STW19NM60N

Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II

Power MOSFET in a TO-247 package
Datasheet - production data

Features
VDS RDS(on)
Order code ID PTOT
(@Tjmax) max.
STW19NM60N 650 V 0.285 Ω 13 A 110 W

• Designed for automotive applications and

2
3 AEC-Q101 qualified
1
• 100% avalanche tested
TO-247 • Low input capacitance and gate charge
• Low gate input resistance

Applications
Figure 1. Internal schematic diagram
• Switching applications

$ 4!"
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
' MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
3 efficiency converters.

!-V

Table 1. Device summary

Order codes Marking Package Packaging

STW19NM60N 19NM60N TO-247 Tube

October 2013 DocID024392 Rev 2 1/13

This is information on a product in full production. www.st.com 13
Contents STW19NM60N

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................... 6

3 Test circuits ............................................... 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/13 DocID024392 Rev 2

STW19NM60N Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 600 V

VGS Gate- source voltage ± 25
ID Drain current (continuous) at TC = 25 °C 13 A
ID Drain current (continuous) at TC = 100 °C 8.2 A
(1)
IDM Drain current (pulsed) 52 A
PTOT Total dissipation at TC = 25 °C 110 W
Avalanche current, repetitive or not-repetitive
IAR 4 A
(pulse width limited by TJ max)
Single pulse avalanche energy
EAS 350 mJ
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
dv/dt(2) Peak diode recovery voltage slope 15 V/ns
TJ Operating junction temperature °C
-55 to 150
Tstg Storage temperature °C
1. Pulse width limited by safe operating area.
2. ISD ≤ 13 A, di/dt ≤ 400 A/µs, VDD ≤ 80 % V (BR)DSS, VDS(peak) ≤ V(BR)DSS

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 1.14 °C/W

Rthj-amb Thermal resistance junction-amb max 50 °C/W

DocID024392 Rev 2 3/13

Electrical characteristics STW19NM60N

2 Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 1 mA, VGS= 0 600 V
voltage

Zero gate voltage drain VDS = 600 V 1 µA

IDSS
current (VGS = 0) VDS = 600 V, TJ=125 °C 10 µA
Gate body leakage current
IGSS VGS = ±25 V ±100 nA
(VDS = 0)
VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2 3 4 V
Static drain-source on-
RDS(on) VGS= 10 V, ID=6.5 A 0.260 0.285 Ω
resistance

Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 1000 - pF

Coss Output capacitance VDS = 50 V, f =1 MHz, - 60 - pF
VGS = 0
Reverse transfer
Crss - 3 - pF
capacitance
Output equivalent
Coss eq.(1) VDS = 0, to 480 V, VGS=0 - 225 - pF
capacitance
Rg Intrinsic resistance f=1 MHz open drain - 3.5 - Ω
Qg Total gate charge VDD = 480 V, ID = 13 A - 35 - nC
Qgs Gate-source charge VGS = 10 V - 6 - nC
Qgd Gate-drain charge (see Figure 15) - 20 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.

4/13 DocID024392 Rev 2

STW19NM60N Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 12 - ns

VDD = 300 V, ID = 6.5 A,
tr Rise time - 15 - ns
RG = 4.7 Ω, VGS = 10 V
td(off) Turn-off delay time (see Figure 14) - 55 - ns
tf Fall time - 25 - ns

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 13 A

ISDM (1) Source-drain current (pulsed) - 52 A
(2)
VSD Forward on voltage ISD = 13 A, VGS=0 - 1.6 V
trr Reverse recovery time - 300 ns
ISD =13 A, di/dt =100 A/µs,
Qrr Reverse recovery charge VDD = 60 V - 4.0 µC
(see Figure 16)
IRRM Reverse recovery current - 25 A
trr Reverse recovery time - 360 ns
VDD = 60 V
Qrr Reverse recovery charge di/dt =100 A/µs, ISD = 13 A - 4.5 µC
Tj = 150°C (see Figure 16)
IRRM Reverse recovery current - 25 A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

DocID024392 Rev 2 5/13

Electrical characteristics STW19NM60N

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance
AM05527v1
ID
(A)
is
a
n)
R e

10
ax a r
(o

10µs
DS
m is
by in th

100µs
ite tion
Lim era
d
Op

1ms
1 Tj=150°C
Tc=25°C 10ms
Sinlge
pulse
0.1
0.1 1 10 100 VDS(V)

Figure 4. Output characteristics Figure 5. Transfer characteristics

AM05528v1 AM05529v1
ID ID
(A) VGS=10V (A)
7V VDS=19V

24 24
6V
20 20

16 16

12 12
5V
8 8

4 4

0 4V 0
0 4 8 12 16 20 VDS(V) 0 2 4 6 8 10 VGS(V)

Figure 6. Static drain-source on-resistance Figure 7. Gate charge vs gate-source voltage

RDS(on) AM05530v1 AM05531v1
VGS
(Ω) VDS
(V)
VDD=480V (V)
0.28 12
VGS = 10 V ID=13A 500
0.27
10
0.26 400
VDS
0.25 8
300
0.24 6
0.23 200
4
0.22
2 100
0.21
0.20 0 0
0 2 4 6 8 10 12 ID(A) 0 10 20 30 40 Qg(nC)

6/13 DocID024392 Rev 2

STW19NM60N Electrical characteristics

Figure 8. Capacitance variations Figure 9. Output capacitance stored energy

AM05532v1 AM05533v1
C Eoss
(pF) (µJ)
7

1000 Ciss 6

100 4

Coss 3

10 2

Crss 1
1 0
0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V)

Figure 10. Normalized gate threshold voltage vs Figure 11. Normalized on-resistance vs
temperature temperature
VGS(th) AM05534v2 AM05535v2
(norm) RDS(on)
ID = 250 µA (norm)

1.2 2.5 VGS = 10 V

1.0
2.0
0.8
1.5
0.6
1.0
0.4

0.2 0.5

0 0
-50 -25 0 25 50 75 100 125 TJ(°C) -50 -25 0 25 50 75 100 125 TJ(°C)

Figure 12. Normalized VDS vs temperature Figure 13. Source-drain diode forward vs
temperature
AM09028v2 AM14768v1
VDS VSD
(norm)
ID=1mA (V)
1.10 1.4
TJ=-50°C
1.2
1.05
1.0 TJ=25°C
1.00
0.8
0.95
0.6 TJ=150°C
0.90
0.4
0.85 0.2
0.80 0
-50 -25 0 25 50 75 100 125 TJ(°C) 0 2 4 6 8 10 12 ISD(A)

DocID024392 Rev 2 7/13

Test circuits STW19NM60N

3 Test circuits

Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. μF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test circuit
switching and diode recovery times

L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
V(BR)DSS ton toff
tr tdoff tf
VD tdon

90% 90%
IDM
10%
ID 10% VDS
0

VDD VDD 90%

VGS

AM01472v1 0 10% AM01473v1

8/13 DocID024392 Rev 2

STW19NM60N Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

DocID024392 Rev 2 9/13

Package mechanical data STW19NM60N

Table 8. TO-247 mechanical data

mm.
Dim.
Min. Typ. Max.

A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70

10/13 DocID024392 Rev 2

STW19NM60N Package mechanical data

Figure 20. TO-247 drawing

0075325_G

DocID024392 Rev 2 11/13

Revision history STW19NM60N

5 Revision history

Table 9. Document revision history

Date Revision Changes

21-Mar-2013 1 Initial release.

– Modified: title, features and applications
24-Oct-2013 2
– Minor text changes

12/13 DocID024392 Rev 2

STW19NM60N

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