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DRV8833
SLVSAR1E – JANUARY 2011 – REVISED JULY 2015

DRV8833 Dual H-Bridge Motor Driver

1 Features 3 Description
1• Dual-H-Bridge Current-Control Motor Driver The DRV8833 device provides a dual bridge motor
driver solution for toys, printers, and other
– Can Drive Two DC Motors or One Stepper mechatronic applications.
Motor
– Low MOSFET ON-Resistance: HS + LS 360 The device has two H-bridge drivers, and can drive
two DC brush motors, a bipolar stepper motor,
mΩ
solenoids, or other inductive loads.
• Output Current (at VM = 5 V, 25°C)
The output driver block of each H-bridge consists of
– 1.5-A RMS, 2-A Peak per H-Bridge in PWP N-channel power MOSFETs configured as an H-
and RTY Package Options bridge to drive the motor windings. Each H-bridge
– 500-mA RMS, 2-A Peak per H-Bridge in PW includes circuitry to regulate or limit the winding
Package Option current.
• Outputs can be in Parallel for Internal shutdown functions with a fault output pin are
– 3-A RMS, 4-A Peak (PWP and RTY) provided for overcurrent protection, short-circuit
protection, undervoltage lockout, and
– 1-A RMS, 4-A Peak (PW)
overtemperature. A low-power sleep mode is also
• Wide Power Supply Voltage Range: provided.
2.7 to 10.8 V
The DRV8833 is packaged in a 16-pin WQFN
• PWM Winding Current Regulation and Current package with PowerPAD™ (Eco-friendly: RoHS & no
Limiting Sb/Br).
• Thermally Enhanced Surface-Mount Packages
Device Information(1)
2 Applications PART NUMBER PACKAGE BODY SIZE (NOM)
• Battery-Powered Toys TSSOP (16) 5.00 mm × 4.40 mm

• POS Printers DRV8833 HTSSOP (16) 5.00 mm × 4.40 mm

WQFN (16) 4.00 mm × 4.00 mm
• Video Security Cameras
• Office Automation Machines (1) For all available packages, see the orderable addendum at
the end of the data sheet.
• Gaming Machines
• Robotics
Simplified Schematic
2.7 to 10.8 V

PWM DRV8833
+

1.5 A M
Controller

nSLEEP Stepper or
Brushed DC + t
nFAULT Motor Driver
1.5 A

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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Table of Contents
1 Features .................................................................. 1 8.1 Application Information............................................ 12
2 Applications ........................................................... 1 8.2 Typical Application .................................................. 12
3 Description ............................................................. 1 9 Power Supply Recommendations...................... 14
4 Revision History..................................................... 2 9.1 Bulk Capacitance .................................................... 14
9.2 Power Supply and Logic Sequencing ..................... 14
5 Pin Configuration and Functions ......................... 3
6 Specifications......................................................... 5 10 Layout................................................................... 15
10.1 Layout Guidelines ................................................. 15
6.1 Absolute Maximum Ratings ...................................... 5
10.2 Layout Example .................................................... 15
6.2 ESD Ratings ............................................................ 5
10.3 Thermal Considerations ........................................ 16
6.3 Recommended Operating Conditions....................... 5
10.4 Power Dissipation ................................................. 16
6.4 Thermal Information .................................................. 5
6.5 Electrical Characteristics........................................... 6 11 Device and Documentation Support ................. 17
6.6 Typical Characteristics .............................................. 7 11.1 Documentation Support ........................................ 17
11.2 Community Resources.......................................... 17
7 Detailed Description .............................................. 8
11.3 Trademarks ........................................................... 17
7.1 Overview ................................................................... 8
11.4 Electrostatic Discharge Caution ............................ 17
7.2 Functional Block Diagram ......................................... 8
11.5 Glossary ................................................................ 17
7.3 Feature Description................................................... 9
7.4 Device Functional Modes........................................ 11 12 Mechanical, Packaging, and Orderable
Information ........................................................... 17
8 Application and Implementation ........................ 12

4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision D (March 2015) to Revision E Page

• Updated Features bullets to include specifications for other packages ................................................................................. 1

