Unit 4 Bipolar Junction Transistor

UNIT 4
Bipolar Junction Transistor

REMEMBER THIS
Current flow in the opposite direction of the electrons flow;
same direction as holes
e e e
h h h
Transistor Structures
 The bipolar junction transistor (BJT) has three
separately doped regions and contains two pn junctions.
 Bipolar transistor is a 3-terminal device.
 Emitter (E)
 Base (B)
 Collector (C)
 The basic transistor principle is that the

voltage between two terminals controls the
current through the third terminal.
 Current in the transistor is due to the flow of both electrons
and holes, hence the name bipolar.
Transistor Structures
 There are two types of bipolar junction transistor: npn and
pnp.
 The npn bipolar transistor contains a thin p-region
between two n-regions.
 The pnp bipolar transistor

contains a thin n-region
sandwiched between two p-
regions.
3 Regions of Operation
 Active
Operating range of the amplifier.
Base-Emitter Junction forward biased.
Collector-Base Junction reverse biased
 Cutoff
The amplifier is basically off. There is
voltage but little current.
Both junctions reverse biased
 Saturation
The amplifier is full on. There is little
voltage but lots of current.
Both junctions forward biased
OPERATIONS - npn
ACTIVE MODE
+
VBE
 The base-emitter (B-E)
-
junction is forward biased and
the base-collector (C-B)
junction is reverse-biased,.
 Since the B-E junction is
forward biased, electrons
from the emitter are injected
iB
across the B-E junction into
the base  IE
 Once in the base region, the Some electrons, in passing
electrons are quickly through the base region,
accelerated through the recombine with majority carrier
base due to the reverse- holes in the base. This produces
biased C-B region  IC the current IB
TO ILLUSTRATE
B E
C -
VBE
+
•Imagine the marbles as electrons

•A flat base region with gaps where the
marbles may fall/trapped – recombine
•A sloping collector region represents
high electric field in the C-B region
•Hence, when enough energy is given
to the marbles, they will be accelerated
towards to base region with enough
momentum to pass the base and
straight ‘fly’ to the collector
MATHEMATICAL EXPRESSIONS
IC
IB
+
IE
VBE
-
IE = IS [ e VBE / VT -1 ] = IS e VBE / VT Based on KCL: IE = IC + IB

No. of electrons crossing the base region and then directly into the
collector region is a constant factor  of the no. of electrons exiting the
base region
IC =  IB
No. of electrons reaching the collector region is directly proportional to
the no. of electrons injected or crossing the base region.
Ideally  = 1, but in reality it is between 0.9
IC =  IE and 0.998.
Based on KCL: IE = IC + IB IC =  IB IC =  IE
IE =  IB + IB = IB(  + 1) IE = IB(  + 1)
Now
With IC =  IB  IB = IC / 
Hence,
IE = [ IC / ] (  + 1)
IC = IE [  /  + 1 ]
Comparing with IC =  IE =[ /+1]

C
OPERATIONS - pnp
IB
FORWARD ACTIVE MODE IC
B
-
 The emitter – base (E- B)
VEB IE
junction is forward biased and
the base-collector (B- C) +
junction is reverse-biased,. E
IE = IS [ e VEB / VT -1 ] = IS e VEB / VT
**Notice that it is VEB
Based on KCL: IE = IC + IB
pnp Transistor- Active mode
SUMMARY: Circuit Symbols and
Conventions
npn bipolar transistor simple
block diagram and circuit symbol.
Arrow is on the emitter terminal
that indicates the direction of
emitter current (out of emitter
terminal for the npn device)
pnp bipolar transistor simple

block diagram and circuit symbol.
Arrow is on the emitter terminal
that indicates the direction of
emitter current (into of emitter
terminal for the pnp device)
NPN PNP
IE = IS [ e VBE / VT ] IE = IS [ e VEB / VT]
IC =  IB
IC =  IE
IE = IB(  + 1)
=[ /+1]  = [ / 1 -  ]
EXAMPLE 4.1
Calculate the collector and emitter currents, given the base current and current gain.
Assume a common-base current gain and a base current of .
Also assume that the transistor is biased forward in the forward active mode.
Solution: The common-emitter current gain is
The collector current is
And the emitter current is

Examples
• EXAMPLE 1
• Given IB = 6.0A and
IC=510 A
• EXAMPLE 2
Determine ,  and IE
• NPN Transistor
• Reverse saturation
 EXAMPLE 3
current Is = 10-13A with
 PNP Transistor current gain,  = 90.
  = 60, IC= 0.85mA Based on VBE = 0.685V,
 Determine , IE and IB determine IC , IB and IE
BJT: Current-Voltage
Characteristic
IC versus VCE
Common-Emitter Configuration - npn
 The Emitter is common to both input
(base-emitter) and output (collector-
emitter).
 Since Emitter is grounded, VC = VCE
 With decreasing VC (VCE), the junction

B-C will become forward biased too.
Node B
 The current IC quickly drops to zero
because electrons are no longer
collected by the collector
0V
Characteristics of Common-Emitter
- npn
NOTE: VEC for PNP

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UNIT 4

Bipolar Junction Transistor

 The basic transistor principle is that the

 The pnp bipolar transistor

•Imagine the marbles as electrons

IE = IS [ e VBE / VT -1 ] = IS e VBE / VT Based on KCL: IE = IC + IB

Comparing with IC =  IE =[ /+1]

**Notice that it is VEB

pnp bipolar transistor simple

IE = IS [ e VBE / VT ] IE = IS [ e VEB / VT]

Solution: The common-emitter current gain is

The collector current is

And the emitter current is

 Since Emitter is grounded, VC = VCE

 With decreasing VC (VCE), the junction

NOTE: VEC for PNP

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