Freescale Semiconductor Document Number: MMRF1016H

Technical Data Rev. 0, 7/2014

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET MMRF1016HR5
This 600 W RF power LDMOS transistor is designed primarily for wideband
RF power amplifiers with frequencies up to 500 MHz. This device is unmatched
and is suitable for use in high power military applications.
 Typical DVB--T OFDM Performance: VDD = 50 Vdc, IDQ = 2600 mA, 2--500 MHz, 600 W, 50 V
Pout = 125 W Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, BROADBAND
Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF. RF POWER MOSFET
Power Gain — 25 dB
Drain Efficiency — 28.5%
ACPR @ 4 MHz Offset — --61 dBc @ 4 kHz Bandwidth
 Typical Pulse Performance: VDD = 50 Vdc, IDQ = 2600 mA,
Pout = 600 W Peak, f = 225 MHz, Pulse Width = 100 sec, Duty
Cycle = 20%
Power Gain — 25.3 dB
Drain Efficiency — 59%
 Capable of Handling 10:1 VSWR @ 50 Vdc, 225 MHz, 600 W Peak Power,
Pulse Width = 100 sec, Duty Cycle = 20%
Features NI--1230H--4S

 Characterized with Series Equivalent Large--Signal Impedance Parameters PART IS PUSH--PULL

 CW Operation Capability with Adequate Cooling
 Qualified Up to a Maximum of 50 VDD Operation
 Integrated ESD Protection
 Designed for Push--Pull Operation
Gate A 3 1 Drain A
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
Gate B 4 2 Drain B

(Top View)
Note: The backside of the package is the
source terminal for the transistors.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +120 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Storage Temperature Range Tstg -- 65 to +150 C
Case Operating Temperature TC 150 C
Operating Junction Temperature (1,2) TJ 225 C

Table 2. Thermal Characteristics

Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case RJC C/W
Case Temperature 99C, 125 W CW, 225 MHz, 50 Vdc, IDQ = 2600 mA 0.20
Case Temperature 64C, 610 W CW, 352.2 MHz, 50 Vdc, IDQ = 150 mA 0.14
Case Temperature 81C, 610 W CW, 88--108 MHz, 50 Vdc, IDQ = 150 mA 0.16
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.

 Freescale Semiconductor, Inc., 2014. All rights reserved. MMRF1016HR5

RF Device Data
Freescale Semiconductor, Inc. 1
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) A
Charge Device Model (per JESD22--C101) IV

Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics (1)

Gate--Source Leakage Current IGSS — — 10 Adc

(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage V(BR)DSS 120 — — Vdc
(ID = 150 mA, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current IDSS — — 50 Adc

(VDS = 50 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current IDSS — — 2.5 mA

(VDS = 100 Vdc, VGS = 0 Vdc)

On Characteristics
Gate Threshold Voltage (1) VGS(th) 1 1.65 3 Vdc
(VDS = 10 Vdc, ID = 800 Adc)
Gate Quiescent Voltage (2) VGS(Q) 1.5 2.7 3.5 Vdc
(VDD = 50 Vdc, ID = 2600 mAdc, Measured in Functional Test)

Drain--Source On--Voltage (1) VDS(on) — 0.25 — Vdc

(VGS = 10 Vdc, ID = 2 Adc)

Dynamic Characteristics (1)

Reverse Transfer Capacitance Crss — 1.7 — pF
(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance Coss — 101 — pF

(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance Ciss — 287 — pF
(VDS = 50 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz)

Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 2600 mA, Pout = 125 W Avg., f = 225 MHz, DVB--T
OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ 4 MHz Offset.
Power Gain Gps 24 25 27 dB
Drain Efficiency D 27 28.5 — %
Adjacent Channel Power Ratio ACPR — --61 --59 dBc
Input Return Loss IRL — --18 --9 dB

Typical Performance — 352.2 MHz (In Freescale 352.2 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 600 W CW
Power Gain Gps — 22 — dB
Drain Efficiency D — 68 — %
Input Return Loss IRL — --15 — dB

Typical Performance — 88--108 MHz (In Freescale 88--108 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA,
Pout = 600 W CW
Power Gain Gps — 24.5 — dB
Drain Efficiency D — 74 — %
Input Return Loss IRL — --5 — dB
1. Each side of device measured separately.
2. Measurement made with device in push--pull configuration.

