Freescale Semiconductor Document Number: MRF7S16150H

Technical Data Rev. 1, 12/2008

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3
Designed for WiMAX base station applications with frequencies up to
1700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class MRF7S16150HSR3
AB and Class C amplifier applications.
• Typical WiMAX Performance: VDD = 28 Volts, IDQ = 1500 mA,
Pout = 32 Watts Avg., f = 1600 and 1660 MHz, 802.16d, 64 QAM 3/4,
4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% 1600- 1660 MHz, 32 W AVG., 28 V
Probability on CCDF. WiMAX
Power Gain — 19.7 dB LATERAL N - CHANNEL
Drain Efficiency — 25.4% RF POWER MOSFETs
Device Output Signal PAR — 8.2 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — - 47.5 dBc in 0.5 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1630 MHz, 150 Watts CW
Output Power
• Pout @ 1 dB Compression Point w 150 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use CASE 465 - 06, STYLE 1
NI - 780
• Integrated ESD Protection
MRF7S16150HR3
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465A - 06, STYLE 1

NI - 780S
MRF7S16150HSR3

Table 1. Maximum Ratings

Rating Symbol Value Unit
Drain- Source Voltage VDSS - 0.5, +65 Vdc
Gate- Source Voltage VGS - 6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg - 65 to +150 °C
Case Operating Temperature TC 150 °C
Operating Junction Temperature (1,2) TJ 225 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case RθJC °C/W
Case Temperature 80°C, 149 W CW 0.34
Case Temperature 75°C, 32 W CW 0.37
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.

© Freescale Semiconductor, Inc., 2007 - 2008. All rights reserved. MRF7S16150HR3 MRF7S16150HSR3
RF Device Data
Freescale Semiconductor 1
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22 - A114) IC (Minimum)
Machine Model (per EIA/JESD22 - A115) A (Minimum)
Charge Device Model (per JESD22 - C101) IV (Minimum)

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current IDSS — — 10 μAdc
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current IDSS — — 1 μAdc
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate- Source Leakage Current IGSS — — 1 μAdc
(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics
Gate Threshold Voltage VGS(th) 1.2 2 2.7 Vdc
(VDS = 10 Vdc, ID = 348 μAdc)
Gate Quiescent Voltage VGS(Q) 2 2.7 3.5 Vdc
(VDD = 28 Vdc, ID = 1500 mAdc, Measured in Functional Test)
Drain- Source On - Voltage VDS(on) 0.1 0.2 0.3 Vdc
(VGS = 10 Vdc, ID = 3.48 Adc)

Dynamic Characteristics (1)

Reverse Transfer Capacitance Crss — 1.09 — pF
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance Coss — 585 — pF
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance Ciss — 363 — pF
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 32 W Avg., f = 1600 MHz and f =
1660 MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset.
Power Gain Gps 18.5 19.7 21.5 dB
Drain Efficiency ηD 24 25.4 — %
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF PAR 7.7 8.2 — dB
Adjacent Channel Power Ratio ACPR - 58 - 47.5 - 45 dBc
Input Return Loss IRL — - 12.1 -7 dB
1. Part internally matched both on input and output.
(continued)

MRF7S16150HR3 MRF7S16150HSR3
RF Device Data
2 Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances OFDM Signal (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 32 W Avg.,
f = 1600 MHz and f = 1660 MHz, WiMAX Signal, OFDM Single - Carrier, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @
0.01% Probability on CCDF.
Mask System Type G @ Pout = 32 W Avg. Mask dBc
Point B at 3.5 MHz Offset — - 27 —
Point C at 5 MHz Offset — - 36 —
Point D at 7.4 MHz Offset — - 41 —
Point E at 14 MHz Offset — - 59 —
Point F at 17.5 MHz Offset — - 62 —
Relative Constellation Error @ Pout = 32 W Avg. (1) RCE — - 29.6 — dB
Error Vector Magnitude (1) EVM — 3.3 — % rms
(Typical EVM Performance @ Pout = 32 W Avg. with OFDM 802.16d
Signal Call)

