Icl 7673

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ICL7673

Data Sheet

July 22, 2005

FN3183.4

Automatic Battery Back-Up Switch

Features

The Intersil ICL7673 is a monolithic CMOS battery backup


circuit that offers unique performance advantages over
conventional means of switching to a backup supply. The
ICL7673 is intended as a low-cost solution for the switching
of systems between two power supplies; main and battery
backup. The main application is keep-alive-battery power
switching for use in volatile CMOS RAM memory systems
and real time clocks. In many applications this circuit will
represent a low insertion voltage loss between the supplies
and load. This circuit features low current consumption, wide
operating voltage range, and exceptionally low leakage
between inputs. Logic outputs are provided that can be used
to indicate which supply is connected and can also be used
to increase the power switching capability of the circuit by
driving external PNP transistors.

Automatically Connects Output to the Greater of Either


Input Supply Voltage

Ordering Information

Pb-Free Plus Anneal Available (RoHS Compliant)

PART
NUMBER

TEMP. RANGE
(C)

PACKAGE

PKG.
DWG. #

ICL7673CPA

0 to 70

8 Ld PDIP

E8.3

ICL7673CPAZ
(See Note)

0 to 70

8 Ld PDIP*
(Pb-free)

E8.3

ICL7673CBA

0 to 70

8 Ld SOIC (N)

M8.15

ICL7673CBA-T

8 Ld SOIC (N) Tape and Reel

M8.15

ICL7673CBAZA
(See Note)

0 to 70

8 Ld SOIC (N)
(Pb-free)

M8.15

ICL7673CBAZA-T
(See Note)

0 to 70

8 Ld SOIC (N)
(Pb-free)

M8.15

*Pb-free PDIPs can be used for through hole wave solder


processing only. They are not intended for use in Reflow solder
processing applications.

If Main Power to External Equipment is Lost, Circuit Will


Automatically Connect Battery Backup
Reconnects Main Power When Restored
Logic Indicator Signaling Status of Main Power
Low Impedance Connection Switches
Low Internal Power Consumption
Wide Supply Range: . . . . . . . . . . . . . . . . . . . 2.5V to 15V
Low Leakage Between Inputs
External Transistors May Be Added if Very Large
Currents Need to Be Switched

Applications
On Board Battery Backup for Real-Time Clocks,
Timers, or Volatile RAMs
Over/Under Voltage Detector
Peak Voltage Detector
Other Uses:
- Portable Instruments, Portable Telephones, Line
Operated Equipment

Functional Block Diagram


VP

VS

NOTE: Intersil Pb-free plus anneal products employ special Pb-free


material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.

Pinouts

VO

P1

P2
SBAR

PBAR

GND

ICL7673 (SOIC, PDIP)


TOP VIEW

VP > VS , P1 SWITCH ON AND PBAR SWITCH ON


VS > VP , P2 SWITCH ON AND SBAR SWITCH ON

VO

VP

VS

NC

SBAR

PBAR

GDN

NC

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 1999-2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.

ICL7673
Absolute Maximum Ratings

Thermal Information

Input Supply (VP or VS) Voltage . . . . . . . . . . . . GND - 0.3V to +18V


Output Voltages PBAR and SBAR . . . . . . . . . . . GND - 0.3V to +18V
Peak Current
Input VP (at VP = 5V) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . 38mA
Input VS (at VS = 3V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
PBAR or SBAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA

Thermal Resistance (Typical, Note 2)

Operating Conditions

*Pb-free PDIPs can be used for through hole wave solder processing
only. They are not intended for use in Reflow solder processing
applications.

JA (C/W)

JC (C/W)

PDIP Package* . . . . . . . . . . . . . . . . . .
150
N/A
Plastic SOIC Package . . . . . . . . . . . . .
180
N/A
Maximum Storage Temperature. . . . . . . . . . . . . . . . . -65C to 150C
Maximum Lead Temperature (Soldering, 10sec). . . . . . . . . . . 300C
(SOIC - Lead Tips Only)

Temperature Range:
ICL7673C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0C to 70C

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:
1. Derate above 25C by 0.38mA/C.
2. JA is measured with the component mounted on an evaluation PC board in free air.