MMRF1016HR5
RF Device Data
2 Freescale Semiconductor, Inc.
 R1
VBIAS B1 L3 L2 VSUPPLY

+ + + L4 + + +
C16 C15 C14 C13 C12 C11 C9 C8 C7 C10 C6 C19 C17 C18 C20 C21 C22 C23 C24 C25

Z9 Z11 Z13 Z15 Z17

Z5 Z7
RF RF
INPUT OUTPUT
Z1 Z2 L1 Z3 Z4 Z19 Z20
DUT C3 C4
J1 J2
Z6 Z8
C1 C2 Z10 Z12 Z14 Z16 Z18 C5

T1 T2

Z1 1.049 x 0.080 Microstrip Z13, Z14 0.224 x 0.253 Microstrip

Z2* 0.143 x 0.080 Microstrip Z15*, Z16* 0.095 x 0.253 Microstrip
Z3* 0.188 x 0.080 Microstrip Z17, Z18 0.052 x 0.253 Microstrip
Z4 0.192 x 0.133 Microstrip Z19 0.053 x 0.080 Microstrip
Z5, Z6 0.418 x 0.193 Microstrip Z20 1.062 x 0.080 Microstrip
Z7, Z8 0.217 x 0.518 Microstrip PCB Arlon CuClad 250GX--0300--55--22, 0.030, r = 2.55
Z9, Z10 0.200 x 0.518 Microstrip * Line length includes microstrip bends
Z11, Z12 0.375 x 0.214 Microstrip

Figure 2. MMRF1016HR5 Test Circuit Schematic

Table 5. MMRF1016HR5 Test Circuit Component Designations and Values

Part Description Part Number Manufacturer
B1 95 , 100 MHz Long Ferrite Bead 2743021447 Fair--Rite
C1 47 pF Chip Capacitor ATC100B470JT500XT ATC
C2, C4 43 pF Chip Capacitors ATC100B430JT500XT ATC
C3 100 pF Chip Capacitor ATC100B101JT500XT ATC
C5 10 pF Chip Capacitor ATC100B7R5CT500XT ATC
C6, C9 2.2 F, 50 V Chip Capacitors C1825C225J5RAC Kemet
C7, C13, C20 10K pF Chip Capacitors ATC200B103KT50XT ATC
C8 220 nF, 50 V Chip Capacitor C1812C224J5RAC Kemet
C10, C17, C18 1000 pF Chip Capacitors ATC100B102JT50XT ATC
C11, C22 0.1 F, 50 V Chip Capacitors CDR33BX104AKYS Kemet
C12, C21 20K pF Chip Capacitors ATC200B203KT50XT ATC
C14 10 F, 35 V Tantalum Capacitor T491D106K035AT Kemet
C15 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet
C16 47 F, 50 V Electrolytic Capacitor 476KXM050M Illinois Cap
C19 2.2 F, Chip Capacitor 2225X7R225KT3AB ATC
C23, C24, C25 470 F 63V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
J1, J2 Jumpers from PCB to T1 & T2 Copper Foil
L1 17.5 nH, 6 Turn Inductor B06T CoilCraft
L2 8 Turn, #20 AWG ID = 0.125 Inductor, Hand Wound Copper Wire
L3 82 nH, Inductor 1812SMS--82NJ CoilCraft
L4* 9 Turn, #18 AWG Inductor, Hand Wound Copper Wire
R1 20 , 3 W Axial Leaded Resistor 5093NW20R00J Vishay
T1 Balun TUI--9 Comm Concepts
T2 Balun TUO--4 Comm Concepts
*L4 is wrapped around R1.

