Freescale Semiconductor Document Number: AFT18S230S

Technical Data Rev. 2, 3/2013

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET
This 50 watt RF power LDMOS transistor is designed for cellular base station
AFT18S230SR3
applications covering the frequency range of 1805 to 1880 MHz.
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQ = 1800 mA, Pout = 50 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
1805--1880 MHz, 50 W AVG., 28 V
Gps D Output PAR ACPR IRL
Frequency (dB) (%) (dB) (dBc) (dB)

1805 MHz 18.9 32.0 7.2 --35.0 --19

1840 MHz 19.1 32.0 7.1 --35.0 --18
1880 MHz 19.0 32.0 6.8 --34.0 --11

Features
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
NI--780S--6
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel.
For R5 Tape and Reel option, see p. 12.
N.C. 1 6 VBW

RFin/VGS 2 5 RFout/VDS

N.C. 3 4 VBW
(Top View)

Figure 1. Pin Connections

Freescale Semiconductor, Inc., 2012--2013. All rights reserved. AFT18S230SR3

RF Device Data
Freescale Semiconductor, Inc. 1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature Range TC --40 to +150 C
Operating Junction Temperature Range (1,2) TJ --40 to +225 C
CW Operation @ TC = 25C when DC current is fed through drain lead, pin 5 CW 253 W
Derate above 25C 1.7 W/C
CW Operation @ TC = 25C when DC current is fed through pin 4 and pin 6 CW 83 W
Derate above 25C 0.41 W/C

Table 2. Thermal Characteristics

Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case RJC C/W
Case Temperature 80C, 50 W CW, 28 Vdc, IDQ = 1800 mA, 1840 MHz 0.41
Case Temperature 92C, 160 W CW(4), 28 Vdc, IDQ = 1800 mA, 1840 MHz 0.31

Table 3. ESD Protection Characteristics

Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV

Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current IDSS 10 Adc
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current IDSS 1 Adc
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate--Source Leakage Current IGSS 1 Adc
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage VGS(th) 1.5 2.0 2.5 Vdc
(VDS = 10 Vdc, ID = 291 Adc)
Gate Quiescent Voltage VGS(Q) 2.3 2.8 3.3 Vdc
(VDD = 28 Vdc, ID = 1800 mAdc, Measured in Functional Test)
Drain--Source On--Voltage VDS(on) 0.1 0.24 0.3 Vdc
(VGS = 10 Vdc, ID = 2.9 Adc)
Functional Tests (5) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1800 mA, Pout = 50 W Avg., f = 1880 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain Gps 18.0 19.0 21.0 dB
Drain Efficiency D 30.5 32.0 %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.4 6.8 dB
Adjacent Channel Power Ratio ACPR --34.0 --32.0 dBc
Input Return Loss IRL --11 --7 dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
5. Part internally matched both on input and output.
(continued)
AFT18S230SR3
RF Device Data
2 Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit

Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1800 mA, f = 1840 MHz
VSWR 10:1 at 32 Vdc, 257 W CW(1) Output Power No Device Degradation
(3 dB Input Overdrive from 230 W CW Rated Power)

Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1800 mA, 1805--1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB 207 W
AM/PM 7.6
(Maximum value measured at the P3dB compression point across
the 1805--1880 MHz bandwidth)
VBW Resonance Point VBWres 90 MHz
(IMD Third Order Intermodulation Inflection Point)

Gain Flatness in 75 MHz Bandwidth @ Pout = 50 W Avg. GF 0.35 dB

Gain Variation over Temperature G 0.01 dB/C
(--30C to +85C)

Output Power Variation over Temperature P1dB 0.37 dB/C

(--30C to +85C) (1)

1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

AFT18S230SR3
RF Device Data
Freescale Semiconductor, Inc. 3
 C15
C19
C5
C11
C21 C13
C16

C6
R1

C1 C3
C9

CUT OUT AREA

C24
C2 C4 C10
C23

R2 C8

C18
C22 C14
C7
C20
C12 C17

AFT18S230S
Rev. 0

Figure 2. AFT18S230SR3 Test Circuit Component Layout

Table 5. AFT18S230SR3 Test Circuit Component Designations and Values

Part Description Part Number Manufacturer
C1, C21, C22, C23 27 pF Chip Capacitors ATC600F270JT250XT ATC
C2 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC
C3, C4 1.0 pF Chip Capacitors ATC100B1R0BT500XT ATC
C5, C6, C7, C8 27 pF Chip Capacitors ATC100B270JT500XT ATC
C9, C24 39 pF Chip Capacitors ATC600F390JT250XT ATC
C10 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC
C11, C12, C13, C14, C15, 10 F, 100 V Chip Capacitors C5750X7S2A106M TDK
C16, C17, C18

