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    Chapter 5

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    Mei Qii
    This document summarizes Chapter 5 from the textbook Microelectronics by Neamen, which discusses the bipolar junction transistor. The chapter will cover the physical structure and operation of the BJT, DC analysis techniques for BJT circuits, basic BJT circuit applications like inverters and amplifiers, and BJT biasing schemes including single resistor, voltage divider, and integrated circuit biasing. It will also discuss multistage transistor circuits like cascode configurations.

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    Chapter 5

    Uploaded by

    Mei Qii
    197 views16 pages
    This document summarizes Chapter 5 from the textbook Microelectronics by Neamen, which discusses the bipolar junction transistor. The chapter will cover the physical structure and operation of the BJT, DC analysis techniques for BJT circuits, basic BJT circuit applications like inverters and amplifiers, and BJT biasing schemes including single resistor, voltage divider, and integrated circuit biasing. It will also discuss multistage transistor circuits like cascode configurations.

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    This document summarizes Chapter 5 from the textbook Microelectronics by Neamen, which discusses the bipolar junction transistor. The chapter will cover the physical structure and operation of the BJT, DC analysis techniques for BJT circuits, basic BJT circuit applications like inverters and amplifiers, and BJT biasing schemes including single resistor, voltage divider, and integrated circuit biasing. It will also discuss multistage transistor circuits like cascode configurations.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    197 views16 pages

    Chapter 5

    Uploaded by

    Mei Qii
    This document summarizes Chapter 5 from the textbook Microelectronics by Neamen, which discusses the bipolar junction transistor. The chapter will cover the physical structure and operation of the BJT, DC analysis techniques for BJT circuits, basic BJT circuit applications like inverters and amplifiers, and BJT biasing schemes including single resistor, voltage divider, and integrated circuit biasing. It will also discuss multistage transistor circuits like cascode configurations.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 16

    26/1/2012

    Microelectronics

    Circuit Analysis and Design


    Donald A. Neamen
    Chapter 5
    The Bipolar Junction Transistor

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-1

    In this chapter, we will:


    Discuss the physical structure and operation of
    the bipolar junction transistor.
    Understand the dc analysis and design
    techniques of bipolar transistor circuits.
    Examine three basic applications of bipolar
    transistor circuits.

    Investigate various dc biasing schemes of bipolar


    transistor circuits, including integrated circuit
    biasing.
    Consider the dc biasing of multistage or multitransistor circuits.
    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-2

    26/1/2012

    Cross Section of Integrated Circuit


    npn Transistor

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-3

    Modes of Operation
    Forward-Active
    B-E junction is forward biased
    B-C junction is reverse biased
    Saturation
    B-E and B-C junctions are forward biased
    Cut-Off
    B-E and B-C junctions are reverse biased
    Inverse-Active (or Reverse-Active)
    B-E junction is reverse biased
    B-C junction is forward biased
    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-4

    26/1/2012

    npn BJT in Forward-Active

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-5

    Electrons and Holes in npn BJT

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-6

    26/1/2012

    Electrons and Holes in pnp BJT

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-7

    Circuit Symbols and


    Current Conventions

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-8

    26/1/2012

    Current Relationships

    iE iC iB
    iC iB
    iE (1 iB )
    iC iE

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-9

    Common-Emitter Configurations

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-10

    26/1/2012

    Common-Base Configuration

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-11

    Current-Voltage Characteristics of a
    Common-Base Circuit

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-12

    26/1/2012

    Current-Voltage Characteristics of a
    Common-Emitter Circuit

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-13

    Early Voltage/Finite Output


    Resistance

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-14

    26/1/2012

    Effects of Leakage Currents


    on I-V Characteristics

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-15

    Effect of Collector-Base Breakdown


    on Common Base I-V Characteristics

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-16

    26/1/2012

    Effect of Collector-Base Breakdown on


    Common Emitter I-V Characteristics

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-17

    DC Equivalent Circuit for


    npn Common Emitter

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-18

    26/1/2012

    DC Equivalent Circuit for


    pnp Common Emitter

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-19

    Load Line

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-20

    10

    26/1/2012

    Problem-Solving Technique:
    Bipolar DC Analysis
    1. Assume that the transistor is biased in
    forward active mode
    a. VBE = VBE(on), IB > 0, & IC = IB
    2. Analyze linear circuit.
    3. Evaluate the resulting state of transistor.
    a. If VCE > VCE(sat), assumption is correct
    b. If IB < 0, transistor likely in cutoff
    c. If VCE < 0, transistor likely in saturation
    4. If initial assumption is incorrect, make new
    assumption and return to Step 2.
    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-21

    Voltage Transfer Characteristic for


    npn Circuit

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-22

    11

    26/1/2012

    Voltage Transfer Characteristic for


    pnp Circuit

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-23

    Digital Logic

    Inverter

    Neamen

    NOR gate

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-24

    12

    26/1/2012

    Bipolar Inverter as Amplifier

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-25

    Effect of Improper Biasing on


    Amplified Signal Waveform

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-26

    13

    26/1/2012

    Single Base Resistor Biasing

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-27

    Common Emitter with Voltage


    Divider Biasing and Emitter Resistor

    VTH [ R2 /( R1 R2 )VCC
    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-28

    14

    26/1/2012

    Integrated
    Circuit
    Biasing

    IC IQ

    Neamen

    I1
    1

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-29

    Multistage Cascade Transistor Circuit

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-30

    15

    26/1/2012

    Multistage Cascode
    Transistor Circuit

    Neamen

    Microelectronics, 4e
    McGraw-Hill

    Chapter 5-31

    16

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