MMRF1016HR5
RF Device Data
Freescale Semiconductor, Inc. 3
 --
B1
C23
C13
C16 C22
C12
C21
+
C11
C20 C25
C24
C15 L3 L4, R1*
-- --
C14
C9 C18

C8 C19
L2 C17
C7
C10 T2
C6 T1

J1 C4 J2

CUT OUT AREA

C1 L1 C2 C5

C3 (on side)

* L4 is wrapped around R1.

Figure 3. MMRF1016HR5 Test Circuit Component Layout

MMRF1016HR5
RF Device Data
4 Freescale Semiconductor, Inc.
 TYPICAL CHARACTERISTICS

1000 100

Ciss

ID, DRAIN CURRENT (AMPS)

Coss TJ = 200_C
C, CAPACITANCE (pF)

100
TJ = 175_C
TJ = 150_C
Measured with 30 mV(rms)ac @ 1 MHz 10
VGS = 0 Vdc
Crss
10

TC = 25_C
1 1
0 10 20 30 40 50 1 10 100
VDS, DRAIN--SOURCE VOLTAGE (VOLTS) VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Note: Each side of device measured separately. Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain--Source Voltage Figure 5. DC Safe Operating Area

26.5 80 64
Gps P3dB = 59.7 dBm (938 W) Ideal
26 70
D, DRAIN EFFICIENCY (%) 62
25.5 60 Pout, OUTPUT POWER (dBm) P2dB = 59.1 dBm (827 W)
Gps, POWER GAIN (dB)

VDD = 50 Vdc, IDQ = 2600 mA 60 P1dB = 53.3 dBm (670 W)

25 f = 225 MHz 50
Actual
Pulse Width = 100 sec
24.5 40 58
Duty Cycle = 20% D
24 30
56
23.5 20
54 VDD = 50 Vdc, IDQ = 2600 mA, f = 225 MHz
23 10
Pulse Width = 12 sec, Duty Cycle = 1%
22.5 0 52
10 100 1000 27 28 29 30 31 32 33 34 35 36 37 38
Pout, OUTPUT POWER (WATTS) PEAK Pin, INPUT POWER (dBm)
Figure 6. Power Gain and Drain Efficiency Figure 7. CW Output Power versus Input Power
versus Output Power

26 28 80

27 Gps 70
25 TC = --30_C

D, DRAIN EFFICIENCY (%)

26 60
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)

50 V 25_C
24
25 50
45 V 85_C
40 V 24 40
23
VDD = 50 Vdc, IDQ = 2600 mA
VDD = 50 Vdc D
23 f = 225 MHz 30
IDQ = 2600 mA 35 V Pulse Width = 100 sec
22 f = 225 MHz
22 Duty Cycle = 20% 20
Pulse Width = 100 sec
Duty Cycle = 20% VDD = 30 V
21 21 10
0 100 200 300 400 500 600 700 10 100 1000
Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK
Figure 8. Power Gain versus Output Power Figure 9. Power Gain and Drain Efficiency
versus Output Power

MMRF1016HR5
RF Device Data
Freescale Semiconductor, Inc. 5
 TYPICAL CHARACTERISTICS — TWO--TONE

--20 --10
VDD = 50 Vdc, IDQ = 2600 mA, f1 = 222 MHz

IMD, INTERMODULATION DISTORTION (dBc)

IMD, INTERMODULATION DISTORTION (dBc)

VDD = 50 Vdc, Pout = 500 W (PEP), IDQ = 2600 mA

f2 = 228 MHz, Two--Tone Measurements Two--Tone Measurements
--30 --20

--40 --30 3rd Order

3rd Order

--50 --40 5th Order

5th Order

--60 --50 7th Order

7th Order

--70 --60
5 10 100 700 0.1 1 10 40
Pout, OUTPUT POWER (WATTS) PEP TWO--TONE SPACING (MHz)
Figure 10. Intermodulation Distortion Figure 11. Intermodulation Distortion
Products versus Output Power Products versus Tone Spacing

26 --20
VDD = 50 Vdc, f1 = 222 MHz, f2 = 228 MHz
INTERMODULATION DISTORTION (dBc)
IDQ = 2600 mA Two--Tone Measurements, 6 MHz Tone Spacing
--25
25.5
Gps, POWER GAIN (dB)

