Gamma Voltage Generated IC With Built-In DAC: Datasheet Datasheet
Gamma Voltage Generated IC With Built-In DAC: Datasheet Datasheet
Gamma Voltage Generated IC With Built-In DAC: Datasheet Datasheet
Features
Single-chip Design means Fewer Components
Built in 10bit DAC (14ch)
Built in DAC Output Buffer Amplifier (14ch)
Built in Operation Amplifier (1ch) for HVDD
I2C Interface ( SDA, SCL )
Thermal Shutdown Circuit
Under-voltage Lockout Protection Circuit
Power ON Reset Circuit
Input Tolerant ( SDA, SCL, EN )
VQFN032V5050
5.00mm x 5.00mm x 1.00mm
Applications
It may be used with TFT-LCD panels, such as big screen
and high resolution LCD televisions.
○Product structure:Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays
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Block Diagram
VCC
VDD
GND 25 16 GND
VDD
UVLO VREF
(VCC, REFIN, VDD) VCC
TSD Power ON
Reset
OP-AMP
1 2 3 4 5 6 7 8
EN DGND VDD SDA SCL INP INN HVDD
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Pin Configuration
TOP VIEW
24 23 22 21 20 19 18 17
25 16
26 15
27 14
28 13
29 12
30 11
31 10
32 9
1 2 3 4 5 6 7 8
Pin Description
PIN PIN
Pin name Function Pin name Function
No. No.
1 EN VDAC enable pin 17 VCC Power supply input
2 DGND Logic , Protection circuit GND input 18 DACGND GND input for DAC
3 VDD Logic power supply input 19 VDD Logic power supply input
4 SDA Serial data input pin 20 FB Feedback pin
5 SCL Serial clock input pin 21 REFIN DAC reference voltage input pin
6 INP Amplifier + input pin 22 VDAC DAC voltage output
7 INN Amplifier – input pin 23 DACGND GND input for DAC
8 HVDD HVDD amplifier output pin 24 VCC Power supply input
9 OUT6 Gamma output pin 25 GND Buffer amplifier GND input
10 OUT5 Gamma output pin 26 OUT13 Gamma output pin
11 OUT4 Gamma output pin 27 OUT12 Gamma output pin
12 OUT3 Gamma output pin 28 OUT11 Gamma output pin
13 OUT2 Gamma output pin 29 OUT10 Gamma output pin
14 OUT1 Gamma output pin 30 OUT9 Gamma output pin
15 OUT0 Gamma output pin 31 OUT8 Gamma output pin
16 GND Buffer amplifier GND input 32 OUT7 Gamma output pin
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Electrical Characteristics – continued (Unless otherwise noted, Ta25°C, VDD=3.3V, VCC=15.0V, VREFIN=5.0V )
Limit
Parameter Symbol Unit Condition
MIN TYP MAX
【 Control Signal 1 (EN) 】
Threshold Voltage 1 VENth1 0.8 - 1.7 V
Threshold Voltage 2 VENth2 0.6 - 1.7 V VDD=2.5V
Input Sinking Current IEN 10.0 16.5 23.1 µA VEN=3.3V
【 Control Signal 2 (SDA, SCL) 】
Threshold Voltage 1 Vth1 0.8 - 1.7 V
Threshold Voltage 2 Vth2 0.6 - 1.7 V VDD=2.5V
MIN Output Voltage VOCL - - 0.4 V ISDA=3mA
【 Operation Amplifier 】
Input Offset Voltage VOFF-HV -15 - +15 mV
Input Bias Current IB-HV -1.2 0.0 +1.2 µA
Sink Current Capability during VINP = 7V, INN = HVDD setting,
IooHV - -100 -66 mA
(Nch side) VHVDD=8V input
Source Current Capability during VINP = 7V, INN = HVDD setting,
IoiHV 66 100 - mA
(Pch side) VHVDD=6V input