• Added note back to Pin Functions regarding the different I/O types ..................................................................................... 3
• Corrected the device name and current regulation description in Overview ......................................................................... 8
• Corrected output current to 1.5-A RMS from 700-mA RMS .................................................................................................. 8

Changes from Revision C (January 2013) to Revision D Page

• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1

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5 Pin Configuration and Functions

PWP Package
16-Pin HTSSOP RTY Package
Top View 16-Pin WQFN
Top View

nSLEEP
nSLEEP 1 16 AIN1

AOUT1

AIN1
AIN2
AOUT1 2 15 AIN2
AISEN 3 14 VINT
AOUT2 4 GND 13 GND

16
15
14
13
BOUT2 5 (PPAD) 12 VM
BISEN 6 11 VCP AISEN 1 12 VINT
GND
BOUT1 7 10 BIN2 AOUT2 2
(PPAD)
11 GND
BOUT2 3 10 VM
nFAULT 8 9 BIN1
BISEN 4 9 VCP

8
5
6
7
PW Package

BOUT1
nFAULT
BIN1
BIN2
16-Pin TSSOP
Top View

nSLEEP 1 16 AIN1
AOUT1 2 15 AIN2
AISEN 3 14 VINT
AOUT2 4 13 GND
BOUT2 5 12 VM
BISEN 6 11 VCP
BOUT1 7 10 BIN2
nFAULT 8 9 BIN1

Pin Functions
PIN
EXTERNAL COMPONENTS
HTSSOP, I/O (1) DESCRIPTION
NAME WQFN OR CONNECTIONS
TSSOP
POWER AND GROUND
11 Device ground. HTSSOP package Both the GND pin and device PowerPAD
GND 13 —
PPAD has PowerPAD. must be connected to ground.
Bypass to GND with 2.2-μF, 6.3-V
VINT 12 14 — Internal supply bypass
capacitor.
Connect to motor supply. A 10-µF
VM 10 12 — Device power supply (minimum) ceramic bypass capacitor to
GND is recommended.
Connect a 0.01-μF, 16-V (minimum) X7R
VCP 9 11 IO High-side gate drive voltage
ceramic capacitor to VM.
CONTROL
Logic input controls state of AOUT1.
AIN1 14 16 I Bridge A input 1
Internal pulldown.
Logic input controls state of AOUT2.
AIN2 13 15 I Bridge A input 2
Internal pulldown.
Logic input controls state of BOUT1.
BIN1 7 9 I Bridge B input 1
Internal pulldown.
Logic input controls state of BOUT2.
BIN2 8 10 I Bridge B input 2
Internal pulldown.
Logic high to enable device, logic low to
nSLEEP 15 1 I Sleep mode input enter low-power sleep mode and reset all
internal logic. Internal pulldown.

(1) I = Input, O = Output, OZ = Tri-state output, OD = Open-drain output, IO = Input/output

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Pin Functions (continued)

PIN
EXTERNAL COMPONENTS
HTSSOP, I/O (1) DESCRIPTION
NAME WQFN OR CONNECTIONS
TSSOP
STATUS
Logic low when in fault condition
nFAULT 6 8 OD Fault output
(overtemperature, overcurrent)
OUTPUT
Connect to current sense resistor for bridge
AISEN 1 3 IO Bridge A ground / ISENSE
A, or GND if current control not needed
Connect to current sense resistor for bridge
BISEN 4 6 IO Bridge B ground / ISENSE
B, or GND if current control not needed
AOUT1 16 2 O Bridge A output 1
Connect to motor winding A
AOUT2 2 4 O Bridge A output 2
BOUT1 5 7 O Bridge B output 1
Connect to motor winding B
BOUT2 3 5 O Bridge B output 2

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6 Specifications
6.1 Absolute Maximum Ratings
(1)
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VM Power supply voltage –0.3 11.8 V
Digital input pin voltage –0.5 7 V
xISEN pin voltage –0.3 0.5 V
Peak motor drive output current Internally limited A
TJ Operating junction temperature –40 150 °C
Tstg Storage temperature –60 150 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) ±4000
Electrostatic
V(ESD) Charged device model (CDM), per JEDEC specification JESD22-C101, all V
discharge ±1500
pins (2)

