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IRF640T
N-channel 200V - 0.15Ω - 15A - TO-220
MESH OVERLAY™ Power MOSFET

General features
Type VDSS RDS(on) ID
IRF640T 200V <0.16Ω 15A
■ Extremely high dv/dt capability
■ Gate charge minimized
3
■ Very low intrinsic capacitances 1
2

TO-220
Description
This Power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
Internal schematic diagram
Applications
■ Switching application

Order codes
Part number Marking Package Packaging
IRF640T IRF640T TO-220 Tube

October 2006 Rev 1 1/12

www.st.com 12

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Contents IRF640T

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6

3 Test circuit ................................................ 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/12 Rev 1

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IRF640T Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage (VGS = 0) 200 V

VGS Gate-source voltage ± 20 V
ID Drain current (continuous) at TC = 25°C 15 A
ID Drain current (continuous) at TC=100°C 10 A
(1)
IDM Drain current (pulsed) 60 A
PTOT Total dissipation at TC = 25°C 90 W
Derating factor 0.72 W/°C
dv/dt(2) Peak diode recovery voltage slope 15 V/ns
TJ Operating junction temperature
-55 to 150 °C
Tstg Storage temperature
1. Pulse width limited by safe operating area
2. ISD ≤15A, di/dt ≤300A/µs, VDD =80%V(BR)DSS

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 1.38 °C/W

Rthj-a Thermal resistance junction-ambient max 62.5 °C/W
Tl Maximum lead temperature for soldering purpose 300 °C

Table 3. Avalanche data

Symbol Parameter Value Unit

Avalanche curent, repetitive or not-repetitive

IAR 15 A
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS 110 mJ
(starting Tj=25°C, Id=Iar, Vdd=50V)

Rev 1 3/12

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Electrical characteristics IRF640T

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 1mA, VGS= 0 200 V
voltage

Zero gate voltage drain VDS = Max rating, 1 µA

IDSS
current (VGS = 0) VDS = Max rating @125°C 10 µA

Gate body leakage current

IGSS VGS = ±20V ±100 nA
(VDS = 0)

VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 2 3 4 V

Static drain-source on
RDS(on) VGS= 10V, ID= 7.5A 0.15 0.16 Ω
resistance

Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS =8V, ID = 7.5A 12 S

Ciss Input capacitance

800 pF
Coss Output capacitance VDS =25V, f=1 MHz,
165 pF
Reverse transfer VGS=0
Crss 26 pF
capacitance
Qg Total gate charge VDD=160V, ID = 15A 24 nC
Qgs Gate-source charge VGS =10V 4.4 nC
Qgd Gate-drain charge (see Figure 14) 11.6 nC

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

4/12 Rev 1

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IRF640T Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

VDD=100 V, ID= 7.5A,

td(on) Turn-on delay time 11.5 ns
RG=4.7Ω, VGS=10V
tr Rise time 22 ns
(see Figure 13)
VDD = 100 V, ID = 7.5A,
td(off) Turn-off delay time 19 ns
RG = 4.7Ω, VGS = 10V
tf Fall time 11 ns
(see Figure 13)

Table 7. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

ISD Source-drain current 15 A

ISDM(1) Source-drain current (pulsed) 60 A

VSD(2) Forward on voltage ISD=15A, VGS=0 1.6 V

trr Reverse recovery time ISD=15A, VDD=50V 125 ns

Qrr Reverse recovery charge di/dt = 100A/µs, 0.55 µC
IRRM Reverse recovery current (see Figure 18) 8.8 A

trr Reverse recovery time ISD=15A, VDD=50V 148 ns

Qrr Reverse recovery charge di/dt = 100A/µs, 0.73 µC
IRRM Reverse recovery current Tj=150°C (see Figure 18) 9.9 A

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Rev 1 5/12

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Electrical characteristics IRF640T

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance

Figure 3. Output characteristics Figure 4. Transfer characteristics

Figure 5. Static drain-source on resistance Figure 6. Normalized BVDSS vs temperature

6/12 Rev 1

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IRF640T Electrical characteristics

Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs

vs temperature temperature

Figure 11. Source-drain forward Figure 12. Maximum avalanche energy vs

characteristics temperature

Rev 1 7/12

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Test circuit IRF640T

3 Test circuit

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit
resistive load

Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test
switching and diode recovery times circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

8/12 Rev 1

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IRF640T Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

Rev 1 9/12

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Package mechanical data IRF640T

TO-220 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116

10/12 Rev 1

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IRF640T Revision history

5 Revision history

Table 8. Revision history

Date Revision Changes

06-Oct-2006 1 First Release

Rev 1 11/12

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IRF640T

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