Dual Operational Amplifier: Semiconductor Technical Data
Dual Operational Amplifier: Semiconductor Technical Data
Dual Operational Amplifier: Semiconductor Technical Data
The LM833 is a standard low–cost monolithic dual general–purpose DUAL OPERATIONAL
operational amplifier employing Bipolar technology with innovative
high–performance concepts for audio systems applications. With high AMPLIFIER
frequency PNP transistors, the LM833 offers low voltage noise
(4.5 nV/ Hz ), 15 MHz gain bandwidth product, 7.0 V/µs slew rate, 0.3 mV SEMICONDUCTOR
input offset voltage with 2.0 µV/°C temperature coefficient of input offset TECHNICAL DATA
voltage. The LM833 output stage exhibits no deadband crossover distortion,
large output voltage swing, excellent phase and gain margins, low open loop
high frequency output impedance and symmetrical source/sink AC
frequency response.
The LM833 is specified over the automotive temperature range and is
available in the plastic DIP and SO–8 packages (P and D suffixes). For an
improved performance dual/quad version, see the MC33079 family.
• Low Voltage Noise: 4.5 nV/ ǸHz 8
1
• High Gain Bandwidth Product: 15 MHz
• High Slew Rate: 7.0 V/µs N SUFFIX
•
PLASTIC PACKAGE
Low Input Offset Voltage: 0.3 mV CASE 626
• Low T.C. of Input Offset Voltage: 2.0 µV/°C
• Low Distortion: 0.002%
• Excellent Frequency Stability
8
• Dual Supply Operation 1
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
PIN CONNECTIONS
Output 1 1 8 VCC
MAXIMUM RATINGS
Rating Symbol Value Unit 2 1 7 Output 2
Supply Voltage (VCC to VEE) VS +36 V Inputs 1
3 6
Input Differential Voltage Range (Note 1) VIDR 30 V
2 Inputs 2
Input Voltage Range (Note 1) VIR ±15 V
VEE 4 5
Output Short Circuit Duration (Note 2) tSC Indefinite
Operating Ambient Temperature Range TA –40 to +85 °C (Top View)
Operating Junction Temperature TJ +150 °C
Storage Temperature Tstg –60 to +150 °C ORDERING INFORMATION
Maximum Power Dissipation (Notes 2 and 3) PD 500 mW Operating
Device Temperature Range Package
NOTES: 1. Either or both input voltages must not exceed the magnitude of VCC or VEE.
2. Power dissipation must be considered to ensure maximum junction temperature
LM833N Plastic DIP
(TJ) is not exceeded (see power dissipation performance characteristic). TA = – 40° to +85°C
3. Maximum value at TA ≤ 85°C. LM833D SO–8
Large Signal Voltage Gain (RL = 2.0 kΩ, VO = ±10 V AVOL 90 110 – dB
Output Voltage Swing: V
RL = 2.0 kΩ, VID = 1.0 V VO+ 10 13.7 –
RL = 2.0 kΩ, VID = 1.0 V VO– – –14.1 –10
RL = 10 kΩ, VID = 1.0 V VO+ 12 13.9 –
RL = 10 kΩ, VID = 1.0 V VO– – –14.7 –12
Common Mode Rejection (Vin = ±12 V) CMR 80 100 – dB
Power Supply Rejection (VS = 15 V to 5.0 V, –15 V to –5.0 V) PSR 80 115 – dB
Power Supply Current (VO = 0 V, Both Amplifiers) ID – 4.0 8.0 mA
AC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = –15 V, TA = 25°C, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Slew Rate (Vin = –10 V to +10 V, RL = 2.0 kΩ, AV = +1.0) SR 5.0 7.0 – V/µs
Gain Bandwidth Product (f = 100 kHz) GBW 10 15 – MHz
Unity Gain Frequency (Open Loop) fU – 9.0 – MHz
Unity Gain Phase Margin (Open Loop) θm – 60 – Deg
Equivalent Input Noise Voltage (RS = 100 Ω, f = 1.0 kHz) en – 4.5 – nVń ǸHz
Equivalent Input Noise Current (f = 1.0 kHz) in – 0.5 – pAń ǸHz
Power Bandwidth (VO = 27 Vpp, RL = 2.0 kΩ, THD ≤ 1.0%) BWP – 120 – kHz
Distortion (RL = 2.0 kΩ, f = 20 Hz to 20 kHz, VO = 3.0 Vrms, AV = +1.0) THD – 0.002 – %
Channel Separation (f = 20 Hz to 20 kHz) CS – –120 – dB
800 1000
IIB , INPUT BIAS CURRENT (nA)
VCC = +15 V
800 VEE = –15 V
600 VCM = 0 V
600
400
400
200
200
0 0
–50 0 50 100 150 –55 –25 0 25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)
IS
TA = 25°C 8.0
6.0 VO
+
400 VEE
4.0
200
2.0
0 0
5.0 10 15 20 0 5.0 10 15 20
VCC, |VEE|, SUPPLY VOLTAGE (V) VCC, |VEE|, SUPPLY VOLTAGE (V)
100
90
95
90 80