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

TA = 25°C (unless otherwise noted)
MIN NOM MAX UNIT
VM Motor power supply voltage range (1) 2.7 10.8 V
VDIGIN Digital input pin voltage range –0.3 5.75 V
IOUT RTY package continuous RMS or DC output current per bridge (2) 1.5 A

(1) RDS(ON) increases and maximum output current is reduced at VM supply voltages below 5 V.
(2) VM = 5 V, power dissipation and thermal limits must be observed.

6.4 Thermal Information

DRV8833
PWP RTY PW
THERMAL METRIC (1) UNIT
(HTSSOP) (WQFN) (TSSOP)
16 PINS 16 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 40.5 37.2 103.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 32.9 34.3 38 °C/W
RθJB Junction-to-board thermal resistance 28.8 15.3 48.1 °C/W
ψJT Junction-to-top characterization parameter 0.6 0.3 3 °C/W
ψJB Junction-to-board characterization parameter 11.5 15.4 47.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 4.8 3.5 N/A °C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.

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6.5 Electrical Characteristics

TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY
IVM VM operating supply current VM = 5 V, xIN1 = 0 V, xIN2 = 0 V 1.7 3 mA
IVMQ VM sleep mode supply current VM = 5 V 1.6 2.5 μA
VUVLO VM undervoltage lockout voltage VM falling 2.6 V
VM undervoltage lockout
VHYS 90 mV
hysteresis
LOGIC-LEVEL INPUTS
nSLEEP 0.5
VIL Input low voltage V
All other pins 0.7
nSLEEP 2.5
VIH Input high voltage V
All other pins 2
VHYS Input hysteresis 0.4 V
nSLEEP 500
RPD Input pulldown resistance kΩ
All except nSLEEP 150
IIL Input low current VIN = 0 1 μA
VIN = 3.3 V, nSLEEP 6.6 13
IIH Input high current μA
VIN = 3.3 V, all except nSLEEP 16.5 33
tDEG Input deglitch time 450 ns
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
VOL Output low voltage IO = 5 mA 0.5 V
IOH Output high leakage current VO = 3.3 V 1 μA
H-BRIDGE FETs
VM = 5 V, I O = 500 mA, TJ = 25°C 200
VM = 5 V, IO = 500 mA, TJ = 85°C 325
HS FET on resistance
VM = 2.7 V, I O = 500 mA, TJ = 25°C 250
VM = 2.7 V, IO = 500 mA, TJ = 85°C 350
RDS(ON) mΩ
VM = 5 V, I O = 500 mA, TJ = 25°C 160
VM = 5 V, IO = 500 mA, TJ = 85°C 275
LS FET on resistance
VM = 2.7 V, I O = 500 mA, TJ = 25°C 200
VM = 2.7 V, IO = 500 mA, TJ = 85°C 300
IOFF Off-state leakage current VM = 5 V, TJ = 25°C, VOUT = 0 V –1 1 μA
MOTOR DRIVER
ƒPWM Current control PWM frequency Internal PWM frequency 50 kHz
tR Rise time VM = 5 V, 16 Ω to GND, 10% to 90% VM 180 ns
tF Fall time VM = 5 V, 16 Ω to GND, 10% to 90% VM 160 ns
tPROP Propagation delay INx to OUTx VM = 5 V 1.1 µs
tDEAD Dead time (1) VM = 5 V 450 ns
PROTECTION CIRCUITS
IOCP Overcurrent protection trip level 2 3.3 A
tDEG OCP Deglitch time 4 µs
tOCP Overcurrent protection period 1.35 ms
tTSD Thermal shutdown temperature Die temperature 150 160 180 °C

(1) Internal dead time. External implementation is not necessary.

