EC6201D-Digital Integrated Circuit Design Dhanaraj K. J. Assistant Professor ECED, NIT Calicut

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EC6201D- Digital Integrated Circuit Design

Dhanaraj K. J.
Assistant Professor
ECED, NIT Calicut

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 In reality the drain current will not abruptly drop to zero when VGS is
reduced to VTH. There is still some more drain conduction below
threshold and this is known as subthreshold conduction.

 This current is due to the weak inversion in the channel between flat
band and threshold. Ie band-bending between zero and 2F. Ie the
transition from “on” to “off” condition is not abrupt but gradual.
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 For VGS<VT, the current actually decays in an exponential fashion
similar to the operation of a BJT. In the absence of a conducting
channel, the n+(source)-p(bulk)-n+(drain) actually from a parasitic BJT.
The current can be approximated as
 qVGS 
    DS  
 qV 

ID  ISe  mkT  1  e  kT  
 
 
2  qV 
     T 
I S   nCox  m  1  e  mkT 
W kT
L  q 

C  Cit Cd depletion capacitance


m  1 d Cit interface state capacitance due to
Cox interface states at the Si-SiO2 interface

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 The slope of log10(ID) Vs VGS is called
Subthreshold swing.
 The reciprocal of this slope is called
Subthreshold slope (S).

2.3mkT
S
q

Typical value is 70mV/decade at room temperature

 A small value of S means a small change in the input bias can


modulate the output current considerably

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VGS  V T
|V GS|
Ron
S D

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Consider a capacitor discharging from VDD to
VDD/2 through an NMOST

One approach is to average the resistance


considering the average of the resistance values
at the end points of transition

Ron  Ron (t1 )  Ron (t 2 )


1

1
Ron (VDD )  Ron (VDD / 2)
2 2
1 VDD VDD / 2 
  '  ' 
2  I Dsat 1  VDD  I Dsat 1  VDD / 2
3 VDD  5 
Ron  '
4 I Dsat 1  6 VDD 
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Another approach is to average the resistance in the
entire region of operation
If VDD/2>VDSAT, then the complete region
of operation is the saturation region
W  
2
 VGS  VT VDSAT 
VDSAT
I D  I Dsat
'
1  VDS  '
I Dsat   nCox  
L  2 
VDD / 2
1 V
Ron 
 VDD / 2 
VDD
I Dsat 1  V 
'
dV

1 VDD / 2
2  1 x 2 x3

 2VDD I Dsat
' 
1 VDD
1  du
 u
ln1  x   x    ....
2 3

3 VDD  7 
Ron  '
1   V
 9 DD 
4 I Dsat
7
 Same as NOT gate

Truth Table

V+ and V-  supply rails


VH and VL  high and low logic
levels at the output
Voltage Transfer Characteristic (VTC)
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Vout

V f VOH = f(VOL)
OH VOL = f(VOH)
Vout=Vin
VM = f(VM)

VM Switching Threshold

V OL

V OL V Vin
OH

Nominal Voltage Levels

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Noise
margin high
“ 1” V
OH
NMH
V V
out IH
V
OH
Undefined
Region
Noise
margin low
V
IL
NML
“ 0” V
OL

V
OL
V
IL
V
IH
V
in
NM H  VO H  VI H
NM L  VI L  VO L
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VIL Maximum input voltage which can be interpreted as logic 0
VIH Minimum input voltage which can be interpreted as logic 1

Vout These two critical voltage points are defined as the points on the VTC where
dVout
 1
V Slope = -1 dVin
OH
Vout  f (Vin )
If the output voltage deviated from its nominal value
due to a small perturbation Vnoise,
Slope = -1
V
OL V 'out  f (Vin  Vnoise )
V V V
IL IH df (Vin )
in
 f (Vin )  Vnoise  H .O.T .
Hence the valid regions are defined dVin
such that in those regions noise dVout
amplification wont happen.
 f (Vin )  Vnoise
dVin
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V DD
V DD Vin-logic Vout-logic

RL 0 VDD
RL VDD VDD-IDRL

V out
V out

V in
V in

Vin-logic Vout-logic

0 1
1 0 12
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