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    Introduction To Silvaco ATHENA Tool and Basic Concepts in Process Modeling 1

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    This document provides an overview of process simulation for semiconductor device fabrication using the Silvaco ATHENA tool. It describes the basic steps in planar pn-junction fabrication including epitaxial growth, oxidation, photolithography, diffusion, and metalization. Analytical and statistical models for ion implantation, diffusion, and other processes are discussed. Examples are given of using the Gaussian and Pearson analytical models for ion implantation profiles.

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    Introduction To Silvaco ATHENA Tool and Basic Concepts in Process Modeling 1

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    engahmed25
    195 views18 pages
    This document provides an overview of process simulation for semiconductor device fabrication using the Silvaco ATHENA tool. It describes the basic steps in planar pn-junction fabrication including epitaxial growth, oxidation, photolithography, diffusion, and metalization. Analytical and statistical models for ion implantation, diffusion, and other processes are discussed. Examples are given of using the Gaussian and Pearson analytical models for ion implantation profiles.

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    This document provides an overview of process simulation for semiconductor device fabrication using the Silvaco ATHENA tool. It describes the basic steps in planar pn-junction fabrication including epitaxial growth, oxidation, photolithography, diffusion, and metalization. Analytical and statistical models for ion implantation, diffusion, and other processes are discussed. Examples are given of using the Gaussian and Pearson analytical models for ion implantation profiles.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    195 views18 pages

    Introduction To Silvaco ATHENA Tool and Basic Concepts in Process Modeling 1

    Uploaded by

    engahmed25
    This document provides an overview of process simulation for semiconductor device fabrication using the Silvaco ATHENA tool. It describes the basic steps in planar pn-junction fabrication including epitaxial growth, oxidation, photolithography, diffusion, and metalization. Analytical and statistical models for ion implantation, diffusion, and other processes are discussed. Examples are given of using the Gaussian and Pearson analytical models for ion implantation profiles.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 18
    At a glance
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    The key takeaways are that the document discusses the process simulation of semiconductor devices using tools like ATHENA and ATLAS. It covers various process steps like oxidation, diffusion, ion implantation and explains the advantages of process simulation.

    The main steps in the fabrication process of an integrated circuit are epitaxial growth, oxidation, passivation of the silicon surface, photolithography, diffusion and metalization.

    The main advantages of physically-based process simulation are that it is predictive, provides insight and captures theoretical knowledge in a way that makes the knowledge available to non-experts. It is also quicker and cheaper than experiments and provides information that is difficult to measure.

