TC1413/TC1413N: 3A High-Speed MOSFET Drivers
TC1413/TC1413N: 3A High-Speed MOSFET Drivers
TC1413/TC1413N: 3A High-Speed MOSFET Drivers
Inverting Non-Inverting
NC = No Internal Connection
VDD
TC1413
Inverting
Outputs
300 mV
Output
Non-Inverting
Input Outputs
TC1413N
Effective 4.7V
Input C = 10 pF
GND
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25°C, with 4.5V VDD 16V.
Parameters Sym. Min. Typ. Max. Units Conditions
Input
Logic ‘1’, High Input Voltage VIH 2.0 — — V
Logic ‘0’, Low Input Voltage VIL — — 0.8 V
Input Current IIN -1.0 — 1.0 µA 0V VIN VDD, TA = +25°C
-10 — 10 -40°C TA +85°C
Output
High Output Voltage VOH VDD – 0.025 — — V DC Test
Low Output Voltage VOL — — 0.025 V DC Test
Output Resistance RO — 2.7 4.0 VDD = 16V, IO = 10 mA,
TA = +25°C
— 3.3 5.0 0°C TA +70°C
— 3.3 5.0 -40°C TA +85°C
Peak Output Current IPK — 3.0 — A VDD = 16V
Latch-Up Protection IREV — 0.5 — A Duty cycle 2%, t 300 µs,
Withstand Reverse Current VDD = 16V
Switching Time (Note 1)
Rise Time tR — 20 28 ns TA = +25°C
— 22 33 0°C TA +70°C
— 24 33 -40°C TA +85°C, Figure 4-1
Fall Time tF — 20 28 ns TA = +25°C
— 22 33 0°C TA +70°C
— 24 33 -40°C TA +85°C, Figure 4-1
Delay Time tD1 — 35 45 ns TA = +25°C,
— 40 50 0°C TA +70°C
— 40 50 -40°C TA +85°C, Figure 4-1
Delay Time tD2 — 35 45 ns TA = +25°C
— 40 50 0°C TA +70°C
— 40 50 -40°C TA +85°C, Figure 4-1
Power Supply
Power Supply Current IS — 0.5 1.0 mA VIN = 3V, VDD = 16V
— 0.1 0.15 VIN = 0V
Note 1: Switching times ensured by design.
500 500
TA = +25°C VSUPPLY = 16V
VIN = 3V
400 400
VIN = 3V
ISUPPLY (µA)
ISUPPLY (µA)
300 300
200 200
0 0
4 6 8 10 12 14 16 -40 -20 0 20 40 60 80
VDD (V) TEMPERATURE (°C)
FIGURE 2-1: Quiescent Supply Current FIGURE 2-4: Quiescent Supply Current
vs. Supply Voltage. vs. Temperature.
1.6 1.6
TA = +25°C VSUPPLY = 16V
1.5 1.5
VIH VIH
VTHRESHOLD (V)
VTHRESHOLD (V)
1.4 1.4
1.3 1.3
1.1
1.1
4 6 8 10 12 14 16 -40 -20 0 20 40 60 80
VDD (V) TEMPERATURE (°C)
FIGURE 2-2: Input Threshold vs. Supply FIGURE 2-5: Input Threshold vs.
Voltage. Temperature.
9 9
8 8
7 7
TA = +85°C TA = +85°C
RDS-ON (Ohms)
RDS-ON (Ohms)
6 6
5 TA = +25°C 5
TA = +25°C
4 4
3 3
TA = -40°C
2 2
TA = -40°C
1 1
4 6 8 10 12 14 16 4 6 8 10 12 14 16
VDD (V) VDD (V)
FIGURE 2-3: High State Output FIGURE 2-6: Low State Output
Resistance vs. Supply Voltage. Resistance vs. Supply Voltage.
70 70
CLOAD = 1800 pF CLOAD = 1800 pF
60 60
50 50
tRISE (nsec)
tFALL (nsec)
TA = +85°C
40 40 TA = +85°C
TA = +25°C TA = +25°C
30 30
20 20
TA = -40°C TA = -40°C
10 10
4 6 8 10 12 14 16 4 6 8 10 12 14 16
VDD (V) VDD (V)
FIGURE 2-7: Rise Time vs. Supply FIGURE 2-10: Fall Time vs. Supply
Voltage. Voltage.
110 100
CLOAD = 1800 pF CLOAD = 1800 pF
100 90
90 80
80 TA = +85°C
70 TA = +85°C
tD1 (nsec)
70 tD2 (nsec)
60
60 TA = +25°C TA = +25°C
50
50
40
40
TA = -40°C 30 TA = -40°C
30
20 20
4 6 8 10 12 14 16 4 6 8 10 12 14 16
VDD (V) VDD (V)
FIGURE 2-8: Propagation Delay vs. FIGURE 2-11: Propagation Delay vs.
Supply Voltage. Supply Voltage.
40 35
TA = +25°C TA = +25°C
tRISE
VDD = 16V 34 VDD = 16V tD2
Propagation Delays (nsec)
30 tFALL
33
tRISE, tFALL (nsec)
tD1
32
20
31
30
10
29
0 28
0 1000 2000 3000 4000 5000 0 1000 2000 3000 4000 5000
CLOAD (pF) CLOAD (pF)
FIGURE 2-9: Rise and Fall Times vs. FIGURE 2-12: Propagation Delays vs.
Capacitive Load. Capacitive Load.
+5V
90%
Input
VDD = 16V
10%
0V
tD1 tD2
tF tR
1.0 µF 0.1 µF VDD
90% 90%
1, 8
Output
2 6, 7 10% 10%
Input Output 0V
CL = 1800 pF
Inverting Driver
TC1413 TC1413
TC1413N
+5V
90%
Input
4, 5 10%
0V
Input: 100 kHz, VDD 90%
square wave, tD1 90% tD2
tRISE = tFALL 10 ns Output tR tF
0V 10% 10%
Non-Inverting Driver
TC1413N
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OR
TC1413
CPA256
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Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over
to the next line, thus limiting the number of available characters for customer-specific
information.
TC1413C
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OR
TC1413
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1413E
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1RWH For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D A
N B
E1
NOTE 1
1 2
TOP VIEW
C A A2
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A1
e eB
8X b1
8X b
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1RWH For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DATUM A DATUM A
b b
e e
2 2
e e
Units INCHES
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e .100 BSC
Top to Seating Plane A - - .210
Molded Package Thickness A2 .115 .130 .195
Base to Seating Plane A1 .015 - -
Shoulder to Shoulder Width E .290 .310 .325
Molded Package Width E1 .240 .250 .280
Overall Length D .348 .365 .400
Tip to Seating Plane L .115 .130 .150
Lead Thickness c .008 .010 .015
Upper Lead Width b1 .040 .060 .070
Lower Lead Width b .014 .018 .022
Overall Row Spacing § eB - - .430
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. § Significant Characteristic
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed .010" per side.
4. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
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http://www.microchip.com/packaging
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Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
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