STW48NM60N

N-channel 600 V, 0.055 Ω typ., 44 A MDmesh™ II Power MOSFET

in a TO-247 package
Datasheet — production data

Features
VDSS @ RDS(on)
Order codes ID
TJmax max
STW48NM60N 650 V < 0.07 Ω 44 A

■ 100% avalanche tested 3

2
■ Low input capacitance and gate charge 1

■ Low gate input resistance

TO-247

Applications
■ Switching applications
Figure 1. Internal schematic diagram
Description
'
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s *
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
6

$0Y

Table 1. Device summary

Order code Marking Package Packaging

STW48NM60N 48NM60N TO-247 Tube

February 2013 Doc ID 18313 Rev 5 1/13

This is information on a product in full production. www.st.com 13
Contents STW48NM60N

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................... 6

3 Test circuits .............................................. 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/13 Doc ID 18313 Rev 5

STW48NM60N Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 600 V

VGS Gate-source voltage ± 25 V
ID Drain current (continuous) at TC = 25 °C 44 A
ID Drain current (continuous) at TC = 100 °C 28 A
IDM (1)
Drain current (pulsed) 176 A
PTOT Total dissipation at TC = 25 °C 330 W
Avalanche current, repetitive or not-
IAS 8 A
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
EAS 457 mJ
(starting TJ=25 °C, ID=IAS, VDD=50 V)
dv/dt (2) Peak diode recovery voltage slope 15 V/ns
Tstg Storage temperature - 55 to 150 °C
Tj Max. operating junction temperature 150 °C
1. Pulse width limited by safe operating area
2. ISD ≤ 44 A, di/dt ≤ 400 A/μs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 0.38 °C/W

Rthj-amb Thermal resistance junction-ambient max 50 °C/W
Maximum lead temperature for soldering
Tl 300 °C
purpose

Doc ID 18313 Rev 5 3/13

Electrical characteristics STW48NM60N

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 1 mA 600 V
voltage (VGS = 0)
Zero gate voltage VDS = 600 V 1 μA
IDSS
drain current (VGS = 0) VDS = 600 V, Tc=125 °C 100 μA
Gate-body leakage
IGSS VGS = ± 25 V ±100 nA
current (VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 2 3 4 V
Static drain-source on-
RDS(on) VGS = 10 V, ID = 20 A 0.055 0.07 Ω
resistance

Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Input capacitance
Ciss 4285 pF
Output capacitance VDS = 50 V, f = 1 MHz,
Coss - 212 - pF
Reverse transfer VGS = 0
Crss 9.5 pF
capacitance
Equivalent output
Coss eq. (1) VGS = 0, VDS = 0 to 480 V - 600 - pF
capacitance
Rg Intrinsic gate resistance f = 1 MHz, VGS = 0 1.6 Ω
Qg Total gate charge VDD = 480 V, ID = 44 A, 124 nC
Qgs Gate-source charge VGS = 10 V, - 20 - nC
Qgd Gate-drain charge (see Figure 15) 61.5 nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time 99 ns

VDD = 300 V, ID = 20 A
tr Rise time 18 ns
RG = 4.7 Ω VGS = 10 V - -
td(off) Turn-off delay time 214 ns
(see Figure 14)
tf Fall time 25.5 ns

4/13 Doc ID 18313 Rev 5

STW48NM60N Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current 44 A

-
ISDM (1) Source-drain current (pulsed) 176 A
VSD (2) Forward on voltage ISD = 44 A, VGS = 0 - 1.6 V
trr Reverse recovery time ISD = 44 A, di/dt = 100 A/μs 472 ns
Qrr Reverse recovery charge VDD = 100 V - 10.5 μC
IRRM Reverse recovery current (see Figure 16) 44.5 A
trr Reverse recovery time ISD = 44 A, di/dt = 100 A/μs 568 ns
Qrr Reverse recovery charge VDD = 100 V, Tj = 150 °C - 14 μC
IRRM Reverse recovery current (see Figure 16) 50 A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Doc ID 18313 Rev 5 5/13

