime.
X150U PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 125°C, CBYP = 0.1 μF, VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP 0 – 150 A
SensTA Measured using full scale IP , TA = 25°C 26.02 26.66 27.30 mV/A
Sensitivity2 Sens(TOP)HT Measured using full scale IP , TOP = 25°C to 150°C 26.02 26.66 27.30 mV/A
Sens(TOP)LT Measured using full scale IP , TOP = –40°C to 25°C 25.73 26.66 27.59 mV/A
TOP = –40°C to 125°C, shift after AEC Q100 grade 0 qualifica-
Sensitivity Drift Over Lifetime3 ΔSensLIFE –0.48 ±0.16 0.48 mV/A
tion testing
Noise4 VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 6 – mV
Nonlinearity ELIN Measured using full scale and half scale IP –1 – 1 %
VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV
Electrical Offset Voltage5,6 VOE(TOP)HT IP = 0 A, TOP = 25°C to 125°C –10 ±6 10 mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV
Electrical Offset Voltage Drift IP = 0 A, TOP = –40°C to 125°C, shift after AEC Q100 grade 0
∆VOE(LIFE) –5 ±2 5 mV
Over Lifetime3 qualification testing
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 150 A – 225 500 mA
ETOT(TA) Measured using full scale IP , TA = 25°C –2.4 ±0.5 2.4 %
Total Output Error7 ETOT(HT) Measured using full scale IP , TOP = 25°C to 150°C –2.4 ±1.5 2.4 %
ETOT(LT) Measured using full scale IP , TOP = –40°C to 25°C –3.5 ±2 3.5 %
Total Output Error Drift Over TOP = –40°C to 125°C, shift after AEC Q100 grade 0 qualifica-
ΔETOT(LIFE) –1.9 ±0.6 1.9 %
Lifetime3 tion testing
1See Characteristic Performance Data page for parameter distributions over temperature range.
2This parameter may drift a maximum of ΔSensLIFE over lifetime.
3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot
be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
4±3 sigma noise voltage.
5Drift is referred to ideal V
IOUT(QBI) = 0.5 V.
6This parameter may drift a maximum of ΔV
OE(LIFE) over lifetime.
7This parameter may drift a maximum of ΔE
TOT(LIFE) over lifetime.
X200B PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 85°C, CBYP = 0.1 μF, VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP –200 – 200 A
SensTA Measured using full scale IP , TA = 25°C 9.76 10 10.24 mV/A
Sensitivity2 Sens(TOP)HT Measured using full scale IP , TOP = 25°C to 150°C 9.76 10 10.24 mV/A
Sens(TOP)LT Measured using full scale IP , TOP = –40°C to 25°C 9.65 10 10.35 mV/A
TOP = –40°C to 85°C, shift after AEC Q100 grade 0 qualifica-
Sensitivity Drift Over Lifetime3 ΔSensLIFE –0.18 ±0.06 0.18 mV/A
tion testing
Noise4 VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 3 – mV
Nonlinearity ELIN Measured using full scale and half scale IP –1 – 1 %
VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV
Electrical Offset Voltage5,6 VOE(TOP)HT IP = 0 A, TOP = 25°C to 85°C –10 ±6 10 mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV
Electrical Offset Voltage Drift IP = 0 A, TOP = –40°C to 85°C, shift after AEC Q100 grade 0
∆VOE(LIFE) –5 ±2 5 mV
Over Lifetime3 qualification testing
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 200 A – 250 575 mA
ETOT(TA) Measured using full scale IP , TA = 25°C –2.4 ±0.5 2.4 %
Total Output Error7 ETOT(HT) Measured using full scale IP , TOP = 25°C to 150°C –2.4 ±1.5 2.4 %
ETOT(LT) Measured using full scale IP , TOP = –40°C to 25°C –3.5 ±2 3.5 %
Total Output Error Drift Over TOP = –40°C to 85°C, shift after AEC Q100 grade 0 qualifica-
ΔETOT(LIFE) –1.9 ±0.6 1.9 %
Lifetime3 tion testing
1See Characteristic Performance Data page for parameter distributions over temperature range.
2This parameter may drift a maximum of ΔSensLIFE over lifetime.
3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot
be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
4±3 sigma noise voltage.
5Drift is referred to ideal V
IOUT(QBI) = 2.5 V.
6This parameter may drift a maximum of ΔV
OE(LIFE) over lifetime.
7This parameter may drift a maximum of ΔE
TOT(LIFE) over lifetime.
