MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR8CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR8CM OUTLINE DRAWING Dimensions

in mm

10.5 MAX 4.5

1.3

3.2±0.2
4

16 MAX

7.0
∗
TYPE
NAME φ3.6±0.2
VOLTAGE
CLASS
1.0

3.8 MAX
12.5 MIN
0.8

2.5 2.5 0.5 2.6

4.5
123 ∗ Measurement point of
case temperature
24
1 T1 TERMINAL
• IT (RMS) ........................................................................ 8A 2 T2 TERMINAL
3 3 GATE TERMINAL
• VDRM ..............................................................400V/600V 1 4 T2 TERMINAL
• IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) ✽5 TO-220

APPLICATION
Contactless AC switches, light drimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet · electric fan, solenoid drivers, small motor control,
copying machine, electric tool, other general purpose control applications

MAXIMUM RATINGS
Voltage class
Symbol Parameter Unit
8 12
VDRM Repetitive peak off-state voltage ✽1 400 600 V
VDSM Non-repetitive peak off-state voltage ✽1 500 720 V

Symbol Parameter Conditions Ratings Unit

IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc =105°C 8 A
ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive 80 A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
I2t I2t for fusing 26 A2s
current

PGM Peak gate power dissipation 5 W

PG (AV) Average gate power dissipation 0.5 W
VGM Peak gate voltage 10 V
IGM Peak gate current 2 A
Tj Junction temperature –40 ~ +125 °C
Tstg Storage temperature –40 ~ +125 °C
— Weight Typical value 2.0 g
✽1. Gate open.

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR8CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 2.0 mA
VTM On-state voltage Tc=25°C, ITM=12A, Instantaneous measurement — — 1.5 V
VFGT ! ! — — 1.5 V
VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω — — 1.5 V
VRGT # # — — 1.5 V
IFGT ! ! — — 30 ✽5 mA
IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω — — 30 ✽5 mA
IRGT # # — — 30 ✽5 mA
VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V
R th (j-c) Thermal resistance Junction to case ✽4 — — 2.0 °C/ W

Critical-rate of rise of off-state

(dv/dt) c ✽3 — — V/µs
commutating voltage

✽2. Measurement using the gate trigger characteristics measurement circuit.

✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4. The contact thermal resistance R th (c-f) in case of greasing is 1.0°C/W.
✽5. High sensitivity (I GT≤20mA) is also available. (IGT item 1)

Voltage VDRM (dv/dt) c Commutating voltage and current waveforms

class (V) Test conditions (inductive load)
Symbol Min. Unit

R —
SUPPLY
1. Junction temperature
8 400 VOLTAGE TIME
Tj =125°C
L 10
2. Rate of decay of on-state commutat- MAIN CURRENT (di/dt)c
V/µs ing current TIME
(di/dt)c=–4A/ms
R — MAIN
3. Peak off-state voltage VOLTAGE TIME
12 600
VD =400V (dv/dt)c
L 10 VD

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT

102 100
7
SURGE ON-STATE CURRENT (A)

5 90
ON-STATE CURRENT (A)

3 80
2
Tj = 125°C
70
101
7 60
5
3 50
2 Tj = 25°C
40
100
7 30
5
20
3
2 10
10–1 0
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 100 2 3 4 5 7 101 2 3 4 5 7 102

ON-STATE VOLTAGE (V) CONDUCTION TIME

(CYCLES AT 60Hz)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR8CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

GATE CHARACTERISTICS JUNCTION TEMPERATURE

100 (%)
103
3 TYPICAL EXAMPLE
2 VGM = 10V PG(AV) = 0.5W 7
PGM = 5W 5
101 4
GATE VOLTAGE (V)

GATE TRIGGER CURRENT (Tj = 25°C)

7 3

GATE TRIGGER CURRENT (Tj = t°C)

5 IGM = 2A IRGT III
2
3 VGT = 1.5V
2
102 IRGT I IFGT I
100
7 7
5 5
3 4
2 3
IFGT I IRGT I, IRGT III 2
10–1 VGD = 0.2V
7
5
101
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 –60 –40 –20 0 20 40 60 80 100 120 140

GATE CURRENT (mA) JUNCTION TEMPERATURE (°C)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS
GATE TRIGGER VOLTAGE VS. (JUNCTION TO CASE)
JUNCTION TEMPERATURE
102 2 3 5 7 103
100 (%)

TRANSIENT THERMAL IMPEDANCE (°C/W)

103 2.4
7 TYPICAL EXAMPLE 2.2
5 2.0
4
1.8
GATE TRIGGER VOLTAGE (Tj = 25°C)

3
GATE TRIGGER VOLTAGE (Tj = t°C)

2 1.6
1.4
102 1.2
7 1.0
5 0.8
4
3 0.6
2 0.4
0.2
101 0
–60 –40 –20 0 20 40 60 80 100 120 140 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