Electrical characteristics STW48NM60N

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance
AM09091v1
ID
(A) Tj=150°C
Tc=25°C
Single pulse

100 10µs
is
ea )
ar S(on
is D
th R
in
n m ax 100µs
10 tio y
e ra d b
p e
O imit
L
1ms
1 10ms

0.1
0.1 1 10 100 VDS(V)

Figure 4. Output characteristics Figure 5. Transfer characteristics

AM09092v1 AM09093v1
ID ID
(A) (A)
VGS=10V 7V VDS=19V
100 100

80 80
6V

60 60

40 40
5V
20 20

0 0
0 5 10 15 20 VDS(V) 0 2 4 6 8 10 VGS(V)

Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on-resistance

AM09028v1 AM09095v1
VDS RDS(on)
(norm)
ID=1mA (Ω)
1.10
0.058
VGS=10V
1.08
0.057
1.06
0.056
1.04
1.02 0.055
1.00 0.054
0.98
0.053
0.96
0.052
0.94
0.92 0.051
-50 -25 0 25 50 75 100 TJ(°C) 0 5 10 15 20 25 30 35 40 ID(A)

6/13 Doc ID 18313 Rev 5

STW48NM60N Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

AM09096v1 AM09097v1
VGS C
(V) (pF)
VDD=480V
12 500
ID=44A 10000
VDS
10 Ciss
400
1000
8
300
6 100 Coss
200
4
10 Crss
2 100

0 0 1
0 20 40 60 80 100 120 140 Qg(nC) 0.1 1 10 100 VDS(V)

Figure 10. Output capacitance stored energy Figure 11. Normalized gate threshold voltage
vs temperature
AM15357v1 AM09098v1
Eoss VGS(th)
(norm)
(µJ)
1.10 ID=250µA
24

20
1.00
16

12 0.90

8
0.80
4

0 0.70
0 100 200 300 400 500 600 VDS(V) -50 -25 0 25 50 75 100 125 TJ(°C)

Figure 12. Source-drain diode forward Figure 13. Normalized on-resistance vs

characteristics temperature
AM09100v1 AM09099v1
VSD (V) RDS(on)
(norm)

1.4 TJ=-50°C 2.1 ID=20A

1.2 1.9
TJ=25°C
1.0 1.7
TJ=150°C 1.5
0.8
1.3
0.6
1.1
0.4
0.9
0.2
0.7
0 0.5
0 5 10 15 20 25 30 35 40 ISD(A) -50 -25 0 25 50 75 100 125 TJ(°C)

Doc ID 18313 Rev 5 7/13

Test circuits STW48NM60N

3 Test circuits

Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. μF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test
switching and diode recovery times circuit

L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
V(BR)DSS ton toff
tr tdoff tf
VD tdon

90% 90%
IDM
10%
ID 10% VDS
0

VDD VDD 90%

VGS

AM01472v1 0 10% AM01473v1

8/13 Doc ID 18313 Rev 5

STW48NM60N Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

Doc ID 18313 Rev 5 9/13

Package mechanical data STW48NM60N

Table 8. TO-247 mechanical data

mm.
Dim.
Min. Typ. Max.

A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70

10/13 Doc ID 18313 Rev 5

STW48NM60N Package mechanical data

Figure 20. TO-247 drawing

0075325_G

Doc ID 18313 Rev 5 11/13

Revision history STW48NM60N

5 Revision history

Table 9. Document revision history

Date Revision Changes

06-Dec-2010 1 First release.

15-Apr-2011 2 Document status promoted from preliminary data to datasheet.
04-Jul-2011 3 Updated Figure 7.
– Modified: Figure 2
10-Oct-2012 4 – Added: Figure 10
– Updated: Section 4: Package mechanical data
19-Feb-2013 5 Updated Table 7: Source drain diode.

12/13 Doc ID 18313 Rev 5

STW48NM60N

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Doc ID 18313 Rev 5 13/13