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    Silicon PNP Power Transistors

    Uploaded by

    Sebastian Correa
    This document provides specifications for the 2SA1726 silicon PNP power transistor. It has a TO-220C package and is intended for audio and general purpose applications. Key specifications include an absolute maximum collector-emitter voltage of -80V, collector current of -6A, and junction temperature of 150°C. Electrical characteristics are also provided such as a typical DC current gain of 50, transition frequency of 20MHz, and turn-on/fall times of 0.18μs and 0.21μs respectively. Finally, package outline dimensions are shown.

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    © All Rights Reserved
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    Silicon PNP Power Transistors

    Uploaded by

    Sebastian Correa
    62 views4 pages
    This document provides specifications for the 2SA1726 silicon PNP power transistor. It has a TO-220C package and is intended for audio and general purpose applications. Key specifications include an absolute maximum collector-emitter voltage of -80V, collector current of -6A, and junction temperature of 150°C. Electrical characteristics are also provided such as a typical DC current gain of 50, transition frequency of 20MHz, and turn-on/fall times of 0.18μs and 0.21μs respectively. Finally, package outline dimensions are shown.

    Original Description:

    Transistor 2sa1726

    Original Title

    2sa1726

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    This document provides specifications for the 2SA1726 silicon PNP power transistor. It has a TO-220C package and is intended for audio and general purpose applications. Key specifications include an absolute maximum collector-emitter voltage of -80V, collector current of -6A, and junction temperature of 150°C. Electrical characteristics are also provided such as a typical DC current gain of 50, transition frequency of 20MHz, and turn-on/fall times of 0.18μs and 0.21μs respectively. Finally, package outline dimensions are shown.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    62 views4 pages

    Silicon PNP Power Transistors

    Uploaded by

    Sebastian Correa
    This document provides specifications for the 2SA1726 silicon PNP power transistor. It has a TO-220C package and is intended for audio and general purpose applications. Key specifications include an absolute maximum collector-emitter voltage of -80V, collector current of -6A, and junction temperature of 150°C. Electrical characteristics are also provided such as a typical DC current gain of 50, transition frequency of 20MHz, and turn-on/fall times of 0.18μs and 0.21μs respectively. Finally, package outline dimensions are shown.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    JMnic Product Specification

    Silicon PNP Power Transistors 2SA1726

    DESCRIPTION ・
    ・With TO-220C package
    ・Complement to type 2SC4512

    APPLICATIONS
    ・Audio and General Purpose

    PINNING

    PIN DESCRIPTION

    1 Emitter

    Collector;connected to
    2
    mounting base

    3 Base

    Absolute maximum ratings(Ta=25℃)


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter -80 V

    VCEO Collector-emitter voltage Open base -80 V

    VEBO Emitter-base voltage Open collector -6 V

    IC Collector current -6 A

    IB Base current -3 A

    PC Collector dissipation TC=25℃ 50 W

    Tj Junction temperature 150 ℃

    Tstg Storage temperature -55~150 ℃


    JMnic Product Specification

    Silicon PNP Power Transistors 2SA1726

    CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE=∞ -80 V

    VCE(sat) Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.5 V

    ICBO Collector cut-off current VCB=-80V ;IE=0 -10 μA

    IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA

    hFE DC current gain IC=-2A ; VCE=-4V 50

    COB Collertor output capacitance f=1MHz; VCB=-10V 150 pF

    fT Transition frequency IE=0.5A ; VCE=-12V 20 MHz

    Switching times

    ton Turn-on time 0.18 μs


    VCC=-30V; IC=-3A
    tstg Storage time IB1=-IB2=-0.3A 1.10 μs
    RL=10Ω
    tf Fall time 0.21 μs

    ‹ hFE Classifications
    O P Y

    50-100 70-140 90-180

    2
    JMnic Product Specification

    Silicon PNP Power Transistors 2SA1726

    PACKAGE OUTLINE

    Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

    3
    JMnic Product Specification

    Silicon PNP Power Transistors 2SA1726

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