Original Paper

Measurement and Control

1–11
A novel power stability drive system of Ó The Author(s) 2019
Article reuse guidelines:
semiconductor Laser Diode for sagepub.com/journals-permissions
DOI: 10.1177/0020294019840760

high-precision measurement journals.sagepub.com/home/mac

He Huang, Jingxue Ni, Huifeng Wang , Jiajia Zhang,

Rong Gao, Limin Guan and Guiping Wang

Abstract
In view of the strict requirements of the current high-precision measurement system for stable output power of the
semiconductor LD (Laser Diode), a semiconductor LD stable power drive and multi-closed-loop control system are
proposed after analyzing the semiconductor laser’s P–I (Power–Current) characteristics and temperature characteristics.
The system uses a microcontroller as the core control unit and realizes the stable power output control of the semicon-
ductor laser by controlling the current, power and temperature parameters. In this system, first, the control structure
model of the controlled object has been designed. Second, a controllable closed-loop constant current feedback drive
circuit has been designed and a high-precision controllable constant current drive circuit of the semiconductor laser has
been obtained. Furthermore, the control circuit has been designed based on the neural PI (Proportional-Integral) control
model and realizes the short-term stable power output of the semiconductor LD. Finally, a closed-loop temperature
control system is designed to ensure that the operating temperature of the semiconductor laser is relatively stable and a
long-term stable power output is obtained. By designing the hardware and software of the control system and conduct-
ing long-term experiments in the laboratory, we found that the system can guarantee the output power within 1 W of
PD (Proportional-Differential) LD, and its long-term power stability can reach 1%. This system has a certain reference
significance in using semiconductor lasers for high-quality detection when there are stringent requirements for power.

Keywords
Technology of measurement and control, controllable constant current source, power collection, semiconductor refrig-
eration device

Date received: 5 January 2019; accepted: 25 February 2019

Introduction power, center wavelength and spectral characteris-

tics.8,9 For example, a change of the current of a certain
Due to their many advantages, such as high efficiency, type of laser will cause a drift of the output wavelength
small size, light weight, high reliability and direct mod- of about 0.01 nm/mA. A change of temperature will
ulation capability, semiconductor lasers have been cause a change of the output wavelength of 0.1 nm/°C.
widely used in many fields, such as material detection, These changes directly jeopardize its performance and
environmental monitoring, component analysis and safety.10,11 Therefore, the driving current and the oper-
optical storage.1,2 In a high-precision detection system, ating temperature are key factors that determine the
there are strict requirements for the semiconductor work performance of the semiconductor laser.
laser’s output optical power, center wavelength and the Therefore, the key steps in the design of the semicon-
spectral characteristics, and minor variations of these ductor laser driving circuit with high-precision stable
will affect the accuracy of the detection results.3–5 The
semiconductor laser is a device with high power density
and extremely high quantum efficiency. At the same
time, it is a relatively sensitive device. According to the School of Electronic & Control Engineering, Chang’an University, Xi’an,
working principle and basic electrical characteristics of China
the semiconductor laser,6,7 it is known that the small
Corresponding author:
changes of the current that is injected into the semicon- Huifeng Wang, School of Electronic & Control Engineering, Chang’an
ductor laser and of the operating temperature can both University, Xi’an 710064, Shaanxi, China.
cause remarkable changes in the device’s output optical Email: [email protected]

Creative Commons CC BY: This article is distributed under the terms of the Creative Commons Attribution 4.0 License
(http://www.creativecommons.org/licenses/by/4.0/) which permits any use, reproduction and distribution of the work without
further permission provided the original work is attributed as specified on the SAGE and Open Access pages (https://us.sagepub.com/en-us/nam/
open-access-at-sage).
2 Measurement and Control