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Electrical Characteristics (continued)

TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CURRENT CONTROL
VTRIP xISEN trip voltage 160 200 240 mV
tBLANK Current sense blanking time 3.75 µs
SLEEP MODE
tWAKE Start-up time nSLEEP inactive high to H-bridge on 1 ms

6.6 Typical Characteristics

3.0 25.0
±40ƒC
25°C
2.5 20.0
85°C
2.0 15.0

IVMQ (uA)
IVM (mA)

1.5 10.0

1.0 5.0
±40ƒC
0.5 25°C 0.0

85°C
0.0 ±5.0
2.7 3.6 4.5 5.4 6.3 7.2 8.1 9.0 9.9 10.8 2.7 3.6 4.5 5.4 6.3 7.2 8.1 9.0 9.9 10.8
VVM (V) C001
VVM (V) C002

Figure 1. Operating Current Figure 2. Sleep Current

800 800
2.7 V -40°C
700 5V 700
25°C
RDS(ON) (HS + LS) (mŸ)

RDS(ON) (HS + LS) (mŸ)

600 10.8 V 600 85°C

500 500

400 400

300 300

200 200

100 100

0 0
±40 ±30 ±20 ±10 0 10 20 30 40 50 60 70 80 2.7 3.6 4.5 5.4 6.3 7.2 8.1 9.0 9.9 10.8
Temperature (ƒC) C003 VVM (V) C004

Figure 3. RDS(on) (HS + LS) Figure 4. RDS(on) (HS + LS)

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7 Detailed Description

7.1 Overview
The DRV8833 device is an integrated motor driver solution for brushed DC or bipolar stepper motors. The device
integrates two NMOS H-bridges and current regulation circuitry. The DRV8833 can be powered with a supply
voltage from 2.7 to 10.8 V and can provide an output current up to 1.5-A RMS.
A simple PWM interface allows easy interfacing to the controller circuit.
The current regulation is a fixed frequency PWM slow decay.
The device includes a low-power sleep mode, which lets the system save power when not driving the motor.

7.2 Functional Block Diagram

2.2uF
VM VINT

VM
Internal
VM Charge VCP
Ref &
Regs Pump
10uF 0.01uF
VM
Drives 2x DC motor
or 1x Stepper
AOUT1

AIN1 Gate
Drive Step
VM DCM
AIN2 & Motor
OCP

BIN1 AOUT2

BIN2
AISEN
ISEN
Logic VM
nSLEEP

BOUT1

nFAULT
Gate
Drive DCM
& VM
OCP

Over- BOUT2
Temp

BISEN
ISEN

GND

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7.3 Feature Description

7.3.1 Fixed-Frequency PWM Motor Drivers
DRV8833 contains two identical H-bridge motor drivers with current-control PWM circuitry. Figure 5 shows a
block diagram of the circuitry.

OCP VM

VM
VCP, VINT

xOUT1

xIN1
Pre-
drive DCM

xOUT 2

xIN2 PWM

OCP

- xISEN

+
Optional

REF (200mV)

Figure 5. Motor Control Circuitry

7.3.2 Bridge Control and Decay Modes

The AIN1 and AIN2 input pins control the state of the AOUT1 and AOUT2 outputs; similarly, the BIN1 and BIN2
input pins control the state of the BOUT1 and BOUT2 outputs. Table 1 shows the logic.

Table 1. H-Bridge Logic

xIN1 xIN2 xOUT1 xOUT2 FUNCTION
Coast/fast
0 0 Z Z
decay
0 1 L H Reverse
1 0 H L Forward
Brake/slow
1 1 L L
decay

The inputs can also be used for PWM control of the motor speed. When controlling a winding with PWM, when
the drive current is interrupted, the inductive nature of the motor requires that the current must continue to flow.
This is called recirculation current. To handle this recirculation current, the H-bridge can operate in two different
states: fast decay or slow decay. In fast decay mode, the H-bridge is disabled and recirculation current flows
through the body diodes; in slow decay, the motor winding is shorted.
To PWM using fast decay, the PWM signal is applied to one xIN pin while the other is held low; to use slow
decay, one xIN pin is held high.