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, 1600 - 1660 MHz Bandwidth
Video Bandwidth @ 180 W PEP Pout where IM3 = - 30 dBc VBW MHz
(Tone Spacing from 100 kHz to VBW) — 20 —
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 60 MHz Bandwidth @ Pout = 32 W Avg. GF — 0.292 — dB
Average Deviation from Linear Phase in 60 MHz Bandwidth Φ — 82.71 — °
@ Pout = 150 W CW
Average Group Delay @ Pout = 150 W CW, f = 1630 MHz Delay — 7.19 — ns
Part - to - Part Insertion Phase Variation @ Pout = 150 W CW, ΔΦ — 22.38 — °
f = 1630 MHz, Six Sigma Window
Gain Variation over Temperature ΔG — 0.01387 — dB/°C
( - 30°C to +85°C)
Output Power Variation over Temperature ΔP1dB — 0.409 — dBm/°C
( - 30°C to +85°C)
1. RCE = 20Log(EVM/100)

MRF7S16150HR3 MRF7S16150HSR3
RF Device Data
Freescale Semiconductor 3
 B1 VSUPPLY
VBIAS + + +
C5 C6 C7 C8 C9
+
R1 C1 C2 C3
R2 Z8
RF
OUTPUT
Z5 Z6 Z7 Z9 Z10 Z11
RF
INPUT C10
Z1 Z2 Z3 Z4

C4
DUT

Z1, Z5, Z11 0.744″ x 0.084″ Microstrip Z7 0.619″ x 1.330″ Microstrip

Z2 0.822″ x 0.084″ Microstrip Z8 0.284″ x 0.190″ Microstrip
Z3 0.252″ x 1.240″ Microstrip Z9 0.220″ x 0.250″ Microstrip
Z4 0.402″ x 1.240″ Microstrip Z10 0.531″ x 0.084″ Microstrip
Z6 0.111″ x 1.330″ Microstrip PCB Arlon CuClad 250GX - 0300- 55- 22, 0.030″, εr = 2.55

Figure 1. MRF7S16150HR3(HSR3) Test Circuit Schematic

Table 5. MRF7S16150HR3(HSR3) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer
B1 Small Ferrite Bead 2743019447 Fair Rite
C1 10 μF, 35 V Electrolytic Capacitor EMVY350ADA100ME55G Nippon Chemi - Con
C2, C8 0.01 μF, 50 V Chip Capacitors C1825C103J5RAC Kemit
C3, C5 10 pF Chip Capacitors ATC100B100BT500XT ATC
C4, C10 47 pF Chip Capacitors ATC100B470BT500XT ATC
C6, C7 22 μF, 35 V Tantalum Capacitors T491X226K035AT Kemet
C9 220 μF, 50 V Electrolytic Capacitor EMVY500ADA221MJ0G Nippon Chemi - Con
R1 1 KΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay
R2 10 Ω, 1/4 W Chip Resistor CRCW120610R1FKEA Vishay

MRF7S16150HR3 MRF7S16150HSR3
RF Device Data
4 Freescale Semiconductor
 B1 R2 C6
R1 C3 C5 C8

C9
C7
C2
C1

C10

CUT OUT AREA

C4

Figure 2. MRF7S16150HR3(HSR3) Test Circuit Component Layout

MRF7S16150HR3 MRF7S16150HSR3
RF Device Data
Freescale Semiconductor 5
 TYPICAL CHARACTERISTICS

EFFICIENCY (%)
24 30

ηD, DRAIN
23 ηD 28
22 26

Gps, POWER GAIN (dB)

21 24
20 Gps 22

IRL, INPUT RETURN LOSS (dB)

19 VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1500 mA, −24 0
18 802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel −30 −4
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%

ACPR (dBc)
17 Probability on CCDF −36 −8
IRL
16 −42 −12
15 ACPR −48 −16
14 −54 −20
1560 1580 1600 1620 1640 1660 1680 1700
f, FREQUENCY (MHz)
Figure 3. WiMAX Broadband Performance
@ Pout = 32 Watts Avg.

EFFICIENCY (%)
24 40
ηD

ηD, DRAIN
23 38
22 36
Gps, POWER GAIN (dB)

21 34
20 Gps 32

IRL, INPUT RETURN LOSS (dB)

19 −20 0
VDD = 28 Vdc, Pout = 64 W (Avg.), IDQ = 1500 mA
18 802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel −25 −4

ACPR (dBc)
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
17 Probability on CCDF −30 −8
IRL
16 −35 −12
15 −40 −16
ACPR
14 −45 −20
1560 1580 1600 1620 1640 1660 1680 1700
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance
@ Pout = 64 Watts Avg.

