Scribd Logo
Upload

Welcome to Scribd!

  • 3 views

    BUH517

    Uploaded by

    wotanel

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    BUH517

    Uploaded by

    wotanel
    3 views4 pages

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    3 views4 pages

    BUH517

    Uploaded by

    wotanel

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors BUH517

    DESCRIPTION
    ·With TO-3PML package
    ·High voltage,high speed
    ·Low collector saturation voltage

    APPLICATIONS
    ·Horizontal deflection stage in standard and high
    reslolution displays for TV’s and monitors.
    ·Switching power supplies for TV’s and monitors.

    PINNING

    PIN DESCRIPTION

    1 Base

    2 Collector
    Fig.1 simplified outline (TO-3PML) and symbol
    3 Emitter

    Absolute maximum ratings(Ta=25 )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 1700 V

    VCEO Collector-emitter voltage Open base 700 V

    VEBO Emitter-base voltage Open collector 10 V

    IC Collector current (DC) 8 A

    ICM Collector current (Pulse) 15 A

    IB Base current (DC) 5 A

    IBM Base current (Pulse) 8 A

    Ptot Total power dissipation TC=25 60 W

    Tj Operating junction temperature 150

    Tstg Storage temperature -65~150

    Downloaded from: http://www.datasheetcatalog.com/


    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors BUH517

    CHARACTERISTICS
    Tj=25 unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V

    V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V

    VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.25A 1.5 V

    VBEsat Base-emitter saturation voltage IC=5A ;IB=1.25A 1.3 V

    VCE=1700V; VBE=0 1.0


    ICES Collector cut-off current mA
    Tj=125 2.0

    IEBO Emitter cut-off current VEB=5V; IC=0 100 µA

    hFE DC current gain IC=5A ; VCE=5V 6

    Switching times

    ts Storage time 2.7 3.9 µs


    IC=5A;IB1=1.25A;IB2=2.5A;
    VCC=400V
    tf Fall time 190 280 ns

    THERMAL CHARACTERISTICS

    SYMBOL PARAMETER MAX UNIT

    Rth j-c Thermal resistance from junction to case 2.08 /W

    Downloaded from: http://www.datasheetcatalog.com/


    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors BUH517

    PACKAGE OUTLINE

    Fig.2 Outline dimensions

    Downloaded from: http://www.datasheetcatalog.com/


    This datasheet has been downloaded from:

    www.DatasheetCatalog.com

    Datasheets for electronic components.

    Downloaded from: http://www.datasheetcatalog.com/

    You might also like