--30
IMD, THIRD ORDER

2300 mA
25
IDQ = 1300 mA
--35
2000 mA
24.5
2600 mA
--40
1800 mA 1800 mA
24
--45
VDD = 50 Vdc, f1 = 222 MHz, f2 = 228 MHz
1300 mA 2000 mA
Two--Tone Measurements, 6 MHz Tone Spacing 2300 mA
23.5 --50
20 100 700 20 100 700
Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP
Figure 12. Two--Tone Power Gain versus Figure 13. Third Order Intermodulation
Output Power Distortion versus Output Power

MMRF1016HR5
RF Device Data
6 Freescale Semiconductor, Inc.
 TYPICAL CHARACTERISTICS — OFDM

100
--20
7.61 MHz
10 --30
--40
1 --50
PROBABILITY (%)

4 kHz BW 4 kHz BW
--60
0.1
ACPR Measured at 4 MHz Offset

(dB)
8K Mode DVB--T OFDM --70
64 QAM Data Carrier Modulation from Center Frequency
0.01 --80
5 Symbols
--90
0.001 8K Mode DVB--T OFDM
--100 64 QAM Data Carrier Modulation, 5 Symbols
--110
0.0001
0 2 4 6 8 10 12 --5 --4 --3 --2 --1 0 1 2 3 4 5
PEAK--TO--AVERAGE (dB) f, FREQUENCY (MHz)
Figure 14. Single--Carrier DVB--T OFDM Figure 15. 8K Mode DVB--T OFDM Spectrum

25.8

ACPR, ADJACENT CHANNEL POWER RATIO (dBc)

--56
IDQ = 2600 mA VDD = 50 Vdc, f = 225 MHz
25.6 8K Mode OFDM, 64 QAM Data Carrier
--58
Modulation, 5 Symbols
25.4 2300 mA
Gps, POWER GAIN (dB)

2000 mA --60
25.2

25 --62
1800 mA IDQ = 1300 mA
24.8
--64
24.6 1300 mA 1800 mA
VDD = 50 Vdc, f = 225 MHz --66
24.4 8K Mode OFDM, 64 QAM Data Carrier 2000 mA
Modulation, 5 Symbols 2300 mA 2600 mA
24.2 --68
30 100 200 20 100 200
Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) AVG.
Figure 16. Single--Carrier DVB--T OFDM Power Figure 17. Single--Carrier DVB--T OFDM ACPR
Gain versus Output Power versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)

45 --56
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)

25_C --30_C
40 85_C --58

ACPR
35 --60
D
30 --62
25_C TC = --30_C
25 Gps --64
85_C
VDD = 50 Vdc, IDQ = 2600 MHz
20 f = 225 MHz, 8K Mode OFDM --66
64 QAM Data Carrier Modulation
5 Symbols
15 --68
30 100 400
Pout, OUTPUT POWER (WATTS) AVG.
Figure 18. Single--Carrier DVB--T OFDM ACPR Power
Gain and Drain Efficiency versus Output Power

MMRF1016HR5
RF Device Data
Freescale Semiconductor, Inc. 7
 TYPICAL CHARACTERISTICS

109

108

MTTF (HOURS)
107

106

105
90 110 130 150 170 190 210 230 250
TJ, JUNCTION TEMPERATURE (C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 50 Vdc, Pout = 125 W Avg., and D = 28.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.

Figure 19. MTTF versus Junction Temperature -- CW

MMRF1016HR5
RF Device Data
8 Freescale Semiconductor, Inc.
 Zsource
f = 225 MHz

Zo = 10 

Zload
f = 225 MHz

VDD = 50 Vdc, IDQ = 2600 mA, Pout = 125 W Avg.

f Zsource Zload
MHz  
225 1.42 + j8.09 4.45 + j1.16
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.

Zload = Test circuit impedance as measured from

drain to drain, balanced configuration.