21 0
IDQ = 2250 mA VDD = 28 Vdc, IDQ = 1500 mA
INTERMODULATION DISTORTION (dBc)

1875 mA −10 f1 = 1625 MHz, f2 = 1635 MHz

20 Two−Tone Measurements, 10 MHz Tone Spacing
Gps, POWER GAIN (dB)

IMD, THIRD ORDER

1500 mA
−20
19
1125 mA −30 IDQ = 375 mA

18
−40
750 mA 937.5 mA
17 VDD = 28 Vdc, IDQ = 1500 mA
−50 562.5 mA
f1 = 1625 MHz, f2 = 1635 MHz
1500 mA 750 mA
Two−Tone Measurements, 10 MHz Tone Spacing
16 −60
1 10 100 400 1 10 100 400
Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus Figure 6. Third Order Intermodulation Distortion
Output Power versus Output Power

MRF7S16150HR3 MRF7S16150HSR3
RF Device Data
6 Freescale Semiconductor
 TYPICAL CHARACTERISTICS

−10 0

IMD, INTERMODULATION DISTORTION (dBc)

IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, IDQ = 1500 mA VDD = 28 Vdc, Pout = 180 W (PEP), IDQ = 1500 mA
−20 f1 = 1625 MHz, f2 = 1635 MHz −10 Two−Tone Measurements
Two−Tone Measurements, 10 MHz Tone Spacing (f1 + f2)/2 = Center Frequency of 1630 MHz
−30 −20

IM3−U
−40 −30
IM3−L
3rd Order
IM5−U
−50 −40
IM5−L
5th Order IM7−U
−60 −50
7th Order IM7−L
−70 −60
1 10 100 400 1 10 100
Pout, OUTPUT POWER (WATTS) PEP TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products Figure 8. Intermodulation Distortion Products
versus Output Power versus Tone Spacing
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)

60 −15
VDD = 28 Vdc, IDQ = 1500 mA −30_C
55 −20
f = 1630 MHz, 802.16d, 64 QAM 3/4 25_C
50 85_C −25
4 Bursts, 7 MHz Channel
45 Bandwidth, Input Signal PAR = 9.5 dB −30
−30_C
40 @ 0.01% Probability on CCDF −35
−40

ACPR (dBc)
35
30 −45
25 Gps TC = −30_C −50
20 −55
15 ACPR 85_C −60
10 25_C −65
5 ηD −70
0 −75
1 10 100 300
Pout, OUTPUT POWER (WATTS) CW
Figure 9. WiMAX, ACPR, Power Gain and Drain
Efficiency versus Output Power

21 70 21
−30_C IDQ = 1500 mA
TC = −30_C
20 f = 1630 MHz
25_C 60 20
25_C
Gps, POWER GAIN (dB)

ηD, DRAIN EFFICIENCY (%)

19
Gps, POWER GAIN (dB)

50
Gps 85_C 19
18 40
85_C 18
17 30
17
16 20
28 V
VDD = 28 Vdc 32 V
15 10 16 VDD = 24 V
ηD IDQ = 1500 mA
f = 1630 MHz
14 0 15
1 10 100 400 0 100 200 300
Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency Figure 11. Power Gain versus Output Power
versus CW Output Power

MRF7S16150HR3 MRF7S16150HSR3
RF Device Data
Freescale Semiconductor 7
 TYPICAL CHARACTERISTICS

108

107

MTTF (HOURS)
106

105
90 110 130 150 170 190 210 230 250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 32 W Avg., and ηD = 25.4%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature

WIMAX TEST SIGNAL

100 −10

−20 10 MHz
10 Channel BW
Input Signal −30
1
PROBABILITY (%)

−40
0.1
(dB)

−50
0.01
802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz −60
0.001 Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability −70
on CCDF
0.0001
−80
0 2 4 6 8 10 ACPR in 1 MHz ACPR in 1 MHz
PEAK−TO−AVERAGE (dB) Integrated BW Integrated BW
−90
Figure 13. OFDM 802.16d Test Signal −20 −15 −10 −5 0 5 10 15 20
f, FREQUENCY (MHz)
Figure 14. WiMAX Spectrum Mask Specifications

