Si7454FDP

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Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PowerPAK® SO-8 Single
FEATURES
D • TrenchFET® Gen IV power MOSFET
D 8
D 7 • Very low RDS x Qg figure-of-merit (FOM)
D 6
5 • Tuned for the lowest RDS x Qoss FOM
• 100 % Rg and UIS tested
• Material categorization: for definitions of
6. 1
15 2 S
compliance please see www.vishay.com/doc?99912
m
m m 3 S
5m
1 5.1 4 S APPLICATIONS D
G
Top View Bottom View • Synchronous rectification
• Primary side switch
PRODUCT SUMMARY
VDS (V) 100
• DC/DC converters
G
RDS(on) max. () at VGS = 10 V 0.0295 • Power supplies
RDS(on) max. () at VGS = 4.5 V 0.034 • Motor drive control
Qg typ. (nC) 8
S
ID (A) 23.5
N-Channel MOSFET
Configuration Single

ORDERING INFORMATION
Package PowerPAK SO-8
Lead (Pb)-free and halogen-free Si7454FDP-T1-RE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 100
V
Gate-source voltage VGS ± 20
TC = 25 °C 23.5
TC = 70 °C 18.8
Continuous drain current (TJ = 150 °C) ID
TA = 25 °C 7.2 b, c
TA = 70 °C 5.7 b, c
A
Pulsed drain current (t = 100 μs) IDM 40
TC = 25 °C 35.5
Continuous source-drain diode current IS
TA = 25 °C 3.3 b, c
Single pulse avalanche current IAS 15
L = 0.1 mH
Single pulse avalanche energy EAS 11.25 mJ
TC = 25 °C 39
TC = 70 °C 25
Maximum power dissipation PD W
TA = 25 °C 3.6 b, c
TA = 70 °C 2.3 b, c
Operating junction and storage temperature range TJ, Tstg -55 to +150
°C
Soldering recommendations (peak temperature) c 260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b t  10 s RthJA 24 34
°C/W
Maximum junction-to-case (drain) Steady state RthJC 2.5 3.2
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 70 °C/W
g. TC = 25 °C

S20-0882-Rev. A, 16-Nov-2020 1 Document Number: 79350

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - V
VDS temperature coefficient VDS/TJ ID = 1 mA - 86 -
mV/°C
VGS(th) temperature coefficient VGS(th)/TJ ID = 250 μA - -4.6 -
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.4 V
Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - 100 nA
VDS = 100 V, VGS = 0 V - - 1
Zero gate voltage drain current IDSS μA
VDS = 100 V, VGS = 0 V, TJ = 70 °C - - 15
On-state drain current a ID(on) VDS  10 V, VGS =10 V 20 - - A
VGS = 10 V, ID = 10 A - 0.0246 0.0295
Drain-source on-state resistance a RDS(on) 
VGS = 4.5 V, ID = 10 A - 0.0281 0.034
Forward transconductance a gfs VDS = 15 V, ID = 10 A - 33 - S
Dynamic b
Input capacitance Ciss - 1110 -
Output capacitance Coss VDS = 50 V, VGS = 0 V, f = 1 MHz - 73 - pF
Reverse transfer capacitance Crss - 4 -
VDS = 50 V, VGS = 10 V, ID = 10 A - 17.4 26.5
Total gate charge Qg
- 8 12
Gate-source charge Qgs VDS = 50 V, VGS = 4.5 V, ID = 10 A - 3.9 - nC
Gate-drain charge Qgd - 1.9 -
Output charge Qoss VDS = 50 V, VGS = 0 V - 11.5 -
Gate resistance Rg f = 1 MHz 0.3 0.9 1.6 
Turn-on delay time td(on) - 9 18
Rise time tr VDD = 50 V, RL = 5 , ID  10 A, - 5 10
Turn-off delay time td(off) VGEN = 10 V, Rg = 1  - 19 38
Fall time tf - 4 8
ns
Turn-on delay time td(on) - 15 30
Rise time tr VDD = 50 V, RL = 5 , ID  10 A, - 16 32
Turn-off delay time td(off) VGEN = 4.5 V, Rg = 1  - 19 38
Fall time tf - 6 12
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS TC = 25 °C - - 35.5
A
Pulse diode forward current ISM - - 40
Body diode voltage VSD IS = 5 A, VGS = 0 V - 0.8 1.1 V
Body diode reverse recovery time trr - 32 64 ns
Body diode reverse recovery charge Qrr IF = 5 A, di/dt = 100 A/μs, - 40 80 nC
Reverse recovery fall time ta TJ = 25 °C - 25 -
ns
Reverse recovery rise time tb - 8 -
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S20-0882-Rev. A, 16-Nov-2020 2 Document Number: 79350

