Solid Sate Electronic Devices (Code: 402401) - AY1516-S2
Solid Sate Electronic Devices (Code: 402401) - AY1516-S2
Solid Sate Electronic Devices (Code: 402401) - AY1516-S2
Isntructor: Hồ Trung Mỹ
Solid sate electronic devices (code: 402401) – AY1516-S2 – Final Exam Review Questions
1. Optical Absorption
1) The longest wavelength that can be absorbed by silicon, which has the bandgap of 1.12 eV, is 1.1 μm. If the
longest wavelength that can be absorbed by another material is 0.87 μm, then bandgap of this material is
(A) 1.416 eV (B) 0.886 eV (C) 0.854 eV (D) 0.706 eV (E) None of the above
Ans: A
2) If E = hc/ is the energy of incident photon and Eg is the energy band gap of solid state material then optical
absorption will take place when
(A) 2E = Eg (B) E = 0 (C) E < Eg (D) E Eg (E) None of the above
Ans: D
2. Luminescence
3) Luminescence is the phenomenon in which
(A) electrons are induced to drop down to energy states
(B) electrons are made free to accumulate at the surface
(C) electrons are excited to high energy levels by various methods of excitation and these drop to low energy
states by producing photons
(D) holes-electrons are neutralized.
Ans: C
4) A photovoltaic metal absorbs a photon of yellow light and immediately emits an ultraviolet photon. This is
called
(A) fluorescence. (B) electroluminescence. (C) phosphorescence. (D) photoluminescence
Ans: D
5) In LED, the process of emitting photons from a direct semiconductive material is called _________________.
(A) photoluminescence. (B) gallium arsenide. (C) electroluminescence. (D) gallium phosphide.
Ans: C
4. Photoconductive cell
9) Photoconductive effect means
(A) The decreased conductivity of an illuminated semiconductor junction
(B) The increased conductivity of an illuminated semiconductor junction
(C) The conversion of photonic energy to electromagnetic energy
(D) The conversion of an electromagnetic energy to photonic energy
Ans: B
10) A photoconductive cell is basically a _________________.
(A) light emitting diode (LED) (B) light dependent resistor (C) photodiode (D) photoelectric relay
Ans: B
SSED_AY1516-S2_Final Exam Review Questions with Answers – page 1/12
11) The resistance of an LDR __________ with increasing incident light intensity (assume that optical absorption
exists).
(A) increases (B) decreases (C) remains the same (D) becomes zero (E) None of the above
Ans: B
12) Which of the choices below is another name for a photoconductive cell?
(A) Varicap (B) Varistor (C) Photoresistive device (D) Photodiode
Ans: C
5. Diffusion of Carriers
13) In a semiconductor, diffusion electron current density is ___________.
(A) qDn(∂n/∂x) (B) qDn(∂p/∂x) (C) –qDp (∂p/∂x) (D) –qDp (∂n/∂x) (E) None of the above
Ans: A
14) In a semiconductor, J, Jp and Jn indicate total diffusion current density hole current density and electron
current density respectively, ∂n/∂x and ∂p/∂x are the electron and hole concentration gradient respectively in x-
direction and Dp and Dn are the hole and electron diffusion constants respectively. Which one of the following
equations is correct?
(A) Jn = –qDn(∂n/∂x) for electrons (B) Jp = –qDp(∂p/∂x) for holes
(C) J = –qDp (∂p/∂x) – qDn (∂n/∂x) (D) None of the above
Ans: B
15) The Einstein relationship between the diffusion constant Dn and mobility μn for electron is
(A) Dn/n = 2kT/q (B) Dn/n = q/kT (C) Dn/n = kT/q (D) Dn/n = kT – Eg
Ans: C
16) The carrier mobility in a semiconductor is found to be 0.4 m2/Vs. Its diffusion constant at 300 K will
be
(A) 0.43 m2/s (B) 0.16 m2/s (C) 0.04 m2/s (D) 0.01 m2/s (E) None of the above
Ans: D
17) Diffusion constant for electron is ________ to hole.
