EEE6403 - MOS Device

Short Channel Effects in
MOSFETs
Presented By: Presented To:

Kazi Hassan Shazib Dr. Ashoke Kumar Sen Gupta
ID: 22MEE005 Professor,
Session: 2022-23 Department of EEE, CUET.
1
Contents
Introduction to MOSFET
Types Depending on Channel Length
Why Short-Channel MOSFETs?
Problems with Long- Channel Theory for Short-Channel MOSFET
Short Channel Effect
Conclusion
References
2
Introduction to MOSFET
A metal oxide semiconductor field effect
transistor or MOSFET is a type of FET where
the voltage determines the
conductivity of the device.
The simplest way to describe a MOSFET is,
two back-to-back diodes that exist in series
between drain and source with a Gate on top
of it separated by a dielectric. The back-to-
back Diode configuration prevents the current
flow with no applied voltage at the gate.
Applied voltage on the gate side can control
the conductivity of the device.
Fig.1: A basic MOSFET structure[1]
Ref: U. A Arefín, Md. Saidul Islam, and Md. Saddam Hossen, “Simulation & Analysis of Characteristics of Quantum-Well FET,” Researchgate, May
2015, doi: 10.13140/RG.2.1.4439.4409. 3
Types Depending on Channel Length
Long-Channel MOSFETS: Traditionally

developed MOSFETs. Typically channel
Two lengths are greater than about 10 µm.
Short-Channel MOSFETS: Can define

types: short channel as when length is comparable
to depletion region sum of source and drain
side.
4
Why Short-Channel MOSFETs?
Reduced channel length =

Less L, Higher Device ID ∝ 1/L; So increases Less distance for carrier to
Density in ICs. Drain current. get across = Higher
Operating Frequency.
5
Problems with Long- Channel Theory for
Short-Channel MOSFET
Long-channel theory predicts drain currents increase with higher drain
voltages when gate voltage exceeds threshold voltage as Mobile electrons in
the channel move faster with the increasing field along the channel.
High drain voltages lead to a "pinch-off" condition where the channel
mobile-carrier density is zero near the drain.
The channel current must, however, be constant and therefore the pinch-off
condition requires an infinite carrier velocity to maintain a constant current
with a vanishing carrier density.
6
Short-Channel Effect
A MOSFET is considered to be short when the channel length 'L' is the same
order of magnitude as the depletion-layer widths (Sum of both Source and Drain
side). Due to drain bias When the Gate channel length <<1µm, short channel
effect becomes important.
In case of Short-Channel Devices, we see a reduced Threshold Voltage(V T). Due
to 3 major Effects:
1. Source/Drain Charge Sharing
2. Drain-Induced Barrrier Lowering
3. Subsurface Punchthrough.
(a) (b)
Fig. 2: (a)Long-Channel MOSFET, (b) Short Channel MOSFET.[1]
Ref: U. A Arefín, Md. Saidul Islam, and Md. Saddam Hossen, “Simulation & Analysis of Characteristics of Quantum-Well FET,”
Researchgate, May 2015, doi: 10.13140/RG.2.1.4439.4409. 7
Short-Channel Effect(Cont.)
Source/Drain Charge Sharing: Fig. 3 represents a
short-channel MOSFET biased with VS = VB, VD
is small (close to VS), and VG biased at the
threshold voltage. At threshold voltage, a fixed
substrate-depletion charge is accumulated under
the gate region. The light blue part shows the
depletion region.
There are red rectangular-charge region that are
also parts of the depletion regions of the source-
and the drain-pn junctions. No Voltage required to
deplete the mobile charge of the triangular region. Fig. 3: The depletion charge at threshold with
Less VG needed to invert the silicon surface. charge sharing .[2]
Ref: V. K. Khanna, “Short-Channel Effects in MOSFETs,” in Nanoscience and technology, 2016, pp. 73–93. doi: 10.1007/978-81-322-
3625-2_5. 8
Drain-Induced Barrier Lowering: Refers to the
influence of the drain voltage on ΦS the barrier
to electron flow at the np junction near the (a)
oxide surface at the source.
In short channel MOSFET, sufficiently high
drain voltage can "pull down" the electron
barrier. (b)
So, when only the gate was supposed to

control the barrier, the Drain also starts to
control it. (c)
In sub-threshold we’ll have a higher current Fig. 4: (a) LCMOSFET & SCMOSFET, (b) Band Diagram
at no Bias, (c) Bending while high drain current.
flowing.
9
Subsurface Punchthrough: Like drain-
induced barrier lowering, subsurface
this also refers to the influence of the
drain voltage on the source np-junction
electron barrier.
An extension to DIBL. Occurs if we
keep increasing the Drain bias. The
drain-substrate depletion region reaches
the source-substrate depletion region.
Leading to undesirable, typically
destructive, drain currents. Fig. 5: Drain voltage VD is successively increased from
(a) to (c).[3]
Ref: R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits. John Wiley & Sons, 2002.[Online].Available:http://books.google.ie/books?
id=s3iaEAAAQBAJ&printsec=frontcover&dq=Device+Electronics+for+Integrated+Circuits+by+Ricchard+S.+Muller&hl=&cd=2&source=gbs_api 10
Conclusion
Nowdays, the short channel MOSFET is used in most electronic
devices.
For Short-channel MOSFET. The Short channel effects are a
major part of discussion.
That are other effects also, such as, surface scattering, impact
ionization, Hot electron effects that may be part o of the
discussion for short-channel MOSFET.
11
References
1) U. A Arefín, Md. Saidul Islam, and Md. Saddam Hossen, “Simulation & Analysis of
Characteristics of Quantum-Well FET,” Researchgate, May 2015, doi:
10.13140/RG.2.1.4439.4409.
2) V. K. Khanna, “Short-Channel Effects in MOSFETs,” in Nanoscience and technology, 2016, pp.
73–93. doi: 10.1007/978-81-322-3625-2_5.
3) R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits. John Wiley & Sons,
2002.[Online].Available:http://books.google.ie/books?
id=s3iaEAAAQBAJ&printsec=frontcover&dq=Device+Electronics+for+Integrated+Circuits+by
+Ricchard+S.+Muller&hl=&cd=2&source=gbs_api
12
Thank You
Any Questions?
13

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Short Channel Effects in

Presented By: Presented To:

Types Depending on Channel Length

Why Short-Channel MOSFETs?

Problems with Long- Channel Theory for Short-Channel MOSFET

Short Channel Effect

Long-Channel MOSFETS: Traditionally

Two lengths are greater than about 10 µm.

Short-Channel MOSFETS: Can define

Reduced channel length =

So, when only the gate was supposed to

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