Electrical Specifications

TA = 25C Unless Otherwise Specified

PARAMETER

SYMBOL

Input Voltage

Quiescent Supply Current


Switch Resistance P1 (Note 1)

Temperature Coefficient of Switch


Resistance P1
Switch Resistance P2 (Note 1)

TEST CONDITIONS

MIN

TYP

MAX

UNITS

VP

VS = 0V, ILOAD = 0mA

2.5

15

VS

VP = 0V, ILOAD = 0mA

2.5

15

I+

VP = 0V, VS = 3V, ILOAD = 0mA

1.5

rDS(ON)P1

VP = 5V, VS = 3V, ILOAD = 15mA

15

At TA = +85C

16

VP = 9V, VS = 3V, ILOAD = 15mA

VP = 12V, VS = 3V, ILOAD = 15mA

TC(P1)

VP = 5V, VS = 3v, ILOAD = 15mA

0.5

%/C

rDS(ON)P2

VP = 0V, VS = 3V, ILOAD = 1mA

40

100

At TA = +85C

60

VP = 0V, VS = 5V, ILOAD = 1mA

26

VP = 0V, VS = 9V, ILOAD = 1mA

16

Temperature Coefficient of Switch


Resistance P2

TC(P2)

VP = 0V, VS = 3V, ILOAD = 1mA

0.7

%/C

Leakage Current (VP to VS)

IL(PS)

VP = 5V, VS = 3V, ILOAD = 10mA

0.01

20

nA

At TA = +85C

35

nA

VP = 0V, VS = 3V, ILOAD = 10mA

0.01

50

nA

at TA = +85C

120

nA

VP = 5V, VS = 3V, ISINK = 3.2mA, ILOAD = 0mA

85

400

mV

At TA = 85C

120

mV

VP = 9V, VS = 3V, ISINK = 3.2mA, ILOAD = 0mA

50

mV

VP = 12V, VS = 3V, ISINK = 3.2mA


ILOAD = 0mA

40

mV

VP = 0V, VS = 3V, ISINK = 3.2mA, ILOAD = 0mA

150

400

mV

at TA = +85C

210

mV

VP = 0V, VS = 5V, ISINK = 3.2mA ILOAD = 0mA

85

mV

VP = 0V, VS = 9V, ISINK = 3.2mA ILOAD = 0mA

50

mV

Leakage Current (VP to VS)

IL(SP)

Open Drain Output Saturation Voltages

Open Drain Output Saturation Voltages

VOPBAR

VOSBAR

FN3183.4
July 22, 2005

ICL7673
Electrical Specifications

TA = 25C Unless Otherwise Specified (Continued)

PARAMETER

SYMBOL

Output Leakage Currents of PBAR and


SBAR

ILPBAR

ILSBAR

Switchover Uncertainty for Complete


Switching of Inputs and Open Drain
Outputs

V P - VS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

VP = 0V, VS = 15V, ILOAD = 0mA

50

500

nA

at TA = +85C

900

nA

VP = 15V, VS = 0V, ILOAD = 0mA

50

500

nA

at TA = +85C

900

nA

VS = 3V, ISINK = 3.2mA, ILOAD = 15mA

10

50

mV

NOTE:
3. The Minimum input to output voltage can be determined by multiplying the load current by the switch resistance.

Typical Performance Curves


100

100
ILOAD = 1mA
ON-RESISTANCE P2 ()

ON-RESISTANCE P1 ()

ILOAD = 15mA

10

10

1
0

10

12

14

16

INPUT VOLTAGE VP (V)

FIGURE 1. ON-RESISTANCE SWITCH P1 AS A FUNCTION OF


INPUT VOLTAGE VP

0.4

-40C
25C
85C

0.2

8
10
12
14
SUPPLY VOLTAGE (V)

16

FIGURE 3. SUPPLY CURRENT AS A FUNCTION OF SUPPLY


VOLTAGE

OUTPUT SATURATION VOLTAGE (V)

