PTU13005G Transistor Del Cargador Samsung

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PTU13005G / PTD13005G

Green Package

PTU13005G PTD13005G
PTU13005G/PTD13005G I-PAK(TO-251) D-PAK(TO-252)
NPN Silicon Power Transistor 2

4.0 Amperes / 40 Watts 1


1 3
2
3

Switch Mode series NPN silicon Power Transistor 1. Base 1. Base


2. Collector 2. Collector
- High voltage, high speed power switching
3. Emitter 3. Emitter
- Suitable for switching regulator, inverters motor controls

Absolute Maximum Ratings TC=25℃ unless otherwise noted

CHARACTERISTICS SYMBOL RATING UNIT

Collector-Base Voltage VCBO 800 V

Collector-Emitter Voltage VCEO 400 V

Emitter-Base Voltage VEBO 9 V

Collector Current(DC) IC 4 A

Collector Current(Pulse) ICP 8 A

Base Current IB 2 A

Collector Dissipation(Tc=25℃) PC 40 W

Junction Temperature TJ 150 ℃

Storage Temperature TSTG -55~150 ℃

Electrical Characteristics TC=25℃ unless otherwise noted

CHARACTERISTICS SYMBOL Test Condition Min Typ. Max Unit

Collector-Emitter Breakdown Voltage VCEO IC=10mA, IB=0 400 V

Emitter Cut-off Current IEBO VEB=9V,IC=0 1 mA

*DC Current Gain hFE1 VCE=5V,IC=1A 20 40


hFE2 VCE=5V,IC=2A 8

*Collector-Emitter Saturation Voltage VCE(sat) IC=1A,IB=0.2A 0.5 V


IC=2A,IB=0.5A 0.6 V
IC=4A,IB=1A 1 V

*Base-Emitter Saturation Voltage VBE(sat) IC=1A,IB=0.2A 1.2 V


IC=2A,IB=0.5A 1.6 V

Output Capacitance Cob VCB=10V, f=0.1MHz 65 pF

Current Gain Bandwidth Product fT VCE=10V,IC=0.5A 4 MHz

Turn on Time ton 0.8 μS


Vcc=125V, Ic=2A
Storage Time tstg IB1=0.4A, IB2= -0.4A 4.0 μS
RL=62.5Ω
Fall Time tF 0.9 μS
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

Feb. 2012 Wing On STS REV.A2


PTU13005G / PTD13005G
Typical Characteristics

DC Current Gain Collector-Emitter Saturation Voltage


hFE, DC Current Gain

0
10
1
10

Vce(sat) [V]
IC = 5 * IB
-1
0 10
10 IC = 4 * IB

o o
TJ = 25 C -2
TJ = 25 C
-1
10 10
-2 -1 0 1 -2 -1 0 1
10 10 10 10 10 10 10 10
IC, Collector Current [A] IC, Collector Current [A]

Base-Emitter Saturation Voltage Power Derating


10 50
PD, Power Dissipation [W]

40
Vbe(sat) [V]

IC = 4 * IB
30

IC = 5 * IB
20

10

o
TJ = 25 C
0.1 0
-2 -1 0 1
10 10 10 10 0 25 50 75 100 125 150
o
IC, Collector Current [A] TC, Case Temprature [ C]

Safe Operating Area

1
10
IC, Collector Current [A]

100us

0
10 1ms

10ms

100ms
-1
10 DC

o
TA = 25 C
-2
10
0 1 2
10 10 10
VCE, Collector-Emitter Voltage [V]

Feb. 2012 Wing On STS REV.A2

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