power output are the injection of current, temperature for semiconductor lasers using other lasers. The laser
control and power stable control. which is the output of CCD collection, the interferom-
Since the advent of automatic semiconductor lasers, eter and the method of sinusoidal phase modulation
the design of their driving and control circuits has are used to adjust the laser’s operating temperature,
always been the focus of attention. Researchers at thereby achieving highly accurate modulation of the
home and abroad have also conducted extensive output of the semiconductor laser.25
research on this and achieved certain results. At pres-
ent, lasers with drive currents of tens to hundreds of
amperes have been designed abroad.12 The US com-
Characteristics of semiconductor lasers
pany Wavelength Electronics13 is a technology leader Semiconductor lasers work by subjoining the energizing
in the field of semiconductor lasers driving in foreign working medium additionally. The working medium is
countries. There are many products in the laser driving a PN junction or a PIN junction. The temperature has
field, such as the LDTC2/2E, whose maximum current a great influence on the PN junction,26 and the semi-
can reach 2.2 A, the microwave is 50 ppm of 24 h con- conductor laser’s threshold characteristics and output
stant current driving and the temperature stability can power wavelength can both be affected by changes of
reach one thousandth of a degree. The US Company temperature. At the same time, the stability of the laser
ILX Lightwave14 provides a laser driver, temperature output power depends on the stability of the semicon-
controller and fixture device. The company’s desktop ductor laser injection current, so it is necessary to ana-
laser driver can provide continuous adjustable or lyze both its P–I characteristics and temperature
pulsed drive current from 100 mA to 6 A, which can characteristics.
effectively ensure the output of the laser stabilization
wavelength. The LPS1-2T15 series of semiconductor
laser drivers produced by the German company P–I/U–I characteristics
ALPHALAS can reach the highest 100 A of driving The P–I characteristic is shown in Figure 1(a). The
capacity. Its temperature control accuracy is 0.001° and characteristic curve shows the correlation between the
it also includes a good protection alarm device. The output optical power P and the injection current value
AVTECH multinational company is famous for specia- I. When the current on the LD increases, the optical
lizing in the production of miniaturized high-speed power also increases slowly. When the current on the
pulse sources and the model of its production is LD reaches a certain value, the optical power increases
AVOZ-AIA-B and AV1011-B of drive power supply. sharply and the LD emits laser light. The current at this
The electric pulse peak can reach 2 A, the pulse width is moment is the threshold current and is marked as Ith .
100 ns, the pulse rise time is only 10 ns and the repeat The working power of laser is positively correlated with
frequency can reach 1 MHz. The dynamic power sup- the working power of laser power supply. In a certain
ply pulse width is less than 50 ns, the repeat frequency range, the output power of laser power is adjusted by
is 1 MHz and the peak current is 12 A, in DEI com- adjusting the output current of laser power supply. The
pany’s PCO-7210. The IC-W series semiconductor laser U–I characteristic is shown in Figure 1(b). The charac-
control chip developed by Germany’s IC-Haus com- teristic curve shows the correspondence between the
pany pays attention to the integration of the unit cir- voltage U across the LD and the injection current value
cuit.16,17 A large number of circuits are integrated in a I. When the injection current is small, the voltage rises
small chip, with ripple cancelation, soft start and stable slowly and irregularly, but when the injection current
output current and can be modulated by external sig- exceeds a certain value, the injection current and vol-
nals, also achieving other functions.18 Italian research- tage have a linear relationship.
ers have changed the injection current of the laser by
detecting the change of photocurrent of the photocell
until the output power is stable at the set value.19 In
Temperature characteristics
Japan, the method proposed by Yamaguchi et al. is Because the LD is a thermal power device, as its oper-
that the characteristics of the output laser are obtained ating time increases, the temperature of the PN junc-
by measuring the phase offset, then fed back to the tion also rises. At the same time, as an electron–photon
computer and processed, thereby further changing the conversion device, the LD cannot convert 100% of the
injection current of the laser and achieving modulation electrical energy into light energy. Part of the electrical
of the laser.20,21 In the United Kingdom, Hancock energy will be converted to heat and this will cause the
et al.22 also proposed a similar method, where the CCD temperature of the LD to rise sharply.27,28 The tem-
(Charge-Coupled Device) and sinusoidal phase modu- perature change will have a great impact on various
lation are used to modulate the input current of the performance indicators of the LD, such as the size of
semiconductor laser, so that the modulated laser signal the output optical power, the output wavelength, the
has higher accuracy. The method of using photother- size of the threshold current and a series of other indi-
mal to modulate the semiconductor laser has also been cators.29,30 Figure 2 reflects the changes of optical
the subject of early research in the United States and power in the wake of a change of injection current at
Japan.23,24 Takamasa et al. studied temperature control different temperatures.
Huang et al. 3

(a) (b)

Figure 1. P–I/U–I characteristic curve: (a) P–I curve and (b) U–I curve..