SUPPLY CURRENT (A)

0.6

10

FIGURE 2. ON-RESISTANCE SWITCH P2 AS A FUNCTION OF


INPUT VOLTAGE VS

0.8

4
6
INPUT VOLTAGE VS

VO = 5V

VO = 9V

VO = 3V

VO = 12V
3

VO = 15V

40

80
120
OUTPUT CURRENT (mA)

140

180

FIGURE 4. PBAR OR SBAR SATURATION VOLTAGE AS A


FUNCTION OF OUTPUT CURRENT

FN3183.4
July 22, 2005

ICL7673
low load currents the output voltage is nearly equal to the
greater of the two inputs. The maximum voltage drop across
switch P1 or P2 is 0.5V, since above this voltage the bodydrain parasitic diode will become forward biased. Complete
switching of the inputs and open-drain outputs typically
occurs in 50s.

1mA
ILOAD = 10mA
VS = 0V

Input Voltage

IS LEAKAGE CURRENT

100mA

The input operating voltage range for VP or VS is 2.5V to


15V. The input supply voltage (VP or VS) slew rate should be
limited to 2V per microsecond to avoid potential harm to the
circuit. In line-operated systems, the rate-of-rise (or fall) of
the supply is a function of power supply design. For battery
applications it may be necessary to use a capacitor between
the input and ground pins to limit the rate-of-rise of the
supply voltage. A low-impedance capacitor such as a
0.047F disc ceramic can be used to reduce the rate-of-rise.

85C
10nA

1nA

1000pA

Status Indicator Outputs


10pA
25C
1pA
0

5
6
INPUT VP (V)

10

12

FIGURE 5. IS LEAKAGE CURRENT VP TO VS AS A


FUNCTION OF INPUT VOLTAGE

The N-Channel open drain output transistors can be used to


indicate which supply is connected, or can be used to drive
external PNP transistors to increase the power switching
capability of the circuit. When using external PNP power
transistors, the output current is limited by the beta and
thermal characteristics of the power transistors. The
application section details the use of external PNP
transistors.

Applications

Detailed Description
As shown in the Functional Diagram, the ICL7673 includes a
comparator which senses the input voltages VP and VS. The
output of the comparator drives the first inverter and the
open-drain N-Channel transistor PBAR . The first inverter
drives a large P-Channel switch, P1, a second inverter, and
another open-drain N-Channel transistor, SBAR . The second
inverter drives another large P-Channel switch P2. The
ICL7673, connected to a main and a backup power supply,
will connect the supply of greater potential to its output. The
circuit provides break-before-make switch action as it
switches from main to backup power in the event of a main
power supply failure. For proper operation, inputs VP and VS
must not be allowed to float, and, the difference in the two
supplies must be greater than 50mV. The leakage current
through the reverse biased parasitic diode of switch P2 is
very low.

A typical discrete battery backup circuit is illustrated in Figure


6. This approach requires several components, substantial
printed circuit board space, and high labor cost. It also
consumes a fairly high quiescent current. The ICL7673
battery backup circuit, illustrated in Figure 7, will often replace
such discrete designs and offer much better performance,
higher reliability, and lower system manufacturing cost. A
trickle charge system could be implemented with an additional
resistor and diode as shown in Figure 8. A complete low
power AC to regulated DC system can be implemented using
the ICL7673 and ICL7663S micropower voltage regulator as
shown in Figure 9.
+5V
PRIMARY
DC POWER

VO
+5V OR
+3V
STATUS
INDICATOR

Output Voltage
The output operating voltage range is 2.5V to 15V. The
insertion loss between either input and the output is a
function of load current, input voltage, and temperature. This
is due to the P-Channels being operated in their triode
region, and, the ON-resistance of the switches is a function
of output voltage VO . The ON-resistance of the P-Channels
have positive temperature coefficients, and therefore as
temperature increases the insertion loss also increases. At
4

