STP15810

N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7

Power MOSFET in a TO-220 package
Datasheet - production data

Features
Order code VDS RDS(on)max ID PTOT
TAB
STP15810 100 V 0.0042 Ω 110 A 250 W

• 100% avalanche tested

3 • Ultra low on-resistance
2
1

TO-220 Applications
• Switching applications

Description
Figure 1. Internal schematic diagram This N-channel Power MOSFETs utilizes
STripFET™ F7 technology with an enhanced
'7$%
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.

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6

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Table 1. Device summary

Order code Marking Package Packaging

STP15810 15810 TO-220 Tube

August 2014 DocID024972 Rev 4 1/13

This is information on a product in full production. www.st.com
Contents STP15810

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuits .............................................. 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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STP15810 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 100 V

VGS Gate- source voltage ±20 V
ID Drain current (continuous) at TC = 25 °C 110 A
ID Drain current (continuous) at TC = 100 °C 110 A
(1)
IDM Drain current (pulsed) TC = 25 °C 440 A
PTOT Total dissipation at TC = 25 °C 250 W
EAS (2) Single pulse avalanche energy 495 mJ
TJ Operating junction temperature °C
-55 to 175
Tstg Storage temperature °C
1. Pulse width is limited by safe operating area
2. Starting Tj=25 °C, ID=30 A, VDD=50 V

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 0.6 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W

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Electrical characteristics STP15810

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS VGS = 0, ID = 250 µA 100 V
breakdown voltage
VGS = 0, VDS = 100 V 1 µA
Zero gate voltage
IDSS VGS = 0,
drain current 100 µA
VDS = 100 V, TC=125 °C
Gate-body leakage
IGSS VDS = 0, VGS = +20 V 100 nA
current
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 4.5 V
Static drain-source on-
RDS(on) VGS = 10 V, ID = 55 A 0.0036 0.0042 Ω
resistance

Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 8115 - pF

Coss Output capacitance VDS = 55 V, f = 1 MHz, - 1510 - pF
VGS = 0
Crss Reverse transfer
- 67 - pF
capacitance
Qg Total gate charge VDD = 55 V, ID = 90 A, - 117 - nC
Qgs Gate-source charge VGS = 10 V - 47 - nC
Qgd Gate-drain charge (see Figure 14) - 26 - nC

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 33 - ns

VDD = 50 V, ID = 55 A,
tr Rise time - 57 - ns
RG = 4.7 Ω, VGS = 10 V
td(off) Turn-off delay time - 72 - ns
(see Figure 13)
tf Fall time - 33 - ns

4/13 DocID024972 Rev 4

STP15810 Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 110 A

ISDM (1)
Source-drain current (pulsed) - 440 A
VSD (2) Forward on voltage ISD = 110 A, VGS = 0 - 1.2 V
trr Reverse recovery time - 70 ns
ISD = 110 A, di/dt = 100 A/µs
Qrr Reverse recovery charge VDD = 80 V, TJ=150 °C - 165 nC
(see Figure 15)
IRRM Reverse recovery current - 4.7 A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

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13
Electrical characteristics STP15810

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance
AM18051v1 AM18052v1
ID K
(A) δ=0.5

100 0.2

ea
is 0.1
a r (on)
th
is
RD
S
0.05
in ax
10 n
tio by m
10 -1
ra 100µs
pe ited
O m 0.02
Li c
0.01

1 1ms
Single pulse
Tj=175°C
Tc=25°C
10ms
Single pulse
0.1 10 -2
0.1 1 10 VDS(V) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 tp(s)

Figure 4. Output characteristics Figure 5. Transfer characteristics

AM18042v1 AM18043v1
ID (A) ID
VGS=10V (A)
400 VDS=4V
8V 300
350
7V 250
300

250 200

200 150
6V
150
100
100

50 50
5V
0 0
0 2 4 6 8 VDS(V) 0 2 4 6 8 VGS(V)

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

AM18044v1 AM18054v1
VGS RDS(on)
(V) (mΩ)
VDD=50V VGS=10V
12
ID=110A
3.62
10
3.61
8 3.60

6 3.59
3.58
4
3.57
2 3.56

0 3.55
0 40 80 120 Qg(nC) 0 20 40 60 80 100 ID(A)

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STP15810 Electrical characteristics

Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs

temperature
AM18046v1 VGS(th) AM18047v1
C
(pF) (norm)
1.1 ID=250µA
8000 Ciss
1
7000
6000 0.9

5000 0.8
4000 0.7
3000
0.6
2000
0.5
1000
Coss
0 Crss 0.4
0 20 40 60 80 100 VDS(V) -75 -25 25 75 125 TJ(°C)

Figure 10. Normalized on-resistance vs Figure 11. Normalized VDS vs temperature

temperature
AM18048v1 AM18049v1
RDS(on) VDS
(norm) (norm)
2 ID=55A 1.04 ID=1mA
1.8 1.03
1.6 1.02
1.4 1.01
1.2 1

1 0.99

0.8 0.98
0.6 0.97
0.4 0.96
-75 -25 25 75 125 TJ(°C) -75 -25 25 75 125 TJ(°C)

Figure 12. Source-drain diode forward

characteristics
AM18055v1
VSD (V)

1 TJ=-55°C

0.9
TJ=25°C
0.8

0.7
TJ=175°C
0.6

0.5

0.4

0.3
0 20 40 60 80 100 ISD(A)

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13
Test circuits STP15810

3 Test circuits

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. μF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test circuit
switching and diode recovery times

L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
V(BR)DSS ton toff
tr tdoff tf
VD tdon

90% 90%
IDM
10%
ID 10% VDS
0

VDD VDD 90%

VGS

AM01472v1 0 10% AM01473v1

8/13 DocID024972 Rev 4

STP15810 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

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13
Package mechanical data STP15810

Figure 19. TO-220 type A drawing

BW\SH$B5HYB7

10/13 DocID024972 Rev 4

STP15810 Package mechanical data

Table 8. TO-220 type A mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95

DocID024972 Rev 4 11/13

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Revision history STP15810

5 Revision history

Table 9. Document revision history

Date Revision Changes

10-Jul-2013 1 First release.

– The part number STH15810-2 has been moved to a separate
datasheet
– Modified: Figure 1
– Modified: ID and IDM values in Table 2
– Modified: Rthj-case value in Table 3
21-Jan-2013 2 – Modified: RDS(on) values in Table 4
– Modified: VSD, ID and the entire typical values in Table 5, 6 and 7
– Updated: Figure 13, 14, 15 and 16
– Updated: Section 4: Package mechanical data
– Added: Section 2.1: Electrical characteristics (curves)
– Minor text changes
– Document status promoted from preliminary data to production
data
29-Jan-2013 3 – Modified: title
– Modified: RDS(on) typical value in Table 4
– Minor text changes
Updated title in cover page.
20-Aug-2014 4
Added EAS parameter in Table 2: Absolute maximum ratings.

12/13 DocID024972 Rev 4

STP15810

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