NTTFS4C25N

Power MOSFET
30 V, 27 A, Single N−Channel, m8FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses http://onsemi.com
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant V(BR)DSS RDS(on) MAX ID MAX
Applications 17 mW @ 10 V
• DC−DC Converters 30 V 27 A
26.5 mW @ 4.5 V
• Power Load Switch
• Notebook Battery Management
N−Channel MOSFET
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit D (5−8)

Drain−to−Source Voltage VDSS 30 V

Gate−to−Source Voltage VGS ±20 V
Continuous Drain TA = 25°C ID 7.7 A
G (4)
Current RqJA (Note 1)
TA = 85°C 5.8
Power Dissipation RqJA TA = 25°C PD 1.63 W S (1,2,3)
(Note 1)
Continuous Drain TA = 25°C ID 12.2 A
Current RqJA ≤ 10 s MARKING DIAGRAM
(Note 1) TA = 85°C 9.1 1
1 S D
Power Dissipation TA = 25°C PD 4.1 W
WDFN8 S 4C25 D
RqJA ≤ 10 s (Note 1) Steady
State (m8FL) S AYWWG D
Continuous Drain TA = 25°C ID 5.0 A CASE 511AB G G D
Current RqJA (Note 2)
TA = 85°C 3.8
Power Dissipation TA = 25°C PD 0.69 W 4C25 = Specific Device Code
RqJA (Note 2) A = Assembly Location
Continuous Drain TC = 25°C ID 27 A Y = Year
Current RqJC (Note 1) WW = Work Week
TC = 85°C 20
G = Pb−Free Package
Power Dissipation TC = 25°C PD 20.2 W
RqJC (Note 1) (Note: Microdot may be in either location)

Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 81 A

Operating Junction and Storage Temperature TJ, −55 to °C ORDERING INFORMATION
Tstg +150
Device Package Shipping†
Source Current (Body Diode) IS 17 A
NTTFS4C25NTAG WDFN8 1500 / Tape &
Drain to Source dV/dt dV/dt 6.0 V/ns
(Pb−Free) Reel
Single Pulse Drain−to−Source Avalanche Energy EAS 13 mJ
(TJ = 25°C, VDD = 50 V, VGS = 10 V, NTTFS4C25NTWG WDFN8 5000 / Tape &
IL = 16 Apk, L = 0.1 mH, RG = 25 W) (Note 3) (Pb−Free) Reel
Lead Temperature for Soldering Purposes TL 260 °C †For information on tape and reel specifications,
(1/8″ from case for 10 s) including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Stresses exceeding Maximum Ratings may damage the device. Maximum Brochure, BRD8011/D.
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 11 Apk, EAS = 6 mJ.

© Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:

October, 2012 − Rev. 0 NTTFS4C25N/D
 NTTFS4C25N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 6.2
Junction−to−Ambient – Steady State (Note 4) RqJA 76.7
°C/W
Junction−to−Ambient – Steady State (Note 5) RqJA 210
Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 30.8
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V
Drain−to−Source Breakdown Voltage V(BR)DSSt VGS = 0 V, ID(aval) = 4.4 A, 34
V
(transient) Tcase = 25°C, ttransient = 100 ns

Drain−to−Source Breakdown Voltage V(BR)DSS/ 15.3

mV/°C
Temperature Coefficient TJ
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C 1.0
VDS = 24 V mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.3 2.2 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ 4.5 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 10 A 13 17
mW
VGS = 4.5 V ID = 9 A 21 26.5
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 23 S
Gate Resistance RG TA = 25°C 1.0 W
CHARGES AND CAPACITANCES
Input Capacitance CISS 500
Output Capacitance COSS VGS = 0 V, f = 1 MHz, VDS = 15 V 295 pF
Reverse Transfer Capacitance CRSS 85
Capacitance Ratio CRSS/CISS VGS = 0 V, VDS = 15 V, f = 1 MHz 0.170
Total Gate Charge QG(TOT) 5.1
Threshold Gate Charge QG(TH) 0.9
nC
Gate−to−Source Charge QGS VGS = 4.5 V, VDS = 15 V; ID = 20 A 1.7
Gate−to−Drain Charge QGD 2.7
Gate Plateau Voltage VGP 3.3 V
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 20 A 10.3 nC
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time td(ON) 8.0
Rise Time tr VGS = 4.5 V, VDS = 15 V, 32
ns
Turn−Off Delay Time td(OFF) ID = 10 A, RG = 3.0 W 10
Fall Time tf 3.0
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.

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 NTTFS4C25N

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time td(ON) 4.0
Rise Time tr VGS = 10 V, VDS = 15 V, 25
ns
Turn−Off Delay Time td(OFF) ID = 15 A, RG = 3.0 W 13
Fall Time tf 2.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.87 1.2
V
IS = 10 A TJ = 125°C 0.75
Reverse Recovery Time tRR 18.2
Charge Time ta VGS = 0 V, dIS/dt = 100 A/ms, 9.8 ns
Discharge Time tb IS = 30 A 8.4
Reverse Recovery Charge QRR 5.7 nC
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.