C19, C20 330 F, 63 V Electrolytic Capacitors MCRH63V337M13X21-RH Multicomp

R1, R2 4.75 , 1/4 W Chip Resistors CRCW12064R75FNEA Vishay
PCB 0.020, r = 3.5 RO4350 Rogers

AFT18S230SR3
RF Device Data
4 Freescale Semiconductor, Inc.
 TYPICAL CHARACTERISTICS

20 35

EFFICIENCY (%)
VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1800 mA
19.8 34

D, DRAIN
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
19.6 33
D

Gps, POWER GAIN (dB)

19.4 32
19.2 Input Signal PAR = 9.9 dB @ 0.01% 31
Probability on CCDF Gps

IRL, INPUT RETURN LOSS (dB)

19 --31 --4 --3
18.8 PARC --32 --8 --3.2

ACPR (dBc)

PARC (dB)
18.6 --33 --12 --3.4
18.4 IRL --34 --16 --3.6
18.2 ACPR --35 --20 --3.8
18 --36 --24 --4
1760 1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 50 Watts Avg.

--10
VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1800 mA
IMD, INTERMODULATION DISTORTION (dBc)

Two--Tone Measurements, (f1 + f2)/2 = Center

--20 Frequency of 1840 MHz

IM3--U
--30
IM3--L
IM5--U
--40
IM5--L

--50
IM7--L IM7--U

--60
1 10 100
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing

21 0 40 --20
VDD = 28 Vdc, IDQ = 1800 mA, f = 1840 MHz
D
20.5 --1 35 --25
OUTPUT COMPRESSION AT 0.01%

D DRAIN EFFICIENCY (%)

PARC
PROBABILITY ON CCDF (dB)

--1 dB = 20 W ACPR
Gps, POWER GAIN (dB)

20 --2 --3 dB = 45 W 30 --30

ACPR (dBc)

--2 dB = 35 W
19.5 --3 25 --35

19 --4 20 --40
Gps

18.5 --5 15 --45

Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
18 --6 10 --50
10 25 40 55 70 85
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power

AFT18S230SR3
RF Device Data
Freescale Semiconductor, Inc. 5
 TYPICAL CHARACTERISTICS

21 60 0
D
1880 MHz 1880 MHz
20 1840 MHz 50 --10
Gps 1840 MHz
1805 MHz

D, DRAIN EFFICIENCY (%)

Gps, POWER GAIN (dB)
19 40 --20
1805 MHz
ACPR

ACPR (dBc)
18 VDD = 28 Vdc, IDQ = 1800 mA 30 --30
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth Input Signal
17 PAR = 9.9 dB @ 0.01% 1880 MHz 20 --40
Probability on CCDF
16 1840 MHz 10 --50
1805 MHz
15 0 --60
1 10 100 300
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power

23 30

VDD = 28 Vdc
21 Pin = 0 dBm 20
IDQ = 1800 mA
19 Gain 10
GAIN (dB)

IRL (dB)
17 0

15 --10
IRL

13 --20

11 --30
1500 1600 1700 1800 1900 2000 2100 2200 2300
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response

AFT18S230SR3
RF Device Data
6 Freescale Semiconductor, Inc.
 VDD = 28 Vdc, IDQ = 1800 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB P3dB
Max
f Zsource Zin Zload (1) Linear D AM/PM D AM/PM
(MHz) () () () Gain (dB) (dBm) (W) (%) () (dBm) (W) (%) ()
1805 0.80 - j3.40 1.00 + j3.41 1.09 - j2.10 18.5 54.2 263 57.8 -10 55.1 324 59.9 -16
1840 1.10 - j3.70 1.30 + j3.80 1.20 - j2.30 18.5 54.2 263 57.1 -9 55.2 331 61.1 -16
1880 1.40 - j4.10 1.70 + j4.13 1.11 - j2.30 18.7 54.2 263 57.9 -10 55.0 316 59.5 -16
(1) Load impedance for optimum P1dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.

Input Load Pull Device Output Load Pull

Tuner and Test Under Tuner and Test
Circuit Test Circuit

Zsource Zin Zload

Figure 8. Load Pull Performance Maximum P1dB Tuning

VDD = 28 Vdc, IDQ = 1800 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB P3dB
Max
f Zsource Zin Zload (1) Linear D AM/PM D AM/PM
(MHz) () () () Gain (dB) (dBm) (W) (%) () (dBm) (W) (%) ()
1805 0.80 - j3.40 1.00 + j3.50 1.90 - j0.50 21.7 51.5 141 70.0 -17 53.2 209 71.9 -22
1840 1.10 - j3.70 1.30 + j3.83 1.90 - j0.90 21.4 51.9 155 70.1 -15 52.9 195 72.8 -24
1880 1.40 - j4.10 1.80 + j4.30 1.50 - j1.10 21.3 52.2 166 69.9 -17 52.8 191 71.2 -25
(1) Load impedance for optimum P1dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.