JUNCTION TEMPERATURE (°C) CONDUCTION TIME

(CYCLES AT 60Hz)

MAXIMUM ON-STATE POWER ALLOWABLE CASE TEMPERATURE

DISSIPATION VS. RMS ON-STATE CURRENT
16 160
ON-STATE POWER DISSIPATION (W)

CURVES APPLY REGARDLESS

14 140 OF CONDUCTION ANGLE
CASE TEMPERATURE (°C)

12 360° 120
CONDUCTION
10 RESISTIVE, 100
INDUCTIVE
8 LOADS 80

6 60
360°
4 40 CONDUCTION
RESISTIVE,
2 20 INDUCTIVE
LOADS
0 0
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16

RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR8CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

ALLOWABLE AMBIENT TEMPERATURE ALLOWABLE AMBIENT TEMPERATURE

VS. RMS ON-STATE CURRENT VS. RMS ON-STATE CURRENT
160 160
ALL FINS ARE BLACK PAINTED NATURAL CONVECTION
AMBIENT TEMPERATURE (°C)

AMBIENT TEMPERATURE (°C)

140 ALUMINUM AND GREASED 140 NO FINS
CURVES APPLY REGARDLESS CURVES APPLY REGARDLESS
120 OF CONDUCTION ANGLE 120 OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
100 120 120 t2.3 100

80 100 100 t2.3 80

60 60 60 t2.3 60
RESISTIVE,
40 INDUCTIVE 40
LOADS
20 NATURAL 20
CONVECTION
0 0
0 2 4 6 8 10 12 14 16 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A)

REPETITIVE PEAK OFF-STATE

100 (%)

CURRENT VS. JUNCTION HOLDING CURRENT VS.

TEMPERATURE JUNCTION TEMPERATURE
105 103
100 (%)

7 TYPICAL EXAMPLE TYPICAL EXAMPLE

REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)

5 7
REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)

5
3 4
2
3
HOLDING CURRENT (Tj = 25°C)

104
HOLDING CURRENT (Tj = t°C)

2
7
5
3 102
2 7
103 5
7 4
5 3
3 2
2
102 101
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140

JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C)

LACHING CURRENT VS. BREAKOVER VOLTAGE VS.

JUNCTION TEMPERATURE JUNCTION TEMPERATURE
103 160
100 (%)

7 TYPICAL EXAMPLE
5 140
DISTRIBUTION T2+, G–

,,,,,,,,,,,
LACHING CURRENT (mA)

3
2 TYPICAL

,,,,,,,,,,,
120
EXAMPLE
BREAKOVER VOLTAGE (Tj = 25°C)

,,,,,,,,,,,
102
BREAKOVER VOLTAGE (Tj = t°C)

7 100

,,,,,,,,,,,
5

,,,,,,,,,,,
3 80

,,,,,,,,,,,
2
60

,,,,,,,,,,,
101
7

,,,,,,,,,,,
5

,,,,,,,,,,,
3
2 T2 , G  TYPICAL
+ +

40

20
T2– , G–  EXAMPLE
100 0
–40 0 40 80 120 160 –60 –40 –20 0 20 40 60 80 100120 140

JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR8CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

BREAKOVER VOLTAGE VS.

RATE OF RISE OF
OFF-STATE VOLTAGE COMMUTATION CHARACTERISTICS
100 (%)

CRITICAL RATE OF RISE OF OFF-STATE

160
TYPICAL EXAMPLE 3 TYPICAL VOLTAGE WAVEFORM

COMMUTATING VOLTAGE (V/µs)

Tj = 125°C 2 EXAMPLE t
140
(dv/dt)C VD
102 Tj = 125°C
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (dv/dt = xV/µs )

120 7 IT = 4A CURRENT WAVEFORM

5 τ = 500µs (di/dt)C
100 IT
3 VD = 200V
2 f = 3Hz τ t
80
101
7 I QUADRANT
60 5
III QUADRANT
3 MINIMUM
40 2 CHARAC-
20 I QUADRANT 100 TERISTICS III QUADRANT
7 VALUE
0 5
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) RATE OF DECAY OF ON-STATE

COMMUTATING CURRENT (A/ms)

GATE TRIGGER CURRENT VS. GATE TRIGGER CHARACTERISTICS TEST CIRCUITS

GATE CURRENT PULSE WIDTH
103 6Ω 6Ω
100 (%)

TYPICAL EXAMPLE
7
5 IFGT I
4 A A
3 IRGT I 6V 6V
GATE TRIGGER CURRENT (DC)

RG RG
GATE TRIGGER CURRENT (tw)

2 IRGT III V V

102 TEST PROCEDURE 1 TEST PROCEDURE 2

7
5 6Ω
4
3
2
A
6V
101 0 V RG
10 2 3 4 5 7 101 2 3 4 5 7 102

GATE CURRENT PULSE WIDTH (µs) TEST PROCEDURE 3

Feb.1999