Input Device Output

Matching + Under -- Matching
Network Test Network

-- +
Z Z
source load

Figure 20. Series Equivalent Source and Load Impedance

MMRF1016HR5
RF Device Data
Freescale Semiconductor, Inc. 9
 COAX1
C18 C16 C17
+ C15
C14 + +
C1 J1

C3
B1
C5
R1 C7
C4 L3 C8
C9

CUT OUT AREA

L1 T1
C10

L4 L2
C2 C6 C11
C12

COAX3

C13 88--108 MHz

COAX2

Figure 21. MMRF1016HR6 Test Circuit Component Layout — 88--108 MHz

Table 6. MMRF1016HR6 Test Circuit Component Designations and Values — 88--108 MHz
Part Description Part Number Manufacturer
B1 95 , 100 MHz Long Ferrite Bead 2743021447 Fair--Rite
C1 6.8 F, 50 V Chip Capacitor C4532X7R1H685K TDK
C2 30 pF Chip Capacitor ATC100B300JT500XT ATC
C3, C13, C14 1000 pF Chip Capacitors ATC100B102JT50XT ATC
C4, C5, C6 1 F, 100 V Chip Capacitors GRM31CR72A105KA01L Murata
C7, C8, C9, C10, 3900 pF Chip Capacitors ATC700B392JT50X ATC
C11, C12
C15 4.7 F, 100 V Chip Capacitor GRM55ER72A475KA01B Murata
C16, C17 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
C18 220 F, 100 V Electrolytic Capacitor MCGPR100V227M16X26--RH Multicomp
J1 Jumper with Copper Tape
L1 82 nH Inductor 1812SMS--82NJ CoilCraft
L2 8 Turn, #14 AWG ID=0.250 Inductor, Hand Wound Copper Wire Freescale
L3, L4 8 nH Inductors A03TKLC CoilCraft
R1 15 , 1/4 W Chip Resistor CRCW120615R0FKEA Vishay
T1 Balun Transformer TUI--LF--9 Comm Concepts
Coax1, Coax2 25 , Semi Rigid RF Cable, 3 mm Line, 16 cm Length UT--141C--25 Micro--Coax
Coax3 25 , Semi Rigid RF Cable, 3 mm Line, 15 cm Length UT--141C--25 Micro--Coax
PCB 0.030, r = 2.55 GX0300--55--22 Arlon

MMRF1016HR5
RF Device Data
10 Freescale Semiconductor, Inc.
 TYPICAL CHARACTERISTICS — 88--108 MHz

30 85
VDD = 50 Vdc, IDQ = 150 mA 108 MHz
29 80
28 75
98 MHz

D DRAIN EFFICIENCY (%)

108 MHz

Gps, POWER GAIN (dB)

27 70
88 MHz
26 Gps 65
98 MHz
25 60
88 MHz
24 55
23 50
D
22 45
21 40
20 35
100 200 300 400 500 600 700 800
Pout, OUTPUT POWER (WATTS)
Figure 22. Broadband CW Power Gain and Drain
Efficiency versus Output Power — 88--108 MHz

27 82
VDD = 50 Vdc, IDQ = 150 mA
26.5 81
Pout = 600 W, CW
26 80

D, DRAIN EFFICIENCY (%)

25.5 Gps 79
Gps, POWER GAIN (dB)

25 78
24.5 77
24 76
23.5 75
D
23 74
22.5 73
22 72
86 90 94 98 102 106 110
f, FREQUENCY (MHz)
Figure 23. CW Power Gain and Drain Efficiency
versus Frequency — 88--108 MHz

MMRF1016HR5
RF Device Data
Freescale Semiconductor, Inc. 11
 f = 88 MHz

f = 108 MHz

Zsource

Zo = 25 

Zload
f = 108 MHz
f = 88 MHz

VDD = 50 Vdc, IDQ = 150 mA, Pout = 600 W Avg.

f Zsource Zload
MHz  
88 3.20 + j14.50 10.35 + j2.80
98 4.20 + j15.00 9.50 + j3.00
108 4.00 + j15.00 8.90 + j3.50
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.

Zload = Test circuit impedance as measured from

drain to drain, balanced configuration.

