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13007

13007
DRAWING
NPN Silicon Transistor

High Voltage Switch Mode Application


Features
Feature
� High Speed Switching
� Suitable for Electronic Ballast and Switching Regulator 1.Base 2.Collector 3.Emitter
� Case:TO-220AB

Absolute Maximum Ratings (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Units


VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 430 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current(DC) 8 A
ICP Collector Current(Pulse) 16 A
IB Base Current 4 A
PC Collector Dissipation(Ta=25℃) 80 W
TJ Junction Temperature 150 ℃
TSTG Storage Temperature -65~150 ℃

Electrical Characteristics (Tc=25℃ unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units


BVCEO Collector-Emitter Breakdown Voltage IC=1mA,IB=0 430 V
IEBO Emitter Cut-off Current VEB=9V,Ic=0 0.2 mA
Hfe1 VCE=5V,IC=10mA 8 40
DC Current Gain
Hfe2 VCE=5V,IC=2A 20 40
IC=2A,IB=0.5A 0.8 V
VCE(sat) Collector-Emitter Saturation Voltage IC=5A,IB=1A 0.8 V
IC=8A,IB=2A 2.9 V
IC=2A,IB=0.5A 1.0 V
VBE(sat) Base-Emitter Saturation Voltage
IC=5A,IB=1A 1.0 V
Ft Current Gain Bandwidth Product VCE=10V,IC=0.5A 4 MHZ
Cob Output Capacitance VCB=10V,F=0.1MHZ 110 PF
Ton Turn On time 1.6 us
VCC=125V,IC=5A
TSTG Storge Time 3 us
IB1=-IB2=1A RL=50Ω,
TF Fall Time 0.7 us
Pulse Test:PW≤300us,Duty Cycle≤2%

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Thermal Performance Characteristics

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Mechanical Dimensions

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