X200U PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 85°C, CBYP = 0.1 μF, VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP 0 – 200 A
SensTA Measured using full scale IP , TA = 25°C 19.52 20 20.48 mV/A
Sensitivity2 Sens(TOP)HT Measured using full scale IP , TOP = 25°C to 150°C 19.52 20 20.48 mV/A
Sens(TOP)LT Measured using full scale IP , TOP = –40°C to 25°C 19.3 20 20.7 mV/A
TOP = –40°C to 85°C, shift after AEC Q100 grade 0 qualifica-
Sensitivity Drift Over Lifetime3 ΔSensLIFE –0.36 ±0.12 0.36 mV/A
tion testing
Noise4 VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 6 – mV
Nonlinearity ELIN Measured using full scale and half scale IP –1 – 1 %
VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV
Electrical Offset Voltage5,6 VOE(TOP)HT IP = 0 A, TOP = 25°C to 85°C –10 ±6 10 mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV
Electrical Offset Voltage Drift IP = 0 A, TOP = –40°C to 85°C, shift after AEC Q100 grade 0
∆VOE(LIFE) –5 ±2 5 mV
Over Lifetime3 qualification testing
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 200 A – 250 575 mA
ETOT(TA) Measured using full scale IP , TA = 25°C –2.4 ±0.5 2.4 %
Total Output Error7 ETOT(HT) Measured using full scale IP , TOP = 25°C to 150°C –2.4 ±1.5 2.4 %
ETOT(LT) Measured using full scale IP , TOP = –40°C to 25°C –3.5 ±2 3.5 %
Total Output Error Drift Over TOP = –40°C to 85°C, shift after AEC Q100 grade 0 qualifica-
ΔETOT(LIFE) –1.9 ±0.6 1.9 %
Lifetime3 tion testing
1See Characteristic Performance Data page for parameter distributions over temperature range.
2This parameter may drift a maximum of ΔSensLIFE over lifetime.
3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot
be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
4±3 sigma noise voltage.
5Drift is referred to ideal V
IOUT(QBI) = 0.5 V.
6This parameter may drift a maximum of ΔV
OE(LIFE) over lifetime.
7This parameter may drift a maximum of ΔE
TOT(LIFE) over lifetime.
Accuracy Data
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
6 41.0
4 40.8
40.6
Sens (mV/A)
2
40.4
VOE (mV)
0
40.2
-2
40.0
-4 39.8
-6 39.6
-8 39.4
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
Nonlinearity versus Ambient Temperature Magnetic Offset Error versus Ambient Temperature
0 250
-0.1
-0.2 200
-0.3
ELIN (%)
IERROM (mA)
150
-0.4
-0.5
100
-0.6
-0.7
50
-0.8
-0.9 0
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
0.5
0
-0.5
-1.0
-1.5
–50 -25 0 25 50 75 100 125 150
TA (°C)
Accuracy Data
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
8 20.4
6 20.3
4 20.2
Sens (mV/A)
2 20.1
VOE (mV)
0 20.0
-2 19.9
-4 19.8
-6 19.7
-8 19.6
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
Nonlinearity versus Ambient Temperature Magnetic Offset Error versus Ambient Temperature
0 400
-0.1 350
300
-0.2
250
ELIN (%)
IERROM (mA)
-0.3
200
-0.4
150
-0.5
100
-0.6
50
-0.7 0
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
0
-0.5
-1.0
-1.5
-2.0
–50 -25 0 25 50 75 100 125 150
TA (°C)
Accuracy Data
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
8 13.60
6 13.55
13.50
Sens (mV/A)
4 13.45
VOE (mV)
2 13.40
13.35
0 13.30
-2 13.25
13.20
-4
13.15
-6 13.10
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
Nonlinearity versus Ambient Temperature Magnetic Offset Error versus Ambient Temperature
0 450
-0.1 400
-0.2 350
300
-0.3
ELIN (%)
IERROM (mA)
250
-0.4
200
-0.5
150
-0.6
100
-0.7 50
-0.8 0
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
0
-0.5
-1.0
-1.5
-2.0
–50 -25 0 25 50 75 100 125 150
TA (°C)
Accuracy Data
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
6 10.15
4 10.10
Sens (mV/A)
10.05
2
VOE (mV)
10.00
0
9.95
-2
9.90
-4 9.85
-6 9.80
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
Nonlinearity versus Ambient Temperature Magnetic Offset Error versus Ambient Temperature
0 600
-0.1 500
-0.2 400
ELIN (%)
IERROM (mA)
-0.3 300
-0.4 200
-0.5 100
-0.6 0
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
1.0
0.5
0
ETOT (%)
-0.5
-1.0
-1.5
-2.0