(A) Equal (B) Greater than (C) Lesser than (D) Can’t be determined
Ans: B
Fig.13.1 Fig.13.2
52) A voltage regulator (Fig.13.1) with VS = 8.5 V, R = 20 and Zener diode with VZ = 6V, IZmin = 5mA and IZmax
= 50mA. To keep VL unchanged (=VZ), RL must be in this range of :
(A) 40 < RL < 70 (B) 50 < RL < 80 (C) 60 < RL < 90
(D) 50 < RL < 100 (E) None of the above
Ans: B
53) Given a circuit shown in Fig.13.2, V1 = 3V and V2 = 2V, we apply the constant voltage drop model (VON =
0.7V) for finding IX and VX
(A) IX =2.25mA và VX =3.7V (B) IX =2.45mA và VX =4.3V (C) IX = 2.65mA và VX =5.3V
(D) IX =2.85mA và VX =5.3V (E) None of the above
Ans: C
Figg.20.1 Fig.20.2
2 Fig
g.20.3
97) Given
G the circuit shownn in the fig..20.1 wheree VDD=5V, VTN = 2.5V V, nCoxW/LL = 0.5mA/V V2, and RD =500.
The operating
o pooint of this N-EMOS
N (IIDQ
D , VDS )
(A) (22 mA, 4.5V) (B) (22mA, 3.8V)) (C) (11mA, 4.05V
V) (D) (1mA, 4.50V
V) (E) None
N of the above
a
Ans: D
98) Given
G the cirrcuit shown in the fig.220.2 where VDD=12V, R1=150K, R2=50K, RD=10K,, RS = 0, VTNN =2V,
and nCoxW/L = 2mA/V2 . This N-EM MOS has the Q point (IDQD , VDSQ) off
(A) (11 mA, 2V) (B) (0.55mA, 4V) (C) (0.55mA, 5V) (D) (1mAA, 3V) (E) Nonee of the abovve
SSED__AY1516-S22_Final Exam
m Review Qu
uestions withh Answers – page 8/12
Ans: A
99) Given the circuit shown in the fig.20.2 where VDD=12V, R1=150K, R2=50K, RD=10K, RS=0, VTN =2V,
and nCoxW/L = 2mA/V2. This N-EMOS has the transconductance gm of
(A) 0.001 S (B) 0.002 S (C) 0.003 S (D) 0.004 S (E) None of the above
Ans: B
100) Given the current mirror circuit shown in the fig.20.3 where 5(nCox)M1 = 3(nCox)M2; VTN,M1=VTN,M2;
M1=M2=0. If I2 = 2IR , then (W/L)M2/(W/L)M1 is
(A) 3/10 (B) 10/3 (C) 6/5 (D) 5/6 (E) None of the above
Ans: C
Fig.3
112) Which effect leads to curve A?
(A) Short-channel effect. (B) Narrow-channel effect. (C) Channel-length modulation. (D) None of the above
Ans: A
113) Which effect leads to curve B?
(A) Short-channel effect. (B) Narrow-channel effect. (C) Channel-length modulation. (D) None of the above
Ans: C
114) Which effect leads to curve C?
(A) Short-channel effect. (B) Narrow-channel effect. (C) Channel-length modulation. (D) None of the above
Ans: B
Fig.26.1 Fig.26.2
130) For the circuit shown in Fig.26.1 where VCC = 4.8V, RE = 100, RC = 2.7K, R1 = 80K, R2 = 20K, and
= 100. The Q-point (I CQ,VCEQ ) is (assume VBEQ = 0.7 V)
(A) (2.5mA, 1.7V) (B) (2mA, 1V) (C) (2mA, 2.5V) (D) (1 mA, 2V) (E) None of the above
Ans: D
131) For the circuit shown in Fig.26.2, the Q-point is VCEQ = 12 V and ICQ = 2 mA when = 80. The values of
resistors RC and RB are (assume VBEQ = 0.7 V)
(A) 10 k, 241 k (B) 10 k, 932 k (C) 6 k, 932 k (D) 6 k, 699 k (E) None of the above