–55 –25 0 25 50 75 100 125 5.0 10 15 20
TA, AMBIENT TEMPERATURE (°C) VCC, |VEE|, SUPPLY VOLTAGE (V)
Figure 7. Open Loop Voltage Gain and Figure 8. Gain Bandwidth Product
Phase versus Frequency versus Temperature
120 0 20
AVOL, OPEN LOOP VOLTAGE GAIN (dB)
100
45 15
80
Phase 10
60 90
0 180 0
1.0 10 100 1.0 k 10 k 100 k 1.0 M 10 M –55 –25 0 25 50 75 100 125
f, FREQUENCY (Hz) TA, AMBIENT TEMPERATURE (°C)
f = 100 kHz
TA = 25°C
10 VCC = +15 V
VEE = –15 V –
Vin + VO
4.0 RL = 2.0 kΩ RL
AV = +1.0
0 2.0
5.0 10 15 20 –55 –25 0 25 50 75 100 125
VCC, |VEE|, SUPPLY VOLTAGE (V) TA, AMBIENT TEMPERATURE (°C)
Figure 11. Slew Rate versus Supply Voltage Figure 12. Output Voltage versus Frequency
10 35
RL = 2.0k Ω
AV = +1.0
30
VO, OUTPUT VOLTAGE (Vpp )
8.0 TA = 25°C Falling
SR, SLEW RATE (V/ µ s)
25
6.0 Rising
20
VCC = +15 V
4.0 15 VEE = –15 V
+ VO
v
– RL = 2.0 kΩ
Vin RL 10 THD 1.0%
2.0 TA = 25°C
5.0
0 0
5.0 10 15 20 10 100 1.0 k 10 k 1.0 M 10 M 100 k
VCC, |VEE|, SUPPLY VOLTAGE (V) f, FREQUENCY (Hz)
Figure 13. Maximum Output Voltage Figure 14. Output Saturation Voltage
versus Supply Voltage versus Temperature
20 15
V sat , OUTPUT SATURATION VOLTAGE |V|
RL = 10 kΩ VO +
15 TA = 25°C +Vsat
VO, OUTPUT VOLTAGE (Vpp )
10
5.0
–Vsat
14
0
–5.0
Figure 15. Power Supply Rejection Figure 16. Common Mode Rejection
versus Frequency versus Frequency
140 160
PSR, POWER SUPPLY REJECTION (dB)
0 20
100 1.0 k 10 k 100 k 1.0 M 10 M 100 1.0 k 10 k 100 k 1.0 M 10 M
f, FREQUENCY (Hz) f, FREQUENCY (Hz)
Figure 17. Total Harmonic Distortion Figure 18. Input Referred Noise Voltage
versus Frequency versus Frequency
THD, TOTAL HARMONIC DISTORTION (%)
1.0 10
–
VCC = +15 V e n, INPUT NOISE VOLTAGE (nV/√ Hz )
VO VEE = –15 V
+
RL RL = 2.0 kΩ
0.1 TA = 25°C 5.0
VCC = +15 V
VEE = –15 V
0.01 VO = 1.0 Vrms RS = 100 Ω
2.0 TA = 25°C
VO = 3.0 Vrms
0.001 1.0
10 100 1.0 k 10 k 100 k 10 100 1.0 k 10 k 100 k
f, FREQUENCY (Hz) f, FREQUENCY (Hz)
Figure 19. Input Referred Noise Current Figure 20. Input Referred Noise Voltage
versus Frequency versus Source Resistance
2.0 100
VCC = +15 V
i n , INPUT NOISE CURRENT (pA/√ Hz )
VCC = +15 V
e n, INPUT NOISE VOLTAGE (nV/√ Hz )
0.7
10
0.5
0.4
0.3
0.2 1.0
10 100 1.0 k 10 k 100 k 1.0 10 100 1.0 k 10 k 100 k 1.0 M
f, FREQUENCY (Hz) RS, SOURCE RESISTANCE (Ω)
Figure 21. Inverting Amplifier Figure 22. Noninverting Amplifier Slew Rate
VCC = +15 V
VO , OUTPUT VOLTAGE (10 mV/DIV)
VEE = –15 V
RL = 2.0 kΩ
CL = 0 pF
AV = +1.0
TA = 25°C
OUTLINE DIMENSIONS
N SUFFIX
PLASTIC PACKAGE
CASE 626–05
ISSUE K
8 5 NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
–B– 2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).
1 4 3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
MILLIMETERS INCHES
F DIM MIN MAX MIN MAX
A 9.40 10.16 0.370 0.400
NOTE 2 –A– B 6.10 6.60 0.240 0.260
L C 3.94 4.45 0.155 0.175
D 0.38 0.51 0.015 0.020
F 1.02 1.78 0.040 0.070
G 2.54 BSC 0.100 BSC
C H 0.76 1.27 0.030 0.050
J 0.20 0.30 0.008 0.012
K 2.92 3.43 0.115 0.135
–T– J L 7.62 BSC 0.300 BSC
SEATING N M ––– 10_ ––– 10_
PLANE N 0.76 1.01 0.030 0.040
M
D K
H G
0.13 (0.005) M T A M B M
D SUFFIX
PLASTIC PACKAGE
CASE 751–05
(SO–8)
ISSUE R
NOTES:
A D 1. DIMENSIONING AND TOLERANCING PER ASME
C
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETERS.
8 5 3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
E H 0.25 M B M
5. DIMENSION B DOES NOT INCLUDE MOLD
1 PROTRUSION. ALLOWABLE DAMBAR
4 PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
h X 45 _
B q MILLIMETERS
e DIM MIN MAX
A 1.35 1.75
A A1 0.10 0.25
C B 0.35 0.49
SEATING C 0.18 0.25
PLANE D 4.80 5.00
L E 3.80 4.00
0.10 e 1.27 BSC
H 5.80 6.20
A1 B h 0.25 0.50
L 0.40 1.25
0.25 M C B S A S
q 0_ 7_
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*LM833/D*
8 ◊ MOTOROLA ANALOG IC DEVICE DATA
LM833/D
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