Input Load Pull Device Output Load Pull

Tuner and Test Under Tuner and Test
Circuit Test Circuit

Zsource Zin Zload

Figure 9. Load Pull Performance Maximum Drain Efficiency Tuning

AFT18S230SR3
RF Device Data
Freescale Semiconductor, Inc. 7
 P1dB -- TYPICAL LOAD PULL CONTOURS 1840 MHz

0 0
50
68 62
50.5
--0.5 --0.5
51 66
70
E 51.5 E 64
--1 --1
IMAGINARY ()

IMAGINARY ()
52.5
52
--1.5 --1.5

--2 53.5 53 --2

P P 62
--2.5 --2.5
52.5

54 60
54
56 58
56
--3 --3
0.5 1 1.5 2 2.5 3 0.5 1 1.5 2 2.5 3
REAL () REAL ()
Figure 10. P1dB Load Pull Output Power Contours (dBm) Figure 11. P1dB Load Pull Efficiency Contours (%)

0 0
22.5
22
--26
--0.5 --0.5
--24
--22
E 21.5 --20 E
--1 --1
IMAGINARY ()

IMAGINARY ()

--18
--16
21
--1.5 --1.5 --14
19
18.5 20.5 --12
--2 --2
20 --10
P P
--2.5 --2.5
19.5

--3 --3
0.5 1 1.5 2 2.5 3 0.5 1 1.5 2 2.5 3
REAL () REAL ()
Figure 12. P1dB Load Pull Gain Contours (dB) Figure 13. P1dB Load Pull AM/PM Contours ()

NOTE: P = Maximum Output Power

E = Maximum Drain Efficiency
Power Gain
Drain Efficiency
ACPR
PARC

AFT18S230SR3
RF Device Data
8 Freescale Semiconductor, Inc.
 P3dB -- TYPICAL LOAD PULL CONTOURS 1840 MHz

0 0
51
51.5 70
--0.5 --0.5
52
68
--1 52.5 --1
IMAGINARY ()

IMAGINARY ()
E E 66
53
--1.5 --1.5

53.5
--2 54 --2
54.5
P P 64
--2.5 --2.5
54 56
55 58 62
60
--3 --3
0.5 1 1.5 2 2.5 3 0.5 1 1.5 2 2.5 3
REAL () REAL ()
Figure 14. P3dB Load Pull Output Power Contours (dBm) Figure 15. P3dB Load Pull Efficiency Contours (%)

0 0
20.5
20
--0.5 --0.5
--30
19.5 --28
--1 --1
IMAGINARY ()

E IMAGINARY () --26 E
--24 --20
19 --22
--1.5 --1.5
17 --18
16.5 18.5
--2 --2
18 --16
P P
--2.5 --2.5
17.5

--3 --3 --14

0.5 1 1.5 2 2.5 3 0.5 1 1.5 2 2.5 3
REAL () REAL ()
Figure 16. P3dB Load Pull Gain Contours (dB) Figure 17. P3dB Load Pull AM/PM Contours ()

NOTE: P = Maximum Output Power

E = Maximum Drain Efficiency
Power Gain
Drain Efficiency
ACPR
PARC

AFT18S230SR3
RF Device Data
Freescale Semiconductor, Inc. 9
 PACKAGE DIMENSIONS

AFT18S230SR3
RF Device Data
10 Freescale Semiconductor, Inc.
 AFT18S230SR3
RF Device Data
Freescale Semiconductor, Inc. 11
 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS

Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards

For Software and Tools, do a Part Number search at http://www.freescale.com, and select the Part Number link. Go to the
Software & Tools tab on the parts Product Summary page to download the respective tool.

R5 TAPE AND REEL OPTION

R5 Suffix = 50 Units, 44 mm Tape Width, 13--inch Reel.

The R5 tape and reel option for AFT18S230S part will be available for 2 years after release of AFT18S230S. Freescale
Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the
2 year period customers who have purchased this device in the R5 tape and reel option will be offered AFT18S230S in the R3
tape and reel option.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 Aug. 2012 Initial Release of Data Sheet

1 Nov. 2012 Corrected Tape and Reel tape width from 32 mm to 44 mm, p. 1, 12

2 Mar. 2013 Table 1. Maximum Ratings: added CW Operation rating and derate factor if the part is biased through pin 4
and pin 6, p. 2

AFT18S230SR3
RF Device Data
12 Freescale Semiconductor, Inc.
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AFT18S230SR3
RF Device
Document Data AFT18S230S
Number:
Rev. 2, 3/2013
Freescale Semiconductor, Inc. 13