    EEE 533 Semiconductor Device and Process Simulation

    EEE 533: Semiconductor Device and


    Process Simulation
    Spring 2001
    Introduction to Silvaco ATHENA Tool and
    Basic Concepts in Process Modeling
    Part - 1
    Instructor: Dragica Vasileska
    Department of Electrical Engineering
    Arizona State University
    EEE 533 Semiconductor Device and Process Simulation
    1. Introduction to Process Simulation
    The fabrication process of an integrated circuit consists of
    the following main steps:
    u Epitaxial growth
    v oxidation, passivation of the silicon surface
    w Photolithography
    diffusion
    metalization
    A schematic description of a planar process for the fabricati-
    on of a pn-junction, consists of the following steps:
    1. Epitaxial growth:
    Epitaxial
    n-layer
    p-substrate
    High-temperature process (~1000 C)
    The amount of dopant atoms
    determines the conductivity of the layer
    EEE 533 Semiconductor Device and Process Simulation
    2. Oxidation and Photolithography
    3. Diffusion and Metalization steps
    Epitaxial
    n-layer
    p-substrate
    SiO
    2 Diffusion window
    Thermal oxidation leads to
    formation of oxide layer for
    surface passivation
    Photolithography allows
    proper formation of the
    diffusion window
    oxidation
    Epitaxial
    n-layer
    p-substrate
    photolithography
    n-layer
    p-substrate
    diffusion
    p
    n-layer
    p-substrate
    metalization
    p
    The diffusion process gives
    rise to the pn-junction
    (takes place at ~1000 C)
    Electrical contacts are
    formed via the metalization
    process
    EEE 533 Semiconductor Device and Process Simulation
    The sequence of events that lead to successful fabrication
    of the device structure are the following:
    Fabricate device
    structure
    Perform electrical
    characterization
    Design
    condition met?
    yes
    optimization
    Simulation replacing
    experimental steps:
    no
    ATHENA
    Process simulation tool
    ATLAS
    Device simulation tool
    EEE 533 Semiconductor Device and Process Simulation
    Physically-based process simulation predicts the structure
    that results from specified process sequence
    Accomplished by solving systems of equations that describe
    the physics and chemistry of semiconductor processes
    Physically-based process simulation provides three major
    advantages:
    u it is predictive
    v it provides insight
    w captures theoretical knowledge in a way that makes
    the knowledge available to non-experts
    Factors that make physically-based process simulation
    important:
    u quicker and cheaper than experiments
    v provides information that is difficult to measure
    EEE 533 Semiconductor Device and Process Simulation
    The processing steps that one needs to follow, for example,
    for fabricating a 0.1 m MOSFET device, include (in random
    order):
    Ion implantation process
    Diffusion process
    Oxidation process
    Etching models
    Deposition models
    In the following set of slides, each of this process is
    described in more details with the appropriate statements
    and parameter specification.
    EEE 533 Semiconductor Device and Process Simulation
    Some historical dates:
    - Bipolar transistor: 1947 - DTL - technology 1962
    - Monocrystal germanium: 1950 - TTL - technology 1962
    - First good BJT: 1951 - ECL - technology 1962
    - Monocrystal silicon: 1951 - MOS integrated circuit 1962
    - Oxide mask, - CMOS 1963
    Commercial silicon BJT: 1954 - Linear integrated circuit 1964
    - Transistor with diffused - MSI circuits 1966
    base: 1955 - MOS memories 1968
    - Integrated circuit: 1958 - LSI circuits 1969
    - Planar transistor: 1959 - MOS processor 1970
    - Planar integrated circuit: 1959 - Microprocessor 1971
    - Epitaxial transistor: 1960 - I
    2
    L 1972
    - MOS FET: 1960 - VLSI circuits 1975
    - Schottky diode: 1960 - Computers using
    - Commercial integrated VLSI technology 1977
    circuit (RTL): 1961 - ...
    EEE 533 Semiconductor Device and Process Simulation
    2. Description of the Ion Implantation Process
    Ion implantation is the most-frequently applied doping
    technique in the fabrication of Si devices, particularly
    integrated circuits.
    Two models are frequently used to describe the ion
    implantation process:
    u Analytical models:
    do not contribute to physical understanding
    can be adequate for many engineering appli-
    cations because of its simplicity
    v Statistical (Monte Carlo technique):
    first principles calculation (time consuming)
    can describe parasitic effects such as:
    - lattice disorder and defects
    - back scattering and target sputtering
    - channeling (important in crystalline mater.)
    EEE 533 Semiconductor Device and Process Simulation
    (A) Analytical Models
    For all of the analytical models, the real ion distribution in
    1D is given the following functional form:
    D total implanted dose per unit area
    f(x) probability density function, frequency function -
    described with the following four characteristic quantities:
    u Projected range R
    p
    : v Standard deviation R
    P
    :
    w Skewness : x Excess or kurtosis :
    ) ( ) ( x Df x C

    +

    dx x xf R
    p
    ) (
    ( )
    2 / 1
    2
    ) (
    ]
    ]
    ]


    +

    dx x f R x R
    p p
    ( )
    ( )
    3
    3
    ) (
    p
    p
    R
    dx x f R x



    +

    ( )
    ( )
    4
    4
    ) (
    p
    p
    R
    dx x f R x



    +

    EEE 533 Semiconductor Device and Process Simulation
    Analytical distributions most frequently used for describing
    doping profiles are:
    u Simple Gaussian or normal distribution
    v Joined half-Gaussian distribution
    w Pearson type IV distribution
    Simple Gaussian or normal distribution 1D model
    Makes use of the projected range R
    p
    and the standard
    deviation R
    p
    :
    Has =0 and =3. The approximation of the true profile
    is only correct up to first order, since it gives symmetric
    profiles around the peak of the distribution.
    Range parameters R
    p
    and R
    p
    for all the impurity-
    material combinations are stored in the ATHENAIMP file.
    ( )
    ( ) ]
    ]
    ]
    ]

    2
    2
    2
    exp
    2
    ) (
    p
    p
    p
    R
    R x
    R
    D
    x C
    EEE 533 Semiconductor Device and Process Simulation
    The model is activated via the GAUSS parameter on
    the IMPLANT statement; R
    p
    (RANGE) and R
    p
    (STD.DEV)
    Other parameter that has to be specified is the dose D
    (via the parameter DOSE on the IMPLANT statement)
    Pearson distribution 1D model
    This is a standard model in SSUPREM4, and is used for
    generating asymmetrical doping profiles.
    The family of Pearson distribution functions is obtained
    as a solution of a differential equation:
    ( )
    ( ) ( )
    ( )
    ]
    ]
    ]
    ]

    +
    ]
    ]
    ]
    ]

    +

    + +
    + +

    2
    1 0 2
    2 2
    2
    1 0 2
    2 1
    2 / 1
    0 1
    2
    2
    2
    2 1 0
    4
    2
    arctan
    4
    / 2
    exp
    ) (
    ) ( ) (
    2
    b b b
    b R x b
    b b b
    b b a
    b R x b R x b K x f
    x b x b b
    x f a x
    dx
    x df
    p
    b
    p p
    EEE 533 Semiconductor Device and Process Simulation
    The type of the Pearson distribution depends upon the
    sign of the term: D = 4b
    0
    b
    2
    - b
    1
    2
    . Only the Pearson IV (D>0)
    distribution has the proper shape and a single maximum.
    The constants a, b
    0
    , b
    1
    and b
    2
    are related to the
    moments of f(x) in the following manner:
    The vertical dopant concentration is then proportional to
    the ion dose:
    This simple model can fail in the case when channeling
    effects are important (dual Pearson model has to be used)
    ( ) ( )
    8 12 10 ,
    6 3 2
    ,
    3 4
    ,
    3
    2
    2
    1
    2 2
    0