Table 2. PWM Control of Motor Speed

xIN1 xIN2 FUNCTION
PWM 0 Forward PWM, fast decay
1 PWM Forward PWM, slow decay
0 PWM Reverse PWM, fast decay
PWM 1 Reverse PWM, slow decay

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Figure 6 shows the current paths in different drive and decay modes.
VM VM

1 Forward drive 1 Reverse drive

1 2 Fast decay 1 2 Fast decay
xOUT1 xOUT2 3 Slow decay xOUT1 xOUT2 3 Slow decay
2 2

3 3

FORWARD REVERSE
Figure 6. Drive and Decay Modes

7.3.3 Current Control

The current through the motor windings may be limited, or controlled, by a fixed-frequency PWM current
regulation, or current chopping. For DC motors, current control is used to limit the start-up and stall current of the
motor. For stepper motors, current control is often used at all times.
When an H-bridge is enabled, current rises through the winding at a rate dependent on the DC voltage and
inductance of the winding. If the current reaches the current chopping threshold, the bridge disables the current
until the beginning of the next PWM cycle. Immediately after the current is enabled, the voltage on the xISEN pin
is ignored for a fixed period of time before enabling the current sense circuitry. This blanking time is fixed at 3.75
μs. This blanking time also sets the minimum on time of the PWM when operating in current chopping mode.
The PWM chopping current is set by a comparator which compares the voltage across a current sense resistor
connected to the xISEN pins with a reference voltage. The reference voltage is fixed at 200 mV.
The chopping current is calculated in Equation 1.
200 mV
ICHOP
RISENSE (1)
Example: If a 1-Ω sense resistor is used, the chopping current will be 200 mV/1 Ω = 200 mA.
Once the chopping current threshold is reached, the H-bridge switches to slow decay mode. Winding current is
recirculated by enabling both of the low-side FETs in the bridge. This state is held until the beginning of the next
fixed-frequency PWM cycle.
If current control is not needed, the xISEN pins should be connected directly to ground.

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7.3.4 nSLEEP Operation

Driving nSLEEP low will put the device into a low power sleep state. In this state, the H-bridges are disabled, the
gate drive charge pump is stopped, all internal logic is reset, and all internal clocks are stopped. All inputs are
ignored until nSLEEP returns inactive high. When returning from sleep mode, some time (up to 1 ms) needs to
pass before the motor driver becomes fully operational. To make the board design simple, the nSLEEP can be
pulled up to the supply (VM). TI recommends using a pullup resistor when this is done. This resistor limits the
current to the input in case VM is higher than 6.5 V. Internally, the nSLEEP pin has a 500-kΩ resistor to GND. It
also has a clamping Zener diode that clamps the voltage at the pin at 6.5 V. Currents greater than 250 µA can
cause damage to the input structure. Hence the recommended pullup resistor would be between 20 kΩ and
75 kΩ.

7.3.5 Protection Circuits

The DRV8833 is fully protected against undervoltage, overcurrent and overtemperature events.

7.3.5.1 Overcurrent Protection (OCP)

An analog current limit circuit on each FET limits the current through the FET by limiting the gate drive. If this
analog current limit persists for longer than the OCP deglitch time, all FETs in the H-bridge will be disabled and
the nFAULT pin will be driven low. The driver will be re-enabled after the OCP retry period (tOCP) has passed.
nFAULT becomes high again at this time. If the fault condition is still present, the cycle repeats. If the fault is no
longer present, normal operation resumes and nFAULT remains deasserted. Please note that only the H-bridge
in which the OCP is detected will be disabled while the other bridge will function normally.
Overcurrent conditions are detected independently on both high- and low-side devices; that is, a short to ground,
supply, or across the motor winding will all result in an overcurrent shutdown. Overcurrent protection does not
use the current sense circuitry used for PWM current control, so it functions even without presence of the xISEN
resistors.

7.3.5.2 Thermal Shutdown (TSD)

If the die temperature exceeds safe limits, all FETs in the H-bridge will be disabled and the nFAULT pin will be
driven low. Once the die temperature has fallen to a safe level, operation will automatically resume.