Input Device Output

Matching + Under -- Matching
Network Test Network

-- +
Z Z
source load

Figure 24. Series Equivalent Source and Load Impedance — 88--108 MHz

MMRF1016HR5
RF Device Data
12 Freescale Semiconductor, Inc.
 C11 C9
-- --
C20 C22
B1 C7
C5
L3
C18

COAX1 L1 COAX3

C14
C1 C3* C13 C15

CUT OUT AREA

C2 C4* C16
C24* C17

COAX2 L2 COAX4

C19
L4

C6
B2 C10

C8 -- C21
-- C23

C12
*Mounted on side

Figure 25. MMRF1016HR6 Test Circuit Component Layout — 352.2 MHz

Table 7. MMRF1016HR6 Test Circuit Component Designations and Values — 352.2 MHz
Part Description Part Number Manufacturer
B1, B2 47 , 100 MHz Short Ferrite Beads 2743019447 Fair--Rite
C1, C2 100 pF Chip Capacitors ATC100B101JT500XT ATC
C3*, C24* 22 pF Chip Capacitors ATC100B221JT300XT ATC
C4* 20 pF Chip Capacitor ATC100B200JT500XT ATC
C5, C6 2.2 F Chip Capacitors C1825C225J5RAC--TU Kemet
C7, C8 220 nF Chip Capacitors C1812C224K5RAC--TU Kemet
C9, C10 0.1 F Chip Capacitors CDR33BX104AKWS AVX
C11, C12 47 F, 50 V Electrolytic Capacitors 476KXM050M Illinois Cap
C13 39 pF, 500 V Chip Capacitor MCM01--009DD390J--F CDE
C14, C15, C16, 240 pF Chip Capacitors ATC100B241JT200XT ATC
C17
C18, C19 2.2 F Chip Capacitors G2225X7R225KT3AB ATC
C20, C21, C22, 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
C23
Coax1, 2, 3, 4 25 , Semi Rigid Coax, 2.2 Shield Length UT141--25 Precision Tube Company
L1, L2 2.5 nH, 1 Turn Inductors A01TKLC Coilcraft
L3, L4 10 Turn, #16 AWG ID=0.160 Inductors, Hand Wound Copper Wire Freescale
*Mounted on side

MMRF1016HR5
RF Device Data
Freescale Semiconductor, Inc. 13
 TYPICAL CHARACTERISTICS — 352.2 MHz

23 80
Gps
22 VDD = 50 Vdc 70
IDQ = 150 mA

D, DRAIN EFFICIENCY (%)

21 f = 352.2 MHz 60

Gps, POWER GAIN (dB)

20 50
D
19 40

18 30

17 20

16 10

15 0
10 100 1000
Pout, OUTPUT POWER (WATTS) CW
Figure 26. CW Power Gain and Drain Efficiency
versus Output Power

MMRF1016HR5
RF Device Data
14 Freescale Semiconductor, Inc.
 Zo = 10 

f = 352.2 MHz
Zsource

f = 352.2 MHz

Zload

VDD = 50 Vdc, IDQ = 150 mA, Pout = 600 W CW

f Zsource Zload
MHz  
352.2 1.10 + j3.80 2.26 + j3.57
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.

Zload = Test circuit impedance as measured from

drain to drain, balanced configuration.

Input Device Output

Matching + Under -- Matching
Network Test Network

-- +
Z Z
source load

Figure 27. Series Equivalent Source and Load Impedance — 352.2 MHz

MMRF1016HR5
RF Device Data
Freescale Semiconductor, Inc. 15
 PACKAGE DIMENSIONS

MMRF1016HR5
RF Device Data
16 Freescale Semiconductor, Inc.
 MMRF1016HR5
RF Device Data
Freescale Semiconductor, Inc. 17
 PRODUCT DOCUMENTATION AND SOFTWARE

Refer to the following resources to aid your design process.

Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator

For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 July 2014  Initial Release of Data Sheet

MMRF1016HR5
RF Device Data
18 Freescale Semiconductor, Inc.
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Document DataMMRF1016H
Number:
Rev. 0, 7/2014Semiconductor,
Freescale Inc. 19