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BSP742RIXUMA1 BSP742RXUMA1

EN DE FR
This Datasheet is presented by Dieses Datenblatt wird vom Cette fiche technique est
the manufacturer Hersteller bereitgestellt prsente par le fabricant
 BSP 742 R

Smart Power High-Side-Switch

Features Product Summary
Overload protection Overvoltage protection Vbb(AZ) 41 V
Current limitation Operating voltage Vbb(on) 5...34 V
Short circuit protection On-state resistance RON 350 m
Thermal shutdown with restart Nominal load current IL(nom) 0.4 A
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection with external resistor
Open drain diagnostic output
Open load detection in OFF - State
CMOS compatible input
Loss of GND and loss of Vbb protection
ESD - Protection
Very low standby current

Application
All types of resistive, inductive and capacitive loads
C compatible power switch for 12 V and 24 V DC applications
Replaces electromechanical relays and discrete circuits

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input
and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.

Page 1 2004-03-16
 BSP 742 R

Block Diagram

+ Vbb

Voltage Overvoltage Current Gate

source protection limit protection
V Logic
OUT
Limit for
Charge pump unclamped
Level shifter ind. loads Temperature
sensor
Rectifier
IN
Load
ESD Logic
ST

GND miniPROFET

Signal GND Load GND

Pin Symbol Function

1 GND Logic ground
2 IN Input, activates the power switch in case of logic high signal
3 OUT Output to the load
4 ST Diagnostic feedback
5 Vbb Positive power supply voltage
6 Vbb Positive power supply voltage
7 Vbb Positive power supply voltage
8 Vbb Positive power supply voltage

Pin configuration

Top view

GND 1 8 Vbb

IN 2 7 Vbb

OUT 3 6 Vbb

ST 4 5 Vbb

Page 2 2004-03-16
 BSP 742 R

Maximum Ratings at Tj = 25C, unless otherwise specified

Parameter Symbol Value Unit
Supply voltage Vbb 40 V
Supply voltage for full short circuit protection Vbb(SC) Vbb
Continuous input voltage VIN -10 ... +16
Load current (Short - circuit current, see page 5) IL self limited A
Current through input pin (DC) I IN 5 mA
Operating temperature Tj -40 ...+150 C
Storage temperature T stg -55 ... +150
Power dissipation 1) Ptot 1.5 W
Inductive load switch-off energy dissipation 1)2) EAS 800 mJ
single pulse, (see page 9)
Tj =150 C, Vbb = 13.5 V, IL = 0.3 A
Load dump protection 2) VLoadDump3)= VA + VS VLoaddump V
RI=2, td=400ms, VIN= low or high, VA=13,5V
RL = 45 60
Electrostatic discharge voltage (Human Body Model) VESD kV
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin 1
all other pins 5

Thermal Characteristics
Thermal resistance @ min. footprint Rth(JA) - 95 - K/W
Thermal resistance @ 6 cm2 cooling area 1) Rth(JA) - 70 83

1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain
connection. PCB is vertical without blown air. (see page 17)
2not subject to production test, specified by design
3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than V bb(AZ) require an external current limit for the GND pin, e.g. with a
150 resistor in GND connection. A resistor for the protection of the input is integrated.

Page 3 2004-03-16
 BSP 742 R

Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = -40...+150C, V bb = 13,5V, unless otherwise specified min. typ. max.
Load Switching Capabilities and Characteristics
On-state resistance RON m
T j = 25 C, I L = 0.3 A, V bb = 9...40 V - 250 350
T j = 150 C - 450 700
Nominal load current IL(nom) 0.4 - - A
Device on PCB 1)2)
T C = 85 C, T j 150 C
Turn-on time to 90% V OUT ton - - 140 s
RL = 47 , V IN = 0 to 10 V
Turn-off time to 10% V OUT toff - - 170
RL = 47 , V IN = 10 to 0 V
Slew rate on 10 to 30% V OUT, dV/dton - - 2 V/s
RL = 47
Slew rate off 70 to 40% V OUT, -dV/dtoff - - 2
RL = 47