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Si7454FDP
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title Axis Title

60 10000 60 10000
VGS = 10 V thru 4 V

48 48
ID - Drain Current (A)

ID - Drain Current (A)

1000 1000
36 36

2nd line

2nd line
1st line

1st line
2nd line

2nd line
24 24
VGS = 3 V 100 TC = 25 °C 100

12 12
TC = -55 °C
TC = 125 °C
VGS = 2 V thru 0V
0 10 0 10
0 1 2 3 4 5 0 1.2 2.4 3.6 4.8 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

Axis Title Axis Title

0.0400 10000 10 000 10000

0.0360 Ciss
(Ω)

1000
C - Capacitance (pF)
RDS(on) - On-Resistance

1000 1000
0.0320 VGS = 4.5 V
2nd line

2nd line
1st line

1st line
2nd line
2nd line

100
Coss
0.0280
100 100
10
0.0240
VGS = 10 V Crss

0.0200 10 1 10
0 10 20 30 40 50 0 16 32 48 64 80
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current and Gate Voltage Capacitance

Axis Title Axis Title

10 10000 2.5 10000
RDS(on) - On-Resistance (Normalized)

ID = 10 A
VGS - Gate-to-Source Voltage (V)

8 2.1
VGS = 10 V, 10 A
1000 1000
6 1.7
2nd line

2nd line
1st line

1st line
2nd line

2nd line

4 VDS = 25 V, 50 V, 75 V 1.3
100 100
VGS = 4.5 V, 10 A

2 0.9

0 10 0.5 10
0 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

S20-0882-Rev. A, 16-Nov-2020 3 Document Number: 79350

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Si7454FDP
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title Axis Title

100 10000 0.5 10000

0.2
10
IS - Source Current (A)

VGS(th) - Variance (V)

1000 1000
-0.1

2nd line
2nd line
ID = 5 mA

1st line
1st line

2nd line
2nd line

TJ = 150 °C TJ = 25 °C
1
-0.4
100 100
0.1 ID = 250 μA
-0.7

0.01 10 -1.0 10
0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 125 150
VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C)

Source-Drain Diode Forward Voltage Threshold Voltage

Axis Title Axis Title

0.15 10000 200 10000

ID = 10 A
0.12 160
RDS(on) - On-Resistance (Ω)

1000 1000
P - Power (W)

0.09 120
2nd line

2nd line
2nd line
1st line

1st line
2nd line

TJ = 125 °C

0.06 80
100 100

0.03 40
TJ = 25 °C

0 10 0 10
0 2 4 6 8 10 0.001 0.01 0.1 1 10
VGS - Gate-to-Source Voltage (V) t - Time (s)

On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient

Axis Title
100 10000
IDM limited

100 μs
10 ID limited
ID - Drain Current (A)

1000
1 ms
2nd line
1st line
2nd line

1 a
Limited by RDS(on)
10 ms
100
100 ms
0.1
1s
TA = 25 °C, 10s
single pulse BVDSS limited
DC
0.01 10
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)

Safe Operating Area, Junction-to-Ambient

Note
a. VGS > minimum VGS at which RDS(on) is specified

S20-0882-Rev. A, 16-Nov-2020 4 Document Number: 79350

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Si7454FDP
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title
30 10000

24

ID - Drain Current (A)

1000
18

2nd line
1st line
2nd line
12
100

0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)

