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    Silicon NPN Power Transistor 2SD551: Description

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    Ondalis Lobayna
    This document provides information on the ISC 2SD551 silicon NPN power transistor. It has a collector-emitter breakdown voltage of 150V minimum and is intended for use in audio power amplifier applications such as output stages for 80W amplifiers. Key specifications include a continuous collector current of 12A, collector power dissipation of 100W, and DC current gain of 40-140.

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    Silicon NPN Power Transistor 2SD551: Description

    Uploaded by

    Ondalis Lobayna
    77 views2 pages
    This document provides information on the ISC 2SD551 silicon NPN power transistor. It has a collector-emitter breakdown voltage of 150V minimum and is intended for use in audio power amplifier applications such as output stages for 80W amplifiers. Key specifications include a continuous collector current of 12A, collector power dissipation of 100W, and DC current gain of 40-140.

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    2sd551

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    This document provides information on the ISC 2SD551 silicon NPN power transistor. It has a collector-emitter breakdown voltage of 150V minimum and is intended for use in audio power amplifier applications such as output stages for 80W amplifiers. Key specifications include a continuous collector current of 12A, collector power dissipation of 100W, and DC current gain of 40-140.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    77 views2 pages

    Silicon NPN Power Transistor 2SD551: Description

    Uploaded by

    Ondalis Lobayna
    This document provides information on the ISC 2SD551 silicon NPN power transistor. It has a collector-emitter breakdown voltage of 150V minimum and is intended for use in audio power amplifier applications such as output stages for 80W amplifiers. Key specifications include a continuous collector current of 12A, collector power dissipation of 100W, and DC current gain of 40-140.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    isc Silicon NPN Power Transistor 2SD551

    DESCRIPTION
    ·High Current Capability
    ·Collector-Emitter Breakdown Voltage-
    : V(BR)CEO= 150V(Min.)
    ·Complement to Type 2SB681
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    APPLICATIONS
    ·For AF power amplifier applications.
    ·Recommended for use in output stage of 80 watts power
    amplifier .

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage 150 V

    VCEO Collector-Emitter Voltage 150 V

    VEBO Emitter-Base Voltage 5 V

    IC Collector Current-Continuous 12 A

    IE Emitter Current-Continuous 12 A

    Collector Power Dissipation


    PC 100 W
    @TC=25℃

    Tj Junction Temperature 150 ℃

    Tstg Storage Temperature -65~150 ℃

    isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


    isc Silicon NPN Power Transistor 2SD551

    ELECTRICAL CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 150 V

    V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V

    VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.5 V

    VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 5V 1.5 V

    ICBO Collector Cutoff Current VCB= 100V; IE= 0 0.1 mA

    IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA

    hFE DC Current Gain IC= 1A ; VCE= 5V 40 140

    fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V 15 MHz

    COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 250 pF

     hFE Classifications

    R O

    40-80 70-140

    NOTICE：
    ISC reserves the rights to make changes of the content herein the datasheet at any time without
    notification. The information contained herein is presented only as a guide for the applications of
    our products.
    ISC products are intended for usage in general electronic equipment. The products are not designed
    for use in equipment which require specialized quality and/or reliability, or in equipment which
    could have applications in hazardous environments, aerospace industry, or medical field. Please
    contact us if you intend our products to be used in these special applications.
    ISC makes no warranty or guarantee regarding the suitability of its products for any particular
    purpose, nor does ISC assume any liability arising from the application or use of any products, and
    specifically disclaims any and all liability, including without limitation special, consequential or
    incidental damages.

    isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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