Operating Parameters
Operating voltage Vbb(on) 5 - 34 V
Undervoltage shutdown of charge pump Vbb(under) - - 5
Undervoltage restart of charge pump Vbb(u cp) - - 5.5
Standby current Ibb(off) - - 26 A
VIN = 0 V
Leakage output current (included in Ibb(off)) IL(off) - - 12
Operating current IGND - - 1.3 mA
VIN = 5 V

1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain
connection. PCB is vertical without blown air. (see page 17)
2Nominal load current is limited by current limitation (see page 5)

Page 4 2004-03-16
 BSP 742 R

Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = -40...+150C, Vbb = 13,5V, unless otherwise specified min. typ. max.
Protection Functions1)
Initial peak short circuit current limit (pin 5 to 3) I L(SCp) A
Tj = -40 C, Vbb = 20 V - - 2
Tj = 25 C - 1.2 -
Tj = 150 C 0.4 - -
Repetitive short circuit current limit I L(SCr)
Tj = Tjt (see timing diagrams) - 1 -
Output clamp (inductive load switch off) VON(CL) 41 47 - V
at VOUT = Vbb - VON(CL),
Ibb = 4 mA
Overvoltage protection 2) Vbb(AZ) 41 - -
Ibb = 4 mA
Thermal overload trip temperature T jt 150 - - C
Thermal hysteresis Tjt - 10 - K

Reverse Battery
Reverse battery 3) -Vbb - - 32 V
Drain-source diode voltage (VOUT > Vbb) -VON - 600 - mV
Tj = 150 C

1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation .
2 see also VON(CL) in circuit diagram on page 8
3Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has
to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the
voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation!
Input current has to be limited (see max. ratings page 3).

Page 5 2004-03-16
 BSP 742 R

Electrical Characteristics
Parameter Symbol Values Unit
at Tj = -40...+150C, Vbb = 13,5V, unless otherwise specified min. typ. max.
Input and Status feedback
Input turn-on threshold voltage VIN(T+) - - 2.2 V
Input turn-off threshold voltage VIN(T-) 0.8 - -
Input threshold hysteresis V IN(T) - 0.3 -
Off state input current I IN(off) 1 - 30 A
VIN = 0.7 V
On state input current I IN(on) 1 - 30
VIN = 5 V
Status output (open drain), Zener limit voltage VST(high) 5.4 6.1 - V
IST = 1.6 mA
Status output (open drain), ST low voltage VST(low)
Tj = -40...+25 C, IST = 1.6 mA - - 0.4
Tj = 150 C, IST = 1.6 mA - - 0.6
Status invalid after positive input slope 1) t d(ST) - 300 600 s
Input resistance (see page 8) RI 1.5 3.5 5 k

Diagnostic Characteristics
Short circuit detection voltage VOUT(SC) - 2.8 - V
Open load detection voltage VOUT(OL) - 3 -
Openload detection current IL(OL) - 5 - A
included in standby current Ibb(off)

1no delay time after overtemperature switch off and short circuit in on-state

Page 6 2004-03-16
 BSP 742 R

Input Output Status

level level
Normal L L H
operation H H H
Short circuit L L H
to GND H L* L
Short circuit to L H L
Vbb (in off-state) H H H
Overload L L H
H H ** H
Overtemperature L L H
H L L
Open Load in L H L
off-state H H H

*) Out ="L": VOUT < 2V typ.

**) Out ="H": V OUT > 2V typ.

Page 7 2004-03-16
 BSP 742 R

Terms Inductive and overvoltage output clamp

Ibb + V bb

V
I IN Z
Vbb
IN V
ON
IL VON
PROFET OUT
I ST
OUT
ST
GND
V V ST GND
IN
V I
bb GND V OUT
R
GND
VON clamped to 47 V typ.

Input circuit (ESD protection) Overvoltage protection of logic part

R
I
IN

ESD- ZD I
I
I

GND

The use of ESD zener diodes as voltage clamp

at DC conditions is not recommended

Reverse battery protection

VZ1 =6.1V typ., VZ2 =Vbb(AZ) =47V typ.,
5V - V bb
RI=3.5 k typ., RGND=150
R ST Logic Status output
RI
IN
ST OUT +5V
Power
Inverse
Diode