It can be seen from Figure 2 that: (1) With the rise in

temperature, the abscissa which is corresponding to the
inflection point of the P–I curve gradually shifts to the
right, that is, the threshold current of the LD gradually
increases. This shows that when the temperature is
higher, only a bigger current is injected can be success-
fully drive the LD. (2) When the temperature is con-
stant and the injection current of the LD is greater than
the threshold current, the output optical power P and
the injection current value I have a linear relationship.
That is, the output optical power of the LD increases as
the injection current increases. When the injection cur-
rent of the LD is greater than the threshold current, the
slope of the P–I characteristic curve decreases as the
temperature increases; in the case that the injection cur-
rent is the same, the higher the temperature, the lower
the output optical power of the LD.
Figure 2. Temperature characteristic curve.

Overall scheme of stable power drive of

semiconductor lasers negative feedbacks. The internal negative feedback is
the current loop and the current signal is used as the
It can be seen from the above analysis that in a constant amount of feedback. Eventually, it reaches a state of
temperature environment, as long as the injection cur- dynamic balance of negative feedback and achieves a
rent of the laser is well controlled, the output power of stable output of optical power.
the laser can also be conveniently controlled. Therefore, After sampling and amplifying, the size of the injec-
the output optical power of the laser can be accurately tion current of the semiconductor laser is determined
detected by detecting the photocurrent, and then under jointly by the current signal and the control voltage.
a constant temperature environment, its injection cur- The current loop can minimize the current deviation to
rent is adjusted to achieve the stable power drive of the the utmost extent. It can effectively reduce the errors
semiconductor laser. caused by internal and external factors and maintain
the stability of the injection current. The external nega-
tive feedback control system is the power loop, that is,
Three closed-loop table power model design of laser the optical power of the LD is used as the feedback sig-
The block diagram of the principle of the LD stable nal. The power signal’s collection converts the optical
power drive is shown in Figure 3. It is a negative feed- signal into an electrical signal using the photodiode,
back and double closed-loop control system, which and then feeds it back to the input through sampling,
consists of input quantity, output quantity, controlled amplifying and other links, and controls the output
object and measuring components and so on. The out- optical power of the LD. The outermost is the tempera-
put quantity is the optical power of the LD. The con- ture loop and by collecting the temperature signal of
stant power drive circuit of the LD includes three the PN junction, the control signal of the output, which
4 Measurement and Control

Figure 3. Block diagram of stable power drive.

Figure 4. Overall block diagram of the LD constant power

control hardware..

after the temperature deviation is passed through the Figure 5. Sectional view of structure model of semiconductor
PI regulator, is calculated. The semiconductor cooling LD and its fixed device.
sheet is controlled to adjust the temperature of the PN
junction and make it constant. This multi-closed-loop
negative feedback control system has greater stability change of the semiconductor laser by the PD
and an anti-interference capability; that is, the LD (Proportion-Differential) terminal and converts it to a
injection current is more stable and the output optical digital signal by the A/D (Analog/Digital) conversion
power accuracy is higher. circuit. The temperature loop includes the temperature
detection circuit, the refrigeration drive circuit and the
fan drive circuit; a PWM (Pulse Width Modulation)
Hardware design scheme of lasers constant power drive is used in this part to digitally adjust its output.
drive
According to the above functions to be realized and the Structural model of laser’s controlled object
corresponding LD constant power drive performance The controlled object is the semiconductor laser and its
index, the overall block diagram of the LD constant fixed device. A sectional view of its structural model is
power control hardware is designed as shown in Figure shown in Figure 5. It mainly includes the optical sys-
4. The current loop directly selects the high-precision tem, the heat-conducting housing, the laser tube, the
controlled constant current source chip LT3080 which constant temperature chamber, the thermoelectric
has a closed-loop design. The maximum output current cooler (TEC) and the heat-conducting plate compo-
is 1.1 A and its interior has the high-precision reference nents, the heat-dissipating fin,31,32 the heat-dissipating
current source. The microcontroller can digitally adjust fan and other parts. The laser, the heat-conducting
its output current via the conversion circuit and the housing and the constant temperature chamber are
minimum adjustment accuracy is 0.5 mA. The power filled with a heat-conducting material. The TEC is fixed
detection circuit of the power loop detects the power on one side of the heat-conducting copper plate and
Huang et al. 5