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 NTTFS4C25N

TYPICAL CHARACTERISTICS

40 40
4.5 V to 10 V VDS = 5 V
4.2 V
35
4.0 V
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

30 30
3.8 V
25
3.6 V
20 20
3.4 V
15
3.2 V
TJ = 125°C
10 10
3.0 V
5 TJ = 25°C
2.8 V
TJ = 25°C TJ = −55°C
0 0
0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.052 ID = 30 A 0.045 TJ = 25°C

0.042
0.035

0.032 VGS = 4.5 V

0.025
0.022

0.015 VGS = 10 V
0.012

0.002 0.005
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 10 20 30 40 50
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage

1.7 10000
ID = 30 A VGS = 0 V
1.6
VGS = 10 V TJ = 150°C
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE

1.5
1000
IDSS, LEAKAGE (nA)

1.4 TJ = 125°C
1.3
1.2 100
TJ = 85°C
1.1
1.0
10
0.9
0.8
0.7 1
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage

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 NTTFS4C25N

TYPICAL CHARACTERISTICS

800 10

VGS, GATE−TO−SOURCE VOLTAGE (V)

VGS = 0 V QT
700 TJ = 25°C
8
Ciss
C, CAPACITANCE (pF)

600

500 6
400 Coss
Qgs Qgd
300 4
TJ = 25°C
200 VDD = 15 V
Crss 2
VGS = 10 V
100 ID = 30 A
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100 20
IS, SOURCE CURRENT (A) 18 VGS = 0 V
tf 16
tr 14
10
t, TIME (ns)

12
td(on)
10
td(off)
8 TJ = 125°C TJ = 25°C
1
6
VDD = 15 V 4
ID = 15 A
VGS = 10 V 2
0.1 0
1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
100 6
SOURCE AVALANCHE ENERGY (mJ)
EAS, SINGLE PULSE DRAIN−TO−

5 ID = 11 A
ID, DRAIN CURRENT (A)

10 10 ms
4
100 ms

1 1 ms 3
0 V < VGS < 10 V 10 ms
Single Pulse 2
TC = 25°C
0.1
RDS(on) Limit dc 1
Thermal Limit
Package Limit
0.01 0
0.01 0.1 1 10 100 25 50 75 100 125 150
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.
Safe Operating Area Starting Junction Temperature

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 NTTFS4C25N

TYPICAL CHARACTERISTICS

100
Duty Cycle = 50%

20%
10 10%
R(t) (°C/W)

5%

2%
1%
1

Single Pulse
0.1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
Figure 13. Thermal Response

30 100

25
ID, DRAIN CURRENT (A)

20
TA = 85°C TA = 25°C
GFS (S)

15 10

10

0 1
0 5 10 15 20 25 30 35 40 1.E−08 1.E−07 1.E−06 1.E−05 1.E−04 1.E−03
ID (A) PULSE WIDTH (SECONDS)
Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics

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 NTTFS4C25N

PACKAGE DIMENSIONS

WDFN8 3.3x3.3, 0.65P

CASE 511AB
ISSUE D

2X
NOTES:
0.20 C 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
B 2X
PROTRUSIONS OR GATE BURRS.
D1 MILLIMETERS INCHES
8 7 6 5 0.20 C
DIM MIN NOM MAX MIN NOM MAX
A 0.70 0.75 0.80 0.028 0.030 0.031
4X A1 0.00 −−− 0.05 0.000 −−− 0.002
E1 E q b 0.23 0.30 0.40 0.009 0.012 0.016
c 0.15 0.20 0.25 0.006 0.008 0.010
D 3.30 BSC 0.130 BSC
c D1 2.95 3.05 3.15 0.116 0.120 0.124
1 2 3 4
A1 D2 1.98 2.11 2.24 0.078 0.083 0.088
TOP VIEW E 3.30 BSC 0.130 BSC
E1 2.95 3.05 3.15 0.116 0.120 0.124
0.10 C E2 1.47 1.60 1.73 0.058 0.063 0.068
E3 0.23 0.30 0.40 0.009 0.012 0.016
A C e 0.65 BSC 0.026 BSC
6X G 0.30 0.41 0.51 0.012 0.016 0.020
0.10 C e SEATING
K 0.65 0.80 0.95 0.026 0.032 0.037
PLANE
L 0.30 0.43 0.56 0.012 0.017 0.022
SIDE VIEW DETAIL A DETAIL A L1 0.06 0.13 0.20 0.002 0.005 0.008
M 1.40 1.50 1.60 0.055 0.059 0.063
q 0_ −−− 12 _ 0_ −−− 12 _
8X b
0.10 C A B
SOLDERING FOOTPRINT*
0.05 C 8X
4X L e/2 0.42 0.65 4X
1 4 PITCH 0.66
PACKAGE
OUTLINE
K
E2
E3 M
8 5
L1 3.60
G D2
BOTTOM VIEW 0.57 2.30
0.75

0.47 2.37
3.46
DIMENSION: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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