    +

    A
    A
    b
    a b
    A
    R
    b
    A
    R
    a
    p p


    ) ( ) ( x Df x C
    EEE 533 Semiconductor Device and Process Simulation
    The model is activated via the PEARSON parameter on
    the IMPLANT statement.
    Other parameters that can be specified in conjunction
    with the model choice include:
    Lattice structure type: CRYSTAL or AMORPHOUS
    Implant material type: ARSENIC, BORON, etc.
    Implant energy in keV via ENERGY parameter
    For dual-Pearson model, another parameter is
    important and describes the screen oxide (S.OXIDE)
    through which ion implantation process takes place
    EEE 533 Semiconductor Device and Process Simulation
    Two-dimensional implant profiles
    2D analytical implant models are quite rudimentary and
    usually based on a simple convolution of a quasi-one
    dimensional profile C(x, t
    mask
    (y)) with a Gaussian distribu-
    tion in the y-direction:

    y
    - independent of depth (problem)
    In the case of an infinitely high mask extending to the
    point y = a, the convolution can be performed analytically, to
    give:
    ( )
    '
    2
    '
    exp )) ' ( , (
    2
    1
    ) , (
    2
    2
    dy
    y y
    y t x C y x C
    y
    mask
    y

    ]
    ]
    ]
    ]

    +

    MASK
    IONS
    x (depth)
    y (lateral)

    ,
    `

    .
    |

    '

    <

    x
    t
    y
    mask
    dt e x erfc
    y a
    erfc x C y x C
    a y x C
    a y
    y t x C
    2
    2
    ) ( ;
    2
    ) ( ) , (
    ) (
    0
    )) ( , (
    2
    1

    EEE 533 Semiconductor Device and Process Simulation
    Additional Parameters that need to be specified for 2D
    ion-implantation profiles are:
    Tilt angle: TILT
    Angle of rotation of the implant: ROTATION
    Implant performed atall rotation angles: FULLROTATIO
    Print moments used for all ion/material combinations:
    PRINT.MOM
    Specification of a factor by which all lateral standard de-
    viations for the first and second Pearson distribution are
    multiplied: LAT.RATIO1 and LAT.RATIO2
    EEE 533 Semiconductor Device and Process Simulation
    (B) Monte Carlo Models
    Analytical models can give very good results when applied to
    ion-implantation in simple planar structures. For non-planar
    structures, more sophisticated models are required.
    SSUPREM4 contains two models for Monte Carlo simulation:
    Amorphous material model
    crystaline material model
    The Monte Carlo model can also deal with the problem of ion
    implantation damage:
    Damage types: Frankel pairs (Interstitial and Vacancy
    profiles), <311> clusters, Dislocation loops
    Two models exist for ion implantation damage modeling:
    Kinchin-Pease model (for amorphous material)
    Crystalline materials model
    EEE 533 Semiconductor Device and Process Simulation
    (C) Some examples for analytical models
    Implant of phosphorus with a dose of 10
    14
    cm
    -2
    and Gaussian model used
    for the distribution function. The range and standard deviation are speci-
    fied in microns instead of using table values.
    IMPLANT PHOS DOSE=1E14 RANGE=0.1 STD.DEV=0.02 GAUSS
    100 keV implant of phosphorus done with a dose of 10
    14
    cm
    -2
    and a tilt
    angle of 15 to the surface normal. Pearson model is used for the distribu-
    tion function.
    IMPLANT PHOSPH DOSE=1E14 ENERGY=100 TILT=15
    60 keV implant of boron is done with a dose of 410
    12
    cm
    -2
    , tilt angle of 0
    and rotation of 0. Pearson model for the distribution function is used that
    takes into account channeling effect via the specification of the CRYSTAL
    parameter.
    IMPLANT BORON DOSE=4.0E12 ENERGY=60 PEARSON \
    TILT=0 ROTATION=0 CRYSTAL
    EEE 533 Semiconductor Device and Process Simulation
    (D) Characteristic values for the ion-implantation process
    Dose: 10
    12
    to 10
    16
    atoms/cm
    2
    Current: 1 A/cm
    2
    to 1 A/cm
    2
    Voltage-energy: 10 to 300 kV
    After the fact annealing: 500 to 800 C
    Advantages of the ion implantation process:
    Relatively low-temperature process that can be used at
    arbitrary time instants during the fabrication sequence.

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