Figure 7. Control principle of power loop.

the laser diode, is sampled to control the current size

which is injected into the laser diode, and eventually a
dynamic equilibrium state of negative feedback is
reached, realizing accurate control of the LD’s current
and stable output. Digital regulation of the output cur-
rent can be achieved by adjusting the resistance.

Figure 6. Operating principle of the current loop. Power loop

The power loop is a negative feedback control circuit
that detects and feeds back the LD output optical
the heat-dissipating fin is fixed on the other side. A power through the photodiode, which is packaged in
heat-dissipating fan is mounted on the top of the heat- the LD interior.34 The power loop is the outer loop and
dissipating fin,33 and the object can be equivalent to a is the constant power control system, which is com-
time-delay nonlinear system with large inertia. posed of input quantity, output quantity, the controlled
object, the measuring element and so on. Its input
quantity is the set power, and it is converted through
Stable power drive circuit of
the microcontroller into a digital signal, and the signal
semiconductor lasers is provided by the digital potentiometer. The controlled
Current loop object is the LD control voltage (potentiometer resis-
tance). After further adjusting and stabilizing for the
The constant power drive of the LD is a double closed-
injection current through the current loop, the output
loop control system. Its inner loop is the current loop,
quantity, that is, the optical power, can be obtained.
that is, the constant current control. The constant cur-
The precision resistor, in series with the photodiode,
rent design is shown in Figure 6. The current loop is a
will form a feedback quantity after sampling for the
constant current control system, which is composed of
optical power. The feedback quantity is processed by
input quantity, output quantity, controlled object, mea-
the amplifying circuit and fed back from the A/D port
suring element and so on.
to the input terminal; it determines the control voltage
In Figure 6, LD represents the laser diode. The sam-
with the presented power together.
pling resistor R of the LD is a precision resistor of 1 O.
The current signal is converted into the voltage by the
output current limiting resistor. It is fed back to the Analysis of power loop principle. Figure 7 shows the simpli-
‘SET’ terminal through regulating the potentiometer by fied circuit of the power loop. As shown in Figure 7,
the output current and it can allow the output current the photodiode converts the optical signal reflected by
to be adjustable. The LT3080 requires only a small the LD resonant cavity into an electrical signal, that is,
feedback resistor to achieve a constant current source the photocurrent IPD. After being sampled by the high-
with excellent performance and according to the vol- precision sampling resistor, the voltage signal, which is
tage change of the constant current source on the Rset positive proportional to the output optical power, is
to adjust obtained. After processing the voltage signal, it is com-
Rset 310uA pared with the preset value to adjust the control voltage
IOUT = ð1Þ of the current loop, and then the injection current of
1O
the laser diode is regulated further to maintain the sta-
The output quantity of the current loop is the injec- bility of the optical power.
tion current of the LD. The laser diode is taken as the According to the performance index of the LD con-
controlled object, the precision resistor, in series with stant power drive circuit, the relationship between the
6 Measurement and Control

Figure 9. The refrigeration, fan drive circuit.

