"A study on the improved programming characteristics of flash memory with ..."

Lu Liu et al. (2009)

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DOI: 10.1016/J.MICROREL.2009.05.010

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type: Journal Article

metadata version: 2023-07-06

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Lu Liu, Jing-Ping Xu, L. L. Chen, Pui To Lai:
A study on the improved programming characteristics of flash memory with Si₃N₄/SiO₂ stacked tunneling dielectric. Microelectron. Reliab. 49(8): 912-915 (2009)

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