–50 -25 0 25 50 75 100 125 150
TA (°C)
Response Time
IP = 60 A , 10% to 90% rise time = 1 µs, CBYPASS = 0.1 µF, CL = 0.47 nF
IP = 60 A
VIOUT
80% of input
80% of output
tRESPONSE = 4.56 µs
Rise Time
IP = 60 A , 10% to 90% rise time = 1 µs, CBYPASS = 0.1 µF, CL = 0.47 nF
IP = 60 A
VIOUT
90% of output
tr = 4.1 µs
10% of output
Propagation Time
IP = 60 A , 10% to 90% rise time = 1 µs, CBYPASS = 0.1 µF, CL = 0.47 nF
IP = 60 A
VIOUT
tPROP = 2.4 µs
Power-On Delay
IP = 60 A DC, CBYPASS = Open, CL = 0.47 nF
VCC
VCC (min)
tPOD = 88 µs
90% of output
VIOUT
tUVLOE = 75.3 µs
VCC
VUVLOL
VIOUT
VIOUT = 0 V
tUVLOD = 13.9 µs
VCC
VCC (min)
VIOUT
90% of output
Characteristic Definitions
Sensitivity (Sens). The change in device output in response to a and the ratiometric change (%) in sensitivity is defined as:
1 A change through the primary conductor. The sensitivity is the Sens(VCC) Sens(5V)
product of the magnetic circuit sensitivity (G / A) and the linear ∆Sens(∆V) = × 100 (%)
IC amplifier gain (mV/G). The linear IC amplifier gain is pro- VCC 5V
grammed at the factory to optimize the sensitivity (mV/A) for the
Quiescent output voltage (VIOUT(Q)). The output of the device
half-scale current of the device.
when the primary current is zero. For bidirectional current flow,
Noise (VNOISE). The noise floor is derived from the thermal and it nominally remains at VCC ⁄ 2. Thus, VCC = 5 V translates into
shot noise observed in Hall elements. Dividing the noise (mV) VIOUT(QBI) = 2.5 V. For unidirectional devices, when VCC = 5 V,
by the sensitivity (mV/A) provides the smallest current that the VIOUT(QUNI) = 0.5 V. Variation in VIOUT(Q) can be attributed to
device is able to resolve. the resolution of the Allegro linear IC quiescent voltage trim,
magnetic hysteresis, and thermal drift.
Nonlinearity (ELIN). The ACS770 is designed to provide a linear
output in response to a ramping current. Consider two current Electrical offset voltage (VOE). The deviation of the device
output from its ideal quiescent value of VCC ⁄ 2 for bidirectional
levels, I1 and I2. Ideally, the sensitivity of a device is the same
sensor ICs and 0.5 V for unidirectional sensor ICs, due to non-
for both currents, for a given supply voltage and temperature. magnetic causes.
Nonlinearity is present when there is a difference between the
Magnetic offset error (IERROM). The magnetic offset is due to
sensitivities measured at I1 and I2. Nonlinearity is calculated
the residual magnetism (remnant field) of the core material. The
separately for the positive (ELINpos ) and negative (ELINneg ) magnetic offset error is highest when the magnetic circuit has
applied currents as follows: been saturated, usually when the device has been subjected to a
full-scale or high-current overload condition. The magnetic offset
ELINpos = 100 (%) × {1 – (SensIPOS2 / SensIPOS1 ) } is largely dependent on the material used as a flux concentrator.
Total Output Error (ETOT). The maximum deviation of the
ELINneg = 100 (%) × {1 – (SensINEG2 / SensINEG1 )} actual output from its ideal value, also referred to as accuracy,
illustrated graphically in the output voltage versus current chart
where: on the following page.
SensIx = (VIOUT(Ix) – VIOUT(Q))/ Ix ETOT is divided into four areas:
and IPOSx and INEGx are positive and negative currents. • 0 A at 25°C. Accuracy at the zero current flow at 25°C, with-
out the effects of temperature.
Then:
• 0 A over Δ temperature. Accuracy at the zero current flow
ELIN = max( ELINpos , ELINneg ) including temperature effects.
Ratiometry. The device features a ratiometric output. This • Full-scale current at 25°C. Accuracy at the full-scale current at
25°C, without the effects of temperature.
means that the quiescent voltage output, VIOUTQ, and the mag-
• Full-scale current over Δ temperature. Accuracy at the full-
netic sensitivity, Sens, are proportional to the supply voltage, VCC.
scale current flow including temperature effects.