Figure 8. Circuit schematic diagram of power loop.

sampling by the sampling resistor, the voltage is ampli-
fied by the amplified circuit of which take TLC2252 is
injection current ILD of the laser diode and the control taken as the core and then the feedback signal
voltage VC is V_PD_GAIN is formed by the voltage follower. The
VC = ILD RLD AIF ð2Þ signal is sent to the A/D port of the microcontroller,
and the control voltage is sent to the D/A (Digital/
where RLD is the sampling resistor of the laser diode Analog) digital potentiometer in the way of I2 C after
and AIF is the feedback coefficient of the current loop. being processed by the STM8S core unit.
According to the analysis of the current loop in the pre-
vious section, it is known that the injection current is
500 mA when the control voltage is 2.5 V, the sampling Temperature loop
resistor of the laser diode is RLD = 0:5 O and the feed-
The temperature loop is an important circuit to ensure
back coefficient of the current loop is AIF = 10, that is
the normal operation of the system. The temperature
VC (V) = 5ILD (A) ð3Þ control circuit in this design is a separate closed-loop
control system. The loop mainly includes the tempera-
From equations (2) and (3), the relationship between ture detection circuit, the semiconductor refrigeration,
the injection current ILD of the laser diode and photo- the fan drive circuit, the optocoupler isolation circuit,
current IPD can be obtained and that equation is the power conversion circuit and so on. Part of the per-
IPD = kILD ð4Þ ipheral circuit is shown in Figure 9. The 12 V stabilized
voltage supply is used for refrigerating and the tem-
where K = a  b, according to the negative feedback perature control system is also the negative feedback
theory, and the relationship between the photocurrent circuit. The circuit realizes the isolation between digital
IPD and the power given value V0 in the power loop and analog signals and it can prevent signal interfer-
can be obtained and that equation is ence to a great extent. Further aspects of the tempera-
ture control parts are not discussed in detail here.35
V0 = APF IPD RPD ð5Þ
where RPD represents the sampling resistor of photo-
diode, and APF represents the feedback coefficient of The implementation of the control
the power loop . And because V0 = VC , equations (3)– algorithm
(5) are combined and it can be obtained that
A PI controller is often used in the feedback control
VC VC system. The traditional PI control method is simple in
APF RPD = = = RLD AIF ð6Þ structure and easy to implement. It can meet the needs
IPD ILD  k
of most designs, but the ordinary PI control algorithm
Through repeatedly conducting experimental tests cannot meet the requirements of a system for which the
(controlling the injection current of the laser diode and accuracy is required is higher.36 Meanwhile, the neural
observing the corresponding current generated by the network algorithm has a self-learning ability and can
photodetector tube), k = 0:8 is measured, the final set- infinitely approaching a nonlinear function. Therefore,
ting RPD is 30 O, and APF is 8. According to the ampli- in order to improve the stability of the LD output opti-
fied gain, the corresponding resistance value can be cal power, we adopt a control method combining a
designed. In order to prevent signal interference from back propagation (BP) neural network algorithm35,36
reducing the ripple coefficient, it is necessary to add and a PI algorithm to achieve a stable output of
multiple filter circuits in the circuit under the premise power.37 The structure of the LD constant power PI
of realizing the basic functions. control system based on the BP neural network is
shown in Figure 10.
Power loop circuit. In Figure 8, PD represents the photo- The incremental PI algorithm is shown in equation
diode, the sampling resistor of PD (R = 30 O, the accu- (7), where KP , KI represent the proportion and the inte-
racy is 0.1%). The feedback voltage is formed after gral constant, respectively; r(k) and y(k) are the input
Huang et al. 7

The link of voltage comparison

DU = VC  VO ð10Þ
Neural PI algorithm controller
ðt
1
U = KP DU + DUdt ð11Þ
t
0

From the above formula, it can be obtained that the

block diagram of the LD power feedback system struc-
Figure 10. Block diagram of BP neural network PI control ture can be obtained, as shown in Figure 11.
algorithm. Using MATLAB to simulate the constant power
control system of the lasers, the BP neural network PI
algorithm is set as follows: the structure of the neural
network selects 3-5-2, the learning rate is h = 0:05, the
inertial coefficient is a = 0:18. The simulation results
of the BP neural network PI algorithm are shown in
Figures 12 and 13.

