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    Formula Sheet - ECE 342 Midterm 2 - Summer 2 2003 Diode: Q KT V

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    kpv294
    This document contains formulas and small-signal models for various electronic components including: 1) Diodes, MOSFETs, and BJTs along with their I-V characteristics and small-signal models. 2) CMOS inverter propagation delay, switching threshold, and models for power consumption. 3) Noise margins and small-signal models for differential amplifiers.

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    Formula Sheet - ECE 342 Midterm 2 - Summer 2 2003 Diode: Q KT V

    Uploaded by

    kpv294
    132 views3 pages
    This document contains formulas and small-signal models for various electronic components including: 1) Diodes, MOSFETs, and BJTs along with their I-V characteristics and small-signal models. 2) CMOS inverter propagation delay, switching threshold, and models for power consumption. 3) Noise margins and small-signal models for differential amplifiers.

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    Formula 1

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    This document contains formulas and small-signal models for various electronic components including: 1) Diodes, MOSFETs, and BJTs along with their I-V characteristics and small-signal models. 2) CMOS inverter propagation delay, switching threshold, and models for power consumption. 3) Noise margins and small-signal models for differential amplifiers.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOC, PDF, TXT or read online from Scribd
    Download as doc, pdf, or txt
    132 views3 pages

    Formula Sheet - ECE 342 Midterm 2 - Summer 2 2003 Diode: Q KT V

    Uploaded by

    kpv294
    This document contains formulas and small-signal models for various electronic components including: 1) Diodes, MOSFETs, and BJTs along with their I-V characteristics and small-signal models. 2) CMOS inverter propagation delay, switching threshold, and models for power consumption. 3) Noise margins and small-signal models for differential amplifiers.

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    of 3

    Formula Sheet – ECE 342 Midterm 2 – Summer 2 2003

    Diode   kT
    i D  I s e v D nVT  1 , where VT  q is 25 mV at room temperature

    + vD - rd

    iD id
    nVT
    small-signal model: rd 
    ID

    MOSFET, large-signal characteristics

    NMOS iD = PMOS
    vGS  Vt 0 vGS  Vt
    vGS  Vt ,  v2  vGS  Vt ,
    k   vGS  Vt   v DS  DS 
    v DS  vGS  Vt  2  v DS  vGS  Vt
    vGS  Vt , k vGS  Vt ,
      vGS  Vt  2  1 |   v DS |
    v DS  vGS  Vt 2 v DS  vGS  Vt

    G G

    D S S D
    iD iD
    Vt  Vt 0    
    2 f  v SB  2 f , nmos
    Vt  Vt 0   2 f  v SB  
    2 f , pmos ( > 0, in accordance with standard practice)
    W
    k  k '
    L
    Digital Logic
    Noise margins: NML = VIL – VOL, NMH = VOH - VIH

    Power: P  PStatic  PDynamic ,


    PStatic  VDD   p OL  I DD  OL   p OH   I DD  OH   ,
    PDynamic  C L  f  V DD
    2
    where OL (OH) refers to the output low (high) state, p() refers to
    probability, and f is the frequency at which the output switches.

    1.7  C L 1.7  C L
    CMOS inverter propagation delay: t PHL  ; t PLH 
    k n  VDD k p  VDD
    kn
    VDD  Vtp   Vtn
    kp
    CMOS inverter switching threshold (VIN = VOUT = VM): VM 
    kn
    1
    kp
    MOSFET small-signal model
    1 V g m
    g m  k  VGS  Vt   2 k I D , ro   A , g mb 
      ID ID 2  | 2 f |  | V BS |

    g d
    + gmvgs ro gmbvbs
    vgs
    - s
    -
    vbs
    +
    b

    BJT, forward-active characteristics (for npn (pnp): vBE (vEB)  0.7 V, vCB (vBC)  0)
    v BE v BE
    VT  v  i
      I s e VT , i B  C ,  
     i
    iC  I s e  1  CE , iE  C
     VA    1 

    iC iE
    iB iB

    iE iC
    npn pnp
    BJT, small-signal model
    ib ic
    b c

    +
    r gmvbe ro
    vbe
    -

    ie
    e
    IC  V V 
    gm  , r  , ro  A , re  T 
    VT gm IC I E gm

    Hybrid- Model

    c
    ic
    ie
    ib
    b

    ie re

    e
    T-model
    (ro may be connected between collector and emitter terminals, if significant.)

    Differential amplifier
    v v v
    v I 1  vCM  D  VCM  vcm  d (assumed VD = 0), v I 2  VCM  vcm  d
    2 2 2

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