NiCAD
BATTERY
STACK

GND

FIGURE 6. DISCRETE BATTERY BACKUP CIRCUIT

FN3183.4
July 22, 2005

ICL7673
A typical application, as illustrated in Figure 12, would be a
microprocessor system requiring a 5V supply. In the event of
primary supply failure, the system is powered down, and a
3V battery is employed to maintain clock or volatile memory
data. The main and backup supplies are connected to VP
and VS, with the circuit output VO supplying power to the
clock or volatile memory. The ICL7673 will sense the main
supply, when energized, to be of greater potential than VS
and connect, via its internal MOS switches, VP to output VO.
The backup input, VS will be disconnected internally. In the
event of main supply failure, the circuit will sense that the
backup supply is now the greater potential, disconnect VP
from VO, and connect VS.

Applications for the ICL7673 include volatile semiconductor


memory storage systems, real-time clocks, timers, alarm
systems, and over/under the voltage detectors. Other
systems requiring DC power when the master AC line supply
fails can also use the ICL7673.
8

+5V
PRIMARY
SUPPLY

VP

2
LITHIUM
BATTERY

VO

VS

GND

Pbar

VO
+5V OR +3V

RI
STATUS
INDICATOR

GND

Figure 11 illustrates the use of external PNP power


transistors to increase the power switching capability of the
circuit. In this application the output current is limited by the
beta and thermal characteristics of the power transistors.

FIGURE 7. ICL7673 BATTERY BACKUP CIRCUIT

+5V
PRIMARY
SUPPLY

VP

VO

If hysteresis is desired for a particular low power application,


positive feedback can be applied between the input VP and
open drain output SBAR through a resistor as illustrated in
Figure 12. For high power applications hysteresis can be
applied as shown in Figure 13.

VO
+5V OR +3V

RC
2
RECHARGEABLE
BATTERY

VS

GND
4

The ICL7673 can also be used as a clipping circuit as


illustrated in Figure 14. With high impedance loads the
circuit output will be nearly equal to the greater of the two
input signals.

GND

FIGURE 8. APPLICATION REQUIRING RECHARGEABLE


BATTERY BACKUP

VP
8

FUSE
BRIDGE
RECTIFIER
C1

120/240
VAC

ICL7663
REGULATOR
4

R2

R3

6
D1

R1

VS

STEPDOWN
TRANSFORMER

VO

ICL7673
BATTERY
BACK-UP
4

BATTERY
STACK

GND

FIGURE 9. POWER SUPPLY FOR LOW POWER PORTABLE AC TO DC SYSTEMS

+5V
MAIN
POWER

POWER
FAIL
DETECTOR

MICROPROCESSOR

VP
VS
VO

INTERRUPT SIGNAL

ICL7673
BACKUP CIRCUIT

VOLATILE
RAM

FIGURE 10. TYPICAL MICROPROCESSOR MEMORY APPLICATION

FN3183.4
July 22, 2005

ICL7673

R2

PNP

PNP
VP

MAIN
SUPPLY

1
VO

8
VS

ICL7673

GND

R1

R4

NC

P-

EXTERNAL
EQUIPMENT

R3
(NOTE 4)

S-

3V
BACKUP
SUPPLY

NOTE 4. > 1MW


FIGURE 11. HIGH CURRENT BATTERY BACKUP SYSTEM

RF
RS

MAIN
SUPPLY

VP

VO

8
ICL7673
VS
BATTERY
BACKUP

S2

3
GND

GND

GND

FIGURE 12. LOW CURRENT BATTERY BACKUP SYSTEM WITH HYSTERESIS


R2

PNP

PNP
RF
R1
+V
MAIN
SUPPLY

RS

VP

NC

PICL7673 6

VS
2
+

MAIN
SUPPLY
GND

R4

R3

S-

EXTERNAL
EQUIPMENT

BACKUP
SUPPLY

FIGURE 13. HIGH CURRENT BACKUP SYSTEM WITH HYSTERESIS

FN3183.4
July 22, 2005

ICL7673

VP
VP

VO
ICL7673

VS

VS
GND

VO

FIGURE 14. CLIPPLING CIRCUITS

All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporations quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com
7

FN3183.4
July 22, 2005

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