VINP = 7V, INN = HVDD setting
Load Stability ⊿VO-HV - 10 70 mV
IO=-50mA to +50mA
MAX Output Voltage VOH-HV VCC-0.20 VCC-0.10 - V IO=-30mA
MIN Output Voltage VOL-HV - 0.10 0.20 V IO=30mA
Slew Rate SRHV 1 4 - V/µsec HVDD=No-load
【 Whole Device 】
VDD under-voltage Protection
VDDUV 1.7 1.9 2.1 V VDD falling voltage
Voltage
VDD under-voltage Protection
VDDHY - 100 - mV
Hysteresis Voltage
VCC under-voltage Protection
VCCUV 2.3 2.6 2.9 V VCC falling voltage
Voltage
VCC under-voltage Protection
VCCHY - 400 - mV
Hysteresis Voltage
REFIN under-voltage
VREFUV 1.7 1.9 2.1 V REFIN falling voltage
Protection Voltage
REFIN under-voltage
VREFHY - 100 - mV
Protection Hysteresis Voltage
No-load output,
VDD Circuit Current ICCL 0.31 0.51 0.71 mA
DAC initial value setting
No-load output,
VCC Circuit Current ICCH 4.4 8.6 13.2 mA
DAC initial value setting
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EN
VCC
VDD
VREF
VDAC
REFIN C12
C11 R11
FB
R12
R11 R12
VDAC 0.50 [V ]
R12
10[kΩ] to 100[kΩ] is a recommended range for the sum of setting value of R11,R12. If the setting is below 10[kΩ],
consumption current may increase, thus resulting in degraded power efficiency. If the setting exceeds 100[kΩ], offset
voltage is likely increase due to the input bias current.
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・DAC
The DAC LOGIC converts the 10-bit digital signal read to the register to a voltage.
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start Device Address Write Ackn Start DAC address pointer. R6-R4 have no meaning Ackn DAC(pointer) MSbyte. D15-D10 have no meaning Ackn DAC(pointer) LSbyte. Ackn Stop
SCL
SDA_in A6 A5 A4 A3 A2 A1 A0 R/W Ackn WS R6 R5 R4 R3 R2 R1 R0 Ackn D15 D14 D13 D12 D11 D10 D9 D8 Ackn D7 D6 D5 D4 D3 D2 D1 D0 Ackn
Device_Out A6 A5 A4 A3 A2 A1 A0 R/W Ackn WS R6 R5 R4 R3 R2 R1 R0 Ackn D15 D14 D13 D12 D11 D10 D9 D8 Ackn D7 D6 D5 D4 D3 D2 D1 D0 Ackn
SCL ・・・
SDA_in A6 A5 A4 A3 A2 A1 A0 R/W Ackn WS R6 R5 R4 R3 R2 R1 R0 Ackn D15 D14 D13 D12 D11 D10 D9 D8 Ackn D7 D6 D5 D4 D3 D2 D1 D0 Ackn ・・・
Device_Out A6 A5 A4 A3 A2 A1 A0 R/W Ackn WS R6 R5 R4 R3 R2 R1 R0 Ackn D15 D14 D13 D12 D11 D10 D9 D8 Ackn D7 D6 D5 D4 D3 D2 D1 D0 Ackn ・・・
DAC(3) MSbyte. D15-D10 have no meaning Ackn DAC(3) LSbyte. Ackn Stop
・・・
・Device address
Device addresses A6 to A0 are specific to the IC and should be set as follows: (A6 to A0) = 1110110.
The lower 4 bits (R3 to R0) of the second byte are used to store the register address.
R6 to R4 should be set to 0 as usual.
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・Command interface
Use I2C BUS for command interface with host. Writing or reading by specifying 1 byte select address, along with slave
address. I2C BUS Slave mode format is shown below.
S : Start condition
Slave Address : After slave mode(7bit), with read mode (H) or light mode (L), send 8 bit data in all.
(MSB first))
A : Acknowledge
Added acknowledge bit per byte in sending and receiving data.