Current Derating a

Axis Title Axis Title

50 10000 2.5 10000

40 2.0

1000 1000
P - Power (W)

P - Power (W)

30 1.5
2nd line

2nd line
1st line

1st line
2nd line

2nd line

20 1.0
100 100

10 0.5

0 10 0 10
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TC - Case Temperature (°C) TA - Ambient Temperature (°C)

Power, Junction-to-Case Power, Junction-to-Ambient

Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit

S20-0882-Rev. A, 16-Nov-2020 5 Document Number: 79350

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Si7454FDP
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title
1 10000

Duty cycle = 0.5

Normalized Effective Transient
Thermal Impedance

0.2 Notes 1000

2nd line
1st line
PDM
0.1 0.1
t1
0.05 t2
t1 100
0.02 1. Duty cycle, D = t
2

2. Per unit base = RthJA = 70 °C/W

3. TJM - TA = PDMZthJA (t)
Single pulse
4. Surface mounted
0.01 10
0.0001 0.001 0.01 0.1 1 10 100 1000
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Axis Title
1 10000

Duty cycle = 0.5

Normalized Effective Transient

0.2
Thermal Impedance

1000
0.1

2nd line
1st line
0.1 0.05

0.02
100
Single pulse

0.01 10
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?79350.

S20-0882-Rev. A, 16-Nov-2020 6 Document Number: 79350

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
H L
E2 K
W E4

D4
θ
1 1

M
Z
2 2

D5
D

D1

D2
D
2
e
3 3

4 4

b
θ
L1
E3
A1 Backside View of Single Pad
θ θ
H L
E2 K
E4
A
c

D3 (2x) D4
E1 Detail Z 1
E
D1
2

D5
K1
D2
3
D2

b
Notes
1. Inch will govern.
2 Dimensions exclusive of mold gate burrs. E3
Backside View of Dual Pad
3. Dimensions exclusive of mold flash and cutting burrs.

MILLIMETERS INCHES
DIM.
MIN. NOM. MAX. MIN. NOM. MAX.
A 0.97 1.04 1.12 0.038 0.041 0.044
A1 - 0.05 0 - 0.002
b 0.33 0.41 0.51 0.013 0.016 0.020
c 0.23 0.28 0.33 0.009 0.011 0.013
D 5.05 5.15 5.26 0.199 0.203 0.207
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.56 3.76 3.91 0.140 0.148 0.154
D3 1.32 1.50 1.68 0.052 0.059 0.066
D4 0.57 typ. 0.0225 typ.
D5 3.98 typ. 0.157 typ.
E 6.05 6.15 6.25 0.238 0.242 0.246
E1 5.79 5.89 5.99 0.228 0.232 0.236
E2 3.48 3.66 3.84 0.137 0.144 0.151
E3 3.68 3.78 3.91 0.145 0.149 0.154
E4 0.75 typ. 0.030 typ.
e 1.27 BSC 0.050 BSC
K 1.27 typ. 0.050 typ.
K1 0.56 - - 0.022 - -
H 0.51 0.61 0.71 0.020 0.024 0.028
L 0.51 0.61 0.71 0.020 0.024 0.028
L1 0.06 0.13 0.20 0.002 0.005 0.008
 0° - 12° 0° - 12°
W 0.15 0.25 0.36 0.006 0.010 0.014
M 0.125 typ. 0.005 typ.
ECN: S17-0173-Rev. L, 13-Feb-17
DWG: 5881

Revison: 13-Feb-17 1 Document Number: 71655

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single

0.260
(6.61)
0.150
(3.81)

0.024
(0.61)

(3.91)

(4.42)
0.154

0.174
0.026
(0.66)
(1.27)
0.050

0.050 0.032 0.040

(1.27) (0.82) (1.02)

Recommended Minimum Pads

Dimensions in Inches/(mm)

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APPLICATION NOTE

Document Number: 72599 www.vishay.com

Revision: 21-Jan-08 15
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Revision: 01-Jan-2021 1 Document Number: 91000