7.3.5.3 Undervoltage Lockout (UVLO)

If at any time the voltage on the VM pin falls below the undervoltage lockout threshold voltage, all circuitry in the
device will be disabled, and all internal logic will be reset. Operation will resume when VM rises above the UVLO
threshold. nFAULT is driven low in the event of an undervoltage condition.

Table 3. Device Protection

INTERNAL
FAULT CONDITION ERROR REPORT H-BRIDGE RECOVERY
CIRCUITS
VM undervoltage
VM < 2.5 V None Disabled Disabled VM > 2.7 V
(UVLO)
Overcurrent (OCP) IOUT > IOCP FAULTn Disabled Operating OCP
Thermal Shutdown
TJ > TTSD FAULTn Disabled Operating TJ < TTSD – THYS
(TSD)

7.4 Device Functional Modes

The DRV8833 is active unless the nSLEEP pin is brought logic low. In sleep mode, the H-bridge FETs are
disabled (Hi-Z). The DRV8833 is brought out of sleep mode automatically if nSLEEP is brought logic high.
tWAKE must elapse before the outputs change state after wakeup.

Table 4. Modes of Operation

FAULT CONDITION H-BRIDGE INTERNAL CIRCUITS
Operating nSLEEP pin high Operating Operating
Sleep mode nSLEEP pin low Disabled Disabled
Fault encountered Any fault condition met Disabled See Table 3

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8 Application and Implementation

NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.

8.1 Application Information

The DRV8833 is used in brushed DC or stepper motor control. The following design procedure can be used to
configure the DRV8833 in a brushed DC motor application. The inputs and outputs are connected in parallel to
achieve higher current.

8.2 Typical Application

The two H-bridges in the DRV8833 can be connected in parallel for double the current of a single H-bridge. The
internal dead time in the DRV8833 prevents any risk of cross-conduction (shoot-through) between the two
bridges due to timing differences between the two bridges. Figure 7 shows the connections.
VM

From Controller U1 C4 +
DRV8833 10uF C1

12
0.01uF

IN1
16
AIN1 VM VCP
11
IN2 15
AIN2 2
9 AOUT1 4 M
BIN1 AOUT2
10
BIN2 7
BOUT1
1 BOUT2 5
LOW = SLEEP, HIGH = RUN NSLEEP 8
NFAULT
14
VINT
C2
AISEN 3
GNDP

2.2uF
BISEN 6
GND

R2
PP
13

200m

Figure 7. Parallel Mode

8.2.1 Design Requirements

Table 5. Design Parameters

DESIGN PARAMETER REFERENCE EXAMPLE VALUE
Motor voltage VM 10 V
Motor RMS current IRMS 0.8 A
Motor start-up current ISTART 2A
Motor current trip point ITRIP 2.5 A

8.2.2 Detailed Design Procedure

8.2.2.1 Motor Voltage

The motor voltage to use will depend on the ratings of the motor selected and the desired RPM. A higher voltage
spins a brushed DC motor faster with the same PWM duty cycle applied to the power FETs. A higher voltage
also increases the rate of current change through the inductive motor windings.
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8.2.2.2 Motor Current Trip Point

When the voltage on pin xISEN exceeds VTRIP (0.2 V), current regulation is activated. The RISENSE resistor should
be sized to set the desired ICHOP level.
RISENSE = 0.2 V / ICHOP (2)
To set ICHOP to 1 A, RSENSE = 0.2 V / 1 A = 0.2 Ω.

8.2.2.3 Sense Resistor

For optimal performance, it is important for the sense resistor to be:
• Surface-mount
• Low inductance
• Rated for high enough power
• Placed closely to the motor driver
The power dissipated by the sense resistor equals IRMS2 × R. For example, if peak motor current is 3 A, RMS
motor current is 2 A, and a 0.05-Ω sense resistor is used, the resistor will dissipate 2 A2× 0.05 Ω = 0.2 W. The
power quickly increases with higher current levels.
Resistors typically have a rated power within some ambient temperature range, along with a derated power curve
for high ambient temperatures. When a PCB is shared with other components generating heat, margin should be
added. For best practice, measure the actual sense resistor temperature in a final system, along with the power
MOSFETs, as those are often the hottest components.
Because power resistors are larger and more expensive than standard resistors, the common practice is to use
multiple standard resistors in parallel, between the sense node and ground. This distributes the current and heat
dissipation.