GND RST(ON)
R GND RL
ST
Signal GND Power GND

RGND=150, RI=3.5k typ.,

ESD-
Temperature protection is not active during ZD
inverse current GND

Page 8 2004-03-16
 BSP 742 R

Open-load detection Vbb disconnect with charged inductive

OFF-state diagnostic condition:
V OUT > 3V typ.; IN=low load

high Vbb
IN
OFF
PROFET OUT
I
L(OL)
ST
GND
Logic Open load
unit detection V
OUT

V
Signal GND bb

GND disconnect

Inductive Load switch-off energy

Vbb
dissipation
IN
E bb
PROFET OUT
E AS
ST
E Load
GND
Vbb
V V V IN
bb IN ST V
GND
PROFET OUT
= L
ST

{
EL
GND
ZL
GND disconnect with GND pull up
ER
R
L

Vbb
IN Energy stored in load inductance: EL = * L * IL2

PROFET OUT While demagnetizing load inductance,

the enrgy dissipated in PROFET is
ST EAS = Ebb + EL - ER = VON(CL) * iL(t) dt,
GND
with an approximate solution for RL > 0:

V V V
V IN ST GND
bb IL * L IL * R L
E AS = * ( V b b + | V O U T ( C L )| ) * ln (1 + )
2 * RL | V O U T ( C L )|

Page 9 2004-03-16
 BSP 742 R

Typ. transient thermal impedance Typ. transient thermal impedance

ZthJA=f(tp) @ 6cm 2 heatsink area Z thJA=f(tp) @ minimal footprint
Parameter: D=tp/T Parameter: D=tp/T
2
10 10 2
D=0.5
K/W D=0.5
K/W
D=0.2
D=0.2
D=0.1
10 1 D=0.1 10 1
D=0.05
D=0.05

Z thJA
ZthJA

D=0.02 D=0.02

D=0.01 D=0.01
10 0 10 0
D=0
D=0

10 -1 10 -1

10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 4 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 4
10 10 10 10 10 10 10 10 10 10 s 10 10 10 10 10 10 10 10 10 10 10 s 10
tp tp

Typ. on-state resistance Typ. on-state resistance

RON = f(Tj) ; Vbb = 13,5V ; Vin = high RON = f(V bb); IL = 0.3A ; V in = high

450 600

m m

150C
RON

RON

350 400

300 300

25C

250 200
-40C

200 100

150 0
-40 -20 0 20 40 60 80 100 120 C 160 0 5 10 15 20 25 30 V 40
Tj Vbb

Page 10 2004-03-16
 BSP 742 R

Typ. turn on time Typ. turn off time

ton = f(Tj ); RL = 47 toff = f(Tj); RL = 47

120 120

s s

9...32V

80 9V 80

toff
t on

32V

60 60
13,5V

40 40

20 20

0 0
-40 -20 0 20 40 60 80 100 120 C 160 -40 -20 0 20 40 60 80 100 120 C 160
Tj Tj

Typ. slew rate on Typ. slew rate off

dV/dton = f(T j) ; RL = 47 dV/dtoff = f(Tj); R L = 47

2 2

V/s V/s

1.6 1.6
dton

dtoff
-dV
dV

1.4 1.4

1.2 1.2
32V
1 32V 1

0.8 0.8

0.6 13,5V 0.6

13,5V
0.4 9V 0.4
9V

0.2 0.2

0 0
-40 -20 0 20 40 60 80 100 120 C 160 -40 -20 0 20 40 60 80 100 120 C 160
Tj Tj

Page 11 2004-03-16
 BSP 742 R

Typ. standby current Typ. leakage current

Ibb(off) = f(Tj ) ; Vbb = 32V ; VIN = low I L(off) = f(Tj) ; Vbb = 32V ; VIN = low

14 6

A
A

10
I bb(off)

I L(off)
4

2
4

1
2

0 0
-40 -20 0 20 40 60 80 100 120 C 160 -40 -20 0 20 40 60 80 100 120 C 160
Tj Tj

Typ. initial peak short circuit current limit Typ. initial short circuit shutdown time
IL(SCp) = f(Tj) ; Vbb = 20V toff(SC) = f(Tj,start) ; Vbb = 20V

2 120

A
ms
1.6
toff(SC)
IL(SCp)