MRF7S16150HR3 MRF7S16150HSR3
RF Device Data
8 Freescale Semiconductor
 Zo = 5 Ω

f = 1700 MHz

Zload
f = 1500 MHz

f = 1700 MHz

Zsource
f = 1500 MHz

VDD = 28 Vdc, IDQ = 1500 mA, Pout = 32 W Avg.

f Zsource Zload
MHz W W
1500 1.09 - j3.76 1.00 - j2.35
1520 1.06 - j3.62 0.96 - j2.19
1540 1.04 - j3.48 0.93 - j2.03
1560 1.01 - j3.34 0.91 - j1.88
1580 0.99 - j3.21 0.88 - j1.74
1600 0.96 - j3.07 0.86 - j1.60
1620 0.94 - j2.94 0.83 - j1.46
1640 0.92 - j2.81 0.81 - j1.33
1660 0.90 - j2.69 0.79 - j1.20
1680 0.88 - j2.56 0.77 - j1.07
1700 0.86 - j2.44 0.76 - j0.95
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.

Input Device Output

Matching Under Matching
Network Test Network

Z Z
source load

Figure 15. Series Equivalent Source and Load Impedance

MRF7S16150HR3 MRF7S16150HSR3
RF Device Data
Freescale Semiconductor 9
 PACKAGE DIMENSIONS

B G
2X Q
1
bbb M T A M B M

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
3 Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
B 2 K 3. DELETED
(FLANGE) 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
INCHES MILLIMETERS
bbb M T A M B M DIM MIN MAX MIN MAX
A 1.335 1.345 33.91 34.16
B 0.380 0.390 9.65 9.91
M (INSULATOR) R (LID) C 0.125 0.170 3.18 4.32
D 0.495 0.505 12.57 12.83
bbb M T A M B M ccc M T A M B M E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
S (INSULATOR) G 1.100 BSC 27.94 BSC
N (LID) H 0.057 0.067 1.45 1.70
ccc M T A M B M aaa M T A M B M K 0.170 0.210 4.32 5.33
M 0.774 0.786 19.66 19.96
H N 0.772 0.788 19.60 20.00
Q .118 .138 3.00 3.51
C R 0.365 0.375 9.27 9.53
S 0.365 0.375 9.27 9.52
F aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
E T SEATING ccc 0.015 REF 0.381 REF
PLANE
A A STYLE 1:
(FLANGE) PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465 - 06
ISSUE G
NI - 780
MRF7S16150HR3

4X U
(FLANGE)

B 4X Z
(LID)
1

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
2 2X K 3. DELETED
B 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
(FLANGE)
FROM PACKAGE BODY.
D
INCHES MILLIMETERS
bbb M T A M B M
DIM MIN MAX MIN MAX
A 0.805 0.815 20.45 20.70
B 0.380 0.390 9.65 9.91
C 0.125 0.170 3.18 4.32
D 0.495 0.505 12.57 12.83
N (LID) R (LID) E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
ccc M T A M B M
ccc M T A M B M H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
M (INSULATOR) S (INSULATOR) M 0.774 0.786 19.61 20.02
N 0.772 0.788 19.61 20.02
bbb M T A M B M aaa M T A M B M R 0.365 0.375 9.27 9.53
S 0.365 0.375 9.27 9.52
H U −−− 0.040 −−− 1.02
Z −−− 0.030 −−− 0.76
3
C aaa 0.005 REF 0.127 REF
F bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
E T SEATING
STYLE 1:
PLANE
A A PIN 1. DRAIN
2. GATE
(FLANGE)
CASE 465A - 06 5. SOURCE

ISSUE H
NI - 780S
MRF7S16150HSR3

MRF7S16150HR3 MRF7S16150HSR3
RF Device Data
10 Freescale Semiconductor
 PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 June 2007 • Initial Release of Data Sheet

1 Dec. 2008 • Table 4, On Characteristics, tightened VGS(Q) max value from 3.8 to 3.5 to match production test value, p. 2
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 4
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
• Updated Fig. 13, OFDM 802.16d Test Signal, to show input signal only, p. 8
• Updated Fig. 14, WiMAX Spectrum Mask Specifications, to more accurately represent the WiMAX
spectrum, p. 8

MRF7S16150HR3 MRF7S16150HSR3
RF Device Data
Freescale Semiconductor 11
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MRF7S16150HR3 MRF7S16150HSR3
Document Number: MRF7S16150H RF Device Data
Rev. 1, 12/2008
12 Freescale Semiconductor