8.2.3 Application Curve

Figure 8. Current Regulation

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SLVSAR1E – JANUARY 2011 – REVISED JULY 2015 www.ti.com

9 Power Supply Recommendations

9.1 Bulk Capacitance

Having an appropriate local bulk capacitance is an important factor in motor drive system design. It is generally
beneficial to have more bulk capacitance, while the disadvantages are increased cost and physical size.
The amount of local capacitance needed depends on a variety of factors, including:
• The highest current required by the motor system
• The capacitance and ability to source current
• The amount of parasitic inductance between the power supply and motor system
• The acceptable voltage ripple
• The type of motor used (brushed DC, brushless DC, stepper)
• The motor braking method
The inductance between the power supply and the motor drive system limits the rate current can change from
the power supply. If the local bulk capacitance is too small, the system responds to excessive current demands
or dumps from the motor with a change in voltage. When adequate bulk capacitance is used, the motor voltage
remains stable and high current can be quickly supplied.
The data sheet generally provides a recommended value, but system-level testing is required to determine the
appropriate sized bulk capacitor.

Parasitic Wire
Inductance
Power Supply Motor Drive System

VM

+ + Motor
± Driver

GND

Local IC Bypass
Bulk Capacitor Capacitor

Figure 9. Example Setup of Motor Drive System With External Power Supply

The voltage rating for bulk capacitors should be higher than the operating voltage, to provide margin for cases
when the motor transfers energy to the supply.

9.2 Power Supply and Logic Sequencing

There is no specific sequence for powering up the DRV8833. The presence of digital input signals is acceptable
before VM is applied. After VM is applied to the DRV8833, the device begins operation based on the status of
the control pins.

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 DRV8833
www.ti.com SLVSAR1E – JANUARY 2011 – REVISED JULY 2015

10 Layout

10.1 Layout Guidelines

The VM pin should be bypassed to GND using low-ESR ceramic bypass capacitors with a recommended value
of 10-μF rated for VM. This capacitor should be placed as close to the VM pin as possible with a thick trace or
ground plane connection to the device GND pin.
A low-ESR ceramic capacitor must be placed in between the VM and VCP pins. TI recommends a value of 0.01-
μF rated for 16 V. Place this component as close to the pins as possible.
Bypass VINT to ground with a 2.2-μF ceramic capacitor rated 6.3 V. Place this bypass capacitor as close to the
pin as possible.

10.1.1 Heatsinking
The PowerPAD package uses an exposed pad to remove heat from the device. For proper operation, this pad
must be thermally connected to copper on the PCB to dissipate heat. On a multilayer PCB with a ground plane,
this can be accomplished by adding a number of vias to connect the thermal pad to the ground plane. On PCBs
without internal planes, copper area can be added on either side of the PCB to dissipate heat. If the copper area
is on the opposite side of the PCB from the device, thermal vias are used to transfer the heat between top and
bottom layers.
For details about how to design the PCB, refer to TI application report, PowerPAD™ Thermally Enhanced
Package (SLMA002) and TI application brief, PowerPAD™ Made Easy (SLMA004), available at www.ti.com.
In general, the more copper area that can be provided, the more power can be dissipated.

NOTE
The PW package option is not thermally enhanced and TI recommends adhering to the
power dissipation limits.

10.2 Layout Example

nSLEEP AIN1
2.2 µF
AOUT1 AIN2

AISEN VINT

RAISEN AOUT2 GND

BOUT2 VM
.01 µF
BISEN VCP

RBISEN BOUT1 BIN2 10 µF

nFAULT BIN1

Figure 10. Recommended Layout Example

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SLVSAR1E – JANUARY 2011 – REVISED JULY 2015 www.ti.com

10.3 Thermal Considerations

10.3.1 Maximum Output Current

In actual operation, the maximum output current achievable with a motor driver is a function of die temperature.
This, in turn, is greatly affected by ambient temperature and PCB design. Basically, the maximum motor current
will be the amount of current that results in a power dissipation level that, along with the thermal resistance of the
package and PCB, keeps the die at a low enough temperature to stay out of thermal shutdown.
The dissipation ratings given in the data sheet can be used as a guide to calculate the approximate maximum
power dissipation that can be expected to be possible without entering thermal shutdown for several different
PCB constructions. However, for accurate data, the actual PCB design must be analyzed through measurement
or thermal simulation.