If the data is sent/ received properly, “L” is send/ received.
Sending/ Receiving ”H” means lack of acknowledge.
Select Address : Use 1 byte select address.
DATA : Data byte. Sending/ Receiving data. (MSB first).
P : Stop condition
The case where writing 3FCh from DAC0 to DAC3 (Multi mode)
Register0 Register0 Register1 Register1 to 3
S Slave Address A Select Address A A A A A P
DATA0 DATA1 DATA0 DATA0,DATA1
(Ex.) ECh 00h 03h FCh 03h
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・I2C Timing
tR tHIGH
tF
SCL
tLOW
tHD:STA tSU;DAT
tPD tHD;DAT
SDA
(IN)
tBUF
tDH
SDA
(OUT)
SCL
SDA
tl
S:START bit
S P P:STOP bit
Figure 5. Timing
・Timing regulation
FAST mode
Parameter Symbol Unit
MIN TYP MAX
SCL Frequency fSCL - - 400 kHz
SCL”H” time tHIGH 0.6 - - µs
SCL”L” time tLOW 1.2 - - µs
Rise time tR - - 0.3 µs
Fall time tF - - 0.3 µs
Start condition holding time tHD;STA 0.6 - - µs
Start condition setup time tSU;STA 0.6 - - µs
SDA Holding time tHD;DAT 100 - - ns
SDA Setup time tSU;DAT 100 - - ns
Acknowledge delay time tPD - - 0.9 µs
Acknowledge holding time tDH - 0.1 - µs
Stop condition setup time tSU;STO 0.6 - - µs
BUS open time tBUF 1.2 - - µs
Noise spike width tl - 0.1 - µs
The relation between buffer output voltage (OUT0 to OUT13) and DAC setting value is shown below.
Buffer output terminals OUT0 to OUT13 output after UVLO release of VCC. While UVLO detection, the output is HiZ.
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Only using an amplifier, voltage is able to set by resistor, shown below Figure 7.
・ For the reference side, use the regulator output type of power supply.
・ It is recommended to set the RCOM1,RCOM2 in the range of 10kΩ to 100kΩ.
Setting them to not more than 10kΩ may increase current consumption, thus resulting in degraded power efficiency.
Setting them to not less than 100kΩ may result in higher offset voltage due to the input bias current of 0.1µA(TYP).
・ In case connecting HVDD with low ESR capacitor, damping is needed with a resistor (R32) to keep phase margin.
Use the buffer type if HVDD is not used, and ground the INP pin.
Reference voltage
OUT5
RCOM1
INP INP
RCOM2
INN INN
R31
HVDD HVDD
C31
C32
Figure 6. Use as output for DAC Figure 7. Use amplifier only by having resistor divider
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Sequence image
1. EN=High before VCC power supply turns ON
VCC(15.6V)
VDAC = REFIN
VDD(3.3V) EN
DAC Control
(DAC output)OUT0
OUT0~13
to OUT13
VCC(15.6V)
HVDD
(In case using INP as VCC resistor divider)
VDAC = REFIN
VDD(3.3V)
DAC Control EN
(DAC output)OUT0
OUT0~13
to OUT13
VCC(15.6V)
HVDD
(In case using INP as VCC resistor divider)
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Operational Notes
3. Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
5. Thermal Consideration
Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may
result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, increase the
board size and copper area to prevent exceeding the maximum junction temperature rating.
7. Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may
flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring,
and routing of connections.
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P B C
P+ P+ P+ N P P+
N N N N Parasitic N N N
E
Elements
Parasitic
P Substrate P Substrate
Elements
GND GND GND GND
Parasitic Parasitic N Region
Elements Elements close-by
Figure 10. Example of monolithic IC structure
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Ordering Information
B D 8 1 0 1 0 M U V - E2
Marking Diagram
BD LOT Number
8 1 0 1 0
1PIN MARK
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Revision History
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Notice
Precaution on using ROHM Products
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Datasheet
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