SVS5N70D/MJ/MN/F/MU_Datasheet

5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION
SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high
voltage power MOSFETs produced using Silan’s DP MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.

FEATURES

 5A,700V, RDS(on)(typ.)=0.8@VGS=10V
 New revolutionary high voltage technology
 Ultra low gate charge
 Periodic avalanche rated
 Extreme dv/dt rated
 High peak current capability

ORDERING INFORMATION

Hazardous
Part No. Package Marking Packing
Substance Control
SVS5N70D TO-252-2L SVS5N70D Halogen free Tube
SVS5N70DTR TO-252-2L SVS5N70D Halogen free Tape&reel
SVS5N70MJ TO-251J-3L SVS5N70 Halogen free Tube
SVS5N70MN TO-251N-3L 5N70MN Halogen free Tube
SVS5N70F TO-220F-3L SVS5N70F Halogen free Tube
SVS5N70MU TO-251U-3L SVS5N70MU Halogen free Tube

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C)

Ratings
Characteristics Symbol SVS5N70 SVS5N70 SVS5N70 SVS5N70 Unit
D MJ/MU MN F

Drain-Source Voltage VDS 700 V

Gate-Source Voltage VGS ±30 V
TC=25°C 5.0
Drain Current ID A
TC=100°C 3.2

Drain Current Pulsed IDM 18 A

Power Dissipation(TC=25C) 58 60 60 24 W
PD
-Derate above 25C 0.46 0.48 0.48 0.19 W/C

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.8

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 SVS5N70D/MJ/MN/F/MU_Datasheet
Ratings
Characteristics Symbol SVS5N70 SVS5N70 SVS5N70 SVS5N70 Unit
D MJ/MU MN F

Single Pulsed Avalanche Energy (Note 1) EAS 180 mJ

Operation Junction Temperature Range TJ -55～+150 C
Storage Temperature Range Tstg -55～+150 C

THERMAL CHARACTERISTICS

Ratings
Characteristics Symbol SVS5N70 SVS5N70 SVS5N70 SVS5N70 Unit
D MJ/MU MN F

Thermal Resistance, Junction-to-Case RθJC 2.16 2.08 2.08 5.21 C/W

Thermal Resistance, Junction-to-Ambient RθJA 62.00 62.00 62.00 62.50 C/W

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25C)

Characteristics Symbol Test conditions Min. Typ. Max. Unit

Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 700 -- -- V
Drain-Source Leakage Current IDSS VDS=700V, VGS=0V -- -- 1.0 µA

Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ±100 nA

Gate Threshold Voltage VGS(th) VGS=VDS, ID=250µA 2.0 -- 4.0 V
Static Drain- Source On State
RDS(on) VGS=10V, ID=2.5A -- 0.8 0.9 
Resistance
Input Capacitance Ciss -- 360 --
VDS=100V, VGS=0V,
Output Capacitance Coss -- 21 -- pF
f=1.0MHZ
Reverse Transfer Capacitance Crss -- 1.9 --
Turn-on Delay Time td(on) -- 9.47 --
VDD=350V, ID=5.0A,
Turn-on Rise Time tr -- 26.3 --
VGS=10V, RG=24 ns
Turn-off Delay Time td(off) -- 57.9 --
(Note 2,3)
Turn-off Fall Time tf -- 25.7 --
Total Gate Charge Qg VDS=560V, ID=5.0A, -- 19.2 --
Gate-Source Charge Qgs VGS=10V -- 2.45 -- nC
Gate-Drain Charge Qgd (Note 2,3) -- 11.7 --

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 SVS5N70D/MJ/MN/F/MU_Datasheet

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristics Symbol Test conditions Min. Typ. Max. Unit

Continuous Source Current IS Integral Reverse P-N Junction -- -- 5.0
A
Pulsed Source Current ISM Diode in the MOSFET -- -- 18.0
Diode Forward Voltage VSD IS=5.0A,VGS=0V -- -- 1.4 V
Reverse Recovery Time Trr IS=5.0A,VGS=0V, -- 305 -- ns
Reverse Recovery Charge Qrr dIF/dt=100A/µs -- 2.3 -- µC
Notes:
1. L=79mH,IAS=2.0A,VDD=100V, RG=25, starting TJ=25C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.

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 SVS5N70D/MJ/MN/F/MU_Datasheet
TYPICAL CHARACTERISTICS

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 SVS5N70D/MJ/MN/F/MU_Datasheet
TYPICAL CHARACTERISTICS(continued)

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 SVS5N70D/MJ/MN/F/MU_Datasheet
TYPICAL TEST CIRCUIT

Gate Charge Test Circuit & Waveform

Same Type VGS

Qg
as DUT 10V
50KΩ
VDS
12V 200nF
300nF

Qgs Qgd

VGS

DUT
3mA
Charge

Resistive Switching Test Circuit & Waveform

RL VDS
VDS
90%
VGS
VDD
RG
DUT
10%
VGS
10V
td(on) tr
ton td(off) tf
toff

Unclamped Inductive Switching Test Circuit & Waveform

1 2 BVDSS
EAS =
L 2 LIAS BVDSS - VDD
VDS
BVDSS
ID
IAS

RG
DUT VDD ID(t)
10V
VDD VDS(t)
tp
tp Time

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.8

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 SVS5N70D/MJ/MN/F/MU_Datasheet
PACKAGE OUTLINE

TO-252-2L UNIT: mm

L4

TO-251J-3L UNIT: mm

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.8

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 SVS5N70D/MJ/MN/F/MU_Datasheet
PACKAGE OUTLINE(continued)

TO-251N-3L UNIT: mm

TO-220F-3L UNIT: mm

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.8

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 SVS5N70D/MJ/MN/F/MU_Datasheet
PACKAGE OUTLINE(continued)

TO-251U-3L UNIT: mm

9.62±0.3
Φ

6±0.2
1.
30
±0
.1

2.1~2.9

Disclaimer :
 Silan reserves the right to make changes to the information herein for the improvement of the design and performance without
prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such
information is complete and current.
 All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in
system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards
strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause
loss of body injury or damage to property.
 Silan will supply the best possible product for customers!

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.8

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 SVS5N70D/MJ/MN/F/MU_Datasheet
Part No.: SVS5N70D/MJ/MN/F/MU Document Type: Datasheet
Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn

Rev.: 1.8
Revision History:
1. Update the package information of TO-251J-3L
2. Delete the package outline of TO-220F-3L(2)
Rev.: 1.7
Revision History:
1. Add the package information of TO-251U-3L
Rev.: 1.6
Revision History:
1. Delete the package information of TO-251D-3L
Rev.: 1.5
Revision History:
1. Add the package information of TO-251D-3L
Rev.: 1.4
Revision History:
1. Modify the ordering information
2. Modify the package information of TO-252-2L
Rev.: 1.3
Revision History:
1. Modify the package information
Rev.: 1.2
Revision History:
1. Add the information of TO-220F-3L package
Rev.: 1.1
Revision History:
1. Modify the description
Rev.: 1.0
Revision History:
1. First release

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.8

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