1.4
80

1.2

1 60

0.8
40
0.6

0.4
20

0.2

0 0
-40 -20 0 20 40 60 80 100 120 C 160 -40 -20 0 20 40 60 80 100 120 C 160

Tj Tj

Page 12 2004-03-16
 BSP 742 R

Typ. input current Typ. input current

IIN(on/off) = f(Tj); Vbb = 13,5V; VIN = low/high I IN = f(VIN); V bb = 13.5V
VINlow 0,7V; VINhigh = 5V
12 200

A
A
160 150C

140
8 on
IIN

IIN
120 -40...+25C

6 100
off
80
4
60

40
2
20

0 0
-40 -20 0 20 40 60 80 100 120 C 160 0 1 2 3 4 5 6 V 8
Tj VIN
Typ. input threshold voltage Typ. input threshold voltage
VIN(th) = f(Tj ) ; Vbb = 13,5V VIN(th) = f(V bb) ; Tj = 25C

2 2
V on V on

1.6 1.6
V IN(th)

1.4
VIN(th)

off 1.4

1.2 1.2 off

1 1

0.8 0.8

0.6 0.6

0.4 0.4

0.2 0.2

0 0
-40 -20 0 20 40 60 80 100 120 C 160 0 5 10 15 20 25 V 35
Tj Vbb

Page 13 2004-03-16
 BSP 742 R

Maximum allowable load inductance Typ. status delay time

for a single switch off td(ST) = f(V bb); T j = 25C
L = f(IL); Tjstart =150C, Vbb=13.5V, RL=0
4000 500

mH
s
3000

t d(ST)
2500
300
L

2000

200
1500

1000
100

500

0 0
0 100 200 300 400 mA 600 0 5 10 15 20 25 V 35
IL Vbb

Maximum allowable inductive switch-off

energy, single pulse
EAS = f(IL ); Tjstart = 150C, Vbb = 13,5V
1000

mJ
EAS

600

400

200

0
0 100 200 300 400 mA 600
IL

Page 14 2004-03-16
 BSP 742 R

Timing diagrams

Figure 1a: Vbb turn on: Figure 2b: Switching a lamp,

IN IN

Vbb
ST

I V
L OUT

ST IL
t

t d = 20s

Invalid status during td

Figure 2a: Switching a resistive load, Figure 2c: Switching an inductive load
turn-on/off time and slew rate definition

IN
IN

V OUT

ST
90%
t on dV/ dtoff

dV/ dton t
off
VOUT
10%

IL

t
IL
ST

Page 15 2004-03-16
 BSP 742 R

Figure 3a: Turn on into short circuit, Figure 3b: Short circuit in on-state
shut down by overtemperature, restart by cooling shut down by overtemperature, restart by cooling
IN
IN

V OUT V OUT

O u tp u t s h o rt to G N D n o rm a l
O u tp u t s h o r t to G N D
o p e r a t io n

I I
L L (S C p )
I I
L (S C r) L
I
L (S C r)

ST
ST
t

t d (S T ) t

Heating up of the chip may require several milliseconds, depending

on external conditions. Figure 5: Undervoltage restart of charge pump

Figure 4: Overtemperature: Vo n
Reset if Tj < Tjt

IN

ST V b b( u c p )
Vbb( under )
IL

Vbb

TJ

Page 16 2004-03-16
 BSP 742 R

Package and ordering code

all dimensions in mm

Package: Ordering code:

P-DSO-8-6 Q67060-S7303-A2

Printed circuit board (FR4, 1.5mm thick, one

layer 70m, 6cm2 active heatsink area ) as
a reference for max. power dissipation Ptot
Published by nominal load current IL(nom) and thermal
Infineon Technologies AG, resistance R thja
St.-Martin-Strasse 53,
D-81669 Mnchen
Infineon Technologies AG 2001
All Rights Reserved.

Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).

Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Page 17 2004-03-16
 EN - For pricing and availability in your local country please visit one of the below links:

DE - Informationen zu Preisen und Verfgbarkeit in Ihrem Land erhalten Sie ber die unten aufgefhrten Links:

FR - Pour connatre les tarifs et la disponibilit dans votre pays, cliquez sur l'un des liens suivants:

BSP742RIXUMA1 BSP742RXUMA1

EN DE FR
This Datasheet is presented by Dieses Datenblatt wird vom Cette fiche technique est
the manufacturer Hersteller bereitgestellt prsente par le fabricant

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