Experiments
Figure 11. Block diagram of LD power feedback system
structure. According to the above principles and circuits, we have
designed and manufactured a stable power control cir-
cuit of the laser, as shown in Figure 14(a). The output
quantity and output quantity of the system, that is, the laser power with a wavelength of 940 nm is tested in the
set power and the output actual power, respectively; laboratory. The constant power modules of the laser
u(k) and e(k) are the output quantity and input quantity are connected with the laser power detection probes, as
of the BP neural network PI controller, that is, the con- shown in Figure 14(b). The output optical power of the
trol voltage and the difference of power, respectively; k laser is measured continuously using the computer out-
is the sampling number. According to Figure 10, it can put interface of the optical power meter and the drive
be obtained that current is sampled and transmitted by a current sam-
8 pling circuit.
< e(k) = r(k)  y(k)
u(k) = u(k  1) + Du(k) ð7Þ
: Power stability test
Du(k) = Kp ½e(k)  e(k  1) + KI e(k)
In the laboratory, a power meter was used to measure
When KP and KI are regarded as the adjustable coef-
the power of the designed constant power driven laser
ficients of the system, the neural network PI algorithm
(with a power stable point of 493 mW), and the output
can be seen as a nonlinear function related to KP , KI ,
value of the laser was continuously recorded, as shown
u(k), u(k  1) and so on. The control algorithm can be
in Figure 15. It can be seen that the long-term stability
expressed as
of the output power (20–30 h) fluctuated within 66 mW
  when the closed loop was closed, and the power was on
u(k) = f e(k  1), Kp , KI , u(k  1) ð8Þ
the rise. The short-term (30–40 min) power stability
In order to verify the control effect of the BP neural fluctuates within 63 mW, and it can be seen that the
network PI algorithm, a MATLAB simulation experi- circuit can achieve short-term and long-term stable out-
ment was conducted. First, the LD mathematical model put of the power drive of 2%.
of power feedback control is established. The stable
state relationship of each link can be obtained by the
previous analysis, as follows.
Current stabilization experiment
The relationship between the injection current ILD of In order to check the stability of the current situation
the laser diode, the control voltage VC , the output opti- under the condition of stable power, the current acqui-
cal power P, the current IPD of the photodetector tube sition circuit of the power point for collection and
and the feedback voltage V0 is recording was used in the laboratory. As shown in
8 Figure 16, in the closed-loop state (12 h), the long-term
>
> VC = ILD RLD AIF stability of the current fluctuates within 62 mA, and
<
P = a  ILD the short-term stability can remain within 61.5 mA.
ð9Þ
>
> I =b  P Perhaps due to temperature changes in the drive circuit,
: PD
V0 = APF IPD RPD the current has a slight upward trend.
8 Measurement and Control

Neural PI controller output

Output
(a) (b)

Parameter
Error

Parameter

(c) (d)

Figure 12. Response curve: (a) output y(k) of system, (b) output of neural network PI controller, (c) output of u(k) error and (d)
output of Du(k) KP, KI..

It can be seen that the optical power output of the

laser can reach 1000 mw and its long-term stability
(48 h continuous) is within 2%. This meets the require-
ments of high-precision detection for the stability of
the laser.

Conclusion
The laser has been widely used in industry, agriculture,
medicine, precision measurement, holographic technol-
ogy and other aspects, especially in the field of medical
detection. The state explicitly requires blood stations
and laboratories to use instruments to evaluate the
results of enzyme-linked immunosorbent assay
(ELISA). Enzyme standard colorimetric determination
is the most basic function, the most basic requirement
is that in a certain range of absorbance has better accu-
racy and precision, and can automatically accurately
control the temperature of the instrument, this article
through the research of the working characteristics of
lasers designed a stable temperature characteristics of
Figure 13. Flow diagram of BP neural network PI algorithm. high-precision laser drive systems, mainly for medical
Huang et al. 9

(a) (b)

Figure 14. Control board of constant power drive and the experiment system of power measurement: (a) PCB board of constant
power drive and (b) power measurement experiment.

Figure 15. Power stability test curve: (a) permanent power stability, (b) short-term power stability, (c) 0–2400 min power curve
and (d) 400–800 min power curve.

