PROFET® BTS 442 E2

Smart Highside Power Switch

Features Product Summary
• Overload protection Overvoltage protection Vbb(AZ) 63 V
• Current limitation
Operating voltage Vbb(on) 4.5 ... 42 V
• Short-circuit protection
• Thermal shutdown On-state resistance RON 18 mΩ
• Overvoltage protection (including load dump) Load current (ISO) IL(ISO) 21 A
• Fast demagnetization of inductive loads Current limitation IL(SCr) 70 A
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis TO-220AB/5
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input 5 5
• Loss of ground and loss of Vbb protection2) 5
• Electrostatic discharge (ESD) protection 1 1
Standard Straight leads SMD

Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays and discrete circuits

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.

R bb + V bb
3
Voltage Overvoltage Current Gate
source protection limit protection
V Logic
OUT
Voltage Charge pump Limit for
unclamped 5
sensor Level shifter ind. loads Temperature
Rectifier sensor
2 IN
Open load
Load
ESD Logic detection

4 ST
Short circuit
detection

GND PROFET
1
Signal GND Load GND

1) No external components required, reverse load current limited by connected load.

2) Additional external diode required for charged inductive loads
Semiconductor Group 1 of 14 2003-Oct-01
 BTS 442 E2
Pin Symbol Function
1 GND - Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3 Vbb + Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5 OUT O Output to the load
(Load, L)

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3) Vbb 63 V
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V VLoad dump3) 80 V
RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high
Load current (Short-circuit current, see page 4) IL self-limited A
Operating temperature range Tj -40 ...+150 °C
Storage temperature range Tstg -55 ...+150
Power dissipation (DC) Ptot 167 W
Inductive load switch-off energy dissipation,
single pulse Tj=150 °C: EAS 2.1 J
Electrostatic discharge capability (ESD) VESD 2.0 kV
(Human Body Model)
Input voltage (DC) VIN -0.5 ... +6 V
Current through input pin (DC) IIN ±5.0 mA
Current through status pin (DC) IST ±5.0
see internal circuit diagrams page 6...

Thermal resistance chip - case: RthJC ≤ 0.75 K/W

junction - ambient (free air): RthJA ≤ 75
SMD version, device on pcb4): ≤ tbd

3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.

Semiconductor Group 2 2003-Oct-01

 BTS 442 E2
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 5 A Tj=25 °C: RON -- 15 18 mΩ
Tj=150 °C: 28 35
Nominal load current (pin 3 to 5) IL(ISO) 17 21 -- A
ISO Proposal: VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or IL(GNDhigh) -- -- 1 mA
GND pulled up, VIN= 0, see diagram page 7,
Tj =-40...+150°C
Turn-on time to 90% VOUT: ton 100 -- 350 µs
Turn-off time to 10% VOUT: toff 10 -- 130
RL = 12 Ω, Tj =-40...+150°C
Slew rate on dV /dton 0.2 -- 2 V/µs
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C
Slew rate off -dV/dtoff 0.4 -- 5 V/µs
70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C

Operating Parameters
Operating voltage 5) Tj =-40...+150°C: Vbb(on) 4.5 -- 42 V
Undervoltage shutdown Tj =-40...+150°C: Vbb(under) 2.4 -- 4.5 V
Undervoltage restart Tj =-40...+150°C: Vbb(u rst) -- -- 4.5 V
Undervoltage restart of charge pump Vbb(ucp) -- 6.5 7.5 V
see diagram page 12 Tj =-40...+150°C:
Undervoltage hysteresis ∆Vbb(under) -- 0.2 -- V
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 42 -- 52 V
Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 42 -- -- V
Overvoltage hysteresis Tj =-40...+150°C: ∆Vbb(over) -- 0.2 -- V
Overvoltage protection6) Tj =-40°C: Vbb(AZ) 60 -- -- V
Ibb=40 mA Tj =25...+150°C: 63 67
Standby current (pin 3) Tj=-40...+25°C: Ibb(off) -- 12 25 µA
VIN=0 Tj=150°C: -- 18 60
Leakage output current (included in Ibb(off)) IL(off) -- 6 -- µA
VIN=0
Operating current (Pin 1)7), VIN=5 V IGND -- 1.1 -- mA

5) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V
6) see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load.
7) Add IST, if IST > 0, add IIN, if VIN>5.5 V
Semiconductor Group 3 2003-Oct-01
 BTS 442 E2
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max
Protection Functions8)
Initial peak short circuit current limit (pin 3 to 5)9), IL(SCp)
( max 400 µs if VON > VON(SC) )
Tj =-40°C: -- -- 140 A
Tj =25°C: -- 95 --
Tj =+150°C: 45 -- --
Repetitive short circuit current limit IL(SCr)
Tj = Tjt (see timing diagrams, page 10) 30 70 -- A
Short circuit shutdown delay after input pos. slope
VON > VON(SC), Tj =-40..+150°C: td(SC) 80 -- 400 µs
min value valid only, if input "low" time exceeds 30 µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL), IL= 30 mA VON(CL) -- 58 -- V
Short circuit shutdown detection voltage
(pin 3 to 5) VON(SC) -- 8.3 -- V
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis ∆Tjt -- 10 -- K
Inductive load switch-off energy dissipation10), EAS -- -- 2.1 J
Tj Start = 150 °C, single pulse Vbb = 12 V: ELoad12 1.7
Vbb = 24 V: ELoad24 1.2
Reverse battery (pin 3 to 1) 11) -Vbb -- -- 32 V
Integrated resistor in Vbb line Rbb -- 120 -- Ω

Diagnostic Characteristics
Open load detection current Tj=-40 °C: IL (OL) 2 -- 1900 mA
(on-condition) Tj=25..150°C: 2 -- 1500

8) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
9) Short circuit current limit for max. duration of td(SC) max=400 µs, prior to shutdown
10) While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * iL(t) dt, approx.
2 VON(CL)
EAS= 1/2 * L * IL * ( ), see diagram page 8
VON(CL) - Vbb
11) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional
external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
Semiconductor Group 4 2003-Oct-01
 BTS 442 E2
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Input and Status Feedback12)

Input turn-on threshold voltage VIN(T+) 1.5 -- 2.4 V
Tj =-40..+150°C:
Input turn-off threshold voltage VIN(T-) 1.0 -- -- V
Tj =-40..+150°C:
Input threshold hysteresis ∆ VIN(T) -- 0.5 -- V
Off state input current (pin 2), VIN = 0.4 V IIN(off) 1 -- 30 µA

On state input current (pin 2), VIN = 3.5 V IIN(on) 10 25 50 µA

Status invalid after positive input slope td(ST SC) 80 200 400 µs
(short circuit) Tj=-40 ... +150°C:
Status invalid after positive input slope td(ST) 350 -- 1600 µs
(open load) Tj=-40 ... +150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) 5.4 6.1 -- V
ST low voltage Tj =-40...+150°C, IST = +1.6 mA: VST(low) -- -- 0.4

12) If a ground resistor RGND is used, add the voltage drop across this resistor.

Semiconductor Group 5 2003-Oct-01

 BTS 442 E2

Truth Table
Input- Output Status
level level 442 442
D2 E2
Normal L L H H
operation H H H H
Open load L 13) H H
H H L L
Short circuit L L H H
to GND H L L L
Short circuit L H H H
to Vbb H H H (L14)) H (L14))
Overtem- L L L L
perature H L L L
Under- L L L 15) H
voltage H L L15) H
Overvoltage L L L H
H L L H
L = "Low" Level
H = "High" Level

Terms Input circuit (ESD protection)

Ibb
3 R
I
I IN IN
Vbb
IN
2 IL VON ESD-
PROFET OUT ZDI1 ZDI2
I ST 5 I
I
ST
4
V
IN V ST GND GND
V 1 IGND
bb V OUT
R
GND
ZDI1 6.1 V typ., ESD zener diodes are not to be used
as voltage clamp at DC conditions. Operation in this
mode may result in a drift of the zener voltage
(increase of up to 1 V).

13) Power Transistor off, high impedance

14) Low resistance short Vbb to output may be detected by no-load-detection
15) No current sink capability during undervoltage shutdown

Semiconductor Group 6 2003-Oct-01

 BTS 442 E2
Status output Overvolt. and reverse batt. protection
+5V
+ V bb

R ST(ON) V
R bb
ST Z
R IN
IN

ESD- Logic
V
ZD OUT
GND R ST ST
GND PROFET
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not
R GND
to be used as voltage clamp at DC conditions. Signal GND
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V). Rbb = 120 Ω typ., VZ +Rbb*40 mA = 67 V typ., add
RGND, RIN, RST for extended protection

Short Circuit detection

Fault Condition: VON > 8.3 V typ.; IN high Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
+ V bb

+ V bb

V
ON

VON
OUT ON
Logic Short circuit
unit detection
OUT

Logic Open load

unit detection

Inductive and overvoltage output clamp

+ V bb

V
Z

V
GND disconnect
ON

3
OUT

GND
Vbb
IN
2
VON clamped to 58 V typ. PROFET OUT
5
ST
4
GND
V V V 1 V
bb IN ST GND

Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .

Due to VGND >0, no VST = low signal available.

Semiconductor Group 7 2003-Oct-01

 BTS 442 E2
GND disconnect with GND pull up
3
3 high Vbb
IN
Vbb 2
IN
2 PROFET OUT
5
PROFET OUT
5 ST
4
ST GND
4
GND 1
1
V
bb
V V V
V IN ST GND
bb

Any kind of load. If VGND > VIN - VIN(T+) device stays off
Inductive Load switch-off energy
Due to VGND >0, no VST = low signal available. dissipation
E bb
Vbb disconnect with charged inductive
E AS
load
ELoad
Vbb
3 IN

high Vbb
IN PROFET OUT
2
= ST EL
PROFET OUT
5 GND
ST
4
GND ER
1

V Energy dissipated in PROFET EAS = Ebb + EL - ER.

bb
2
ELoad < EL, EL = 1/2 * L * I L

Semiconductor Group 8 2003-Oct-01

 BTS 442 E2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type BTS 442D2 442E2
Logic version D E
Overtemperature protection
Tj >150 °C, latch function16)17) X
Tj >150 °C, with auto-restart on cooling X
Short-circuit to GND protection
switches off when VON>8.3 V typ.16) X X
(when first turned on after approx. 200 µs)
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across X X
power transistor
Undervoltage shutdown with auto restart X X
Overvoltage shutdown with auto restart X X
Status feedback for
overtemperature X X
short circuit to GND X X
short to Vbb -18) -18)
open load X X
undervoltage X -
overvoltage X -
Status output type
CMOS X
Open drain X
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL) X X
Load current limit
high level (can handle loads with high inrush currents) X X
medium level
low level (better protection of application)

16) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
17) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
18) Low resistance short V to output may be detected by no-load-detection
bb

Semiconductor Group 9 2003-Oct-01

 BTS 442 E2
Timing diagrams

Figure 1a: Vbb turn on: Figure 2b: Switching an inductive load

IN

IN
t d(bb IN)
V
bb
td(ST)
ST

*)

V
OUT
V
OUT

ST open drain
I
L
t IL(OL)
A
t
in case of too early VIN=high the device may not turn on (curve A)
td(bb IN) approx. 150 µs
*) if the time constant of load is too large, open-load-status may
occur
Figure 2a: Switching a lamp,
Figure 3a: Turn on into short circuit,

IN
IN

ST
ST

V
OUT V
OUT

td(SC)

I I
L L

t t

td(SC) approx. 200µs if Vbb - VOUT > 8.3 V typ.

Semiconductor Group 10 2003-Oct-01

 BTS 442 E2
Figure 3b: Turn on into overload, Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN

IN

IL
ST
I L(SCp)
IL(SCr)

V
OUT

T
ST t J

t
Heating up may require several milliseconds,
Vbb - VOUT < 8.3 V typ.

Figure 5a: Open load: detection in ON-state, turn

Figure 3c: Short circuit while on: on/off to open load

IN
IN

t
ST ST d(ST)

V OUT V
OUT

I
IL L
**) open

t t

**) current peak approx. 20 µs

Semiconductor Group 11 2003-Oct-01

 BTS 442 E2
Figure 5b: Open load: detection in ON-state, open Figure 6b: Undervoltage restart of charge pump
load occurs in on-state VON [V]

V on VON(CL)
IN
off

t t
d(ST OL1) d(ST OL2)
ST

V
V bb(over)
OUT
off

V V
bb(u rst) bb(o rst)

I normal open normal V

bb(u cp)
L
V bb(under)
on
t V bb

Vbb [V]
td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ charge pump starts at Vbb(ucp) =6.5 V typ.

Figure 6a: Undervoltage: Figure 7a: Overvoltage:

IN IN

Vbb V ON(CL) Vbb(over) V bb(o rst)

V bb

V Vbb(u cp)
bb(under)
V
bb(u rst)

V
OUT

V OUT

ST open drain ST

t
t

Semiconductor Group 12 2003-Oct-01

 BTS 442 E2
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5 Ordering code TO-220AB/5, Option E3043 Ordering code
BTS 442 E2 Q67060-S6206-A2 BTS 442 E2 E3043 Q67060-S6206-A3

SMD TO-220AB/5, Opt. E3062 Ordering code

BTS442E2 E3062A T&R: Q67060-S6206-A4

Semiconductor Group 13 2003-Oct-01

 BTS 442 E2
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.

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The information herein is given to describe certain
components and shall not be considered as a guarantee of
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Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
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Infineon Technologies Components may only be used in life-
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of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-
support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the
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Semiconductor Group 14 2003-Oct-01