Physics Notes Class 12 Chapter 14 Semiconductor Electronics, Materials, Devices and Sample Circuits
Physics Notes Class 12 Chapter 14 Semiconductor Electronics, Materials, Devices and Sample Circuits
Physics Notes Class 12 Chapter 14 Semiconductor Electronics, Materials, Devices and Sample Circuits
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Thermionic Emission
Thermionic emission occurs when a metal is heated to a high temperature, the free electrons in
the metal gain kinetic energy sufficient to escape through the surface of the metal.
Thermionic Diode
The thermionic diode is a two electrode (cathode and plate) device based on thermionic
emission.
A diode allows unidirectional flow of electrons, i.e., only when the plate is positive with
respect to cathode. Hence, it is also called a valve.
The triode value consists of three electrodes, e.g., cathode. plate and grid enclosed in an
evacuated glass bulb.
Grid influences the space charge and controls the flow of plate current.
[When the grid is given a negative potential with respect to cathode. It repels the electrons
escaping from the cathode and Increases the effect of space charge, at sufficientLy negative
grid potential is known as cut-off grid bias.
If the grid is given a positive potential with respect to cathode, it attracts the electrons and
decreases the effect of space charge. The increasing the plate current. In this case a current flow
into the circuit, thus grid modifies the function of valve.]
Grid is always kept at small negative potential with respect to cathode.
Triode can be used as an amplifier, oscillator modulator and demodulator.
An oscillator is an electronic device which generates AC voltage froID DC power. It is
basically a positive feedback amplifier with infinite voltage gain.
Types of Semiconductor
(i) Intrinsic Semiconductor A semiconductor in its pure state is called intrinsic
semiconductor.
(ii) Extrinsic Semiconductor A semiconductor doped with suitable impurity to increase its
impurity, is called extrinsic semiconductor.
On the basis of doped impurity extrinsic semiconductors are of two types
(i) n-type Semiconductor Extrinsic semiconductor doped with pentavalent impurity like As,
Sb, Bi, etc in which negatively charged electrons works as charge carrier, is called n-type
semiconductor.
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Every pentavalent impurity atom donate one electron in the crystal, therefore it is called a
doner atom
(ii) p -type Semiconductor Extrinsic semiconductor doped with trivalent impurity like Al, B,
etc, in which positively charged holes works as charge carriers, is called p-type semiconductor.
Every trivalent impurity atom have a tendency to accept one electron, therefore it is called an
acceptor atom.
In a doped semiconductor ne nh = n2i where ne and nh are the number density of electrons and
holes and ni is number density of intrinsic carriers, i.e., electrons or holes.
In n-type semiconductor, ne > > nh
In p -type semiconductor, nh > > ne
Electrical conductivity of extrinsic semiconductor is given by
= 1 / = e (ne e + nh h)
where is resistivity, e and h are mobility of electrons and holes respectively.
Note Energy gap for Ge is 0.72 eV and for Si it is 1.1 eV.
p-n Junction
An arrangement consisting a p -type semiconductor brought into a close contact with n-type
semiconductor, is called a p -n junction.
The current in a p-n junction is given by
kB = Io (eeV/k BT 1 )
where Io is reverse saturation current, V is potential difference across the diode, and k B is the
Boltzmann constant.
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The maximum voltage that a junction diode can bear without break is called zener voltage and
the junction diodes possessing this voltage is known as zener diode.
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Resistance of diode R = V / I
Rectifier
A device which convert alternating current or voltage into direct current or voltage IS known as
rectifier. The process of converting AC into DC IS caned rectification.
Half-Wave Rectifier
A half-wave rectifier converts the half cycle of applied AC signal into DC signal. Ordinary
transformer may be used here.
Full-Wave Rectifier
A full-wave rectifier converts the whole cycle of applied AC signal into DC signal. Centre
top,transformer is used here.
[Half-wave rectifier converts only one-half of AC Into DC while full wave rectifier rectifies
both halves of AC input.]
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Transistor
A transistor is an arrangement obtained by growing a thin layer of one type of semiconductor
between two thick layers of other similar type semiconductor.
Types of Transistors
The left side semiconductor is called emitter, the right side semiconductor is called
collector and the thin middle layer is called base.
Emitter is highly doped and base is feebly doped.
A transistor can be utilized as an amplifier and oscillator but not a rectifier
Maximum amplification is obtained in common-emitter configuration.
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Transistor as an Amplifier
An amplifier is a device which is used for increasing the amplitude of variation of alternating
voltage 01 current or power.
The amplifier thus produces an enlarged version of the input signal.
The general concept of amplification is represented in figure. There are two input terminals for
the signal to be amplified and two output terminals for connecting the load; and a means of
supplying power to the amplifier.
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Relation between the current gain of common base and common emitter amplifier.
= / 1 = I c / Ie
The input and output signals are out of phase by or 180
There is amplification in current, voltage and power of the given signal.
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(ii) AND Gate It is a two input and one output logic gate
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(iii) NOT Gate It is a one input and one output logic gate.
Combination of Gates
(i) NAND Gate When output of AND gate is applied as input to a NOT gate, then it is called a
NAND gate.
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The Boolean expression obey commutative law associative law as well as distributive
law.
1. A + B = B+ A
2. A B = B A
3. A + (B + C) = (A + B) + C
Demorgans theorems
1. A + B = A * B
2. A * B = A + B
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