Figure 16. Current stability test curve: (a) current stability and (b) current curve.
10 Measurement and Control

enzyme standard instrument in colorimetric determina- 6. Hastie JE, Morton LG, Kemp AJ, et al. Tunable ultra-
tion accuracy, precision and temperature requirements, violet output from an intracavity frequency-doubled red
to experiment to provide accurate, reliable and objec- vertical-external-cavity surface-emitting laser. Appl Phys
tive results. Aiming at the stringent requirements of the Lett 2006; 89(6): 1063.
detection using semiconductor lasers for laser output 7. Li Y, Zou J, Gan Q, et al. Analysis and measurement on
drive current characteristics of 905 nm InGaAs pulse
power stability, a medium power semiconductor laser
laser diodes. Laser Technol 2017; 41(6): 803–806.
stable power control system based on the three closed 8. Wang H, Huang W, Zhou Z, et al. Operating character-
loops is proposed on the basis of the analysis of the istics of laser diode arrays. Laser Technol 2002; 26(1):
laser’s P–I/U–I characteristics and temperature charac- 23–25.
teristics, and a constant power control drive device for 9. Yu H, Suo L, Su M, et al. Thermal characteristic test on
the semiconductor laser is designed. A model of the laser diode. Laser J 2012; 33(1): 30–32.
power control system based on neural PI is established 10. Ren L. Research of driver and temperature control system
and its core control algorithm is analyzed. Experiments for semiconductor laser. University of Electronic Science
show that the system can guarantee the requirements of and Technology of China, Chengdu, China, 2013.
the detection using semiconductor lasers for power 11. Thompson MT and Schlecht MF. High power laser diode
driver based on power converter technology. IEEE T
long-term power stability. The control system is simple,
Power Electr 1997; 12(1): 46–52.
flexible, low cost performance, and it can meet the tech-
12. Welch DF. A brief history of high-power semiconductor
nical index requirements of the detection using semi- lasers. IEEE J Sel Top Quant 2000; 6(6): 1470–1477.
conductor lasers for long-term power stability. 13. Wavelength product catalog, https://www.teamwave
length.com/product-category/laser-diode-drivers
Acknowledgements 14. ILX lightwave laser diode controller, https://www.new
port.com.cn/b/ilx-lightwave
The authors thank the editors and the anonymous reviewers 15. Digital laser diode driver and dual TEC controller: LPS1-
for their valuable comments that helped to improve the paper. 2T series, http://www.alphalas.com/
16. Zhang A, Zhou M, Cai Z, et al. Design of a new-style
Declaration of conflicting interests and high-stability LD drive power supply. In: Interna-
tional conference on anti-counterfeiting, security, and iden-
The author(s) declared no potential conflicts of interest with
tification in communication, Hong Kong, China, 20–22
respect to the research, authorship and/or publication of this
August 2009, pp. 238–241. New York: IEEE.
article.
17. Luo L, Jiacheng HU, Wang C, et al. Design of high-
precision driving power and temperature control circuit
Funding for semiconductor laser. Laser Technol 2017; 41(02): 200–
204.
The work was supported the Shaanxi Province Postdoctoral
18. iC-Haus products datasheet, http://www.ichaus.de/key
Science Fund (no. 2017BSHEDZZ40), National Science
word/Laser%20Diode%20and%20LED%20Drivers
Foundation of Shaanxi Province (no. 2018JM6023) and
19. Mariani T, Frediani C and Ascoli C. Simple, linear, and
Science and Technology Project of Shaanxi Provincial
safe light control for laser diodes. Rev Sci Instrum 1997;
Transportation Department (nos 17-16K, 17-33T).
68(6): 2594–2595.
20. Liu JY, Yamaguchi I, Kato JI, et al. Active phase-shifting
ORCID iD interferometer using current modulation of a laser diode.
Huifeng Wang https://orcid.org/0000-0002-0389-7533 Opt Rev 1996; 3(4): 287–292.
21. Ishii Y. Wavelength-tunable laser-diode interferometer.
Opt Rev 1999; 6(4): 273–283.
References 22. Hancock G, Kasyutich VL and Ritchie GAD. Wave-
1. Figueroa L. Diode laser radar: applications and technol- length-modulation spectroscopy using a frequency-
ogy. In: Laser-diode technology and applications II, pro- doubled current-modulated diode laser. Appl Phys B
ceedings of the meeting, Los Angeles, CA, 16–19 January 2002; 74(6): 569–575.
1990, pp. 446–456. Bellingham, WA: Society of Photo- 23. Klimcak CM and Camparo JC. Photothermal wave-
Optical Instrumentation Engineers. length modulation of a diode laser. J Opt Soc Am B 1988;
2. Wang L, Ning Y, Qin L, et al. Development of high 5(2): 211–214.
power diode lasers. Chin J Lumin 2015; 36(1): 1–19. 24. Mishima K. Frequency control of a laser diode by a
3. Huang J, Zhai B, He Q, et al. A temperature controller photothermal effect and its application to frequency sta-
for near-infrared semiconductor laser used in gas detec- bilization. Opt Eng 1994; 33(9): 2992–2996.
tion. Acta Photon Sin 2014; 43(6): 36–41. 25. Zhao X, Suzuki T and Sasaki O. Photothermal phase-
4. Tan Z, Long X and Li F. Temperature control circuit of modulating laser diode interferometer with high-speed
semiconductor laser for the spectroscopy detection of feedback control. Opt Rev 2002; 9(1): 13–17.
trace gas. Chin J Sci Instrum 2006; 27(6): 1909–1910. 26. Zhang X, Li D, Chen Y, et al. Research on drive and control
5. Khan D, Shirazi MA and Min YK. Single shot laser technology of external modulated DFB laser diode. In: Inter-
speckle based 3D acquisition system for medical applica- national conference on electronic measurement & instruments,
tions. Opt Laser Eng 2018; 105: 43–53. Beijing, China, 16–19 August 2009. New York: IEEE.
Huang et al. 11