10.3.2 Thermal Protection

The DRV8833 has thermal shutdown (TSD) as described above. If the die temperature exceeds approximately
150°C, the device will be disabled until the temperature drops by 45°C.
Any tendency of the device to enter TSD is an indication of either excessive power dissipation, insufficient
heatsinking, or too high an ambient temperature.

10.4 Power Dissipation

Power dissipation in the DRV8833 is dominated by the DC power dissipated in the output FET resistance, or
RDS(ON). There is additional power dissipated due to PWM switching losses, which are dependent on PWM
frequency, rise and fall times, and VM supply voltages. These switching losses are typically on the order of 10%
to 30% of the DC power dissipation.
The DC power dissipation of one H-bridge can be roughly estimated by Equation 3.
  
3TOT   +6 ± 5DS(ON) u ,OUT(RMS)2  /6 ± 5DS(ON) u ,OUT(RMS)2 
where
• PTOT is the total power dissipation
• HS - RDS(ON) is the resistance of the high-side FET
• LS - RDS(ON) is the resistance of the low-side FET
• IOUT(RMS) is the RMS output current being applied to the motor (3)
RDS(ON) increases with temperature, so as the device heats, the power dissipation increases. This must be taken
into consideration when sizing the heatsink.

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 DRV8833
www.ti.com SLVSAR1E – JANUARY 2011 – REVISED JULY 2015

11 Device and Documentation Support

11.1 Documentation Support

11.1.1 Related Documentation
For related documentation see the following:
• PowerPAD™ Thermally Enhanced Package, SLMA002
• PowerPAD™ Made Easy, SLMA004
• Current Recirculation and Decay Modes, SLVA321
• Calculating Motor Driver Power Dissipation, SLVA504
• Understanding Motor Driver Current Ratings, SLVA505

11.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.

11.3 Trademarks
PowerPAD, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 17

Product Folder Links: DRV8833
 PACKAGE OPTION ADDENDUM

www.ti.com 26-Apr-2015

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)

DRV8833PW ACTIVE TSSOP PW 16 90 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 8833PW

& no Sb/Br)
DRV8833PWP ACTIVE HTSSOP PWP 16 90 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 DRV8833
& no Sb/Br)
DRV8833PWPR ACTIVE HTSSOP PWP 16 2000 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 DRV8833
& no Sb/Br)
DRV8833PWR ACTIVE TSSOP PW 16 2000 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 8833PW
& no Sb/Br)
DRV8833RTYR ACTIVE QFN RTY 16 3000 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 DRV8833
& no Sb/Br)
DRV8833RTYT ACTIVE QFN RTY 16 250 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 DRV8833
& no Sb/Br)

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

Addendum-Page 1
 PACKAGE OPTION ADDENDUM

www.ti.com 26-Apr-2015

(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2
 PACKAGE MATERIALS INFORMATION

www.ti.com 27-Apr-2015

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
DRV8833PWPR HTSSOP PWP 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
DRV8833PWR TSSOP PW 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
DRV8833RTYR QFN RTY 16 3000 330.0 12.4 4.25 4.25 1.15 8.0 12.0 Q2
DRV8833RTYT QFN RTY 16 250 180.0 12.4 4.25 4.25 1.15 8.0 12.0 Q2

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION

www.ti.com 27-Apr-2015

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
DRV8833PWPR HTSSOP PWP 16 2000 367.0 367.0 35.0
DRV8833PWR TSSOP PW 16 2000 367.0 367.0 35.0
DRV8833RTYR QFN RTY 16 3000 367.0 367.0 35.0
DRV8833RTYT QFN RTY 16 250 210.0 185.0 35.0

Pack Materials-Page 2
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