The ratiometric change (%) in the quiescent voltage output is
defined as: VIOUT(IP) – VIOUT_IDEAL(IP)
ETOT(IP) = × 100 (%)
VIOUTQ(VCC) VIOUTQ(5V) SensIDEAL × IP
∆VIOUTQ(∆V) = × 100 (%) where
VCC 5V
VIOUT_IDEAL(IP) = VIOUT(Q) + (SensIDEAL × IP )
Rise Time (tr). The time interval between a) when the device
reaches 10% of its full scale value, and b) when it reaches 90%
of its full scale value. Both tr and tRESPONSE are detrimentally
affected by eddy current losses observed in the conductive IC
ground plane.
Output Voltage versus Sampled Current
Response Time (tRESPONSE) The time interval between a) when Total Output Error at 0 A and at Full-Scale Current
the applied current reaches 80% of its final value, and b)
when the sensor reaches 80% of its output corresponding to the Accuracy
Over ∆Temp erature
Increasing VIOUT(V)
applied current.
Accuracy
25°C Only
Propagation Delay (tPROP). The time interval between a) when
the input current reaches 20% of its final value, and b) when the Average
VIOUT
Accuracy
25°C Only
IP(min)
Half Scale
IP(max)
90
Transducer Output 0A
Decreasing VIOUT(V)
Rise Time, tr
Accuracy
20 25°C Only
10
0 Accuracy
Over ∆Temp erature
Propagation Delay, tPROP t
Power-On Reset Voltage (VPOR ) At power-up, to initialize to a Undervoltage Lockout Threshold (VUVLO ) If VCC drops below
known state and avoid current spikes, the ACS770 is held in Reset VUVLOL , output voltage will be locked to GND. If VCC starts
state. The Reset signal is disabled when VCC reaches VUVLOH and rising, the ACS770 will come out of the locked state when VCC
time tPORR has elapsed, allowing output voltage to go from a high reaches VUVLOH .
impedance state into normal operation. During power-down, the
Reset signal is enabled when VCC reaches VPORL , causing output UVLO Enable/Disable Delay Time (tUVLO ) When a falling VCC
voltage to go into a high impedance state. (Note that a detailed reaches VUVLOL , time tUVLOE is required to engage Undervoltage
description of POR and UVLO operation can be found in the Lockout state. When VCC rises above VUVLOH , time tUVLOD is
Functional Description section.) required to disable UVLO and have a valid output voltage.
Power-On Reset Release Time (tPORR) When VCC rises to
VPORH , the Power-On Reset Counter starts. The ACS770 output
voltage will transition from a high impedance state to normal
operation only when the Power-On Reset Counter has reached
tPORR and VCC has exceeded VUVLOH .
Functional Description
VCC
1 2 3 5 6 7 9 10 11
4 8
5.0
VUVLOH
VUVLOL
VPORH
VPORL
tUVLOE tUVLOE
GND
Time
VOUT Slope =
VCC / 2
2.5
tPORR
tUVLOD tUVLOD
GND
High Impedance High Impedance Time
VCC
1’ 2’ 4’ 5’ 6’ 7’
3’
5.0
VUVLOH
VUVLOL
VPORH
VPORL < tUVLOE
GND
Time
VOUT
tPORR < tUVLOE
Slope = Slope =
VCC / 2 VCC / 2
2.5
tUVLOD
GND
High Impedance High Impedance Time
Regulator
Clock/Logic
Hall Element
Amp
Anti-Aliasing Tuned
LP Filter Filter
14.0±0.2 ∅ 0.5 B
R2 4
1.50±0.10
3.0±0.2 4.0±0.2
5 4 1º±2° 3 21.4
A
3.5±0.2
∅ 0.8
∅ 1.5
17.5±0.2
13.00±0.10
1.91
2.9±0.2 NNNNNNN
5º±5° TTT - AAA
1 2 3 +0.060
0.381 –0.030
10.00±0.10
3.5±0.2
LLLLLLL
YYWW
1
7.00±0.10
C Standard Branding Reference View
N = Device part number
T = Temperature code
A = Amperage range
L = Lot number
0.51±0.10 Y = Last two digits of year of manufacture
W = Week of manufacture
1.9±0.2
= Supplier emblem
For Reference Only; not for tooling use (reference DWG-9111, DWG-9110)
Dimensions in millimeters
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
A
2.75±0.10
23.50±0.5 NNNNNNN
TTT - AAA
13.00±0.10
LLLLLLL
4.40±0.10 YYWW
Branded
Face 1
2.9±0.2
5º±5° B Standard Branding Reference View
For Reference Only; not for tooling use (reference DWG-9111, DWG-9110)
7.00±0.10 Dimensions in millimeters
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
Revision History
Revision Revision Date Description of Revision
1 December 8, 2014 Revised Selection Guide