27. Roselli L, Borgioni V, Zepparelli F, et al. Analog laser 33. Cheng Y, Xin D and Zhang J. Research on the key tech-
predistortion for multiservice radio-over-fiber systems. J nology of the emission system for semiconductor laser
Lightwave Technol 2003; 21(5): 1211–1223. range finder. In: International conference on optoelectro-
28. Tucker R. Large-signal circuit model for simulation of nics and microelectronics, Changchun, China, 23–25
injection-laser modulation dynamics. IEE Proc I 1981; August 2012, pp. 56–60. New York: IEEE.
128(5): 180–184. 34. Chen FZ, Wang JY, Song YC, et al. High efficiency syn-
29. Yao N, Zhong L and Ma X. Life prediction of 808 nm chronous pulse laser driver system. In: Future energy elec-
high power semiconductor laser by accelerated life test of tronics conference and ECCE Asia, Kaohsiung, Taiwan,
constant current stress. SPIE Proc 2016; 9671: 96710H. 3–7 June 2017. New York: IEEE.
30. Long Z, Pan Z, Li C, et al. Constant amplitude control 35. Liu Y, Zhang Z, Liu L, et al. Research and simulation of
of high-power ultrasonic drive system. In: IEEE interna- PID controller based on BP neural network algorithm.
tional conference on information and automation, Hailar, Electron Des Eng 2012; 20(12): 140–142.
China, 28–30 July 2014, pp. 582–586. New York: IEEE. 36. Ren Y, Yang Y, Zeng Q, et al. Application of BP neural
31. Parashchuk VV. On efficiency of power diode lasers using network PID controller in temperature control of poly-
diamond heat sinks. Mater Today Proc 2016; 3: S165–S170. merizer. Mod Chem Ind 2016; 36(2): 165–167.
32. Guo P, Lin X, Ren Y, et al. Microstructure and electro- 37. Li J, Wang J, Ma T, et al. Design of DC voltage with
chemical anodic behavior of Inconel 718 fabricated by PID control of shunt active power filter based on BP
high-power laser solid forming. Electrochim Acta 2018; neural network. Power Syst Clean Energy 2012; 28(6):
276: 247–260. 74–77.